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    ST 9012 G Search Results

    ST 9012 G Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    SER1590-122MLD Coilcraft Inc General Purpose Inductor, 1.2uH, 20%, 1 Element, Ferrite-Core, SMD, 6226, CHIP, 6226, ROHS COMPLIANT Visit Coilcraft Inc
    SER1590-122ML Coilcraft Inc Power inductor, high current, 20% tol, SMT, RoHS Visit Coilcraft Inc
    SER1590-122 Coilcraft Inc Power inductor, high current, 20% tol, SMT, RoHS Visit Coilcraft Inc
    SER1590-122MLB Coilcraft Inc General Purpose Inductor, 1.2uH, 20%, 1 Element, Ferrite-Core, SMD, 6226, CHIP, 6226, ROHS COMPLIANT Visit Coilcraft Inc

    ST 9012 G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor c 9012

    Abstract: PNP 9012 9012 transistor 9012 9013 NPN 9012 9012 pnp 9012 transistor br 9012 9012 pnp transistor 9013 transistor pnp
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    PDF 20MHz transistor c 9012 PNP 9012 9012 transistor 9012 9013 NPN 9012 9012 pnp 9012 transistor br 9012 9012 pnp transistor 9013 transistor pnp

    Transistor-9013 h

    Abstract: Transistor 9013 transistor BR 9013 9012 pnp data sheet transistor 9012 transistor c 9012 PNP 9012 data sheet NPN 9013 Transistor 9012 G 9013 transistor
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    transistor c 9012

    Abstract: PNP 9012 9012 br 9012 transistor 9012 9013 NPN 9012 transistor npn c 9013 9012 pnp 9012 transistor transistor 9013 H NPN
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    PDF 20MHz transistor c 9012 PNP 9012 9012 br 9012 transistor 9012 9013 NPN 9012 transistor npn c 9013 9012 pnp 9012 transistor transistor 9013 H NPN

    transistor c 9012

    Abstract: PNP 9012 BR 9012 9012 transistor 9012 pnp transistor transistor 9012 9013 NPN 9012 9012 Transistor 9012 G transistor s 9012
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    PDF 20MHz transistor c 9012 PNP 9012 BR 9012 9012 transistor 9012 pnp transistor transistor 9012 9013 NPN 9012 9012 Transistor 9012 G transistor s 9012

    transistor c 9012

    Abstract: PNP 9012 9012 pnp transistor 9012 9013 9012 transistor BR 9013 Transistor 9012 G NPN 9012 BR 9012 9012 transistor
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    PDF 20MHz transistor c 9012 PNP 9012 9012 pnp transistor 9012 9013 9012 transistor BR 9013 Transistor 9012 G NPN 9012 BR 9012 9012 transistor

    transistor BR 9013

    Abstract: transistor c 9013 transistor 9013 NPN 9013 s 9013 h PNP 9013 9013 transistor BR 9012 c 9013 g 9013 npn transistor
    Text: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    PDF 50MHz transistor BR 9013 transistor c 9013 transistor 9013 NPN 9013 s 9013 h PNP 9013 9013 transistor BR 9012 c 9013 g 9013 npn transistor

    transistor BR 9013

    Abstract: transistor c 9013 transistor 9013 9013 transistor BR 9013 9013 pnp NPN 9013 9013 NPN Transistor Transistor-9013 h 9013 NPN Output Transistor
    Text: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    PDF 50MHz transistor BR 9013 transistor c 9013 transistor 9013 9013 transistor BR 9013 9013 pnp NPN 9013 9013 NPN Transistor Transistor-9013 h 9013 NPN Output Transistor

    transistor c 9013

    Abstract: transistor BR 9013 NPN 9013 9013 transistor transistor 9013 BR 9013 9013 npn transistor 9013 pnp pin configuration NPN transistor 9013 npn 9013
    Text: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    PDF 50MHz transistor c 9013 transistor BR 9013 NPN 9013 9013 transistor transistor 9013 BR 9013 9013 npn transistor 9013 pnp pin configuration NPN transistor 9013 npn 9013

