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    SRAM IP Search Results

    SRAM IP Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    R1LV0408DSP-7LR#S0 Renesas Electronics Corporation Low Power SRAM Visit Renesas Electronics Corporation
    R1WV3216RBG-7SR#S0 Renesas Electronics Corporation Low Power SRAM Visit Renesas Electronics Corporation
    R1LV0816ASD-5SI#S0 Renesas Electronics Corporation Low Power SRAM Visit Renesas Electronics Corporation
    R1LV0408DSP-5SR#S0 Renesas Electronics Corporation Low Power SRAM Visit Renesas Electronics Corporation
    7MP4060-000 Renesas Electronics Corporation SRAM MODULE Visit Renesas Electronics Corporation
    7MP4093-000 Renesas Electronics Corporation SRAM MODULE Visit Renesas Electronics Corporation

    SRAM IP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    28F3202C3

    Abstract: 29066
    Text: PRODUCT PREVIEW 3 VOLT ADVANCED+ STACKED CHIP SCALE PACKAGE MEMORY 16-Mbit Flash + 2-Mbit SRAM - 28F1602C3 16-Mbit Flash + 4-Mbit SRAM - 28F1604C3 32-Mbit Flash + 4-Mbit SRAM - 28F3204C3 32-Mbit Flash + 2-Mbit SRAM - 28F3202C3 ! Flash Memory Plus SRAM


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    PDF 16-Mbit 28F1602C3 32-Mbit 28F3204C3 28F1604C3 28F3202C3 16-Mb 32-Mb 28F3202C3 29066

    TCAM

    Abstract: nP3400 PB3450 nP3450 amcc np3400
    Text: nP3450 Advanced Product Brief 4.4Gbps Integrated Network Processor and Traffic Manager PB3450 / V0.3 / 04/24/2003 • Switched Ethernet Platforms • Ethernet Over SONET/SDH • CPE Equipments, MTU/MDU SRAM SRAM SRAM SRAM/ TCAM Applications Features 24 FE


    Original
    PDF nP3450 PB3450 nP3450 nP3400 nP3400 nP3400. OC-192 TCAM amcc np3400

    tcam

    Abstract: MPLS nP3450 NP3454 nP3400 amcc np3400 np3404
    Text: nP3454 Advanced Product Brief PB3454 / V0.3 / 04/24/2003 4.4Gbps Integrated Network Processor and Traffic Manager SRAM SRAM SRAM SRAM/ TCAM Applications • Switched Ethernet Platforms • Ethernet Over SONET/SDH • CPE Equipments, MTU/MDU Features 2 GE nP3454


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    PDF nP3454 PB3454 nP3454 nP3404 nP3404 nP3404. tcam MPLS nP3450 nP3400 amcc np3400

    AG29

    Abstract: ipug45_01.5 transistor w1d transistor w4B SRAM SAMSUNG FC1152 3ah22
    Text: ispLever CORE TM QDRII+ SRAM Controller MACO Core User’s Guide June 2008 ipug45_01.5 QDRII+ SRAM Controller MACO Core User’s Guide Lattice Semiconductor Introduction Lattice’s QDRII and QDRII+ QDRII/II+ SRAM Controller MACO core assists the FPGA designer’s efforts by


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    PDF ipug45 AG29 ipug45_01.5 transistor w1d transistor w4B SRAM SAMSUNG FC1152 3ah22

    Untitled

    Abstract: No abstract text available
    Text: LatticeMico Asynchronous SRAM Controller The LatticeMico asynchronous SRAM controller is a slave device for the WISHBONE architecture. It interfaces to an industry-standard asynchronous SRAM device. Version This document describes the 3.2 version of the LatticeMico asynchronous


