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    ST MARKING C4 Search Results

    ST MARKING C4 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    ST MARKING C4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING C4

    Abstract: KTX201E "marking C4"
    Text: SEMICONDUCTOR KTX201E MARKING SPECIFICATION TESV PACKAGE 1. Marking method Laser Marking C4 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark C KTX201E hFE Grade 4 Y 4 , GR(6) * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No.


    Original     		PDF KTX201E 2006-2010-ek MARKING C4 KTX201E "marking C4"

    Untitled

    Abstract: No abstract text available
    Text: STAC4933 RF power transistor: HF/VHF/UHF RF power N-channel MOSFET Preliminary data Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ STAC air cavity packaging technology STAC package


    Original     		PDF STAC4933 STAC4933 STAC177B

    Untitled

    Abstract: No abstract text available
    Text: STAC3932B HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Excellent thermal stability • Common source push-pull configuration • POUT = 580 W typ. with 24.6 dB gain @ 123 MHz • In compliance with the 2002/95/EC European directive


    Original     		PDF STAC3932B 2002/95/EC STAC244B STAC3932B STAC3932 DocID15449

    Untitled

    Abstract: No abstract text available
    Text: SD4933 HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Improved ruggedness V BR DSS > 200 V • Excellent thermal stability • 20:1 all phases load mismatch capability • POUT = 300 W min. with 24 dB gain @ 30 MHz • In compliance with the 2002/95/EEC European


    Original     		PDF SD4933 2002/95/EEC SD4933 DocID15487

    transistor marking G9

    Abstract: J4-81 j4 81 MARKING D8
    Text: STAC3933 RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ STAC air cavity packaging technology STAC package


    Original     		PDF STAC3933 STAC3933 STAC177B transistor marking G9 J4-81 j4 81 MARKING D8

    STAC3932

    Abstract: STAC3932B STAC244B
    Text: STAC3932B HF/VHF/UHF RF power N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 580 W typ. with 24.6 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive Description


    Original     		PDF STAC3932B 2002/95/EC STAC3932B STAC244B STAC3932

    Untitled

    Abstract: No abstract text available
    Text: SD4933 RF power transistor HF/VHF/UHF N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european


    Original     		PDF SD4933 2002/95/EEC SD4933

    Untitled

    Abstract: No abstract text available
    Text: STAC9200 200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package Datasheet - preliminary data Features • Improved ruggedness: V BR DSS > 80 V • Load mismatch 65:1 all phases @ 200 W / 32 V / 860 MHz under 1 msec - 10% • POUT = 200 W min. (250 W typ.) with 16 dB


    Original     		PDF STAC9200 2002/95/EC STAC244B STAC9200 DocID025416

    SD4933

    Abstract: M177 marking code h4 capacitor transistor marking code 325
    Text: SD4933 HF/VHF/UHF RF power N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European


    Original     		PDF SD4933 2002/95/EEC SD4933 M177 marking code h4 capacitor transistor marking code 325

    LSE B9 transformer

    Abstract: SD4933MR LSE B6 transformer SD4933
    Text: SD4933MR 50 V moisture resistant DMOS transistor for ISM applications Datasheet — preliminary data Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz


    Original     		PDF SD4933MR 2002/95/EEC M177MR SD4933MR LSE B9 transformer LSE B6 transformer SD4933

    Untitled

    Abstract: No abstract text available
    Text: SD2941-10 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175 W min. with 15 dB gain @ 175 MHz ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures


    Original     		PDF SD2941-10 SD2941-10 SD2931-10

    SD2941-10

    Abstract: VK200 r.f choke SD2941 st marking EE code ST SD2931
    Text: SD2941-10 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175 W min. with 15 dB gain @ 175 MHz ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures


    Original     		PDF SD2941-10 SD2941-10 SD2931-10 VK200 r.f choke SD2941 st marking EE code ST SD2931

