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    SQD10 Price and Stock

    Vishay Siliconix SQD100N04-3M6L_GE3

    MOSFET N-CH 40V 100A TO252AA
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    DigiKey SQD100N04-3M6L_GE3 Cut Tape 3,275 1
    • 1 $2.35
    • 10 $1.508
    • 100 $1.0278
    • 1000 $0.7554
    • 10000 $0.7554
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    SQD100N04-3M6L_GE3 Reel 2,000 2,000
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    • 10000 $0.64975
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    New Advantage Corporation SQD100N04-3M6L_GE3 4,000 1
    • 1 -
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    • 10000 $1.01
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    Vishay Siliconix SQD10950E_GE3

    MOSFET N-CH 250V 11.5A TO252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SQD10950E_GE3 Reel 2,000 2,000
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    • 10000 $0.52375
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    SQD10950E_GE3 Cut Tape 1,943 1
    • 1 $1.39
    • 10 $1.14
    • 100 $0.887
    • 1000 $0.61245
    • 10000 $0.61245
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    Vishay Siliconix SQD10N30-330H_GE3

    MOSFET N-CH 300V 10A TO252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SQD10N30-330H_GE3 Reel 2,000 2,000
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    SQD10N30-330H_GE3 Cut Tape 1,595 1
    • 1 $1.58
    • 10 $1.296
    • 100 $1.0079
    • 1000 $0.69593
    • 10000 $0.69593
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    Vishay Siliconix SQD100N02-3M5L_GE3

    MOSFET N-CH 20V 100A TO252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SQD100N02-3M5L_GE3 Cut Tape 1,450 1
    • 1 $2.16
    • 10 $1.38
    • 100 $0.9359
    • 1000 $0.68402
    • 10000 $0.68402
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    Broadcom Limited AUV4-SQD1-0RT0J

    3W 3535, 130DEG, 365NM
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    DigiKey AUV4-SQD1-0RT0J Cut Tape 745 1
    • 1 $13.71
    • 10 $10.34
    • 100 $8.6855
    • 1000 $8.6855
    • 10000 $8.6855
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    AUV4-SQD1-0RT0J Reel 500 500
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    • 1000 $7.53334
    • 10000 $7.53334
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    Avnet Americas AUV4-SQD1-0RT0J Reel 26 Weeks 2,000
    • 1 -
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    • 1000 -
    • 10000 $7.6
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    Mouser Electronics AUV4-SQD1-0RT0J
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    • 10000 $7.53
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    Newark AUV4-SQD1-0RT0J Cut Tape 1
    • 1 $14.26
    • 10 $10.75
    • 100 $9.04
    • 1000 $9.04
    • 10000 $9.04
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    Find more SQD10 price and stock on Findchips.com

    SQD10 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SQD100A Unknown Semiconductor Master Cross Reference Guide Scan PDF
    SQD100N02_3M5L4GE3 Vishay Siliconix MOSFET N-CH 20V 100A TO252AA Original PDF
    SQD100N02-3M5L_GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 20V 100A TO252AA Original PDF
    SQD100N03-3M2L_GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 100A TO252AA Original PDF
    SQD100N03-3M4_GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 100A TO252AA Original PDF
    SQD100N04-3M6L_GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO252AA Original PDF
    SQD100N04_3M6T4GE3 Vishay Siliconix MOSFET N-CH 40V 100A TO252AA Original PDF
    SQD100N04-3M6_GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO252AA Original PDF
    SQD10950E_GE3 Vishay Siliconix MOSFET N-CH 250V 11.5A TO252AA Original PDF
    SQD10N30-330H_GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 300V 10A TO252AA Original PDF

    SQD10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SQD100N04-3m6 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.0036 ID (A) • 100 % Rg and UIS Tested


    Original     		PDF SQD100N04-3m6 AEC-Q101 O-252 SQD100N04-3m6-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SQD100N04-3m6L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0036 RDS(on) () at VGS = 4.5 V 0.0042 ID (A) • Package with Low Thermal Resistance


