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    STMicroelectronics SD3933

    RF MOSFET 100V M177
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    SD3933 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SD3933 STMicroelectronics RF FETs, Discrete Semiconductor Products, IC TRANS RF PWR HF/VHF/UHF M177 Original PDF
    SD3933 STMicroelectronics RF power transistors HF/VHF/UHF N-channel MOSFETs Original PDF
    SD3933 STMicroelectronics RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Original PDF

    SD3933 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    McMaster-Carr

    Abstract: m174 92196a ATC200B marking h5 92196A1 91252 5050-0037
    Text: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF


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    PDF SD3933 2002/95/EEC SD3933 McMaster-Carr m174 92196a ATC200B marking h5 92196A1 91252 5050-0037

    Untitled

    Abstract: No abstract text available
    Text: SD3933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs TARGET DATA • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 28 dB GAIN @ 30 MHz M177 epoxy sealed DESCRIPTION The SD3933 is a gold metallized N-Channel MOS


    Original
    PDF SD3933 SD3933

    Untitled

    Abstract: No abstract text available
    Text: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF


    Original
    PDF SD3933 2002/95/EEC SD3933

    McMaster-Carr

    Abstract: SD3933 12AWG 700B M177 MCMASTER 92196A146 ATC200B103MW50X 92196A1 92196A108
    Text: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive


    Original
    PDF SD3933 2002/95/EEC SD3933 McMaster-Carr 12AWG 700B M177 MCMASTER 92196A146 ATC200B103MW50X 92196A1 92196A108

    M177

    Abstract: SD3933
    Text: SD3933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs PRELIMINARY DATA • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 28 dB GAIN @ 30 MHz M177 epoxy sealed DESCRIPTION The SD3933 is a gold metallized N-Channel MOS


    Original
    PDF SD3933 SD3933 M177

    mallory date code

    Abstract: McMaster-Carr 92196A146 1200 uF 63V capacitor SD3933 arco capacitors capacitor ceramic variable RF MALLORY CAPACITOR date code Mallory Capacitor M177
    Text: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary Data Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European


    Original
    PDF SD3933 2002/95/EEC SD3933 200MHz. mallory date code McMaster-Carr 92196A146 1200 uF 63V capacitor arco capacitors capacitor ceramic variable RF MALLORY CAPACITOR date code Mallory Capacitor M177

    9966

    Abstract: SHT31 12AWG 700B M177 SD3933 91252 ATC700B122 McMaster-Carr a/IC+oz+9966
    Text: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF


    Original
    PDF SD3933 2002/95/EEC SD3933 9966 SHT31 12AWG 700B M177 91252 ATC700B122 McMaster-Carr a/IC+oz+9966

    92196A146

    Abstract: SD3933 rf transistor mark code H1 12AWG 700B M177 toroid 6009 McMaster-Carr
    Text: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF


    Original
    PDF SD3933 2002/95/EEC SD3933 92196A146 rf transistor mark code H1 12AWG 700B M177 toroid 6009 McMaster-Carr

    mallory date code

    Abstract: McMaster-Carr 12AWG 700B M177 SD3933 st code vishay label
    Text: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary Data Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european


    Original
    PDF SD3933 2002/95/EEC SD3933 200MHz. mallory date code McMaster-Carr 12AWG 700B M177 st code vishay label

    Untitled

    Abstract: No abstract text available
    Text: VRF3933 VRF3933 MP 100V, 300W, 150MHz RF POWER VERTICAL MOSFET D The VRF3933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


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    PDF VRF3933 VRF3933 150MHz 30MHz, SD3933

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    Untitled

    Abstract: No abstract text available
    Text: VRF3933 VRF3933 MP 100V, 300W, 150MHz RF POWER VERTICAL MOSFET D The VRF3933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


