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    SPW20 Search Results

    SPW20 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    XMSM0C1104SPW20R Texas Instruments 24 MHz Arm® Cortex®-M0+ MCU with 16-KB flash, 1-KB SRAM, 12-bit ADC 20-TSSOP -40 to 125 Visit Texas Instruments
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    SPW20 Price and Stock

    Texas Instruments MSPS003F4SPW20R

    24MHz Arm Cortex-M0+ MCU
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    DigiKey MSPS003F4SPW20R Cut Tape 2,988 1
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    Infineon Technologies AG SPW20N60C3FKSA1

    MOSFET N-CH 650V 20.7A TO247-3
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    DigiKey SPW20N60C3FKSA1 Tube 1,149 1
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    Infineon Technologies AG SPW20N60S5FKSA1

    MOSFET N-CH 600V 20A TO247-3
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    Texas Instruments MSPS003F3SPW20R

    24MHz Arm Cortex-M0+ MCU
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    DigiKey MSPS003F3SPW20R Digi-Reel 1
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    Mouser Electronics MSPS003F3SPW20R
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    Rochester Electronics LLC SPW20N60CFDFKSA1

    COOL MOS POWER TRANSISTOR
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    SPW20 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPW201K0J Meggitt CGS High Power Resistors - wirewound square ceramic cased Original PDF
    SPW201K0K Meggitt CGS High Power Resistors - wirewound square ceramic cased Original PDF
    SPW201R0J Meggitt CGS High Power Resistors - wirewound square ceramic cased Original PDF
    SPW201R0K Meggitt CGS High Power Resistors - wirewound square ceramic cased Original PDF
    SPW20N60C2 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPW20N60C2 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-247, RDSon=0.19Ohm, 20.0A Original PDF
    SPW20N60C3 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-247, RDSon=0.19, 20.0A Original PDF
    SPW20N60C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPW20N60C3FKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 20.7A TO-247 Original PDF
    SPW20N60CFD Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO247-3; VDS (max): 600.0 V; Package: TO-247; RDS(ON) @ TJ=25°C VGS=10: 220.0 mOhm; ID(max) @ TC=25°C: 20.7 A; IDpuls (max): 52.0 A; Original PDF
    SPW20N60CFD Infineon Technologies Cool MOS Power Transistor Original PDF
    SPW20N60CFDFKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 20.7A TO-247 Original PDF
    SPW20N60S5 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO247-3; VDS (max): 600.0 V; Package: TO-247; RDS(ON) @ TJ=25°C VGS=10: 190.0 mOhm; ID(max) @ TC=25°C: 20.0 A; IDpuls (max): 40.0 A; Original PDF
    SPW20N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPW20N60S5 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-247, RDSon=0.19Ohm, 20.0A Original PDF
    SPW20N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPW20N60S5 Siemens Cool MOS Power Transistor Original PDF
    SPW20N60S5 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SPW20N60S5FKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 20A TO-247 Original PDF
    SPW20R10J Meggitt CGS High Power Resistors - wirewound square ceramic cased Original PDF

    SPW20 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    20n60s5* values

    Abstract: 20n60s5 SPW20N60S5 equivalent 20N60S5 TO247 SPW20N60S5
    Text: SPW20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		SPW20N60S5 PG-TO247 Q67040-S4238 20N60S5 20n60s5* values 20n60s5 SPW20N60S5 equivalent 20N60S5 TO247 SPW20N60S5 PDF

    transistor 20N60s5

    Abstract: SPW20N60S5
    Text: SPW20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		SPW20N60S5 PG-TO247 SPW20N60S5 Q67040-S4238 20N60S5 transistor 20N60s5 PDF

    20n60cfd

    Abstract: No abstract text available
    Text: SPW20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		SPW20N60CFD PG-TO247 SPW20N60CFD Q67040-S4617 20N60CFD 20n60cfd PDF

    20n60s

    Abstract: 20n60s5 SPW20N60S5
    Text: SPW20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 20n60s 20n60s5 SPW20N60S5 PDF

    SPW20N60S5 equivalent

    Abstract: 20N60S5 TO247 20n60s5 transistor 20N60s5 SPW20N60S5 20n60
    Text: SPW20N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.19


    Original     		SPW20N60S5 P-TO247 SPWx1N60S5 Q67040-S4238 20N60S5 SPW20N60S5 equivalent 20N60S5 TO247 20n60s5 transistor 20N60s5 SPW20N60S5 20n60 PDF

    20n60c3

    Abstract: 20N60C3 equivalent SPW20N60C3 sp*20n60c3 SDP06S60 transistor 20N60c3 506V
    Text: SPW20N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.19 Ω


    Original     		SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20n60c3 20N60C3 equivalent SPW20N60C3 sp*20n60c3 SDP06S60 transistor 20N60c3 506V PDF

    20N60CFD

    Abstract: SPW20N60CFD TP001
    Text: SPW20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		SPW20N60CFD PG-TO247 Q67040-S4617 20N60CFD 20N60CFD SPW20N60CFD TP001 PDF

    transistor 20N60s5

    Abstract: 20n60s5 SPW20N60S5 equivalent SPW20N60S5 20n60s5 power transistor 20N60S5 TO247 20N60S RESISTANCE VALUE 20N60S5
    Text: SPW20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 transistor 20N60s5 20n60s5 SPW20N60S5 equivalent SPW20N60S5 20n60s5 power transistor 20N60S5 TO247 20N60S RESISTANCE VALUE 20N60S5 PDF

