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    250PB Price and Stock

    Nextgen Components 1206W106K250PB

    CAP. SMD,1206,X5R,10UF,10%,25V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1206W106K250PB Reel 6,000,000 2,000
    • 1 -
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    • 10000 $0.3485
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    Nextgen Components 1206W226K250PB

    CAP. SMD,1206,X5R,22UF,10%,25V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1206W226K250PB Reel 4,000,000 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.79112
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    Nextgen Components 1206B106K250PB

    CAP,SMD,1206,X7R,10UF,10%,25V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1206B106K250PB Reel 2,000,000 4,000
    • 1 -
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    • 10000 $0.2485
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    Central Semiconductor Corp 2N3250 PBFREE

    TRANS PNP 40V 0.2A TO18
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2N3250 PBFREE Bulk 1,822 1
    • 1 $1.41
    • 10 $1.174
    • 100 $0.9345
    • 1000 $0.84376
    • 10000 $0.84376
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    Avnet Americas 2N3250 PBFREE Box 2,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.93825
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    Mouser Electronics 2N3250 PBFREE 1,659
    • 1 $1.41
    • 10 $1.18
    • 100 $0.935
    • 1000 $0.844
    • 10000 $0.843
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    Vishay Siliconix IRFP250PBF

    MOSFET N-CH 200V 30A TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFP250PBF Tube 519 1
    • 1 $3.8
    • 10 $3.8
    • 100 $2.5797
    • 1000 $1.96347
    • 10000 $1.77375
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    RS IRFP250PBF Bulk 500
    • 1 -
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    • 100 -
    • 1000 $4.63
    • 10000 $3.94
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    Bristol Electronics IRFP250PBF 28
    • 1 -
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    New Advantage Corporation IRFP250PBF 4,875 1
    • 1 -
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    • 100 $1.81
    • 1000 $1.81
    • 10000 $1.69
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    Find more 250PB price and stock on Findchips.com

    250PB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    jrc 78L08

    Abstract: RESISTOR POTENTIOMETER GRM32ER71H106KA12L stripline power combiner splitter GRM31MR71H105KA88L grm32er71h106ka transistor J333 AN10923 GRM32ER71H106KA12 jrc78L08
    Text: AN10923 1.5 GHz Doherty power amplifier for base station applications using the BLF6G15L-250PBRN Rev. 1 — 14 March 2011 Application note Document information Info Content Keywords RF power transistor, Doherty architecture, LDMOS, Power amplifier, W-CDMA, LTE, Base station, BLF6G15L-250PBRN


    Original     		PDF AN10923 BLF6G15L-250PBRN BLF6G15L-250PBRN jrc 78L08 RESISTOR POTENTIOMETER GRM32ER71H106KA12L stripline power combiner splitter GRM31MR71H105KA88L grm32er71h106ka transistor J333 AN10923 GRM32ER71H106KA12 jrc78L08

    Untitled

    Abstract: No abstract text available
    Text: VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, 250 A to 320 A MAGN-A-PAK Power Modules FEATURES • High voltage • Electrically isolated base plate • 3000 VRMS isolating voltage • Industrial standard package


    Original     		PDF 250PbF, 270PbF, 320PbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VSK.170PbF, VSK.250PbF Series www.vishay.com Vishay Semiconductors SCR/SCR and SCR/Diode MAGN-A-PAK Power Modules , 170 A/250 A FEATURES • High voltage • Electrically isolated base plate • 3500 VRMS isolating voltage • Industrial standard package


    Original     		PDF 170PbF, 250PbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    BU 0603

    Abstract: 800B BLF6G15L 029-KW
    Text: BLF6G15L-250PBRN Power LDMOS transistor Rev. 2 — 3 November 2010 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance


    Original     		PDF BLF6G15L-250PBRN BU 0603 800B BLF6G15L 029-KW

    Untitled

    Abstract: No abstract text available
    Text: BLF7G22L-250PB; BLF7G22LS-250PB Power LDMOS transistor Rev. 01 — 16 December 2009 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1.


    Original     		PDF BLF7G22L-250PB; BLF7G22LS-250PB

    Untitled

    Abstract: No abstract text available
    Text: VS-VSK.170PbF, VS-VSK.250PbF Series www.vishay.com Vishay Semiconductors SCR/SCR and SCR/Diode MAGN-A-PAK Power Modules , 170 A/250 A FEATURES • High voltage • Electrically isolated base plate • 3500 VRMS isolating voltage • Industrial standard package


    Original     		PDF 170PbF, 250PbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: BLF6G15LS-250PBRN Power LDMOS transistor Rev. 2 — 18 July 2012 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance


    Original     		PDF BLF6G15LS-250PBRN

    transistor 832

    Abstract: No abstract text available
    Text: BLF6G15LS-250PBRN Power LDMOS transistor Rev. 2 — 18 July 2012 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance


    Original     		PDF BLF6G15LS-250PBRN transistor 832

    Untitled

    Abstract: No abstract text available
    Text: VSK.170PbF, VSK.250PbF Series Vishay Semiconductors SCR/SCR and SCR/Diode MAGN-A-PAK Power Modules , 170 A/250 A FEATURES • High voltage • Electrically isolated base plate • 3500 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly


