tp181
Abstract: toshiba hdd schematic board cbf 493 TP223 mt2 tEac CBF 423 diode ba39 toshiba 1,8 hdd schematic board TP182 keyboard and touchpad schematic
Text: 4-148 KBC3_SUSPWR 1% R11 10K 1% R18 6.65K P1.5V_AUX VDC C20 10nF TP192 TP193 R7 TP? 2.5V AL C6 330uF 7 6 5 TP194 Q57 SI4816DY IHLP-2525CZ-01 L1 4.7uH 25V C14 4700nF 3 8 2 D1 4 G2 1 G1 TP217 TP216 R1 1K TP196 25V C15 220nF TP191 5% TP190 R17 6.8K 1% R15 330K
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4700nF
TP197
TP208
TP198
220nF
ISL6225CA-T
TP199
tp181
toshiba hdd schematic board
cbf 493
TP223
mt2 tEac
CBF 423
diode ba39
toshiba 1,8 hdd schematic board
TP182
keyboard and touchpad schematic
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PDF
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smd TRANSISTOR 1702
Abstract: No abstract text available
Text: Preliminary PTF180901A High Power RF LDMOS Field Effect Transistor 90 W, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF180901A is a 90-watt, internally-matched GOLDMOS FET intended for EDGE applications in the DCS/PCS bands. Full gold metallization ensures excellent device lifetime and reliability.
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PTF180901A
PTF180901A
90-watt,
PTF180901A*
smd TRANSISTOR 1702
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PDF
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P220E
Abstract: infineon smd package
Text: PTF180901E PTF180901F Thermally-Enhanced High Power RF LDMOS FETs 90 W, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF180901E and PTF180901F are thermally-enhanced, internallymatched 90-watt GOLDMOS FETs intended for EDGE applications in the DCS/PCS bands. Thermally-enhanced packaging provides the coolest
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PTF180901E
PTF180901F
90-watt
P220E
infineon smd package
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PDF
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ssy 1920
Abstract: LM7805 SSY C5
Text: PTFA191001E PTFA191001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930 – 1990 MHz Description The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched GOLDMOS FETs intended for WCDMA, IS-95 and CDMA2000 applications. They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and
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Original
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PTFA191001E
PTFA191001F
100-watt,
IS-95
CDMA2000
PTFA191001F*
ssy 1920
LM7805
SSY C5
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PDF
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LM7805
Abstract: PTFA210301E
Text: PTFA210301E PTFA210301F Thermally-Enhanced High Power RF LDMOS FETs 30 W, 2110 – 2170 MHz Description The PTFA210301E and PTFA210301F are thermally-enhanced, 30-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are optimized for single- and two-carrier WCDMA
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Original
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PTFA210301E
PTFA210301F
30-watt,
PTFA210301F*
LM7805
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PDF
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200B
Abstract: BCP56 LM7805 PTFA211001E infineon gold P2KECT-ND
Text: PTFA211001E Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110 – 2170 MHz Description The PTFA211001E is a thermally-enhanced, 100-watt, internallymatched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from
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Original
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PTFA211001E
PTFA211001E
100-watt,
H-30248-2
200B
BCP56
LM7805
infineon gold
P2KECT-ND
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PDF
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A2103
Abstract: No abstract text available
Text: PTFA210301E PTFA210301F Thermally-Enhanced High Power RF LDMOS FETs 30 W, 2110 – 2170 MHz Description The PTFA210301E and PTFA210301F are thermally-enhanced, 30-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are optimized for single- and two-carrier WCDMA
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Original
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PTFA210301E
PTFA210301F
30-watt,
PTFA210301F*
A2103
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PDF
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d 417 transistor
Abstract: No abstract text available
Text: PTFA211001E PTFA211001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 2110 – 2170 MHz Description The PTFA211001E and PTFA211001F are thermally-enhanced, 100-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier
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Original
