Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SSH25N35 Search Results

    SSH25N35 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SSH25N35 Unknown FET Data Book Scan PDF
    SSH25N35 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    SSH25N35 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    SSH25N35A Unknown FET Data Book Scan PDF
    SSH25N35A Unknown Shortform Datasheet & Cross References Data Short Form PDF

    SSH25N35 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SM25N

    Abstract: ssm25n40
    Text: SAMSUNG S E M I C ON DU CT OR INC . ‘ S S m I^ ^ Tfi’ DE | 7Tb414H DOOSBTB 4 ^ ^ ^ m ^N -C H A N N È L:^^ SSH25N35/25N40 POWER MOSFETS Preliminary Specifications 5 . PRODUCT SUMMARY 400 Volt, 0.25 Ohm SFET Part Number R D S on Id 350V ' 0.25 25A SSM25N40


    OCR Scan     		PDF 7Tb414H SSH25N35/25N40 SSM25N35 SSM25N40 SSH25N35 SSH25N40 SSM25N35/25N40 SM25N

    ci 648

    Abstract: SSH25N35 SSH25N40 250M
    Text: N-CHANNEL POWER MOSFETS SSH25N40/35 FEATURES • L o w e r R d s <o n • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF SSH25N40/35 SSH25N40 SSH25N35 ci 648 250M

    SSH60N06

    Abstract: IRFP141 IRFP142 IRFP143 Irfp250 irfp254 IRFP230 IRFP242 IRFP130 IRFP333 SSH40N15A
    Text: POWER MOSFETs FUNCTION GUIDE TO-3P N-CHANNEL BVdss V ID(onXA) RDS(onXG) Part Number 60.00 60.00 60.00 0.03 0.025 SSH60N06 SSH60N06A 80.00 12.00 14.00 25.00 28.00 34.00 40.00 0.23 0.16 0.10 0.077 0.080 0.055 IRFP133 IRFP131 IRFP143 IRFP141 IRFP153 IRFP151


    OCR Scan     		PDF SSH60N06 SSH60N06A IRFP133 IRFP131 IRFP143 IRFP141 IRFP153 IRFP151 IRFP132 IRFP130 IRFP142 Irfp250 irfp254 IRFP230 IRFP242 IRFP333 SSH40N15A

    ssh17n55

    Abstract: IRFP141 SSH40N20 SSH22N45 irfp250
    Text: MOSFETs FUNCTION GUIDE TO-3P N-CHANNEL Part Number IRFP141 IRFP151 BV d s s V lD(on)(A) Ros(on)(fl) R0jc(K/W) PD(Watt) Page 80 28.00 0.077 582 0.055 0.030 0.83 0.65 150 40.00 60.00 190 230 280 592 597 SSH60N08 SSH70N08 IHFP140 IRFP150 SSH60N10 SSH70N10 100


    OCR Scan     		PDF IRFP141 IRFP151 SSH60N08 SSH70N08 IHFP140 IRFP150 SSH60N10 SSH70N10 IRFP241 IRFP251 ssh17n55 SSH40N20 SSH22N45 irfp250

    SSH10N10

    Abstract: SSH10N06 SSH10N70A ssh25n35 SSH10N05 SSH10N08 SSH10N70 SSH8N15 SSH8N18 SSH8N20
    Text: - 310 - S € *± f ft A t Vd s £ Vg s ÍS 11 Ta=25^3 Pd Id Ig s s Vg s Idss th> or £ (V) 4# ti (Ta-25&#39;C) I d (on) D s(on ) Ciss g fs Coss Crss V g s -0 Vgs Vd g % % Vd s = (V) * /CH * /C H (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) (max) Id (mA)


    OCR Scan     		PDF SSH8N15 SSH8N18 SSH8N20 SSH8N55 SSH20N50A SSH25N35 SSH25N35A SSH25N40A SSH40N15 SSH40N15A SSH10N10 SSH10N06 SSH10N70A SSH10N05 SSH10N08 SSH10N70

    SSH22N35

    Abstract: SSH22N40 250M SSH25N35 SSH25N40
    Text: N-CHANNEL POWER MOSFETS SSH22N40/35 FEATURES • Lower R ds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF SSH22N40/35 SSH22N40 SSH22N35 250M SSH25N35 SSH25N40