    20n60cfd

    Abstract: Q67040-S4617 SPW20N60CFD DSA003761 20N60CF
    Text: SPW20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		SPW20N60CFD P-TO247 Q67040-S4617 20N60CFD 20n60cfd Q67040-S4617 SPW20N60CFD DSA003761 20N60CF PDF

    20n60c2

    Abstract: SPW20N60C2 SDP06S60
    Text: SPW20N60C2 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V •=Periodic avalanche rated RDS on 0.19 Ω • Extreme dv/dt rated


    Original     		SPW20N60C2 P-TO247 Q67040-S4321 20N60C2 20n60c2 SPW20N60C2 SDP06S60 PDF

    20N60C2

    Abstract: SDP06S60 SPW20N60C2 TID10
    Text: SPW20N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V • Periodic avalanche rated RDS on 0.19 Ω • Extreme dv/dt rated ID 20 A • Ultra low effective capacitances


    Original     		SPW20N60C2 P-TO247 Q67040-S4321 20N60C2 20N60C2 SDP06S60 SPW20N60C2 TID10 PDF

    20N60C3

    Abstract: SPD06S60 SPW20N60C3 sp*20n60c3 transistor 20N60c3
    Text: SPW20N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20N60C3 SPD06S60 SPW20N60C3 sp*20n60c3 transistor 20N60c3 PDF

    20n60s5

    Abstract: SPW20N60S5 equivalent SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s
    Text: SPW20N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.19 Ω • Optimized capacitances ID


    Original     		SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 20n60s5 SPW20N60S5 equivalent SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s PDF

    SPW20N60C3

    Abstract: transistor 20N60c3
    Text: SPW20N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability


    Original     		SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 SPW20N60C3 transistor 20N60c3 PDF

    20N60S5 TO247

    Abstract: 20n60s5 transistor 20N60s5 20n60s5 power transistor SPW20N60S5 equivalent SPW20N60S5 siemens 350 98 SPW20 20n60s
    Text: SPW20N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated 1 S,3 2 3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original     		SPW20N60S5 SPWx1N60S5 SPW20N60S5 P-TO247 20N60S5 Q67040-S4238 20N60S5 TO247 20n60s5 transistor 20N60s5 20n60s5 power transistor SPW20N60S5 equivalent siemens 350 98 SPW20 20n60s PDF

    20n60c3

    Abstract: 20N60C3 equivalent SPD06S60 diode marking G36 SPW20N60C3 SPW20N60
    Text: SPW20N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability


    Original     		SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20n60c3 20N60C3 equivalent SPD06S60 diode marking G36 SPW20N60C3 SPW20N60 PDF

    20N60S5 TO247

    Abstract: 20n60s5 20N60S5 to-247 SPW20N60S5 20n60s5* values
    Text: SPW20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		SPW20N60S5 PG-TO247 Q67040-S4238 20N60S5 009-134-A O-247 20N60S5 TO247 20n60s5 20N60S5 to-247 SPW20N60S5 20n60s5* values PDF

    20N60S5

    Abstract: 20N60S5 TO247 SPW20N60S5 equivalent 20n60s5 power transistor 20n60 20n60s5 datasheet TO247 package dissipation SPW20N60S5 20n60s
    Text: SPW20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		SPW20N60S5 PG-TO247 Q67040-S4238 20N60S5 20N60S5 20N60S5 TO247 SPW20N60S5 equivalent 20n60s5 power transistor 20n60 20n60s5 datasheet TO247 package dissipation SPW20N60S5 20n60s PDF

    SPW20N60S5

    Abstract: No abstract text available
    Text: SPW20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 SPW20N60S5 PDF

    20n60c3

    Abstract: transistor 20N60c3 diode marking G36
    Text: SPW20N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.19 Ω • Extreme dv/dt rated ID 20.7 A • High peak current capability


    Original     		SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20n60c3 transistor 20N60c3 diode marking G36 PDF

    20n60s5

    Abstract: SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s
    Text: SPW20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 20n60s5 SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s PDF

    20n60c3

    Abstract: 20N60C3 equivalent SPW20N60C3 SPD06S60 transistor 20N60c3 131a SPW20N60C3 20N60C3
    Text: SPW20N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.19 Ω • Extreme dv/dt rated ID 20.7 A •=High peak current capability


    Original     		SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20n60c3 20N60C3 equivalent SPW20N60C3 SPD06S60 transistor 20N60c3 131a SPW20N60C3 20N60C3 PDF

    20N60C2

    Abstract: SPW20N60C2 Q67040-S4321 SDP06S60
    Text: SPW20N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V • Periodic avalanche rated RDS on 0.19 Ω • Extreme dv/dt rated ID 20 A • Ultra low effective capacitances


    Original     		SPW20N60C2 P-TO247 Q67040-S4321 20N60C2 20N60C2 SPW20N60C2 Q67040-S4321 SDP06S60 PDF

    20N60S5

    Abstract: No abstract text available
    Text: SIEMENS SPW20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity • Former development designation:


    OCR Scan     		SPW20N60S5 N60S5 SPW20N60S5 P-T0247 20N60S5 Q67040-S4238 20N60S5 PDF