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    ST3413 Search Results

    ST3413 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    ST3413 Stanson Technology P Channel Enhancement Mode MOSFET Original PDF

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    mosfet vgs 5v

    Abstract: ST341
    Text: ST3413A P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST3413A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited


    Original     		PDF ST3413A ST3413A OT-23-3L -20V/-3 -20V/-2 mosfet vgs 5v ST341

    P channel MOSFET 1A

    Abstract: MOSFET NOTEBOOK sot-23 P-Channel MOSFET ST3413 marking 34A
    Text: P Channel Enhancement Mode MOSFET ST3413 -3.4A DESCRIPTION The ST3413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF ST3413 ST3413 OT-23-3L -20V/-3 95m-ohm -20V/-2 120m-ohm -20V/-1 145m-ohm P channel MOSFET 1A MOSFET NOTEBOOK sot-23 P-Channel MOSFET marking 34A

    Untitled

    Abstract: No abstract text available
    Text: ST3413A P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST3413A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited


    Original     		PDF ST3413A ST3413A OT-23 -20V/-3 -20V/-2 -20V/-1