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Rochester Electronics LLC SPW20N60CFDFKSA1 COOL MOS POWER TRANSISTOR
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DigiKey	SPW20N60CFDFKSA1	Bulk			102	1 - 10 - 100 - 1000 $2.95 10000 $2.95	Buy Now
Infineon Technologies AG SPW20N60CFDFKSA1 MOSFET N-CH 650V 20.7A TO247-3
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DigiKey	SPW20N60CFDFKSA1	Tube			240	1 - 10 - 100 - 1000 $2.73642 10000 $2.73642	Buy Now
Avnet Americas	SPW20N60CFDFKSA1	Tube		15 Weeks	240	1 - 10 - 100 - 1000 $2.4832 10000 $2.41529	Buy Now
	SPW20N60CFDFKSA1	Bulk			1	1 $3.5 10 $3.4 100 $3.29 1000 $3.12 10000 $3.12	Buy Now
Newark	SPW20N60CFDFKSA1	Bulk	385		1	1 $2.88 10 $2.88 100 $2.88 1000 $2.88 10000 $2.88	Buy Now
Rochester Electronics	SPW20N60CFDFKSA1		360		1	1 $2.7 10 $2.7 100 $2.54 1000 $2.3 10000 $2.3	Buy Now
EBV Elektronik	SPW20N60CFDFKSA1			16 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG SPP20N60CFDHKSA1 MOSFET N-CH 650V 20.7A TO220-3
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DigiKey	SPP20N60CFDHKSA1	Tube			500	1 - 10 - 100 - 1000 $2.15852 10000 $2.15852	Buy Now
Win Source Electronics	SPP20N60CFDHKSA1		9,910			1 - 10 - 100 $3.25 1000 $3.25 10000 $3.25	Buy Now
Infineon Technologies AG SPA20N60CFDXKSA1 MOSFET N-CH 600V 20.7A TO220-FP
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DigiKey	SPA20N60CFDXKSA1	Tube			500	1 - 10 - 100 - 1000 $2.14978 10000 $2.14978	Buy Now
Newark	SPA20N60CFDXKSA1	Bulk			1	1 $4.7 10 $3.95 100 $3.19 1000 $2.19 10000 $2.19	Buy Now
Rochester Electronics	SPA20N60CFDXKSA1		113		1	1 $2.23 10 $2.23 100 $2.1 1000 $1.9 10000 $1.9	Buy Now
EBV Elektronik	SPA20N60CFDXKSA1			16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC SPI20N60CFDXKSA1 N-CHANNEL POWER MOSFET
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DigiKey	SPI20N60CFDXKSA1	Bulk			125	1 - 10 - 100 - 1000 $2.41 10000 $2.41	Buy Now