    NPN 9013

    Abstract: transistor BR 9013 pin configuration NPN transistor 9013 npn 9013 npn transistor 9013 transistor pin configuration NPN transistor 9012 PNP 9013 NPN transistor c 9013 9013 pnp data sheet NPN 9013
    Text: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    PDF 50MHz NPN 9013 transistor BR 9013 pin configuration NPN transistor 9013 npn 9013 npn transistor 9013 transistor pin configuration NPN transistor 9012 PNP 9013 NPN transistor c 9013 9013 pnp data sheet NPN 9013

    transistor BR 9013

    Abstract: BR 9013 transistor 9012 data sheet NPN 9013 9013 transistor 9013 npn transistor datasheet transistor 9013 data sheet transistor 9012 transistor c 9013 9013 npn
    Text: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    6-60E

    Abstract: N 27 E
    Text: 10 M A T E R IA L NO. 836149012 ENG. NO. 83614-9012 .965 24.51 1.185 , -MAX 30.10 • .810 20.57 ' t>n J08 7.82 .260 e 6.60 TOP OF PCB .27 6.78 1.19 4 PLACES R EF RECOMMENDED P A N E L CUT-OUT .050/1.27 PANEL THICKNESS MAX. 2-56 JAC KPO ST 2 PLA C E S 4.72


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    PDF t4/15 SD-83614--001 6-60E N 27 E

    P5-83421-9000

    Abstract: SD-83614-001
    Text: 10 M A T E R IA L NO. 836149012 ENG. NO. 83614-9012 r r .27 6.78 R EF P A N E L CUT-OUT .050/1.27 PAN EL THICKNESS MAX. -56 JAC KPO ST 2 PLA C E S U86 -MAX 4.72 .41 10.3 flnnnmyinnnnn. R EF .050 RECOMMENDED P A N E L THICKNESS TYP • .025 C 0.64 .ES 4 PLACED


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    PDF P5-83421-9000 SD-83614-001

    c20yw

    Abstract: AD9012 AD9768 AD9012AN
    Text: A N AL OG D E V I C E S INC 4SE » Bl OfilbflGO a 0 3 Q b ä M ä • AN ALO G D E V IC E S ANA High Speed 8-Bit TTL A/D Converter T-51-/0-08 AD9012 FEATURES 100MSPS Encode Rate Very Low Input Capacitance - 16pF Low Power - 1W TTL Compatible Outputs MIL-STD-883 Compliant Versions Available


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    PDF D030bà T-51-/0-08 AD9012 100MSPS MIL-STD-883 0Q30bRQ c20yw AD9768 AD9012AN

    L74A

    Abstract: AD9012 ladder logic for analog in put AD9611
    Text: AN ALO G D E V IC E S High Speed 8-Bit TTL A/D Converter AD9012 FEATURES 100MSPS Encode Rate Very Low Input Capacitance - 16pF Low Power - 1W TTL Compatible Outputs MIL-STD-883 Compliant Versions Available F U N C T IO N A L BLO CK DIAGRAM AD9012 AN A LO G IN I


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    PDF AD9012 100MSPS MIL-STD-883 AD9012 74as04 L74A ladder logic for analog in put AD9611

    Untitled

    Abstract: No abstract text available
    Text: AtO-2 6.0+o 1 CM CO 7.62 to 2 io CM io o P = 2 . 5 4 t o 03 9 .7 to -3 05 A A A A A A A A O ON 1 1 . 4 ±0.03 2 3 4 5 6 7 8 0 . 6 to-Q 3 WIRING DIAGRAM 1 2 3 4 5 P.C.B. LAYOUT L=2.54x P-1 9001 9002 9003 9004 9005 9006 9007 9008 9009 9010 9012 TG TG TG TG


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    PDF LULU20+ LUIU20+ 90/S0

    T52C

    Abstract: No abstract text available
    Text: MICRON M T52C 9012 1K x 9 FIFO FIFO 1K x 9 FIFO WITH PROGRAMMABLE FLAGS FEATURES • • • • • • • • • • • • Very high speed: 15,20,25 and 35ns access High-performance, low-power CMOS process Single +5V ±10% supply Low power: 5mW typical (standby ; 350mW typical


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    PDF 350mW 28-Pin MTS2C9012 10-BYTE MT52C9012 T52C

    Untitled

    Abstract: No abstract text available
    Text: 4 P/N APPLICABLE NOTE S -1 -1 S F -1 C C -1 C C S F -2 -2 S F -2 C C -2 C C S F -3 -3 S F -3 C C -3 C C S F 1,2 1,2 1,2 1,2 1,2 1,2 1,2 1,2 1,2 1,2 1,2 1,2 3 (0 A) .143 .143 .143 .143 .088 .088 .088 .088 .143 .143 .143 .143 MIN MIN MIN MIN MIN MIN MIN MIN


