Untitled
Abstract: No abstract text available
Text: PF873-03 SRM20W117LLTT/SLTT2/7 1M-Bit Static RAM e g olta wV r Loon e p Su erati ts Op oduc Pr ●Super Low Voltage Operation and Low Current Consumption ●Access Time 120ns 1.8V / 70ns (2.7V) ●65,536 WordsX16-Bit Asynchtonous ●Wide Temperature Range
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Original
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PF873-03
SRM20W117LLTT/SLTT2/7
120ns
WordsX16-Bit
SRM20W117LLTX/SLTX2/7
16-bit
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PDF
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PF869-03
Abstract: No abstract text available
Text: PF869-03 SRM20W116LLTT2/7 1M-Bit Static RAM ge olta wV r Lo n e p Su eratio Op ducts Pro ● Super Low Voltage Operation and Low Current Consumption ● Access Time 120ns 1.8V / 70ns(2.7V) ● 65,536 Words X16-Bit Asynchtonous ● Wide Temperature Range • DESCRIPTION
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Original
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PF869-03
SRM20W116LLTT2/7
120ns
X16-Bit
SRM20W116LLTT2/7
PF869-03
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PDF
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Untitled
Abstract: No abstract text available
Text: PF867-03 SRM20W116LLTX2/7 1M-Bit Static RAM age ●Super Low Voltage Operation and Low Current Consumption ●Access Time 120ns 1.8V / 70ns (2.7V) ●65,536 WordsX16-Bit Asynchtonous ●Wide Temperature Range Volt ow L r e Sup eration Op ducts Pro • DESCRIPTION
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Original
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PF867-03
SRM20W116LLTX2/7
120ns
WordsX16-Bit
SRM20W116LLTX2/7
16-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: SRM20W116LLTT2/7 1M-BIT STATIC RAM ● ● ● ● Super Low Voltage Operation and Low Current Consumption Access Time 120ns 1.8V /70ns (2.7V) 65,536 Words x 16-Bit Asynchronous Industrial Temperature Range • DESCRIPTION The SRM20W116LLTT2/7 is a 65,536 words x 16-bit asynchronous, random access memory on a
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Original
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SRM20W116LLTT2/7
120ns
/70ns
16-Bit
SRM20W116LLTT2/7
-44pin-R1
81max
740max)
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PDF
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Untitled
Abstract: No abstract text available
Text: PF873-03 SRM20W117LLTX/SLTX2/7 1M-Bit Static RAM e ltag Vo Lown r e Sup eratio ts Op oduc Pr ● Super Low Voltage Operation and Low Current Consumption ● Access Time 120ns 1.8V / 70ns (2.7V) ● 65,536 WordsX16-Bit Asynchtonous ● Wide Temperature Range
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Original
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PF873-03
SRM20W117LLTX/SLTX2/7
120ns
WordsX16-Bit
SRM20W117LLTX/SLTX2/7
16-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: SRM20W116LLTX2/7 1M-BIT STATIC RAM ● ● ● ● Super Low Voltage Operation and Low Current Consumption Access Time 120ns 1.8V /70ns (2.7V) 65,536 Words x 16-Bit Asynchronous Wide Temperature Range • DESCRIPTION The SRM20W116LLTX2/7 is a 65,536 words x 16-bit asychronous, random access memory on a
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Original
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SRM20W116LLTX2/7
120ns
/70ns
16-Bit
SRM20W116LLTX2/7
-44pin-R1
81max
740max)
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PDF
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Untitled
Abstract: No abstract text available
Text: PF947-01 SRM20W117LLTT/SLTT2/7 1M-Bit Static RAM e ltag Vo Lown r e Sup eratio ts Op oduc Pr ● Super Low Voltage Operation and Low Current Consumption ● Access Time 120ns 1.8V / 70ns (2.7V) ● 65,536 Words x16-bit Asynchtonous ● Wide Temperature Range
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Original
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PF947-01
SRM20W117LLTT/SLTT2/7
120ns
x16-bit
SRM20W117LLTT/SLTT2/7
16-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: PF873-03 SRM20W117LLTX/SLTX2/7 1M-Bit Static RAM e g olta wV r Loon e p Su erati ts Op oduc Pr ●Super Low Voltage Operation and Low Current Consumption ●Access Time 120ns 1.8V / 70ns (2.7V) ●65,536 WordsX16-Bit Asynchtonous ●Wide Temperature Range
