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    SRAM 5V 512K X 8 Search Results

    SRAM 5V 512K X 8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7M4048L70N Renesas Electronics Corporation 512K X 8 SRAM MODULE Visit Renesas Electronics Corporation
    7M4048L100N Renesas Electronics Corporation 512K X 8 SRAM MODULE Visit Renesas Electronics Corporation
    7M4048L85N Renesas Electronics Corporation 512K X 8 SRAM MODULE Visit Renesas Electronics Corporation
    7M4048S35CB Renesas Electronics Corporation 512K X 8 SRAM MODULE Visit Renesas Electronics Corporation
    7M4048L120N Renesas Electronics Corporation 512K X 8 SRAM MODULE Visit Renesas Electronics Corporation

    SRAM 5V 512K X 8 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: LP614096-I Series 512K X 8 BIT 5V HIGH SPEED CMOS SRAM Preliminary Document Title 512K X 8 BIT 5V HIGH SPEED CMOS SRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue January 7, 2009 Preliminary January, 2009, Version 0.0


    Original     		LP614096-I LP614096-10IF 36-pin 44-pin LP614096-25LIF PDF

    HMS51232M4G

    Abstract: simm 72 pinout
    Text: HANBit HMS51232M4G SRAM MODULE 2Mbyte 512K x 32-Bit , 72PIN SIMM, 5V Part No. HMS51232M4G GENERAL DESCRIPTION The HMS51232M4GG is a high-speed static random access memory (SRAM) module containing 1,048,576 words organized in a x32-bit configuration. The module consists of four 512K x 8 SRAMs mounted on a 72-pin, single-sided, FR4-printed circuit board.


    Original     		HMS51232M4G 32-Bit) 72PIN HMS51232M4GG x32-bit 72-pin, 51232M4G-10 32bit HMS51232M4G simm 72 pinout PDF

    Untitled

    Abstract: No abstract text available
    Text: M48T513Y M48T513V 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM PRELIMINARY DATA INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL YEAR 2000 COMPLIANT-CENTURY REGISTER BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS


    Original     		M48T513Y M48T513V M48T513Y: M48T513V: PDF

    5962-94611

    Abstract: No abstract text available
    Text: SRAM AS8S512K32 & AS8S512K32A Austin Semiconductor, Inc. 512K x 32 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS NC A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc Operation with single 5V supply High speed: 12, 15, 17, 20, 25 and 35ns


    Original     		AS8S512K32 AS8S512K32A MIL-STD-883 512Kx32 -55oC 125oC) -40oCHMC 5962-9461112HMA 5962-9461112HMC 5962-9461111HMA 5962-94611 PDF

    54321

    Abstract: 5962-9461109HMX 5962-9461107HMX 702 smd AS8S512K32 AS8S512K32A 5962-9461110 5962-9461108HTA
    Text: SRAM AS8S512K32 & AS8S512K32A Austin Semiconductor, Inc. 512K x 32 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS NC A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc Operation with single 5V supply High speed: 12, 15, 17, 20, 25 and 35ns


    Original     		AS8S512K32 AS8S512K32A 512Kx32 -35Part AS8S512K32Q1-12L/Q AS8S512K32Q1-15L/Q AS8S512K32Q1-17L/Q AS8S512K32Q1-20L/Q AS8S512K32Q1-25L/Q AS8S512K32Q1-35L/Q 54321 5962-9461109HMX 5962-9461107HMX 702 smd AS8S512K32 AS8S512K32A 5962-9461110 5962-9461108HTA PDF

    Untitled

    Abstract: No abstract text available
    Text: SRAM AS8S512K32 & AS8S512K32A Austin Semiconductor, Inc. 512K x 32 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS NC A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc Operation with single 5V supply High speed: 12, 15, 17, 20, 25 and 35ns


    Original     		AS8S512K32 AS8S512K32A MIL-STD-883 512Kx32 -55oC 125oC) -40oCHMC 5962-9461112HMA 5962-9461112HMC 5962-9461111HMA PDF

    CE5 marking

    Abstract: HMS1M32M8LA 72PIN-SIMM
    Text: HANBit HMS1M32M8LA SRAM MODULE 4Mbyte 1Mx32Bit ,LOW POWER,72Pin SIMM,5V Part No. HMS1M32M8LA GENERAL DESCRIPTION The HMS1M32M8LA is a static random access memory (SRAM) module containing 1,048,576 bits organized in a x32-bit configuration. The module consists of eight 512K x 8 SRAMs mounted on a 72-pin, double-sided, FR4-printed circuit board.