    Original
    PDF VRF3933 VRF3933 150MHz 30MHz, SD3933

    SD2942

    Abstract: PD85035-E DB-85006L-960 STAC244B SD2941-10 SD57045 DB-85035-860 PowerSO-10RF PD20010-E PD55015-E
    Text: Radio frequency technologies for innovative solutions Selection guide December 2009 www.st.com/rf DMOS ISM & FM broadcast applications Part number Frequency MHz Pout (W) VDD (V) Gain (dB) Efficiency (%) Package SD2900 400 5 28 13.5 45 M113 SD2902 400 15


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    PDF SD2900 SD2902 SD2903 SD2904 SD2918 SD2931-10 SD2932 SD2933 SD2941-10 SD2942 SD2942 PD85035-E DB-85006L-960 STAC244B SD2941-10 SD57045 DB-85035-860 PowerSO-10RF PD20010-E PD55015-E

    400w class d schematic

    Abstract: 27.12Mhz
    Text: Application Note 1813 27.12 MHz, CLASS-E, 400W RF Generator using a Microsemi DRF1200 Driver/MOSFET Hybrid Overview The DRF1200/Class-E 27M Reference design is available to expedite the evaluation of the DRF1200 Driver MOSFET hybrid. This Application Note or Reference Design Kit does not


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    PDF DRF1200 DRF1200/Class-E DRF1200 1813-B/04 400w class d schematic 27.12Mhz

    Untitled

    Abstract: No abstract text available
    Text: VRF3933 100V, 300W, 150MHz RF POWER VERTICAL MOSFET D The VRF3933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


    Original
    PDF VRF3933 150MHz VRF3933 30MHz, SD3933

    Untitled

    Abstract: No abstract text available
    Text: VRF3933 VRF3933 MP 100V, 300W, 150MHz RF POWER VERTICAL MOSFET D The VRF3933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


    Original
    PDF VRF3933 VRF3933 150MHz 30MHz, SD3933

    EPIRB

    Abstract: SD2942 SD3933 class AB hf bipolar PD55015 SONAR car alarm SD57045 "class AB Linear" hf PD55035 sd2931 fm
    Text: LDMOS in plastic packages HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications Freq. [MHz] Pout [W] Gain typ [dB] VDD [V] Class Eff. (Typ) [%] Package PD54003 500 3 12 7.5 AB 55 PowerSO-10RF• PD54008


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    PDF PowerSO-10RF PD54003 PowerSO-10RF· PD54008 PD55003 PD55008 PD55015 EPIRB SD2942 SD3933 class AB hf bipolar PD55015 SONAR car alarm SD57045 "class AB Linear" hf PD55035 sd2931 fm

    SD2942

    Abstract: PD85035s-e sd2931 fm SD57045 PD55015-E PD85035 PD55015 SD56120M PD85035-E SD2933
    Text: Radio frequency technologies for innovative solutions Selection guide March 2008 www.st.com/rf DMOS ISM & FM broadcast applications Part number SD2900 SD2902 SD2903 SD2904 SD2918 SD2931-10 SD2932 SD2933 SD2941-10 SD2942 SD2943 STAC2932B * SD3931-10 SD3932


    Original
    PDF SD2900 SD2902 SD2903 SD2904 SD2918 SD2931-10 SD2932 SD2933 SD2941-10 SD2942 SD2942 PD85035s-e sd2931 fm SD57045 PD55015-E PD85035 PD55015 SD56120M PD85035-E SD2933

    SD57045

    Abstract: PD55003L "class AB Linear" hf DB-54008L-830 PD84001 SD2942 smd code ab PD55015 PD57030S PD85015
    Text: Radio Frequency technologies for innovative solutions Selection guide July 2006 www.st.com/rf LDMOS in plastic packages HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications Freq. [MHz] Pout [W] Gain typ


    Original
    PDF PowerSO-10RF PD54003 PowerSO-10RF· PD54008 PD55003 PD55008 PD55015 SD57045 PD55003L "class AB Linear" hf DB-54008L-830 PD84001 SD2942 smd code ab PD55015 PD57030S PD85015