SPICE
Abstract: models
Text: SPICE MODELS SPICE Model – xx413RAE This lumped-element SPICE model data simulates the frequency-dependent behavior of Coilcraft RF surface mount inductors from 1 MHz to the upper frequency limit shown in the accompanying table. The equivalent lumped element model schematic is
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xx413RAE
10E-04
40E-04
90E-04
32E-04
84E-04
49E-04
27E-04
18E-04
74E-04
SPICE
models
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SPICE
Abstract: models
Text: SPICE MODELS SPICE Model – xx413RAA This lumped-element SPICE model data simulates the frequency-dependent behavior of Coilcraft RF surface mount inductors from 1 MHz to the upper frequency limit shown in the accompanying table. The equivalent lumped element model schematic is
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xx413RAA
27E-04
18E-04
74E-04
10E-04
90E-04
80E-04
20E-04
05E-03
SPICE
models
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SIR164DP
Abstract: A7282 65060 spice model 740
Text: SPICE Device Model SiR164DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR164DP
18-Jul-08
A7282
65060
spice model 740
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR892DP Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR892DP
18-Jul-08
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SPICE
Abstract: models
Text: Document 158 SPICE Model – 1008HS This lumped-element SPICE model data simulates the frequency-dependent behavior of Coilcraft RF surface mount inductors from 1 MHz to the upper frequency limit shown in the accompanying table. The equivalent lumped element model schematic is
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1008HS
1008HS-821
1008HS-911
1008HS-102
10E-04
40E-04
90E-04
32E-04
84E-04
49E-04
SPICE
models
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Untitled
Abstract: No abstract text available
Text: Document 158 SPICE Model – 1008HS This lumped-element SPICE model data simulates the frequency-dependent behavior of Coilcraft RF surface mount inductors from 1 MHz to the upper frequency limit shown in the accompanying table. The equivalent lumped element model schematic is
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1008HS
1008HS-151
1008HS-181
1008HS-221
1008HS-271
1008HS-331
1008HS-391
1008HS-471
1008HS-561
1008HS-621
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SPICE
Abstract: models schematic 5250 Schematics 5250 1008CS
Text: Document 158 SPICE Model – 1008CS This lumped-element SPICE model data simulates the frequency-dependent behavior of Coilcraft RF surface mount inductors from 1 MHz to the upper frequency limit shown in the accompanying table. The equivalent lumped element model schematic is
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1008CS
27E-04
18E-04
74E-04
10E-04
90E-04
80E-04
20E-04
05E-03
SPICE
models
schematic 5250
Schematics 5250
1008CS
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423E-03
Abstract: No abstract text available
Text: Document 158 SPICE Model – 1008CS This lumped-element SPICE model data simulates the frequency-dependent behavior of Coilcraft RF surface mount inductors from 1 MHz to the upper frequency limit shown in the accompanying table. The equivalent lumped element model schematic is
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1008CS
we1008CS-822
27E-04
18E-04
74E-04
10E-04
90E-04
80E-04
20E-04
423E-03
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR892DP www.vishay.com Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR892DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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1227
Abstract: No abstract text available
Text: SPICE Device Model SiR788DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR788DP
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
1227
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SPICE
Abstract: PFL1610
Text: Document 267 SPICE Model – PFL1610 This lumped-element SPICE model data simulates the frequency-dependent behavior of Coilcraft power inductors within the frequency range shown in the accompanying table for each individual inductor. The data represents de-embedded measurements, as
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PFL1610
PFL1610
PFL1610-331
PFL1610-471
PFL1610-681
PFL1610-102
00E-05
00E-06
00E-04
SPICE
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SPICE
Abstract: variable inductor 1066 0943
Text: Document 267 SPICE Model – LPS3008 This lumped-element SPICE model data simulates the frequency-dependent behavior of Coilcraft power inductors within the frequency range shown in the accompanying table for each individual inductor. The data represents de-embedded measurements, as
