FPT-48P-M19
Abstract: FPT-48P-M20 mbm28f800 MBM28F800TA 77ff
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20841-4E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands
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DS05-20841-4E
8/512K
9F800TA-55/-70/-90/MBM29F800BA-55/-70/-90
48-pin
44-pin
FPT-48P-M19
FPT-48P-M20
mbm28f800
MBM28F800TA
77ff
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FPT-48P-M19
Abstract: FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball
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DS05-20871-5E
MBM29SL800TD/BD-10/12
MBM29SL800TD/BD
48-pin
48-ball
48-ball
MBM29SL800TD/MBM29SL800BD
F0210
FPT-48P-M19
FPT-48P-M20
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BGA-48P-M13
Abstract: FPT-48P-M19 FPT-48P-M20 MBM29LV160B-12PBT
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-6E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 • GENERAL DESCRIPTION The MBM29LV160T/B is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words
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DS05-20846-6E
9LV160T-80/-90/-12/MBM29LV160B-80/-90/-12
MBM29LV160T/B
16M-bit,
48-pin
48-ball
F0306
BGA-48P-M13
FPT-48P-M19
FPT-48P-M20
MBM29LV160B-12PBT
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50REF
Abstract: FPT-48P-M19 FPT-48P-M20 MBM30LV0128
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20885-2E FLASH MEMORY CMOS 128 M 16 M x 8 BIT NAND-type MBM30LV0128 • DESCRIPTION The MBM30LV0128 device is a single 3.3 V 16 M × 8 bit NAND flash memory organized as 528 byte × 32 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to
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DS05-20885-2E
MBM30LV0128
MBM30LV0128
50REF
FPT-48P-M19
FPT-48P-M20
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MARKING SA70
Abstract: MBM29DL324
Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
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F0306
MARKING SA70
MBM29DL324
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-1E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in
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DS05-20892-1E
MBM29PDD322TE/BE
32M-bit,
48-pin
63-ball
MBM29PDD322TE/BE
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MBM29F016A-90PFTN
Abstract: No abstract text available
Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
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F0306
MBM29F016A-90PFTN
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29DL32BF
Abstract: MBM29DL32
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF 70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V
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MBM29DL32TF/BF
MBM29DL32TF/BF
29DL32BF
MBM29DL32
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LCC-40P-M02
Abstract: FPT-48P-M19 FPT-48P-M20 MBM29F017A SA28 SA29 SA30
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20843-1E FLASH MEMORY CMOS 16M 2M x 8 BIT MBM29F017A-90/-12 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands
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DS05-20843-1E
MBM29F017A-90/-12
48-pin
40-pin
F9802
LCC-40P-M02
FPT-48P-M19
FPT-48P-M20
MBM29F017A
SA28
SA29
SA30
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FPT-48P-M19
Abstract: FPT-48P-M20 SA10 SA11 SA12
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20848-1E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29LL800T-15S/MBM29LL800B-15S • FEATURES • Voltage range (2.2 V to 2.7 V) for read, program and erase Minimizes system level power requirements
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DS05-20848-1E
8/512K
MBM29LL800T-15S/MBM29LL800B-15S
F9709
FPT-48P-M19
FPT-48P-M20
SA10
SA11
SA12
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MARKETING REQUIREMENTS DOCUMENT AE0.1E FLASH MEMORY CMOS 16M 2M x 8 BIT MBM29F017E 70/90/12 • FEATURES • 0.23 µm Process Technology • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands
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MBM29F017E
48-pin
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Untitled
Abstract: No abstract text available
Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
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F0212
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20862-8E FLASH MEMORY CMOS 4M 512K x 8/256K × 16 BIT MBM29LV400TC/BC-55/70/90 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands
