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    mosfet vgs 5v

    Abstract: ST341
    Text: ST3413A P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST3413A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited


    Original     		PDF ST3413A ST3413A OT-23-3L -20V/-3 -20V/-2 mosfet vgs 5v ST341

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    Abstract: No abstract text available
    Text: ST3413A P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST3413A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited


    Original     		PDF ST3413A ST3413A OT-23 -20V/-3 -20V/-2 -20V/-1