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LPS3008
00E-05
00E-06
00E-04
30E-03
90E-06
SPICE
variable inductor 1066
0943
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1008HS-330
Abstract: No abstract text available
Text: Document 158 SPICE Model – 1008HS Table 1. Test Gap This lumped-element SPICE model data simulates the frequency-dependent behavior of Coilcraft RF surface mount inductors from 1 MHz to the upper frequency limit shown in the accompanying tables. Size 0402
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1008HS
1008HS-471
1008HS-561
1008HS-621
1008HS-681
1008HS-751
1008HS-821
1008HS-911
1008HS-102
10E-04
1008HS-330
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1008CS
Abstract: No abstract text available
Text: Document 158 SPICE Model – 1008CS Table 1. Test Gap This lumped-element SPICE model data simulates the frequency-dependent behavior of Coilcraft RF surface mount inductors from 1 MHz to the upper frequency limit shown in the accompanying tables. Size 0402
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1008CS
27E-04
18E-04
74E-04
10E-04
90E-04
80E-04
20E-04
05E-03
1008CS
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Si2305ADS
Abstract: S-81021
Text: SPICE Device Model Si2305ADS Vishay Siliconix P-Channel 8-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si2305ADS
18-Jul-08
S-81021
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BZX384C75
Abstract: BZX384C75 PSpice
Text: VISHAY BZX384C75_PSpice Vishay Semiconductors BZX384C75 Spice Parameters .SUBCKT bzx384_c75 2 1 * * Model Generated by MODPEX * *Copyright c Symmetry Design Systems* * All Rights Reserved * * UNPUBLISHED LICENSED SOFTWARE *
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BZX384C75
bzx384
60908e-14
5e-11
1e-08
D-74025
08-Dec-03
BZX384C75 PSpice
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7400 spice model
Abstract: SiE726DF d 1047 d 1047 transistor transistor equivalent book FOR D 1047 S-82127
Text: SPICE Device Model SiE726DF Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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SiE726DF
S-82127
15-Sep-08
7400 spice model
d 1047
d 1047 transistor
transistor equivalent book FOR D 1047
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BZX384C75
Abstract: No abstract text available
Text: VISHAY BZX384C75_SIN_Spice Vishay Semiconductors BZX384C75_SIN Spice Parameters template bzx384_c75 n2 n1 #* # Model Generated by MODPEX * #Copyright c Symmetry Design Systems* # All Rights Reserved * # UNPUBLISHED LICENSED SOFTWARE *
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BZX384C75
bzx384
60908e14
5e-11
1e-08)
D-74025
08-Dec-03
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SUP90N10-09
Abstract: No abstract text available
Text: SPICE Device Model SUP90N10-09 Vishay Siliconix N-Channel 100-V D-S 200°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP90N10-09
0-to-10V
08-May-03
SUP90N10-09
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SUP90N10-09
Abstract: spice model 740
Text: SPICE Device Model SUP90N10-09 Vishay Siliconix N-Channel 100-V D-S 200°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP90N10-09
18-Jul-08
SUP90N10-09
spice model 740
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SUM110N10-08
Abstract: No abstract text available
Text: SPICE Device Model SUM110N10-08 Vishay Siliconix N-Channel 100-V D-S 200°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM110N10-08
0-to-10V
08-May-03
SUM110N10-08
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KP1837
Abstract: RSS100N03 9475
Text: SPICE PARAMETER RSS100N03 by ROHM TR Div. * RSS100N03 NMOSFET model * Date: 2006/10/11 * This model includes a diode between source and drain. *D G S .SUBCKT RSS100N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RSS100N03
RSS100N03
0000E-6
75E-6
0000E-3
1388E-3
0000E6
52E-12
KP1837
9475
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a798
Abstract: A 798 SUP90N10-09 spice model 740
Text: SPICE Device Model SUP90N10-09 Vishay Siliconix N-Channel 100-V D-S 200°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP90N10-09
S-71519Rev.
23-Jul-07
a798
A 798
SUP90N10-09
spice model 740
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Untitled
Abstract: No abstract text available
Text: SiR808DP_GE3_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SiR808DP
AN609,
1555m
2783u
6809m
4813m
5804m
2240u
7492m
23-Mar-11
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