    Original     		PDF SQD100N04-3m6L AEC-Q101 O-252 SQD100N04-3m6L-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SQD100N03-3m4 www.vishay.com Vishay Siliconix N-Channel 30 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF SQD100N03-3m4 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SQD100N03-3m4_RC

    Abstract: No abstract text available
    Text: SQD100N03-3m4_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SQD100N03-3m4 AN609, 5065m 2461m 5860m 0255m 1707m 5537m 6541m 9195m SQD100N03-3m4_RC

    Untitled

    Abstract: No abstract text available
    Text: SQD100N03-3m2L_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SQD100N03-3m2L AN609, 5066m 2461m 5834m 0255m 1714m 5537m 6545m 9195m

    65113

    Abstract: No abstract text available
    Text: SQD100N04-3m6L_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SQD100N04-3m6L AN609, 1559m 3845m 2826m 8875m 2207m 3217m 11-Dec-14 65113

    f 0452 N-Channel MOSFET

    Abstract: No abstract text available
    Text: SQD100N03-3m2L www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • 100 % Rg and UIS Tested 30 RDS(on) () at VGS = 10 V 0.0032 • AEC-Q101 Qualifiedd RDS(on) () at VGS = 4.5 V


    Original     		PDF SQD100N03-3m2L AEC-Q101 O-252 O-252 SQD100N03-3m2L-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A f 0452 N-Channel MOSFET

    Untitled

    Abstract: No abstract text available
    Text: SQD100N03-3m2L www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • 100 % Rg and UIS Tested 30 RDS(on) () at VGS = 10 V 0.0032 • AEC-Q101 Qualifiedd RDS(on) () at VGS = 4.5 V


    Original     		PDF SQD100N03-3m2L AEC-Q101 O-252 SQD100N03-3m2L-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SQD10N30-330H www.vishay.com Vishay Siliconix Automotive N-Channel 300 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 300 RDS(on) () at VGS = 10 V • AEC-Q101 Qualifiedd 0.330


    Original     		PDF SQD10N30-330H AEC-Q101 O-252 SQD10N30-330H-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SQD100N04-3m6L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0036 RDS(on) () at VGS = 4.5 V 0.0042 ID (A) • Package with Low Thermal Resistance


    Original     		PDF SQD100N04-3m6L AEC-Q101 O-252 SQD100N04-3m6L-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SQD100N04-3m6 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.0036 ID (A) • 100 % Rg and UIS Tested


    Original     		PDF SQD100N04-3m6 AEC-Q101 O-252 SQD100N04-3m6-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SQD10N30-330H www.vishay.com Vishay Siliconix Automotive N-Channel 300 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 300 RDS(on) () at VGS = 10 V • AEC-Q101 Qualifiedd 0.330


    Original     		PDF SQD10N30-330H AEC-Q101 O-252 SQD10N30-330H-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SQD100N03-3m2L www.vishay.com Vishay Siliconix N-Channel 30 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF SQD100N03-3m2L 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SQD100N04-3m6_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SQD100N04-3m6 AN609, 1507m 3845m 1444m 8875m 6943m 3217m 11-Dec-14

    Untitled

    Abstract: No abstract text available
    Text: SQD100N03-3m4 www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 30 RDS(on) () at VGS = 10 V • 100 % Rg and UIS Tested 0.0034 ID (A) • AEC-Q101 Qualifiedd 100


    Original     		PDF SQD100N03-3m4 AEC-Q101 O-252 SQD100N03-3m4-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    DPAK/TO-252

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power Mosfets SMM Medical Devices MOSFETs - Enhanced Quality Control Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the


    Original     		PDF Ups-2726 VMN-PL0469-1311 DPAK/TO-252

    SQJ469ep

    Abstract: SQ4483BE
    Text: Vishay Intertechnology, Inc. AEC-Q101 QUALIFIED SQ RUGGED SERIES MOSFET s ThunderFET ≥ 100 V, Low On-Resistance and Low FOM OPTIMIZED PowerPAK® SO-8L Optimum High and Low Side Combination in a 5 mm x 6 mm Package for Synchronous Buck PowerPAK SO-8L 1/2 the Size of


    Original     		PDF AEC-Q101 AEC-Q101 TS-16949 VMN-MS6925-1406 SQJ469ep SQ4483BE

    sq4435

    Abstract: SQP120N10-09
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs SMM Medical Devices Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the implantable medical market.


