Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SS 297 TRANSISTOR Search Results

    SS 297 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    SS 297 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ss 297 transistor

    Abstract: Q67000-S118 Q67000-S292
    Text: BSS 297 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Marking BSS 297 200 V 0.48 A 2Ω TO-92 SS 297 Type BSS 297 BSS 297 Ordering Code Q67000-S118


    Original     		PDF Q67000-S118 Q67000-S292 E6288 E6325 ss 297 transistor Q67000-S118 Q67000-S292

    ss 297 transistor

    Abstract: Q67000-S118 Q67000-S292
    Text: BSS 297 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Marking BSS 297 200 V 0.48 A 2Ω TO-92 SS 297 Type BSS 297 BSS 297 Ordering Code Q67000-S118


    Original     		PDF Q67000-S118 Q67000-S292 E6288 E6325 ss 297 transistor Q67000-S118 Q67000-S292

    HT121WX2-210

    Abstract: tablet display 10.1 WXGA FI-JT40S-HF10 THC63LVDM83A LCD 4 X 20 FI-JH40S-HF10 lcd monitor led stripe 40 pin led screen LVDS SMD Code WY
    Text: PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF HYDIS AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF HYDIS AND MUST BE RETURNED TO HYDIS UPON ITS REQUEST TITLE : HT121WX2-210 y Product Specification p Preliminary for Customer


    Original     		PDF HT121WX2-210 B2005-C001-C HT121WX2-210 tablet display 10.1 WXGA FI-JT40S-HF10 THC63LVDM83A LCD 4 X 20 FI-JH40S-HF10 lcd monitor led stripe 40 pin led screen LVDS SMD Code WY

    ss 297 transistor

    Abstract: Q62702-S616 sm 559 b* siemens bss 297 transistor transistor bss transistor Siemens sS 92
    Text: SIEMENS BSS 297 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 1 Pin 2 G Type ¡D 0.48 A BSS 297 VDS 200 V Type BSS 297 BSS 297 BSS 297 Ordering Code Q62702-S616 Q67000-S118 Q67000-S292 ^DS(on)


    OCR Scan     		PDF Q62702-S616 Q67000-S118 Q67000-S292 E6288 E6325 ss 297 transistor sm 559 b* siemens bss 297 transistor transistor bss transistor Siemens sS 92

    bss 97 transistor

    Abstract: ss 297 transistor
    Text: SIEMENS BSS 297 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • '/GS th = 0.8.2.0V Pin 1 Pin 2 G Type BSS 297 ^DS 200 V Type BSS 297 BSS 297 Ordering Code Q67000-S118 Q67000-S292 b 0.48 A ffDS<on) 2Q Pin 3 D Package


    OCR Scan     		PDF Q67000-S118 Q67000-S292 E6288 E6325 bss 97 transistor ss 297 transistor

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BSP 297 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type Vqs h BSP 297 200 V 0.65 A Type BSP 297 Ordering Code Q67000-S068 ^DS(on) Package Marking 2Q SOT-223 BSP 297 Tape and Reel Information


    OCR Scan     		PDF OT-223 Q67000-S068 E6327

    Untitled

    Abstract: No abstract text available
    Text: BSS 297 In fin e o n technologie* SIPMOS • Small-Signal Transistor • N channel • Enhancement mode • Logic Level 3 * ^ G S th VPT05548 = 0.8.2.0V Pin 1 Pin 2 G Type Vbs BSS 297 200 V Type BSS 297 BSS 297 Ordering Code Q67000-S118 Q67000-S292 0.48 A


    OCR Scan     		PDF VPT05548 Q67000-S118 Q67000-S292 E6288 E6325 S35bQ5 Q133777 SQT-89

    buz25

    Abstract: No abstract text available
    Text: PowerMOS transistor BUZ25 QbE D N AMER PHILIPS / D I S CR E T E bbS3T31 0014bDS S July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ25 bbS3T31 0014bDS T-39-11 BUZ25_ bb53131 0014blQ buz25

    Untitled

    Abstract: No abstract text available
    Text: 32E D • 053b32G 001b720 2 « S IP PNP Silicon AF Transistors _ S I E M E N S / • • • • • SPCL-, BCX 69 T ' 2 1 - 2 3 _ SEMICONDS For general AF applications High collector current High current gain Low collector-em ltter saturation voltage


    OCR Scan     		PDF 053b32G 001b720 Q62702-C1080 Q62702-C1081 Q62702-C1082 Q62702-C1867 Q62702-C1868 Q62702-C1869 BCX69

    Untitled

    Abstract: No abstract text available
    Text: BSP 318S In fin e o n technologies SIPMOS Small-Signal-Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 60 ^DS V ^bs on 0.09 n b 2.6


    OCR Scan     		PDF BSP318S OT-223 Q67000-S127 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    2SC373

    Abstract: transistor 2sc373 2sc372 transistor 2SC372 2SC372 2SC373 2SC372 transistor 2sc373 toshiba 2SA495 2SC37 NPN 2sc372
    Text: 2SC3 2 G 2 / U D > N P N Z t i ^ 5 / ? ;W B h 5 > 5 ;^ P C T S S C SILICON NPN EPITAXIAL TRANSISTOR ( PCT PROCES^^ 2S c 3 3 G O O a f t ! # « yf- INDUSTRIAL APPLICATIONS o H ig h Frequency A m p li fie r A p p lic a t io n s o H igh Speed S w itc h in g A p p lic a t io n s


    OCR Scan     		PDF 2SA495Â 2sc372Â 2sc373Â 2SC373 transistor 2sc373 2sc372 transistor 2SC372 2SC372 2SC373 2SC372 transistor 2sc373 toshiba 2SA495 2SC37 NPN 2sc372

