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    ST341 Price and Stock

    Hang Crystal International X49ST3-4.194304-F18JJDTK

    CRYSTAL 4.194304MHZ 18PF SMD
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    DigiKey X49ST3-4.194304-F18JJDTK 35,200 10
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    X49ST3-4.194304-F18JJDTK Reel 35,200 1,000
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    Rochester Electronics LLC FST34170MTD

    IC MUX/DEMUX 16 X 1:2 56TSSOP
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    DigiKey FST34170MTD Tube 3,468 237
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    Rochester Electronics LLC FST34170MTDX

    IC MUX/DEMUX 16 X 1:2 56TSSOP
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    DigiKey FST34170MTDX Bulk 346
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    PacTech PGS-FL68-11ST341K1

    CABLE 8COND 28AWG BLACK 1000'
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    PacTech PGS-FL68-11ST341G1

    CABLE 8COND 28AWG GRAY 1000'
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    ST341 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    ST3413 Stanson Technology P Channel Enhancement Mode MOSFET Original PDF

    ST341 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet vgs 5v

    Abstract: ST341
    Text: ST3413A P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST3413A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited


    Original     		PDF ST3413A ST3413A OT-23-3L -20V/-3 -20V/-2 mosfet vgs 5v ST341

    mosfet 40a 12v

    Abstract: No abstract text available
    Text: N Channel Enhancement Mode MOSFET ST3414 4.0A DESCRIPTION The ST3414 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF ST3414 ST3414 OT-23-3L 55m-ohm 70m-ohm mosfet 40a 12v

    P channel MOSFET 1A

    Abstract: MOSFET NOTEBOOK sot-23 P-Channel MOSFET ST3413 marking 34A
    Text: P Channel Enhancement Mode MOSFET ST3413 -3.4A DESCRIPTION The ST3413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF ST3413 ST3413 OT-23-3L -20V/-3 95m-ohm -20V/-2 120m-ohm -20V/-1 145m-ohm P channel MOSFET 1A MOSFET NOTEBOOK sot-23 P-Channel MOSFET marking 34A

    Untitled

    Abstract: No abstract text available
    Text: ST3414A N Channel Enhancement Mode MOSFET 3.0A DESCRIPTION ST3414A is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly


    Original     		PDF ST3414A ST3414A OT-23 OT-23-

    Untitled

    Abstract: No abstract text available
    Text: ST3414 N Channel Enhancement Mode MOSFET 4.0A DESCRIPTION ST3414 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are


    Original     		PDF ST3414 ST3414 OT-23-3L OT-23-3L

    Untitled

    Abstract: No abstract text available
    Text: ST3413A P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST3413A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited


    Original     		PDF ST3413A ST3413A OT-23 -20V/-3 -20V/-2 -20V/-1

    2SB187

    Abstract: 2SB186 2SB185 2SB178 OC59 Datasheet of 2SB178 OC75 OC26 OC71 equivalent 2T301
    Text: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic (V) (V) Electrical characteristics (Ta=25ºC) DC Current Gain fab/ft* hFE Ic (ºC) VCE(V) (MHz) (mA) Pc Tj (mA) (mW) Cob (pF) 2SB101 -30 -10 -50 125 75 1.2 2SB102 -30 -10 -50 180 75 1.2 2SB103 -30


    Original     		PDF 2SB101 2SB102 2SB103 2SB104 2SB105 2SB106 2SB107 2SB107A 2SB108 2SB108A 2SB187 2SB186 2SB185 2SB178 OC59 Datasheet of 2SB178 OC75 OC26 OC71 equivalent 2T301

    2sb504

    Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
    Text: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St


    OCR Scan     		PDF S029747 SS963& 2sb504 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V

    OC75

    Abstract: 6012B OC71 2Sd178 ST343 ST341 2S150 2S161 2S162 2S163
    Text: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 2SD31 2SD32 2SD178 OC75 6012B OC71 ST343 ST341 2S150 2S161 2S162 2S163