    Original     		HMS1M32M8LA 1Mx32Bit) 72Pin HMS1M32M8LA x32-bit 72-pin, HMS1M32M8LA-55 CE5 marking 72PIN-SIMM PDF

    HMS1M32M8L

    Abstract: HMS1M32Z8L 1mx32bit
    Text: HANBit HMS1M32M8L SRAM MODULE 4Mbyte 1Mx32Bit ,LOW POWER,72Pin SIMM,5V Part No. HMS1M32M8L, HMS1M32Z8L GENERAL DESCRIPTION The HMS1M32M8L is a static random access memory (SRAM) module containing 1,048,576 bits organized in a x32-bit configuration. The module consists of eight 512K x 8 SRAMs mounted on a 72-pin, double-sided, FR4-printed circuit board.


    Original     		HMS1M32M8L 1Mx32Bit) 72Pin HMS1M32M8L, HMS1M32Z8L HMS1M32M8L x32-bit 72-pin, HMS1M32Z8L 1mx32bit PDF

    bipolar transistor tester

    Abstract: WS512K8-XCX
    Text: White Electronic Designs WS512K8-XCX 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES Access Times 20, 25, 35, 45ns Organized as 512K x 8 Standard Microcircuit Drawing, 5962-92078 5V Power Supply MIL-STD-883 Compliant Devices Available Low Power CMOS Rad Tolerant Devices Available


    Original     		WS512K8-XCX 512Kx8 MIL-STD-883 A0-18 06HTX 07HTX 08HTX 09HTX bipolar transistor tester WS512K8-XCX PDF

    5962-9461109HMX

    Abstract: No abstract text available
    Text: SRAM Austin Semiconductor, Inc. 512K x 32 SRAM SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 GND I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 Operation with single 5V supply High speed: 12, 15, 17, 20, 25 and 35ns


    Original     		AS8S512K32 AS8S512K32A MIL-STD-883 512Kx32 -55oC 125oC) AS8S512K32Q1-12L/Q AS8S512K32Q1-15L/Q AS8S512K32Q1-17L/Q AS8S512K32Q1-20L/Q 5962-9461109HMX PDF

    AS6C4008

    Abstract: as6c4008-55sin AS6C4008-55PCN cmos 4008 AUG09 SRAM 32 pin
    Text: AUGUST 2009 AS6C4008 512K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time : 55 ns Low power consumption: Operatingcurrent : 30 mA TYP. Standby current : 4 µA (TYP.) Single 2.7V ~ 5.5V power supply All outputs TTL compatible Fully static operation


    Original     		AS6C4008 32-pin 36-ball AS6C4008 304-bit as6c4008-55sin AS6C4008-55PCN cmos 4008 AUG09 SRAM 32 pin PDF

    Untitled

    Abstract: No abstract text available
    Text: 33C408 4 Megabit 512K x 8-Bit CMOS SRAM Memory Logic Diagram FEATURES: DESCRIPTION: • RAD-PAK Technology radiation-hardened against natural space radiation • 524,288 x 8 bit organization • Total dose hardness: - > 100 krad (Si), dependent upon orit or space mission


    Original     		33C408 32-Pin 01RevC 33C408 PDF

    AS6C4008

    Abstract: AS6C4008-55PCN AS6C4008-55SIN
    Text: MARCH 2009 AS6C4008 512K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION The AS6C4008 is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology.


    Original     		AS6C4008 AS6C4008 304-bit 32-pin MAR/09, AS6C4008-55PCN AS6C4008-55SIN PDF

    33C408

    Abstract: No abstract text available
    Text: 33C408 4 Megabit 512K x 8-Bit CMOS SRAM Memory Logic Diagram FEATURES: DESCRIPTION: • RAD-PAK Technology radiation-hardened against natural space radiation • 524,288 x 8 bit organization • Total dose hardness: - > 100 krad (Si), depending upon space mission


    Original     		33C408 33C408 PDF

    LY625128SL

    Abstract: LY625128 3217b
    Text:  LY625128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 2.3 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 Rev. 1.5 Rev. 2.0 Rev. 2.1 Rev. 2.2 Rev. 2.3 Description Initial Issue Revised ISB1/IDR Revised Test Condition of ICC Added -45ns Spec.