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PTFA211001E
PTFA211001F
100-watt,
PTFA211001F*
d 417 transistor
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PDF
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PTF082001E
Abstract: atc 1725 LM7805 smd smd transistor infineon 106T BCP56 PTF082001F 106T capacitor
Text: PTF082001E PTF082001F Thermally-Enhanced High Power RF LDMOS FETs 200 W, 860 – 900 MHz Description The PTF082001E and PTF082001F are 200-watt, internally-matched GOLDMOS FETs intended for CDMA and CDMA 2000 applications in the 860 to 900 MHz band. Thermally-enhanced packaging provides the coolest
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Original
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PTF082001E
PTF082001F
PTF082001E
PTF082001F
200-watt,
PTF082001F*
IS-95
17erous
atc 1725
LM7805 smd
smd transistor infineon
106T
BCP56
106T capacitor
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PDF
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marking us capacitor pf l1
Abstract: BCP56 LM7805 PTFA210301E infineon gold
Text: PTFA210301E Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110 – 2170 MHz Description The PTFA210301E is a thermally-enhanced, 30-watt, internally matched GOLDMOS FET intended for WCDMA applications. It is optimized for single- and two-carrier WCDMA operation from 2110
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Original
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PTFA210301E
PTFA210301E
30-watt,
marking us capacitor pf l1
BCP56
LM7805
infineon gold
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PDF
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ssy 1920
Abstract: LM7805
Text: PTFA191001E PTFA191001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930 – 1990 MHz Description The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched GOLDMOS FETs intended for WCDMA, IS-95 and CDMA2000 applications. They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and
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Original
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PTFA191001E
PTFA191001F
100-watt,
IS-95
CDMA2000
PTFA191001F*
ssy 1920
LM7805
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PDF
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SSY C5
Abstract: AN 5269
Text: DASH NO . -1 -2 -3 -4 -5 -6 w7 INCH MODEL NO .A D -PL3 0 -C 1 -PL3 0 AD-PL 30-C 2-PL 30 A D -PL30-C 3-PL30 A D - PL 3 0 - C 4 - P L3 0 AD-P L 3 0 - C 5 - P L 3 0 AD-P L 3 0 - C 6 - P L3 0 AD-P L 30-C7-PL30 SCHEM ! C1 C2 C3 C4 C5 C6 C7 MM .570 .14.48 2.096 53.24
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OCR Scan
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-PL30-C
3-PL30
30-C7-PL30
AD-PL30-CI/C2/C3/C4/
SSY C5
AN 5269
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PDF
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ISO r1101
Abstract: No abstract text available
Text: I PROOUCT N° I SEE SHEET 2 OF 2 . I I I I 1 I I ~l T 1_ 11 ftqd [ pos | ntxf m y dvg no I L ì 5,00 I ! ‘i I POS. 3 115.37 POSI ¡IGIELl P0S4 POS 2 1.FOR VISUAL. MECHANICAL ANO FUNCTIONAL REQUIREMENTS SEE PRODUCT SPEC BUS-12-003. 2.HOUSING MATL : A B S . MOULDING COMPOUNO.
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OCR Scan
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BUS-12-003.
C26000,
C51000
C26000
PLATED35433
R1101
Q006NS
ISO r1101
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PDF
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Untitled
Abstract: No abstract text available
Text: 10 3= t r i rm TaL NOTES: \m MATERIAL ''9 9 v ? : BUMS# . 7 X3E*. U L 9 4 V -0 HOUSINQ:HEAT RESISTANCE POLYMER,GLASS FILLED, UL94V-0 7 : ftsWIMi. # ? * * * . U L 94V -0 ACTUATOERiHEAT RESISTANCE POLYMER,GLASS FILLED,UL94V-0 ?-s±5i':Sfl-g-£ t=0.15 TERMINALiCOPPER ALLOY (t=0.15)
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OCR Scan
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UL94V-0
SD-501461-004
EN-02JA1021)
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PDF
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IC 555 for 2 way intercom
Abstract: tx 2b rx 2b S555B Audio Filters
Text: SPC 2350 Contents Page Section Title 3 1. 3 3 1.1. 1.2. Introduction Features Applications 4 4 2. 2.1. 2.2. 2.3. 2.4. 4 4 4 Functional Description Analog Input Multiplexer Analog Input Gain Analog Output Multiplexer Analog Output Attenuation Output Mute The INTERMETALL DFP Signal Processor
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PDF
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TA946
Abstract: TA-946
