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Rochester Electronics LLC FST34170MTD IC MUX/DEMUX 16 X 1:2 56TSSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FST34170MTD	Tube			237	1 - 10 - 100 - 1000 $1.27 10000 $1.27	Buy Now
Rochester Electronics LLC FST34170MTDX IC MUX/DEMUX 16 X 1:2 56TSSOP
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DigiKey	FST34170MTDX	Bulk			346	1 - 10 - 100 - 1000 $0.87 10000 $0.87	Buy Now
PacTech PGS-FL68-11ST341G1 CABLE 8COND 28AWG GRAY 1000'
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DigiKey	PGS-FL68-11ST341G1	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
PacTech PGS-FL68-11ST341K1 CABLE 8COND 28AWG BLACK 1000'
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PGS-FL68-11ST341K1	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Hang Crystal International X49ST3-4.194304-F18JJDTK CRYSTAL 4.194304MHZ 18PF SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	X49ST3-4.194304-F18JJDTK	Reel			1,000	1 - 10 - 100 - 1000 $0.153 10000 $0.153	Buy Now
	X49ST3-4.194304-F18JJDTK				10	1 - 10 $0.228 100 $0.185 1000 $0.153 10000 $0.149	Buy Now

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ST341 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
ST3413		Stanson Technology	P Channel Enhancement Mode MOSFET		Original	PDF

ST341 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
mosfet vgs 5v Abstract: ST341 Text: ST3413A P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST3413A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited	Original	ST3413A ST3413A OT-23-3L -20V/-3 -20V/-2 mosfet vgs 5v ST341	PDF
mosfet 40a 12v Abstract: No abstract text available Text: N Channel Enhancement Mode MOSFET ST3414 4.0A DESCRIPTION The ST3414 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.	Original	ST3414 ST3414 OT-23-3L 55m-ohm 70m-ohm mosfet 40a 12v	PDF
P channel MOSFET 1A Abstract: MOSFET NOTEBOOK sot-23 P-Channel MOSFET ST3413 marking 34A Text: P Channel Enhancement Mode MOSFET ST3413 -3.4A DESCRIPTION The ST3413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.	Original	ST3413 ST3413 OT-23-3L -20V/-3 95m-ohm -20V/-2 120m-ohm -20V/-1 145m-ohm P channel MOSFET 1A MOSFET NOTEBOOK sot-23 P-Channel MOSFET marking 34A	PDF
Untitled Abstract: No abstract text available Text: ST3414A N Channel Enhancement Mode MOSFET 3.0A DESCRIPTION ST3414A is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly	Original	ST3414A ST3414A OT-23 OT-23-	PDF
Untitled Abstract: No abstract text available Text: ST3414 N Channel Enhancement Mode MOSFET 4.0A DESCRIPTION ST3414 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are	Original	ST3414 ST3414 OT-23-3L OT-23-3L	PDF
Untitled Abstract: No abstract text available Text: ST3413A P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST3413A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited	Original	ST3413A ST3413A OT-23 -20V/-3 -20V/-2 -20V/-1	PDF
2SB187 Abstract: 2SB186 2SB185 2SB178 OC59 Datasheet of 2SB178 OC75 OC26 OC71 equivalent 2T301 Text: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic (V) (V) Electrical characteristics (Ta=25ºC) DC Current Gain fab/ft* hFE Ic (ºC) VCE(V) (MHz) (mA) Pc Tj (mA) (mW) Cob (pF) 2SB101 -30 -10 -50 125 75 1.2 2SB102 -30 -10 -50 180 75 1.2 2SB103 -30	Original	2SB101 2SB102 2SB103 2SB104 2SB105 2SB106 2SB107 2SB107A 2SB108 2SB108A 2SB187 2SB186 2SB185 2SB178 OC59 Datasheet of 2SB178 OC75 OC26 OC71 equivalent 2T301	PDF
2sb504 Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V Text: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ ; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1 n 3 St	OCR Scan	S029747 SS963& 2sb504 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V	PDF
OC75 Abstract: 6012B OC71 2Sd178 ST343 ST341 2S150 2S161 2S162 2S163 Text: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English	OCR Scan	2SD31 2SD32 2SD178 OC75 6012B OC71 ST343 ST341 2S150 2S161 2S162 2S163	PDF