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DS05-20862-8E
8/256K
MBM29LV400TC/BC-55/70/90
48-pin
44-pin
48-ball
F0309
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FPT-48P-M19
Abstract: FPT-48P-M20 mbm29f160be-70-90 20/MBM29F160TE/BE
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-6E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE70/90 MBM29F160BE70/90 • DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (1) package. The device is designed to be
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DS05-20879-6E
MBM29F160TE70/90
MBM29F160BE70/90
MBM29F160TE/BE
16M-bit,
48-pin
F0404
FPT-48P-M19
FPT-48P-M20
mbm29f160be-70-90
20/MBM29F160TE/BE
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transistor BC 55
Abstract: TR BC bc 163 FPT-48P-M19 FPT-48P-M20
Text: MBM29DL400TC/BC-55/70/90 Data Sheet Retired Product This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been
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MBM29DL400TC/BC-55/70/90
MBM29DL400TC/BC
DS05-20866-7E
F0403
ProductDS05-20866-7E
transistor BC 55
TR BC
bc 163
FPT-48P-M19
FPT-48P-M20
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY CMOS 16 M 2 M x 8 / 1 M x 16 BIT MBM29LV160T-90-12/MBM29LV16 OB-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
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MBM29LV160T-90-12/MBM29LV16
OB-90/-12
48-pin
46-pin
48-ball
6C-46P-M02)
46002S-4C
MBM29LV160T-90/-12/M
LV160
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20843-3E FLASH MEMORY CMOS 16M 2M X 8 BIT MBM29F017A-70/-90/-12 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash
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DS05-20843-3E
MBM29F017A-70/-90/-12
48-pin
40-pin
F48029S-2C-2
FPT-48P-M20)
F48030S-2C-2
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29F400TC
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20851-4E FLASH MEMORY B lB 4M 512K X 8/256K x 16 BIT MBM29F400TC-55/-70/-90/MBM29F400BC-55/-70A90
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DS05-20851-4E
8/256K
29F400TC-55/-70/-90/MBM29F400BC-55/-70A90
48-pin
44-pin
F48030S-2C-2
9F400TC-55/-70/-90/MBM29F40QBC-55/-70/-90
FPT-44P-M16)
F44023S-3C-3
29F400TC
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY B l I l i 4 M 512 K x 8 /256 K x 16 BIT M BM29 F400TA/BA-90-X/-12-x • FEATURES • •
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F400TA/BA-90-X/-12-x
48-pin
44-pin
F48030S-2C-2
F400TA/B
90-X/-12-x
44-LEAD
FPT-44P-M16)
F44023S-2C-2
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY CMOS X M B 800 E k ts s FEATURES Voltage range 2.2 V to 2.7 V for read, program and erase Minimizes system level power requirements Low power consumption 15 mA maximum active read current for Word Mode 10 mA maximum active read current for Byte Mode
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48-pin
46-pin
F9709
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29F200TC
Abstract: No abstract text available
Text: FLASH MEMORY CMOS 2M 256K x 8/128K x 16 BIT MBM29F200TC-55-70-90/MBM29F200BC-55/-70/-90 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
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8/128K
M29F200TC-55-70-90/MBM29F200BC-55/-70/-90
48-pin
44-pin
D-63303
F9811
29F200TC
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C0000-H
Abstract: 29LV160 29lv160 Flash
Text: FLASH MEMORY 16M 2M x 8/1M x 16 BIT CMOS MBM29LV160T-80-90-12/MBM29LV16 OB-8O/-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
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48-pin
46-pin
48-ball
F9904
C0000-H
29LV160
29lv160 Flash
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29LV400BC
Abstract: BC702
Text: FLASH MEMORY CMOS 4 M 512 K x 8/256K x 16 BIT MBM29LV400TC-70-90-12/MBM29LV400BC-70/-90/-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
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8/256K
9LV400TC-70-90-12/MBM29LV400BC-70/-90/-12
48-pin
44-pin
48-ball
D-63303
F9811
29LV400BC
BC702
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29F017A
Abstract: No abstract text available
Text: FLASH MEMORY CMOS 16M 2M x 8 BIT MBM29F017A-70'-90/-i2 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash
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MBM29F017A-70
-90/-i2
48-pin
40-pin
D-63303
F9811
29F017A
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