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    PDF 32-bit

    ISSI Signs SRAM Technology Licensing Agreement with IBM

    Abstract: Licensing Agreement with IBM
    Text: ISSI Signs SRAM Technology Licensing Agreement with IBM SAN JOSE, Calif., Feb. 27, 2012 - ISSI has signed a technology licensing agreement with IBM around SRAM technology, enhancing a relationship that started in 2004 for SRAM technology. Said Tom Reeves, VP of Business Development and Licensing, at IBM: "IBM has a rich and extensive IP portfolio in


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    Untitled

    Abstract: No abstract text available
    Text: Rev 2; 5/06 DS2045W 3.3V Single-Piece 1Mb Nonvolatile SRAM The DS2045W is a 1Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in


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    PDF DS2045W 256-ball DS2045W

    Untitled

    Abstract: No abstract text available
    Text: Rev 1; 5/06 DS2065W 3.3V Single-Piece 8Mb Nonvolatile SRAM The DS2065W is a 8Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in


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    PDF DS2065W 256-ball DS2065W

    DS2045AB

    Abstract: DS2045AB-100 DS2045AB-70 DS2045Y DS2045Y-100 DS2045Y-70 DS80C390 DS2045
    Text: Rev 0; 10/04 DS2045Y/AB Rechargeable 1M Nonvolatile SRAM Features The DS2045 is a 1Mb rechargeable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in


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    PDF DS2045Y/AB DS2045 256-ball 045Y/AB DS2045AB DS2045AB-100 DS2045AB-70 DS2045Y DS2045Y-100 DS2045Y-70 DS80C390

    DS1270W

    Abstract: No abstract text available
    Text: Rev 0; 8/06 3.3V Single-Piece 16Mb Nonvolatile SRAM Features The DS2070W is a 16Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in


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    PDF DS2070W 256-ball microA19 DS2070W DS1270W

    qdrii sram

    Abstract: No abstract text available
    Text: QDRII SRAM Controller MegaCore Function Errata Sheet December 2006, MegaCore Version 6.1 This document addresses known errata and documentation issues for the QDRII SRAM Controller MegaCore function version 6.1. Errata are functional defects or errors, which may cause the QDRII SRAM


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    Untitled

    Abstract: No abstract text available
    Text: Rev 2; 5/06 DS2045L 3.3V Single-Piece 1Mb Nonvolatile SRAM The DS2045L is a 1Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in


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    PDF DS2045L 256-ball DS2045L

    DS1270W

    Abstract: DS2070W-100 DS2070W
    Text: Rev 0; 8/06 3.3V Single-Piece 16Mb Nonvolatile SRAM Features The DS2070W is a 16Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in


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    PDF DS2070W 256-ball DS2070W DS1270W DS2070W-100

    ModelSim

    Abstract: No abstract text available
    Text: QDRII SRAM Controller MegaCore Function Errata Sheet June 2007, MegaCore Version 7.1 This document addresses known errata and documentation issues for the QDRII SRAM Controller MegaCore function version 7.1. Errata are functional defects or errors, which may cause the QDRII SRAM


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    ic 4082 16 pins

    Abstract: ic 4082 ic 4082 and pin configuration
    Text: IP X fd t Integrated Ete1i'ice Technology, Inc. Inf7MBV4150 128K x 64/256K x 72 SYNC HR ON OUS PIPELINED BU RST SRAM 256K x 72 BU RST Z B T SRAM MODULE FAMILY IDT7MBV4151 IDT7MBV4152 FEATURES: DESCRIPTION: • Pin compatible module family for pipelined burst SRAM and


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    PDF 64/256K Inf7MBV4150 IDT7MBV4151 IDT7MBV4152 160-lead 66MHz, IDT7MBV4150/51/52 BV4150 7MBV4151 ic 4082 16 pins ic 4082 ic 4082 and pin configuration

    Untitled

    Abstract: No abstract text available
    Text: 8 Megabit Flash + 2 Megabit SRAM ComboMemory SST32LH802 Advance Inform ation FEATURES: • Organized as 512 K x16 Flash + 128Kx16 SRAM or 512K x8 x2 Flash + 128K x8 x2 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation - Read from or write to SRAM while erase/


