Untitled
Abstract: No abstract text available
Text: LSM330 iNEMO inertial module: 3D accelerometer and 3D gyroscope Datasheet - production data Description The LSM330 is a system-in-package featuring a 3D digital accelerometer with two embedded state machines that can be programmed to implement autonomous applications and a 3D digital
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LSM330
LSM330
LGA-24L
DocID023426
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philips ferrite 4b1
Abstract: philips ferrite core 4b1 MEA200 3122 108 339 3 1 philips MATV amplifiers OM2063 SC16 gt 6312 UHF amplifier module
Text: DISCRETE SEMICONDUCTORS DATA SHEET OM2063 Wideband amplifier module Product specification Supersedes data of June 1991 File under Discrete Semiconductors, SC16 1995 Nov 28 Philips Semiconductors Product specification Wideband amplifier module OM2063 DESCRIPTION
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OM2063
SCD46
143061/1000/02/pp12
philips ferrite 4b1
philips ferrite core 4b1
MEA200
3122 108 339 3 1
philips MATV amplifiers
OM2063
SC16
gt 6312
UHF amplifier module
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Untitled
Abstract: No abstract text available
Text: LSM6DS1 iNEMO inertial module: 3D accelerometer and 3D gyroscope Datasheet - preliminary data Description The LSM6DS1 is a system-in-package featuring a 3D digital accelerometer and a 3D digital gyroscope. ST’s family of MEMS sensor modules leverages the robust and mature manufacturing
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LGA-16L
DocID025605
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Untitled
Abstract: No abstract text available
Text: LSM6DS1 iNEMO inertial module: 3D accelerometer and 3D gyroscope Datasheet - preliminary data Description The LSM6DS1 is a system-in-package featuring a 3D digital accelerometer and a 3D digital gyroscope. ST’s family of MEMS sensor modules leverages the robust and mature manufacturing
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LGA-16L
DocID025605
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GaAs MMIC ESD, Die Attach and Bonding Guidelines
Abstract: AMMC-5026 AMMC-5026-W10 AMMC-5026-W50 HMMC-5026 Traveling Wave Amplifier
Text: AMMC-5026 2–35 GHz GaAs MMIC Traveling Wave Amplifier Data Sheet Chip Size: 3050 x 840 µm 119 x 33 mils Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils) Pad Dimensions: 75 x 75 µm (2.9 ± 0.4 mils) Description
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AMMC-5026
AMMC-5026
HMMC-5026
AMMC-5026-W10
AMMC-5026-W50
5989-3212EN
5989-3929EN
GaAs MMIC ESD, Die Attach and Bonding Guidelines
AMMC-5026-W10
AMMC-5026-W50
HMMC-5026
Traveling Wave Amplifier
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lsm9ds1tr
Abstract: LGA-24L
Text: LSM9DS1 iNEMO inertial module: 3D accelerometer, 3D gyroscope, 3D magnetometer Datasheet - preliminary data Applications • Indoor navigation Smart user interfaces Advanced gesture recognition Gaming and virtual reality input devices LGA-24L 3.5x3x1.0 mm
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LGA-24L
lsm9ds1tr
LGA-24L
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LSM9DS0
Abstract: No abstract text available
Text: LSM9DS0 iNEMO inertial module: 3D accelerometer, 3D gyroscope, 3D magnetometer Datasheet - production data Applications • Indoor navigation Smart user interfaces Advanced gesture recognition Gaming and virtual reality input devices LGA-24 4x4x1.0 mm
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LGA-24
DocID024763
LSM9DS0
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jat52
Abstract: TA-TSY-000191 PM5319 PM5319-NI PMC-2030860
Text: us t, 20 04 09 :2 1: 24 PM ARROW 622 ASSP Telecom Standard Product Data Sheet Released es da y, 10 Au g PM5319 gi es , In c. on Tu ARROW 622 Released Issue No. 2: July 2004 Do wn lo ad ed by Sc o tt E st es of i 2T ec h no lo ASSP Telecom Standard Product Data Sheet
