SR3002

Abstract: sr6006 SR3004 SR1006 SR1004 SR3006
Contextual Info: LITE ? I SOFT RECOVERY FAST SWITCHING RECTIFIERS 1.0 AMPERE TO 6.0 AMPERES 50 VOLTS TO 1000 VOLTS PRV V \ type n o . 50 100 200 400 600 800 1000 CASE lo ( A l \ ' 1 SR1001 SR1002 SR1003 - SR1004 SR1005 SR1006 SR1007 DO-41 1.5 SR1501 SR1502 SR1503 SR1504

Contextual Info: SR1502 - SR1504 CREAT BY ART 15.0AMPS. Schottky Barrier Rectifiers R-6 Features — Low power loss, high efficiency. — High current capability, Low VF. — High reliability — High surge current capability. — Epitaxial construction. — Guard-ring for transient protection.

SR1503

Abstract: SR1502 SR1504
Contextual Info: Prelimitary SR1502 - SR1504 Pb 15.0 AMP. Schottky Barrier Rectifiers R-6 RoHS COMPLIANCE Features Low power loss, high efficiency. High current capability, Low VF. High reliability High surge current capability. Epitaxial construction. Guard-ring for transient protection.

Contextual Info: SR1502 thru SR1504 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - For use as Bypass diode in Solar application.

FBU4K

Abstract: FBU4J PBL302 1DQ04 2FBP06 FBU4G 1N4007 FAGOR FBU8K KBPC251OW 1IN5406
Contextual Info: RECTIFIER INDEX C R O SS REFERENCE LITE-ON MOTOROLA Gl P/N P/N P/N 1 N4001 1N 4001 1N4001G IR P/N FU JI SGS-THOMSON VARO FAGOR P/N P/N P/N P/N 1N4001 1N4001 1N4001G L 126 1N4002 1N4002G 1 N4002 10D1 ERB12-1 1N4001F 148 1N4002 150 126 1 N 4 0 0 2 GP 1N4002GL

diode marking f13

Contextual Info: SR1502 thru SR1504 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - For use as Bypass diode in Solar application.

Contextual Info: SR1502 - SR1504 CREAT BY ART Pb 15.0AMPS. Schottky Barrier Rectifiers R-6 RoHS COMPLIANCE Features — Low power loss, high efficiency. — High current capability, Low VF. — High reliability — High surge current capability. — Epitaxial construction. — Guard-ring for transient protection.

SR1505

Abstract: SR1501 SR1507
Contextual Info: TAIWAN LITON ELECTRONIC M'IE D • litem : i SEMICONDUCTORS 6635^5 D0Cm200 SOâ ■ TLIT SR1501 thru SR1507 ! _I 'T '- O S 'V S . VO LTA G E RANGE 50 to 1000 Volts C U R R EN T 1.5 Amperes DO-15 FEATURES • Low cost • Low leakage • Low forward voltage drop

Contextual Info: SR1502 - SR1504 15.0AMPS. Schottky Barrier Rectifiers R-6 Features ­ Low power loss, high efficiency. ­ High current capability, Low VF. ­ High reliability ­ High surge current capability. ­ Epitaxial construction. ­ Guard-ring for transient protection.

Contextual Info: SR1502 - SR1504 CREAT BY ART 15.0AMPS. Schottky Barrier Rectifiers R-6 Features — Low power loss, high efficiency. — High current capability, Low VF. — High reliability — High surge current capability. — Epitaxial construction. — Guard-ring for transient protection.

Schottky

Contextual Info: SR1502 thru SR1504 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - For use as Bypass diode in Solar application.

Contextual Info: LITEfl ZI SEMICONDUCTORS SR1501 thru SR1507 M A X I M U M R A T IN G S A N D E L E C T R IC A L C H A R A C T E R IS TIC S R a tin g s a t 2 5° C a m b ie n t te m p e ra tu r e unless o th e r w is e s p e c ifie d . S in g le p hase, h a lf w a ve , 6 0 H z , re s is tiv e o r in d u c t iv e lo a d .

SR1503

Abstract: SR1502 SR1504
Contextual Info: [s SR1502 - SR1504 TAIWAN SEMICONDUCTOR Pb 15.0 AMPS. Schottky Barrier Rectifiers R-6 RoHS COMPLIANCE T .280 7 .2 .270 (6.8) DIA. Features •> Low power loss, high efficiency. 4- High current capability, Low VF. 1.0(25.4) MIN. .360 (9.1) .340 (8.6) High reliability

E13 diode

Contextual Info: SR1502 - SR1504 CREAT BY ART 15.0AMPS. Schottky Barrier Rectifiers R-6 Features — Low power loss, high efficiency. — High current capability, Low VF. — High reliability — High surge current capability. — Epitaxial construction. — Guard-ring for transient protection.