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    PDF SST32LH802 128Kx16 SST32LH802

    jmicron

    Abstract: MT58C1
    Text: SSE D MICRON TECHNOLOGY INC IC R O N • b l l i s m 0005^53 LIT 16K X IPIRN MT58C1616 DIE 16 SYNCHRONOUS SRAM -T MILITARY SRAM DIE 16Kx 16 SRAM WITH CLOCKED, REGISTERED INPUTS FEATURES • • • • • • • • Fast access times: 20,25 and 35ns


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    PDF MT58C1616 jmicron MT58C1

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TH50VSF1302/1303AAXB TOSHIBA MULTI CHIP INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI CHIP PACKAGE DESCRIPTION The TH50VSF1302/1303AAXB is a package of mixed 2,097,152-bit SRAM and 8,388,608-bit FLASH memory. The SRAM and FLASH memory organized 262,144 words by 8 bits SRAM and 1,048,576


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    PDF TH50VSF1302/1303AAXB TH50VSF1302/1303AAXB 152-bit 608-bit 48-pin

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TH 50VSF1320/1321AAXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI CHIP PACKAGE DESCRIPTION The TH50VSF1320/1321AAXB is a package of mixed 2,097,152-bit SRAM and 8,388,608-bit FLASH memory. The SRAM and FLASH memory organized 262,144 words by 8 bits SRAM and 1,048,576


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    PDF 50VSF1320/1321AAXB TH50VSF1320/1321AAXB 152-bit 608-bit 48-pin TH50VSF1320/1321

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC SSE ]> b i l l i g 0004GGS ¿OI MICRON 256K X IPIRN MT8S25632 32 SRAM MODULE - ' " P J t - i ' 5 - 1 4 SRAM MODULE 256K X 32 SRAM FEATURES • High speed: 15*, 20,25 and 35ns • High-density 1MB design • High-performance, low-power, CMOS double-metal


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    PDF 0004GGS MT8S25632 64-Pin MT6S2S632

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TH 50VSF1 3 2 0 /1 3 2 1AAXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI CHIP PACKAGE DESCRIPTION The TH50VSF1320/1321AAXB is a package of mixed 2,097,152-bit SRAM and 8,388,608-bit FLASH memory. The SRAM and FLASH memory organized 262,144 words by 8 bits SRAM and 1,048,576


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    PDF 50VSF1 TH50VSF1320/1321AAXB 152-bit 608-bit 48-pin TH50VSF1320/1321A

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification 320 macroceil SRAM CPLD PZ3320C/PZ3320N FEATURES DESCRIPTION • 320 macrocell SRAM based CPLD The PZ3320 device is a member of the CoolRunner family of high-density SRAM-based CPLDs Complex Programmable Logic


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    PDF PZ3320C/PZ3320N 1-888-CoolPLD PZ3320

    MTSC1008

    Abstract: micron sram DDD347D MT5C1008 MT5C1008DJ-25 5A143 MT5C100B IA15I 81A12
    Text: MICRON TE C H N O L O G Y INC M I C R O t i l l 5 in Q 0 034b4 Oñb SSE » MT5C1008 128K X 8 SRAM N SRAM 128K x 8 SRAM 5 VOLT SRAM WITH OUTPUT ENABLE FEATURES • High speed: 12*, 15*, 17,20,25,35 and 45ns • High-performance, low-power, CMOS double-metal


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    PDF MT5C1008 G003M71 MTSC1008 micron sram DDD347D MT5C1008DJ-25 5A143 MT5C100B IA15I 81A12

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MT58LC64K32D9 64KX 32 SYNCBURST SRAM MICRON • lfcCHNOlOGY. INC. 64K x 32 SRAM + 3 .3 V S U P P L Y , P IP E L IN E D , S IN G L E -C Y C L E D ES ELEC T AND SELECTABLE BURST M O DE NEW SYNCHRONOUS SRAM FEATURES • • • • • • • •


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    PDF MT58LC64K32D9