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PMC-2031158,
PM5319
196-pin
PM5319-NI
jat52
TA-TSY-000191
PM5319
PM5319-NI
PMC-2030860
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ST Z0 103 MA
Abstract: No abstract text available
Text: What HEW LETT* mLliM PACKARD 2-1 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 F e atu res • High Output Pow er: 18.0 dBm Typical Pi ¿s at 12 GHz • High Gain: 9.0 dB TypicalGssat 12 GHz • Low C ost P lastic Package • Tape-and-Reel Packaging
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ATF-26884
ATF-26884
ST Z0 103 MA
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Untitled
Abstract: No abstract text available
Text: ill# ICW 0RKS W149 4 4 0 BX A G Pset Spread Spectrum Frequency Synthesizer Features • Spread Spectrum feature always enabled • Maximized EMI suppression using IC WORKS’ Spread Spectrum Technology • l2C interface for programming • Power management control inputs
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440BX
48MHz
24MHz
8-124MHz
FDS-044
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201 429 HP
Abstract: ATF-21186 ATF-21186-STR ATF-21186-TR1 0840 057 GLDB0 ga 1112
Text: TAff% HEW LETT mLftM P A C K A R D 0 .5 - 6 GHz G eneral P urpose G allium A rsenide FET Technical Data ATF-21186 Features Description • Low N o ise Figure: 0.5 dB Typ. @ 2 GHz • H igh O utpu t Pow er: 19 dBm Typ. P ldB @ 2 GHz • H igh MSG: 13.5 dB Typ. @ 2 GHz
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ATF-21186
ATF-21186
Arse38
0G177Ã
5091-4862E
5965-8716E
201 429 HP
ATF-21186-STR
ATF-21186-TR1
0840 057
GLDB0
ga 1112
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Untitled
Abstract: No abstract text available
Text: ill# ICW0RKS Preliminary W144 440BX AGPset Spread Spectrum Frequency Synthesizer • Supports frequencies up to 150MHz Features • Maximized EMI suppression using IC W O R K S ’ Spread Spectrum Technology • l2C interface for programming • Power management control inputs
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440BX
48MHz
24MHz
150MHz
250ps
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Untitled
Abstract: No abstract text available
Text: What HEWLETT* mLliM PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0186 Features Description • Cascadable 50 Q. Gain Block • 3 dB Bandwidth: DC to 0.9 GHz The MSA-0186 is a high perfor mance silicon bipolar Monolithic Microwave Integrated Circuit
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MSA-0186
MSA-0186
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Untitled
Abstract: No abstract text available
Text: Preliminary W145 ill# ICW 0RKS 440BX AGPSet Spread Spectrum Frequency Generator Features • Maximized EMI suppression using IC W O R KS’Spread Spectrum Technology • Single chip system FTG for Intei^ 440BX AGPset • • • • • • • Three copies of CPU output
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440BX
48MHz
24MHz
250pb
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Untitled
Abstract: No abstract text available
Text: ill# ICW 0RKS Advance Information W150 440BX AGPset Spread Spectrum Frequency Generator Features • Maximized EMI suppression using IC W O R KS’Spread Spectrum Technology • l2C interface for programming • Power m anagem ent control inputs • Single chip system FTG for InteP 440BX AGPset
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440BX
48MHz
24MHz
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Transistor TT 2246
Abstract: No abstract text available
Text: W hp% m LUM H E W L E TT PA CKA RD 1 .5 -1 8 GHz Surface Mount Pseudomorphic HEMT Technical Data ATF-36163 Features Surface Mount Package • Low M inim um N oise Figure: I dB Typical at 12 GHz 0.6 dB Typical at 4 GHz • A sso ciated Gain: 9.4 dB Typical at 12 GHz
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ATF-36163
OT-363
5964-4069E