    Untitled

    Abstract: No abstract text available
    Text: SD4933MR 50 V moisture resistant DMOS transistor for ISM applications Datasheet - preliminary data Features • Improved ruggedness V BR DSS > 200 V • Excellent thermal stability • 20:1 all phases load mismatch capability • POUT = 300 W min. with 24 dB gain @ 30 MHz


    Original     		PDF SD4933MR 2002/95/EEC M177MR SD4933MR DocID023664

    Untitled

    Abstract: No abstract text available
    Text: SD2942 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push pull ■ POUT = 350 W min. with 15 db gain @ 175 MHz ■ Low RDS on Description M244 Epoxy sealed The SD2942 is a gold metallized N-channel MOS


    Original     		PDF SD2942 SD2942 SD2932. SD2942W

    Untitled

    Abstract: No abstract text available
    Text: SD2943 HF/VHF/UHF RF power N-channel MOSFETs Features • High power capability ■ POUT = 350 W min. with 22dB gain @ 30 MHz ■ PSAT = 450 W ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures ■ Gold metallization ■ Excellent thermal stability


    Original     		PDF SD2943 SD2943 SD2933,

    Untitled

    Abstract: No abstract text available
    Text: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed


    Original     		PDF SD2933 SD2933

    C4814

    Abstract: mobil IMIC4814EYB
    Text: C4814 Low EMI Clock Generator with I2C for Mobil Pentium System Boards Approved Product PRODUCT FEATURES T T T T T T T T T T T T T T Supports Synchronous PCI Bus Clocking. 3 CPU clocks 1 AGP clock Up to 8 SDRAM clocks for 4 mobile SO DIMMs. 7 PCI synchronous clocks.


    Original     		PDF C4814 C4814EYB IMIC4814EYB C4814 mobil IMIC4814EYB

    SD2933W

    Abstract: No abstract text available
    Text: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed


    Original     		PDF SD2933 SD2933 SD2933W SD2933W

    resistor 560 ohm

    Abstract: SD2933
    Text: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed


    Original     		PDF SD2933 SD2933 resistor 560 ohm

    sd2943

    Abstract: No abstract text available
    Text: SD2943 HF/VHF/UHF RF power N-channel MOSFETs Features • High power capability ■ POUT = 350 W min. with 22dB gain @ 30 MHz ■ PSAT = 450 W ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures ■ Gold metallization ■ Excellent thermal stability


    Original     		PDF SD2943 SD2943 SD2933,

    92196A146

    Abstract: SD3933 rf transistor mark code H1 12AWG 700B M177 toroid 6009 McMaster-Carr
    Text: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF


    Original     		PDF SD3933 2002/95/EEC SD3933 92196A146 rf transistor mark code H1 12AWG 700B M177 toroid 6009 McMaster-Carr

    Untitled

    Abstract: No abstract text available
    Text: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features • Gold metalization • Excellent thermal stability • Common source configuration • POUT = 300 W min. with 20 dB gain @ 30 MHz • Thermally enhanced packaging for lower


    Original     		PDF SD2933 SD2933 DocID7193

    l2c48

    Abstract: No abstract text available
    Text: TOSHIBA 5D L2 C48A, 5F L2 C48A, U 5D L2 C48A, U 5FL2 C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2C48A, 5FL2C48A, U5DL2C48A, U5FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Rep etitive P e a k Reverse Voltage


    OCR Scan     		PDF 5DL2C48A, 5FL2C48A, U5DL2C48A, U5FL2C48A L2C48A, 5FL2C48A 5FL2C48A l2c48

    diode t 5d

    Abstract: tim 5f diode 5d MARKING 5D DIODE 5dl2c
    Text: TOSHIBA 5D L2 C48A, 5F L2 C48A, U 5D L2 C48A, U 5FL2 C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2C48A, 5FL2C48A, U5DL2C48A, U5FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Rep etitive P e a k Reverse Voltage


    OCR Scan     		PDF 5DL2C48A, 5FL2C48A, U5DL2C48A, U5FL2C48A L2C48A, 5FL2C48A L2C48A 5FL2C48A diode t 5d tim 5f diode 5d MARKING 5D DIODE 5dl2c