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    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC SSE ]> b i l l i g 0004GGS ¿OI MICRON 256K X IPIRN MT8S25632 32 SRAM MODULE - ' " P J t - i ' 5 - 1 4 SRAM MODULE 256K X 32 SRAM FEATURES • High speed: 15*, 20,25 and 35ns • High-density 1MB design • High-performance, low-power, CMOS double-metal


    OCR Scan     		0004GGS MT8S25632 64-Pin MT6S2S632 PDF

    marking wp1

    Abstract: MTBS25632
    Text: MT8S25632 2 5 6 K X 32 S R A M M O D U L E I^ IIC IR a íM SRAM MODULE 256K x 32 SRAM FEATURES • High speed: 15, 20 and 25ns • High-density 1MB design • High-performance, low-power, CMOS double-metal process _ • Single +5V ±10% power supply • Easy memory expansion with CE and OE functions


    OCR Scan     		MT8S25632 64-Pin MTBS25632 MT9S25632 marking wp1 PDF