    Original     		LY625128 -45ns -35ns 11/1kage 32-pin 36-ball 44-pin LY625128SL LY625128 3217b PDF

    33C408

    Abstract: No abstract text available
    Text: 33C408 4 Megabit 512K x 8-Bit CMOS SRAM Memory FEATURES: DESCRIPTION: • RAD-PAK Technology radiation-hardened against natural space radiation • 524,288 x 8 bit organization • Total dose hardness: - > 100 krad (Si) - Dependent upon space mission • Excellent Single Event Effect


    Original     		33C408 33C408 01Rev7 PDF

    Untitled

    Abstract: No abstract text available
    Text: hmp 1M x 32 SRAM MODULE PUMA 84S32000 - 012/015/020 Elm Road, West Chirton Industrial Estate, North Shields, NE29 8SE, ENGLAND. TEL +44 0191 2930500. FAX +44 (0191) 2590997 Issue 2.0 : March 2002 Description Features The PUMA 84S32000 is a 32Mbit CMOS High Speed


    Original     		84S32000 32Mbit PDF

    Untitled

    Abstract: No abstract text available
    Text: M48T513Y M48T513V 3.3V-5V 4 Mb 512K x 8 TIMEKEEPER SRAM PRELIMINARY DATA • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL ■ YEAR 2000 COMPLIANT-CENTURY REGISTER ■ BCD CODED YEAR, MONTH, DAY, DATE,


    OCR Scan     		M48T513Y M48T513V PMLDIP36 48T513Y: 48T513V: iM48T513Y) M48T513Y, PMLDIP36 PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM14M3272IBM14M6472 IBM14M3264 High Performance SRAM Modules Features • 256K and 512K secondary cache module family using Synchronous and Asynchronous SRAM for PowerPC applications • Single +3.3V or +5V, +/- 5% power supply • Organized as a 32K or 64K x 72 package on a


    OCR Scan     		IBM14M3272IBM14M6472 IBM14M3264 136-lead, 50H4644 SA14-4701-02 IBM14M6472 IBM14M3272 E21031; 256KB PDF

    14M32

    Abstract: No abstract text available
    Text: IBM14M3272IBM14M6472 IBM14M3264 High Perform ance SRAM Modules Features • 256K and 512K secondary cache module family using Synchronous and Asynchronous SRAM for PowerPC applications Single +3.3V or +5V, +/- 5% power supply • Organized as a 32K or 64K x 72 package on a


    OCR Scan     		IBM14M3272IBM14M6472 IBM14M3264 136-lead, 512KB 14M32 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M I I C R O N MT5LC512K8D4 R E V O L U T IO N A R Y PINOUT 512K x 8 SRAM SRAM 512Kx 8 SRAM 3.3V OPERATION WITH OUTPUT ENABLE, REVOLUTIONARY PINOUT PIN ASSIGNMENT Top View • All I / O pins are 5V tolerant • H igh speed: 1 2 ,1 5 , 20, 25 an d 35ns


    OCR Scan     		MT5LC512K8D4 512Kx 36-Pin 5LC512K8D4 LC512K8D4 PDF

    Untitled

    Abstract: No abstract text available
    Text: n r¿ } l AUSTIN SEMICONDUCTOR, INC. AS88512K32 512K X 32 SRAM SRAM MODULE AVAILABLE AS MILITARY SPECIFICATIONS • • SMD 5962-94611 MIL-STD-883 PIN ASSIGNMENT Top View 68 Lead CQFP FEATURES Operation with single 5V supply High speed: 20, 25 and 35ns Built in decoupling caps for low noise


    OCR Scan     		AS88512K32 MIL-STD-883 512Kx32 AS8S512K AS8S512K32 PDF

    7c4096a

    Abstract: 7C4096 4096A
    Text: A S 7C 4096 A S 7C 34096 5V/3.3V 512K x8 CMOS SRAM Features • O ig a n iz a tb n : 5 2 4 ,2 8 8 w o iris x 8 b i s • H igh gpeed - 1 2 / 1 5 / 2 0 / 2 5 n sa d c h ess access tim e - 5 / 5 / 6 / 7 n s o u tp u t en ab ie access tim e • lo w pow e r consum p t b n


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: I ADVANCE MT5C512K8B2 512K X 8 SRAM SRAM 512Kx 8 SRAM WITH OUTPUT ENABLE FEATURES PIN ASSIGNMENT Top View • High speed: 2 0 ,2 5 , and 35ns • High-perform ance, low-power, CM OS double-metal process • Multiple center pow er and ground pins for improved


    OCR Scan     		MT5C512K8B2 512Kx 36-Pin PDF