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20N60CF Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Demands for High-efficiency Magnetics in GaN Power Electronics Abstract: 20n60cfd TPH3006 Text: APEC 2014, Fort Worth, Texas, March 16-20, 2014, IS2.5.3 Demands for High-efficiency Magnetics in GaN Power Electronics Yifeng Wu, Transphorm Inc. Table of Contents 1. 1st generation 600V GaN-on-Si HEMT properties and performance 2. GaN HEMT high-frequency application examples	Original	5W/600V 9W/600V Demands for High-efficiency Magnetics in GaN Power Electronics 20n60cfd TPH3006	PDF
D8172 Abstract: 20N60CFD D207 d207 infineon transistor D207 JESD22 PG-TO220-3 SP000216361 SPA20N60CFD PG-TO220-FP Text: 20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.22 Ω I D1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge	Original	SPA20N60CFD PG-TO220FP SP000216361 20N60CFD D8172 20N60CFD D207 d207 infineon transistor D207 JESD22 PG-TO220-3 SP000216361 SPA20N60CFD PG-TO220-FP	PDF
Untitled Abstract: No abstract text available Text: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated	Original	SPP20N60CFD PG-TO220-3-1 20N60CFD PG-TO220-3-1 Q67040-S4616	PDF
20n60cfd Abstract: No abstract text available Text: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability	Original	SPW20N60CFD PG-TO247 SPW20N60CFD Q67040-S4617 20N60CFD 20n60cfd	PDF
20N60CFD Abstract: SPW20N60CFD TP001 Text: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability	Original	SPW20N60CFD PG-TO247 Q67040-S4617 20N60CFD 20N60CFD SPW20N60CFD TP001	PDF
20n60cfd Abstract: PG-TO-220-3-1 SPP20N60CFD Text: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated	Original	SPP20N60CFD PG-TO220 Q67040-S4616 20N60CFD 20n60cfd PG-TO-220-3-1 SPP20N60CFD	PDF
20N60CFD Abstract: 20n60c SPI20N60CFD SPP20N60CFD ultra low idss Text: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO262 • Periodic avalanche rated • Extreme dv/dt rated	Original	SPI20N60CFD PG-TO262 20N60CFD 20N60CFD 20n60c SPI20N60CFD SPP20N60CFD ultra low idss	PDF
DF 331 TRANSISTOR Abstract: d207 Text: 20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.22 " I D1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge	Original	SPA20N60CFD PG-TO220-3-31 SP000216361 20N60CFD DF 331 TRANSISTOR d207	PDF
20n60cfd Abstract: Q67040-S4617 SPW20N60CFD DSA003761 20N60CF Text: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • High peak current capability	Original	SPW20N60CFD P-TO247 Q67040-S4617 20N60CFD 20n60cfd Q67040-S4617 SPW20N60CFD DSA003761 20N60CF	PDF
20n60cfd Abstract: D8172 JESD22 PG-TO220-3-31 SP000216361 SPA20N60CFD transistor D207 D207 Text: 20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.22 Ω I D1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge	Original	SPA20N60CFD PG-TO220-3-31 SP000216361 20N60CFD 20n60cfd D8172 JESD22 PG-TO220-3-31 SP000216361 SPA20N60CFD transistor D207 D207	PDF
d207 Abstract: 20N60CFD DF 331 TRANSISTOR JESD22 PG-TO220-3-31 SP000216361 SPA20N60CFD d207 infineon Text: 20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.22 Ω I D1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge	Original	SPA20N60CFD PG-TO220-3-31 SP000216361 20N60CFD d207 20N60CFD DF 331 TRANSISTOR JESD22 PG-TO220-3-31 SP000216361 SPA20N60CFD d207 infineon	PDF
20n60cfd Abstract: d207 infineon TRANSISTOR D131 D131 transistor D207 F207 diode SPA20N60CFD Text: 20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.22 Ω ID 8.3 A • Extremely low reverse recovery charge • Ultra low gate charge	Original	SPA20N60CFD PG-TO220-3-31 SP000079613 20N60CFD 20n60cfd d207 infineon TRANSISTOR D131 D131 transistor D207 F207 diode SPA20N60CFD	PDF
20N60CFD Abstract: No abstract text available Text: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated	Original	SPP20N60CFD PG-TO220-3-1 PG-TO220-3-1 Q67040-S4616 20N60CFD 20N60CFD	PDF
D8172 Abstract: 20n60cfd 20n60cf D207 F 207 diode Text: 20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode VDS 600 V RDS on ,max 0.22 W ID1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge	Original	SPA20N60CFD PG-TO220-3-31 SP000216361 20N60CFD D8172 20n60cfd 20n60cf D207 F 207 diode	PDF

Untitled Abstract: No abstract text available Text: 20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode VDS 600 V RDS on ,max 0.22 9 ID1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge	Original	SPA20N60CFD PG-TO220-3-31 SP000216361 20N60CFD	PDF
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265	PDF
20n60cfd Abstract: SPP20N60CFD 20n60c Text: 20N60CFD Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge P-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated	Original	SPP20N60CFD P-TO220-3-1 Q67040-S4616 20N60CFD 20n60cfd SPP20N60CFD 20n60c	PDF
20N60CFD Abstract: TP001 SPW20N60CFD 20n60c 207a Q67040-S4617 Text: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability	Original	SPW20N60CFD PG-TO247 Q67040-S4617 20N60CFD 20N60CFD TP001 SPW20N60CFD 20n60c 207a Q67040-S4617	PDF
20n60cfd Abstract: No abstract text available Text: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability	Original	SPW20N60CFD PG-TO247 SPW20N60CFD Q67040-S4617 20N60CFD 20n60cfd	PDF
20n60cfd Abstract: No abstract text available Text: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated	Original	SPP20N60CFD PG-TO220-3-1 20N60CFD PG-TO220-3-1 Q67040-S4616 20n60cfd	PDF
20n60cfd Abstract: SPW20N60CFD Text: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability	Original	SPW20N60CFD PG-TO247 Q67040-S4617 20N60CFD 009-134-A 20n60cfd SPW20N60CFD	PDF
20n60cfd Abstract: spp20N60CFD 20n60cf PG-TO-220-3-1 Q67040-S4616 Text: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated	Original	SPP20N60CFD PG-TO220 Q67040-S4616 20N60CFD 20n60cfd spp20N60CFD 20n60cf PG-TO-220-3-1 Q67040-S4616	PDF

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20N60CF Search Results

20N60CF Price and Stock

Rochester Electronics LLC SPW20N60CFDFKSA1

Infineon Technologies AG SPW20N60CFDFKSA1

Infineon Technologies AG SPP20N60CFDHKSA1

Infineon Technologies AG SPA20N60CFDXKSA1

Rochester Electronics LLC SPI20N60CFDXKSA1

20N60CF Datasheets Context Search

Demands for High-efficiency Magnetics in GaN Power Electronics

D8172

Untitled

20n60cfd

20N60CFD

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20N60CFD

DF 331 TRANSISTOR

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d207

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20N60CFD

D8172

Untitled

BCM 4336

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