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    MC 140 transistor

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION PINNING - SQT404 PIN SYMBOL PARAMETER Drain-source voltage Drain current DC Total power dissipation Junction temperature Drain-source on-state resistance


    OCR Scan     		PDF BUK7614-55 SQT404 MC 140 transistor

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors Triacs sensitive gate GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope suitable for surface mounting, intended for use in general purpose bidirectional switching and phase control


    OCR Scan     		PDF BT136B BT136BRepetitive SQT404

    diode c550

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Rectifier diodes PBYR20100CT, PBYR20100CTB series Schottky FEATURES • • • • • SYMBOL Low forward volt drop Fast switching Reverse surge capability


    OCR Scan     		PDF PBYR20100CT, PBYR20100CTB PBYR20100CT diode c550

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors N-channel TrenchMOS transistor Logic level FET SYMBOL FEATURES • • • • PHP21N06LT, PHB21N06LT PHD21N06LT QUICK REFERENCE DATA ’Trench’ technology Low on-state resistance Fast switching Logic level compatible


    OCR Scan     		PDF PHP21N06LT, PHB21N06LT PHD21N06LT PHP21N06LT T0220AB) PHB21N06LT OT428 OT428

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors N-channel TrenchMOS transistor SYMBOL FEATURES • • • • IRF640, IRF640S QUICK REFERENCE DATA ’Trench’ technology Low on-state resistance Fast switching Low thermal resistance V dss —200 V lD = 16 A


    OCR Scan     		PDF IRF640, IRF640S IRF640 T0220AB) IRF640S OT404

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistors PHP2N50E, PHB2N50E, PHD2N50E Avalanche energy SYMBOL FEATURES QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching Stable off-state characteristics


    OCR Scan     		PDF PHP2N50E, PHB2N50E, PHD2N50E PHP2N50E T0220AB) PHB2N50E OT404

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistors PHP3N40E, PHB3N40E, PHD3N40E Avalanche energy SYMBOL FEATURES • • • • • QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching


    OCR Scan     		PDF PHP3N40E, PHB3N40E, PHD3N40E PHP3N40E PHD3N40E

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK563-60A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for


    OCR Scan     		PDF BUK563-60A SQT404 SYMBOL00 BUK563-60A

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-200A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in


    OCR Scan     		PDF BUK465-200A SQT404

    transistor P7n

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • • • • • PHP7N40E, PHB7N40E SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance Low thermal resistance


    OCR Scan     		PDF PHP7N40E, PHB7N40E PHP7N40E T0220AB) PHB7N40E transistor P7n

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistors PHP3N40E, PHB3N40E, PHD3N40E Avalanche energy FEATURES • • • • • SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching


    OCR Scan     		PDF PHP3N40E, PHB3N40E, PHD3N40E PHP3N40E

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged SYMBOL FEATURES • • • • • • BYW29EB, BYW29ED series QUICK REFERENCE DATA Low forward volt drop Fast switching Soft recovery characteristic Reverse surge capability


    OCR Scan     		PDF BYW29EB, BYW29ED BYW29EB OT404 OT428 OT428

    diode BY229

    Abstract: philips Power MOSFET Selection Guide BY229-400, fast recovery diode Philips Semiconductors Power Diodes Selection Guide BY229F800 by329x BY359-1500 PBYR2040CT BY459X-1500 Philips Semiconductors Selection Guide
    Text: Philips Semiconductors Power Diodes Selection Guide Schottky Rectifiers The trend towards lower supply voltages In computers and high speed logic circuits has produced a need for rectifiers with very low forward voltages. The 20 V/ 25 V range of power schottky diodes is intended for use in d.c. To d.c.


    OCR Scan     		PDF 10/700HS BR211-140 BR211-160 BR211-180 BR211-200 BR211-220 BR211-240 BR211-260 BR211-280 BR211SM-140 diode BY229 philips Power MOSFET Selection Guide BY229-400, fast recovery diode Philips Semiconductors Power Diodes Selection Guide BY229F800 by329x BY359-1500 PBYR2040CT BY459X-1500 Philips Semiconductors Selection Guide

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES • • • • • • PHP130N03LT, PHB130N03LT SYMBOL ’Trench’ technology Very low on-state resistance Fast switching Stable off-state characteristics High thermal cycling performance


    OCR Scan     		PDF PHP130N03LT, PHB130N03LT PHP130N03LT T0220AB) PHP130NQ3LT,

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistors PHP7N40E, PHB7N40E Avalanche energy rated_ FEATURES • • • • • SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching Stable off-state characteristics


    OCR Scan     		PDF PHP7N40E, PHB7N40E PHP7N40E PHB7N40E

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose


    OCR Scan     		PDF BUK465-60H SQT404

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF SQT404 BUK462-60A 101is.

    11n06

    Abstract: 11n06LT transistor smd YR 11N06L smd transistor 5c SMD footprint design smd transistor 5c l 5c smd transistor
    Text: Philips Semiconductors Preliminary specification PHP11N06LT, PHB11N06LT, PHD11N06LT TrenchMOS transistor Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Vdss —55 V • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance


    OCR Scan     		PDF PHP11N06LT, PHB11N06LT, PHD11N06LT PHP11N06LT T0220AB) 11n06 11n06LT transistor smd YR 11N06L smd transistor 5c SMD footprint design smd transistor 5c l 5c smd transistor

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistors PHP6N60E, PHB6N60E Avalanche energy FEATURES • • • • • QUICK REFERENCE DATA SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics


    OCR Scan     		PDF PHP6N60E, PHB6N60E PHP6N60E T0220AB)

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device


    OCR Scan     		PDF PHB60N06T SQT404

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • • • • • PHP3N60E, PHB3N60E SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance


    OCR Scan     		PDF PHP3N60E, PHB3N60E PHP3N60E T0220AB) PHB3N60E

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product SDecification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface


    OCR Scan     		PDF BUK562-100A SQT404

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • • • • • PHP6N50E, PHB6N50E SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance Low thermal resistance


    OCR Scan     		PDF PHP6N50E, PHB6N50E PHP6N50E T0220AB) PHB6N50E

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION BUK464-200A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in


    OCR Scan     		PDF BUK464-200A SQT404 777ali