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    Untitled

    Abstract: No abstract text available
    Text: FLASH MEMORY CMOS 16 M 2 M x 8 BIT MBM29F017-90/-12 • FEATURES • • • • • • • • • • • • • • • Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash


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    PDF MBM29F017-90/-12 48-pin 40-pin F48030S MBM29F017 LCC-40P-M02) 40052S

    IRf 9024

    Abstract: 9H20 9S05A ST 9014 C
    Text: SSI • GATES, BUFFERSAND INVERTERS STANDARD HIGH SPEED SUPER HIGH SPEED SCHOTTKY tpd = 8 ns Pd = 10 mW per Gate tpd = 6 ns Pd = 22 mW per Gate tpd = 3 ns Pd " 19 mW per Gate ^ 0°C to + 7 0 °C and - 5 5 ° t o +125° C V 9002 0° to +70° C - 5 5 ° to +125°C


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    PDF 00/74H 9H01/74H01 00/54H 9H01/54H01 9S00/74S00 9S00/54S00 9S03/54S03 9S03/74S03 10/74H 22/74H IRf 9024 9H20 9S05A ST 9014 C

    74LS186

    Abstract: SN74LS165 54ls166 IC 74165 transistor c 9012 74165 block diagram Transistor 9012 ax
    Text: TTL MSI TYPES SN5416S, SN54LS165, SN74165, SN74LS165 PARALLEL-LOAD 8-BIT SHIFT RE6ISTERS B U L L E T I N N O . D L-S 761 13 76 , O C T O B E R 1976 SN 5 4 1 6 6 , S N 5 4 L S 1 6 6 . . . J O R W P A C K A G E SN 7 41 65 , S N 7 4 L S 1 6 5 . . . J O R N P A C K A G E


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    PDF SN5416S, SN54LS165, SN74165, SN74LS165 LS165 SN54165, SNS4LSI85, SN74165 74LS186 54ls166 IC 74165 transistor c 9012 74165 block diagram Transistor 9012 ax

    marking AHF

    Abstract: No abstract text available
    Text: PRELIMINARY p ilC R O N M T52C 9012 FIFO 1K x 9 FIFO WITH PROGRAMMABLE FLAGS FEATURES • • • • • • • • OPTIONS • Tim ing 15ns access 20ns access 25ns access 35ns access PIN ASSIGNMENT Top View 28-Pin SOJ (A-9, A -11) (E-8) W|fl ^ 09 |2 Dd I 3


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    PDF 28-Pin 10-BYTE MT52C9012 11/SI marking AHF

    Untitled

    Abstract: No abstract text available
    Text: SEM ICONDUCTOR KTC9013 TECHNI CAL DATA EPI TAXI AL PLANAR NPN TRA NS IST OR G E N E R A L PUR PO SE A PPLICATION. SW ITC H IN G APPLICATIO N. FEA T U RE S • Excellent h FE Linearity. • Complementary to K TC 9012. DIM G -1 M A X IM U M RATING Ta=25°C


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    PDF KTC9013

    I80386

    Abstract: KYOCERA 50Mhz oscillator 45 MHz clock oscillator intel 80386
    Text: KYOCERA INTL/ A V X CORP 5 7E 5 2 ^ 0 7 J> D 0 0 4 G liS Q M S IKAVX M C SKyC KER a 386-HC Crystal Clock Oscillators for Intel 80386 i80386 Compatible - f 0 : 24, 32, 40, 50 MHz FEATURES HOW TO ORDER 1 World’s only clock oscillator specifi­ cally designed to meet the rigorous


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    PDF D004Gl 386-HC i80386 150pF. 150pF 50MHz 0000M 150PF KYOCERA 50Mhz oscillator 45 MHz clock oscillator intel 80386

    2n120

    Abstract: Transistor 9012 ax 9012 transistor
    Text: TYPE 2N120 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T I N NO. D L -S 58900, M A R C H 1958 76 to 333 beta spread Specifically designed for high gain at high temperatures m echanical d a ta W elded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.


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    PDF 2N120 7S222 Transistor 9012 ax 9012 transistor