    MICROWAVE ASSOCIATES

    Abstract: pa 3029 b Dielectric Resonator Oscillator DRO high power FET transistor s-parameters 2.5 GHz RF power transistors with s-parameters RF transistors with s-parameters 5218 chip ic TIP 298
    Text: M/A-C'OM' SEMICONDUCTOR _ci3 DE |St.45E] M □□00L30 S MA4F001 Series ¡88 Gallium Arsenide Field ^ Effect Transistors % S t su* mi IP I i Description a The MA4F001 series of gallium arsenide fieldeffect transistors (GaAs FETs) is a series of low power Schottky barrier gate devices with a 1


    OCR Scan     		PDF 00L30 MA4F001 4701B MA-4F001 MA-4F004 MA-4F600 MA-4F200 MA-4F300 MICROWAVE ASSOCIATES pa 3029 b Dielectric Resonator Oscillator DRO high power FET transistor s-parameters 2.5 GHz RF power transistors with s-parameters RF transistors with s-parameters 5218 chip ic TIP 298

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b^E D bbS3R31 ODBDhOO EOS H A P X Product Specification Philips Semiconductors BUK453-60A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in


    OCR Scan     		PDF bbS3R31 BUK453-60A/B O220AB BUK453 0030b04

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to


    OCR Scan     		PDF BU2525DX /PD25

    MA4F004

    Abstract: No abstract text available
    Text: Vv M/A-COM ADVANCED DE |st,4aifl3 ODDDDCH □ | ' 7 ' 3 / ' ^ 5 A ßm MA4F004 Series Gallium Arsenide Field Effect Transistor Description Features The MA4F004 series of gallium arsenide fieldeffect transistors GaAs FETs is a series of Schottky barrier devices with a 1 micron length X


    OCR Scan     		PDF MA4F004 Number4701B MA-4F001 MA-4F004 MA-4F600 MA-4F200 MA-4F300

    BUK453-60A

    Abstract: BUK453-60B T0220AB
    Text: PHILIPS INTERNATIONAL bSE D B 711065b □□bL4D3fc. 033 • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 711065b BUK453-60A/B T0220AB BUK453-60A BUK453-60B

    GEN 50

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK453-60A/B BUK453 T0220AB GEN 50

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
    Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8


    OCR Scan     		PDF 615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S

    8uk453

    Abstract: BUK453-60A BUK453-60B T0220AB
    Text: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 7110fi2b BUK453-60A/B T0220AB BUK453 8uk453 BUK453-60A BUK453-60B

    Untitled

    Abstract: No abstract text available
    Text: 30E D *57 6 S • T 'i S 'I S a ? G 031115 S C S -T H O M S O N H L U m *! 3 ■ 2 N 2 2 1 8 A -2 N 2 2 1 9 A 2 N 2 2 2 1 A -2 N 2 2 2 2 A S-THOMSON H IG H SP EE D SWITCHES DESC RIPTIO N The 2N2218A, 2N2219A, 2N2221A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec


    OCR Scan     		PDF 2N2218A, 2N2219A, 2N2221A 2N2222A 2N2218A 2N2219A) 2N2222A) 2N2218A/2N2219A 2N2221A/2N2222A

    BUK455

    Abstract: BUK455-600B BUK455-600A BUK455 600b T0220AB BUK455 600
    Text: N AMER P H I L I P S / D I S C R E T E 25E D • ^5 3 = 1 3 1 0 0 2D S1 5 1 ■ PowerMOS transistor BUK455-600A BUK455-600B r ^ 2 i-} 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF bb53T31 BUK455-600A BUK455-600B T-21-i3 BUK455 -600A -600B BUK455 600b T0220AB BUK455 600

    Untitled

    Abstract: No abstract text available
    Text: CS-298 2A Dual H-Bridge Driver D escription Features The emitters of the lower transistors of each bridge are connected together and the corresponding pins SENSE A/SENSE B can be connected to a sense resistor which, when used with an appropriate external circuit, can detect load faults or


    OCR Scan     		PDF CS-298 CS-298 CS-298M15 CS-298MV15

    TV RADIO IC siemens

    Abstract: PSB8593
    Text: S IE M E N S Dual-Tone Multi-Frequency Generator DTMF PSB 8593 CMOS 1C Type Ordering Code Package PSB 8593 Q 67100-H 8168 P-DIP-20 The DTMF generator PSB 8593 is specially designed to implement a dual-tone telephone dialing system. The device can be connected directly to a standard pushbutton keyboard


    OCR Scan     		PDF 67100-H P-DIP-20 TV RADIO IC siemens PSB8593

    ir5040

    Abstract: 2SC3143 100w amp sanyo pa 2030a A1257 SANYO SS 1001 2SA1257 103 7707 transistor s 2065 af
    Text: SA NY O S E M I C O N D U C T O R CORP SSE D 7 cic]7D7b 0 D 0 7 Q 4 S T 2SA1257, 2SC3143 T -2 7-09 PN P/N PN Epitaxial Planar Silicon Transistors 2 0 1 8A High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications 1057B F e a tu re s • V ery sm all-sized package p erm ittin g the 2SA1257/2SC3143-applied sets to be m ade sm all and slim


    OCR Scan     		PDF 7cH707fci 0D07042 2SA1257, 2SC3143 T-27-09 1057B 2SA1257/2SC3143-applied 2SA1257 ir5040 2SC3143 100w amp sanyo pa 2030a A1257 SANYO SS 1001 103 7707 transistor s 2065 af