    Original     		PDF VMN-PL0469-1505 sq4435 SQP120N10-09

    KTY87-205

    Abstract: R40 AH philips kty87
    Text: •i bbsa'm Ü03S733 417 ■ APX KTY87-205 N AMER PHILIPS/DISCRETE b ^E D SILICON TEMPERATURE SENSORS The KTY87 are high precision temperature sensors w ith a positive temperature coefficient o f resistance fo r temperature measuring and temperature control. I n the temperature range 10 °C to 110 °C the


    OCR Scan     		PDF 03S733 KTY87-205 KTY87 Z54ll* SQD103; bbS3T31 Q032737 KTY87-205 R40 AH philips kty87

    BYD33Q

    Abstract: BYW97G BYM26G BYV95B BYV97G sod81 SOD64 Package sod-87
    Text: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Medium-power rectifiers FAST SOFT-RECOVERY CONTROLLED-AVALANCHE RECTIFIERS ratings type number V RRM max. V characteristics Vr max. (V) ' f (a v ) 'fsm


    OCR Scan     		PDF

    BYD77B

    Abstract: byv28 PHILIPS BYV27 SOD87 BYD73B BYD73D BYD73F BYD73G sod81
    Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Medium-power rectifiers ULTRA-FAST LOW-LOSS CONTROLLED-AVALANCHE RECTIFIERS OVERVIEW leaded SOD64 3.5 A SOD91 0.55 A surface-mount SOD87 SOD106 1.9 A


    OCR Scan     		PDF BYD73A BYD73B BYD73C BYD73D BYD73E BYD73F BYD73G BYV27-50 BYV27-100 BYV27-150 BYD77B byv28 PHILIPS BYV27 SOD87 BYD73G sod81

    B2W03

    Abstract: BZG04-8V2
    Text: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Medium-power rectifiers VOLTAGE REGULATOR DIODES LEADED BZD23 BZT03 B2W03 p 2 package Vz range11 V) P to. T .p r ZS M (W) (°C) (W) 3.6 to 270 7.5 to 270


    OCR Scan     		PDF BZD23 BZT03 B2W03 BZD27 BZG03 BZD23-C7V5 BZT03-C7V5 BZW03-C7V5 BZD27-C7V5 BZG04-8V2 B2W03

    smd diode byg

    Abstract: smd diode byg 20 BYG90-40 MARKING js smd F70 Package smd diode 3l BYG90-20 BYG90-30 byg 100 diode smd byg
    Text: Philips Semiconductors Product specification Schottky barrier rectifier diodes BYG90-40 series FEATURES • Low switching losses • Capability of absorbing very high surge current cathode identifier • Fast recovery time • Guard ring protected • Plastic SMD package.


    OCR Scan     		PDF BYG90-40 711Dfl2b 010S3TÃ 7110fiSti D1D5401 OD106A. D1G54G2 smd diode byg smd diode byg 20 MARKING js smd F70 Package smd diode 3l BYG90-20 BYG90-30 byg 100 diode smd byg

    Alc201A

    Abstract: s m r707 f8313 ALC201 OZ-165 SD socket chematic Realtek RTL8100c schematic schematic diagram vga ati p834 W83518D
    Text: Schematic Diagrams System Block Diagram 888E S C H E M A T IC CK TITAN Clocking OB ILITY M9 preW PG10 Intel gnt# ó PREQ1Í GNT#1 TSB43AB21 Pentiun 4 PREQ3# GNT#3 LAN RTL81ÛÛ /Northwood processor PREQ2# GNT#2 PGA478 DDR-SGRAM PCI1520 PG2,3 MINI PCI INT#A


    OCR Scan     		PDF PCI1520 TSB43AB21 RTL81Û PGA478 200MHz 66MHz VT6202L) 33MHz, DTA114E 71-888E0-D04) Alc201A s m r707 f8313 ALC201 OZ-165 SD socket chematic Realtek RTL8100c schematic schematic diagram vga ati p834 W83518D