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Original
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PF873-03
SRM20W117LLTX/SLTX2/7
120ns
WordsX16-Bit
SRM20W117LLTX/SLTX2/7
16-bit
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PDF
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upd444c
Abstract: SRM2016C12 SRM2264LC10 SRM2264lm10 SRM2B256SLMX55 SRM20100LRMT85 SRM2016C-12 SRM2016C SRM2264LCT10 SRM20100LMT
Text: 1997 DATABOOK SRAM PRODUCTS 000-97-MEM-1.0 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: 408 922-0200 • Fax: (408) 922-0238 1 THIS PAGE INTENTIONALLY BLANK 2 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: (408) 922-0200 • Fax: (408) 922-0238
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Original
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000-97-MEM-1
SRM2016C10/12
16K-Bit
SRM2016C/MT12
SRM2264L10/12
64K-Bit
-44pin-R1
81max
upd444c
SRM2016C12
SRM2264LC10
SRM2264lm10
SRM2B256SLMX55
SRM20100LRMT85
SRM2016C-12
SRM2016C
SRM2264LCT10
SRM20100LMT
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PDF
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Untitled
Abstract: No abstract text available
Text: EPSON PF873-03 SRM20W117LLTX/SLTX2/7 1 M-Bit Static RAM 1S u pe r Low Voltage O peration and Low C urrent C onsum ption 1A ccess Tim e 12 0ns 1 .8V / 70ns (2.7V) 165,536 W o rd sX I 6-B it A synchtonous 1W ide T em perature Range I DESCRIPTION The S R M 20W 117LLTX/SLTX2/7 is a 65,536 w ords x 16-bit asynchronous, random access m em ory on a m onolithic
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OCR Scan
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PF873-03
SRM20W117LLTX/SLTX2/7
117LLTX/SLTX2/7
16-bit
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PDF
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SRM20W116LLTT2
Abstract: SRM20W116LLTT7
Text: EPSON PF869-03 SRM20W116 LLTT2/7 1M-Bit Static RAM • • • • Super Low Voltage Operation and Low Current Consumption Access Time 120ns 1.8V / 70ns(2.7V) 65,536 Words X16-Bit Asynchtonous Wide Temperature Range DESCRIPTION The SRM20W116LLTT2/7 is a 65,536 words x16-bit asynchronous, random access memory on a monolithic
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OCR Scan
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PF869-03
SRM20W116LLTT2/7
120ns
X16-Bit
SRM20W116LLTT2/7
-44pin
740ma>
125toos
SRM20W116LLTT2
SRM20W116LLTT7
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PDF
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Untitled
Abstract: No abstract text available
Text: SRM20W116LLTT2/7 1M-BIT STATIC RAM • • Super Low Voltage Operation and Low Current Consum ption • Access Tim e 120ns 1.8V /70ns (2.7V) • 65,536 W ords x 16-Bit Asynchronous • Industrial Tem perature Range DESCRIPTION The SRM20W 116LLTT2/7 is a 65,536 words x 16-bit asynchronous, random access m em ory on a
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OCR Scan
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SRM20W116LLTT2/7
120ns
/70ns
16-Bit
SRM20W
116LLTT2/7
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PDF
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Untitled
Abstract: No abstract text available
Text: EPSON PF947-01 SRM20W117LLTT/SLTT2/7 1 M-Bit Static RAM i Super Low Voltage Operation and Low Current Consumption i Access Time 120ns 1.8V / 70ns (2.7V) i 65,536 Words x16-bit Asynchtonous i Wide Temperature Range I DESCRIPTION The SRM20W117LLTT/SLTT2/7 is a 65,536 words x 16-bit asynchronous, random access memory on a monolithic
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OCR Scan
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PF947-01
SRM20W117LLTT/SLTT2/7
120ns
x16-bit
SRM20W117LLTT/SLTT2/7
16-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: PF867-01 EPSON SRM20W116 LLTX2/7 1 M-Bit Static RAM •S u p e r Low Voltage Operation and Low Current Consumption •A c c e s s Time 120ns 1.8V / 70ns (2.7V) •6 5 ,5 3 6 W ordsXI 6-Bit Asynchtonous •W id e Temperature Range I DESCRIPTION The SRM 20W 11 6 LLTX 2/7 is a 65,536 words x 16-bit asynchronous, random access memory on a monolithic