    Original     		PDF 170PbF, 250PbF E78996 2002/95/EC 18-Jul-08

    6 PHASE FULL WAVE SCR BRIDGES

    Abstract: E78996 scr
    Text: VSK.170PbF, VSK.250PbF Series Vishay Semiconductors SCR/SCR and SCR/Diode MAGN-A-PAK Power Modules , 170 A/250 A FEATURES • High voltage • Electrically isolated base plate • 3500 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly


    Original     		PDF 170PbF, 250PbF E78996 2002/95/EC 11-Mar-11 6 PHASE FULL WAVE SCR BRIDGES E78996 scr

    E78996 scr

    Abstract: vskt 250
    Text: VSK.170PbF, VSK.250PbF Series Vishay Semiconductors SCR/SCR and SCR/Diode MAGN-A-PAK Power Modules , 170 A/250 A FEATURES • High voltage • Electrically isolated base plate • 3500 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly


    Original     		PDF 170PbF, 250PbF E78996 2002/95/EC 11-Mar-11 E78996 scr vskt 250

    13N50

    Abstract: 8140115 nxp marking code M2
    Text: BLF6G15L-250PBRN Power LDMOS transistor Rev. 1 — 14 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance


    Original     		PDF BLF6G15L-250PBRN 13N50 8140115 nxp marking code M2

    Untitled

    Abstract: No abstract text available
    Text: VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, 250 A to 320 A MAGN-A-PAK Power Modules FEATURES • High voltage • Electrically isolated base plate • 3000 VRMS isolating voltage • Industrial standard package


    Original     		PDF 250PbF, 270PbF, 320PbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    transistor 832

    Abstract: 831 transistor
    Text: BLF6G15LS-250PBRN Power LDMOS transistor Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance


    Original     		PDF BLF6G15LS-250PBRN transistor 832 831 transistor

    thyristor tt 18 n 800

    Abstract: vskh vskt 250 vskt250 scr k 5500 thyristor tt 18 N 1100
    Text: VSK.170PbF, VSK.250PbF Series Vishay High Power Products SCR/SCR and SCR/Diode MAGN-A-PAK Power Modules , 170 A/250 A FEATURES • High voltage • Electrically isolated base plate • 3500 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly


    Original     		PDF 170PbF, 250PbF 2002/95/EC 18-Jul-08 thyristor tt 18 n 800 vskh vskt 250 vskt250 scr k 5500 thyristor tt 18 N 1100

    Untitled

    Abstract: No abstract text available
    Text: VS-VSK.170PbF, VS-VSK.250PbF Series www.vishay.com Vishay Semiconductors SCR/SCR and SCR/Diode MAGN-A-PAK Power Modules , 170 A/250 A FEATURES • High voltage • Electrically isolated base plate • 3500 VRMS isolating voltage • Industrial standard package


    Original     		PDF 170PbF, 250PbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    DATASHEET SCR 131

    Abstract: vskt250 scr battery charger thyristor TT 45 N 1200
    Text: VSK.170PbF, .250PbF Series Vishay High Power Products SCR/SCR and SCR/Diode MAGN-A-PAKTM Power Modules , 170/250 A FEATURES • • • • • • • • • High voltage Electrically isolated base plate 3500 VRMS isolating voltage Industrial standard package


    Original     		PDF 170PbF, 250PbF 18-Jul-08 DATASHEET SCR 131 vskt250 scr battery charger thyristor TT 45 N 1200

    Untitled

    Abstract: No abstract text available
    Text: BLF6G15L-250PBRN Power LDMOS transistor Rev. 2 — 3 November 2010 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance


    Original     		PDF BLF6G15L-250PBRN

    filter for GPS spice

    Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
    Text: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率


    Original     		PDF RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode

    MPF102 spice model

    Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
    Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for


    Original     		PDF te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H

    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    irkv 300

    Abstract: IRKT
    Text: Bulletin I27204 09/05 IRK.PbF SERIES SCR / SCR and SCR / DIODE MAGN-A-pak  Power Modules Features High voltage Electrically isolated base plate 3000 V RMS isolating voltage Industrial standard package 170A 250A Simplified mechanical designs, rapid assembly


    Original     		PDF I27204 12-Mar-07 irkv 300 IRKT

    Untitled

    Abstract: No abstract text available
    Text: LÍ«S G25 DecorLEDm, 25mm Edison Screw Based Lamps Replaces Incandescent # Application Specific Packages 660nm Ultra Red GaAIAs/GaAIAs 633nm S u p er Red InG aA lP Power Part N um ber H Voltage C ontact Polarity DEC-G 25-0UR-120A 120VAC V = DC only A = AC only


    OCR Scan     		PDF 660nm 25-0UR-014V DEC-G25-OUR-024V 25-0UR-120A 25-0UR-240A 12/14V 120VAC 240VAC 633nm 25-0ER-014V