Text: r n PRODUCT NO. 95704-000 R .Ì MAX 95704-001 95704-002 • s S * a IT ¥ ï 36 REF. J * t 2 <h 1. l> *u % y 3 i*. £ * u " « ¥1 0-0 „ îf t 0± CO-PLANARITY PIN 1- - PIN 3 4 J u VIEW Y - Y 4 / 1 |_A_| SECTION , Z, - ’ Z,( t / l ) SMT STAGGERED (95704-001)
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OCR Scan
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TA-946
UL94V-0
MAX77
TA946
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PDF
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Untitled
Abstract: No abstract text available
Text: NO. *.0IS 99 3 IZ E 65399-00 i 65399-002 6 5 3990 03 653 99-004 65399-005 2 X 24 2 .5 8 0 2 X 2 0 2.180 1.7 a 0 2X16 2 X 1 5 1.680 2X12 1.380 A B C 2 .3 0 0 .09 1.900 1.500 1.400 1r ¡.¡0 0 MIN. .055 E E .14 .59 .33 .19 .3 9 .3 9 I '1 T MIN. S T Y L E TGOLO
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OCR Scan
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G5399
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PDF
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SSY C5
Abstract: 12S7
Text: LOC D IS T L 37 D R A W I N G M A D E IN T H I R D A N G L E P R O J E C T I O N R E V ISIO N S C o p y rig h t 1973 by AM P in c o rp o ra te d . H a rris b u rg . Pa . A l l In te rn a tio n a l R ights R e se rv e d . AM P In co rp o rated p ro d u cts
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PDF
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Untitled
Abstract: No abstract text available
Text: g L U / m iO t 'U llio - U U U * |W I A A SILICONE R U B B ER M/L-R-SQ4-T / 1 1 1: / I / / : QCB-\2Z'l-0001. JA1NER SLEEVE / 1 / / LEA D ED COPPER / 1 / -t<e:F u o rv i ;^ •£=»_ / 1 // s ea lin g s le e v e F,M. B R A S S PER QQ-B- bZQ> :ÛG3rO%\2rOO02. M ID D LE S L E E V E
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OCR Scan
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l-0001.
\2rOO02.
-OO02
I3Z-0//6-000*
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PDF
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T3D81
Abstract: SE090 A3CG pwa-5026 g33 mlf 3E090 RPS09 c621 ses Q603B TL931
Text: p. C 1 8 9 lOOGP ^ C219 1* C 2 1 1 •>. C 2 1 4 Z lO O O P 0 . 1 U /t n 1 0 0 U / 6 . 3 V 0603B I CP7243 C218 0.1U 0603B ■s, C 1 9 5 “ 1000P C 2 1 6 *0.1U 0603B C220 0.1U 0603B p n f Q - - 631 K 34 G3 5 •J3ÌS G33 F3 6 Fà4 E3 5 E33 D3 4 \ ""c7 T \
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OCR Scan
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1000P
0603B
0603B
CP7243
0805C
T3D81
SE090
A3CG
pwa-5026
g33 mlf
3E090
RPS09
c621 ses
Q603B
TL931
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PDF
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621618-2
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS DIST CF 39 LTR DESCRIPTION PER 0G80—101 6—04- lA CABLE, 30 AWG,34 TWISTED 5 CORE PAIRS, 90 o ^ 6q S E M ALL REMAINING
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OCR Scan
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0G80--101
07DEC04
31MAR2000
621618-2
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PDF
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Untitled
Abstract: No abstract text available
Text: — s— C Y M1 4 2 0 •¡¡¡ZÌ35SSS' mjm CYPRESS ~ SEMICONDUCTOR 128K x 8 Static RAM M odule Features Functional Description • High-density 1-megabit SRAM module • High-speed CMOS SRAMs — Access time of 20 ns The CYM1420 is a very high performance
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OCR Scan
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35SSS'
CYM1420
32-pin,
CYM1420PDâ
CYM1420HDâ
1420PD-35C
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PDF
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Untitled
Abstract: No abstract text available
Text: 42377 NO. OF CKTS. D IM . A 2 2 .54 (5 .0 8 (7 .6 2 .4 0 0 3. SOLDERABILITY ) (10.16) 4. P L A T IN G : (159) P R E P L A T E D (5 .0 8 (7 .62 5 6 7 8 .4 0 0 .5 0 0 (12.70) .5 0 0 .6 0 0 (12.70) (15.24) .6 0 0 .7 0 0 (15.24) (17.78) .7 0 0 .8 0 0 (17.78)
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OCR Scan
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-42377-072I
SPA-42377
S42377X4
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI ICs TV M51408SP PAL/NTSC SYSTEM SINGLE-CHIP COLOR TV SIGNAL PROCESSOR DESCRIPTION The M51408SP is a single-chip semiconductor integrated PIN CONFIGURATION (TOP VIEW) circuit with signal processing capabilities compatible with both PAL arid NTSC type color televisions.
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OCR Scan
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M51408SP
M51408SP
E41fl5b
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PDF
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