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OCR Scan
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PF867-01
SRM20W116
120ns
16-bit
SRM20W116LLTX2/7
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PDF
|
|
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Untitled
Abstract: No abstract text available
Text: SRM20W116LLTX2/7 1M-BIT STATIC RAM • • Super Low Voltage Operation and Low Current Consum ption • Access Tim e 120ns 1.8V /70ns (2.7V) • 65,536 W ords x 16-Bit Asynchronous • W ide Tem perature Range DESCRIPTION The SRM20W116LLTX2/7 is a 65,536 w ords x 16-bit asychronous, random access m em ory on a
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OCR Scan
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SRM20W116LLTX2/7
120ns
/70ns
16-Bit
SRM20W116LLTX2/7
SRM20W
116LLTX2/7
-44pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: EPSON PF869-01 SRM20W116 LLTT2/7 1M-Bit Static RAM •S u p e r Low Voltage Operation and Low Current Consumption •A c c e s s Time 120ns 1.8V / 70ns(2.7V) •6 5 ,5 3 6 Words X16-Bit Asynchtonous •W id e Temperature Range I DESCRIPTION The SR M 20W 1 16 LLTT 2/7 is a 65,536 words x16-bit asynchronous, random access memory on a monolithic
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OCR Scan
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PF869-01
SRM20W116
120ns
X16-Bit
SRM20W116LLTT2/7
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PDF
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UPD444C
Abstract: SRM2264LC10 hm6116 SRM2264LCT10
Text: Short Form Matrix Static Memory Line-Up The static nature of the memory requires no external clock or refreshing circuit and its very low power consumption makes it ideal for applications requiring non-volatile storage with back-up batteries. S-MOS Systems, Inc. •150 RlverOaks Parkway • San Jose, CA 95134 *Tel: 408 922-0200 • Fax: (408) 922-0238
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OCR Scan
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DIP-24pin
OP2-24pin
DIP-24pln
OP-24pin
DIP-28pin
OP-28pin
UPD444C
SRM2264LC10
hm6116
SRM2264LCT10
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PDF
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SRM2A256SLC
Abstract: SRM20100LLM srm2264lct SRM2A256LLCT SRM20100LL SRM2264LC SRM2564C SRM20100LMT tl512 SRM20116
Text: Section 4 Memories SRM2264LC SRM2264LCT 64K 8KX8 Access tim e ns Part number Capacity(bits) Organization(bits) - SRM2464MT* 'K K K SRM2564C >r S afe RAM — I 32KX9 K 7 0 /8 5 /1 0 0 •SRM2A256LLMX 7 0 /8 5 /1 0 0 i SRM2A256LLCT 85/100 ■SRM2B256SLMX 5 5 /7 0 /1 0 0
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OCR Scan
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SRM2264LC
SRM2264LCT
SRM2464MT*
SRM2564C
SRM2A256SLC
SRM2A256LLMX
SRM2A256LLCT
SRM2B256SLMX
32KX8
SRM2B256SLMT
SRM2A256SLC
SRM20100LLM
srm2264lct
SRM2A256LLCT
SRM20100LL
SRM2564C
SRM20100LMT
tl512
SRM20116
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PDF
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DIP28pin
Abstract: sop6
Text: Memories S tatic H A M s CMOS Static RAMs Wide temperature operation: —25 to +85°C P a rt n u m b e r C a p a c ity O ^ a r t a t o n Power s u p p ly (V ) C urre n t consum ption Operating S tandby (mA, Max.) i ^ A , Max.) Am bient te n $ d ra lu re
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OCR Scan
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SRM2A256LLMX70
SRM2A256LLMX85
SRM2A256LLMX10
SRM2A1256LLMT
DIP-28pin,
OP2-28pin,
-28pin
-28pin-R1
-28pin,
DIP28pin
sop6
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PDF
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SRM2B256SLMX55
Abstract: SRM2016C
Text: Table of Contents Table of Contents SRAM Products Short Form M atrix. 5 SRM2016C10/12.16K-Bit Static RAM. 7 SRM2016C/MT12.16K-Bit Static
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OCR Scan
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SRM2016C10/12.
16K-Bit
SRM2016C/MT12.
SRM2264L10
64K-Bit
SRM2264LCT10/12.
SRM2B256SLMX55/70/10.
256K-Bit
SRM2B256SLMX55
SRM2016C
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PDF
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