5965-4747E
Transistor TT 2246
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Untitled
Abstract: No abstract text available
Text: CYPRESS PRELIMINARY W199 Spread Spectrum FTG for VIA Apollo Pro-133 Features Table 1. Mode Input Table • Maximized EMI suppression using Cypress’s Spread Spectrum Technology • Single-chip system frequency synthesizer for VIA Apollo Pro-133 Pin 2 PCLSTOP#
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Pro-133
48-MHz
24-MHz
48-pin
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Untitled
Abstract: No abstract text available
Text: P A IR C H II-D w w w .fairchildsem i.com s e m i c o n d u c t o r tm RC7102 BX Spread Spectrum Frequency Synthesizer for Pentium II Description • M aximized EMI suppression using Fairchild’s proprietary Spread Spectrum Technology • Single chip system frequency synthesizer for Intel BX
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48MHz
24MHz
150MHz
RC7102
RC7102
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Untitled
Abstract: No abstract text available
Text: What H E W L E T T mLnM P a c k a r d Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0505 Features Description • Cascadable 50 Q Gain Block The MSA-0505 is a high perfor m ance m edium pow er silicon bipolar M onolithic Microwave Integrated C ircuit MMIC housed
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MSA-0505
MSA-0505
5965-9581E
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250M
Abstract: IRFF220 IRFF221 IRFF222 IRFF223 T4 sm diode PD937
Text: HE 0 I MaSSMSZ 0GQT37Q Ö | Data Shçet No. PD-9.378E INTERNATIONAL R E C T I F I E R ' 7 -3 Ÿ -O Ÿ INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IOR IRFF220 IRFF221 IM-CHAIMIMEL POWER MOSFETs TQ-39 PACKAGE IRFFSSS IRFFSS3 Features: 200 Volt, 0.8 Ohm HEXFET
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G-352
250M
IRFF220
IRFF221
IRFF222
IRFF223
T4 sm diode
PD937
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5964-4069E
Abstract: saa 1094 ATF pHEMT MARKING VD9 saa 1059 SAA 1251 saa 1074 SAA 1085
Text: Who I HEW LETT 1 "rim P A C K A R D 1.5-18 GHz Surface Mount Pseudomorpltic HEMT Technical Data ATF-36163 Features Surface Mount Package • Low M inim um N oise F igure: I dB Typical at 12 GHz 0.6 dB Typical a t 4 GHz • A ssociated G ain: 9.4 dB Typical at 12 GHz
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ATF-36163
OT-363
Oj004
a079t0j0Q2
5964-4069E
4747E
5964-4069E
saa 1094
ATF pHEMT
MARKING VD9
saa 1059
SAA 1251
saa 1074
SAA 1085
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Untitled
Abstract: No abstract text available
Text: Whnt H E W L E T T mLEM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0786 Features C ascadable 50 Q. Gain B lock Low O perating V oltage: 4.0 V Typical Vd 3 dB Bandw idth: DC to 2.0 GHz 12.5 dB Typical Gain at 1.0 GHz U n con d ition ally Stab le
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MSA-0786
MSA-0786
5965-9594E
5968-4716E
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Untitled
Abstract: No abstract text available
Text: T h p t HEWLETT &"UM PA C K A R D 2 - 8 GHz Medium Power Gallium Arsenide FET Technical Data A TF-44101 Featu res • High Output Power: 32.0 dBm Typical Pi ^ at 4 GHz • High Gain a t 1 dB Compression: 8.5 dB Typical Gj ^ at 4 GHz • High Power Efficiency:
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TF-44101
ATF-44101
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Untitled
Abstract: No abstract text available
Text: What LETT mL'KM HEW PACKARD Cascadable Silicon Bipolar MMIC Am plifier Technical Data MSA-0670 Features • Cascadable 50 Î2 Gain Block • Low Operating Voltage: 3.5 V Typical Vd • 3 dB Bandwidth: DC to 1.0 GHz high reliability package. This MMIC is designed for use as a
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MSA-0670
MSA-0670
5965-9586E
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