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    SPD02 Search Results

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    SPD02 Price and Stock

    Rochester Electronics LLC SPD02N50C3BTMA1

    MOSFET N-CH 500V 1.8A TO252
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    DigiKey SPD02N50C3BTMA1 Bulk 211,768 770
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    Infineon Technologies AG SPD02N80C3ATMA1

    MOSFET N-CH 800V 2A TO252-3
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    DigiKey SPD02N80C3ATMA1 Reel 2,500 2,500
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    SPD02N80C3ATMA1 Cut Tape 2,303 1
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    • 100 $0.7979
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    SPD02N80C3ATMA1 Digi-Reel 1
    • 1 $1.25
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    Avnet Americas SPD02N80C3ATMA1 Reel 4 Weeks 1
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    SPD02N80C3ATMA1 Reel 15 Weeks 2,500
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    Mouser Electronics SPD02N80C3ATMA1 55,797
    • 1 $0.83
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    Verical SPD02N80C3ATMA1 20,000 2,500
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    SPD02N80C3ATMA1 2,500 44
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    SPD02N80C3ATMA1 1,910 14
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    Arrow Electronics SPD02N80C3ATMA1 20,000 15 Weeks 2,500
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    SPD02N80C3ATMA1 Cut Strips 1,910 15 Weeks 1
    • 1 $0.859
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    • 100 $0.604
    • 1000 $0.4486
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    Newark SPD02N80C3ATMA1 Cut Tape 1
    • 1 $1.29
    • 10 $0.999
    • 100 $0.802
    • 1000 $0.517
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    Rochester Electronics SPD02N80C3ATMA1 580 1
    • 1 $0.5486
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    Chip1Stop SPD02N80C3ATMA1 Cut Tape 2,500
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    EBV Elektronik SPD02N80C3ATMA1 5,000 16 Weeks 2,500
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    New Advantage Corporation SPD02N80C3ATMA1 5,000 1
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    Vision Engineering Inc SPD026119

    10-DIOPTER STAYS LENS
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    DigiKey SPD026119 Ammo Pack 24 1
    • 1 $85
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    Newark SPD026119 Bulk 1
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    Vision Engineering Inc SPD025980

    4-DIOPTER STAYS LENS
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    DigiKey SPD025980 Ammo Pack 15 1
    • 1 $80
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    Newark SPD025980 Bulk 1
    • 1 $80
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    Vision Engineering Inc SPD026587

    KFM LED ACCESSORY HANDLE
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    DigiKey SPD026587 Ammo Pack 10 1
    • 1 $48
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    Newark SPD026587 Bulk 2 1
    • 1 $35.24
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    Find more SPD02 price and stock on Findchips.com

    SPD02 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SPD025980 Luxo Optical Inspection Equipment - Accessories - SP SUCTION LENS 4D Original PDF
    SPD026586 Luxo Optical Inspection Equipment - Accessories - HANDLE WHITE Original PDF
    SPD026587 Luxo Optical Inspection Equipment - Accessories - HANDLE LT GRAY Original PDF
    SPD026588 Luxo Optical Inspection Equipment - Accessories - HANDLE BLACK Original PDF
    SPD02N50C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPD02N50C3BTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - LOW POWER_LEGACY Original PDF
    SPD02N60 Siemens Original PDF
    SPD02N60 Siemens SIPMO Power Transistor Original PDF
    SPD02N60 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SPD02N60C3 Infineon Technologies CoolMOS Power MOSFET, 600V, DPAK, RDSon=3.00 ?, 1.8A Original PDF
    SPD02N60C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPD02N60C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPD02N60C3BTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 1.8A DPAK Original PDF
    SPD02N60S5 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO252-3; VDS (max): 600.0 V; Package: DPAK (TO-252); RDS(ON) @ TJ=25°C VGS=10: 3,000.0 mOhm; ID(max) @ TC=25°C: 1.8 A; IDpuls (max): 3.2 A; Original PDF
    SPD02N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPD02N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPD02N60S5 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SPD02N60S5BTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 1.8A TO-252 Original PDF
    SPD02N80C3 Infineon Technologies for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ... Original PDF
    SPD02N80C3 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO252-3; VDS (max): 800.0 V; Package: DPAK (TO-252); RDS(ON) @ TJ=25°C VGS=10: 2,700.0 mOhm; ID(max) @ TC=25°C: 2.0 A; IDpuls (max): 6.0 A; Original PDF

    SPD02 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SP*02N60

    Abstract: P-TO252 SPD02N60 SPU02N60
    Text: SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated Type VDS ID SPD02N60 600 V 2 A SPU02N60 Pin 1 Pin 2 Pin 3 G D S RDS on @ VGS Package VGS = 10 V P-TO252 5.5 Ω P-TO251 Maximum Ratings, at T j = 25 °C, unless otherwise specified


    Original     		PDF SPD02N60 SPU02N60 P-TO252 P-TO251 Q67040-S4133 Q67040-S4127-A2 SP*02N60 P-TO252 SPD02N60 SPU02N60

    02N60C3

    Abstract: 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6
    Text: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 Q67040-S4420 02N60C3 02N60C3 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6

    02N80C3

    Abstract: JESD22 SPD02N80C3 Transistor d12 t smd G47 02n80c
    Text: SPD02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPD02N80C3 PG-TO252-3 02N80C3 02N80C3 JESD22 SPD02N80C3 Transistor d12 t smd G47 02n80c

    02N50C3

    Abstract: 02N5 Q67040-S4570 SPD02N50C3 TRANSISTOR SMD MARKING CODE 490
    Text: SPD02N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 3 Ω ID 1.8 A • New revolutionary high voltage technology • Ultra low gate charge P-TO252-3-1 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPD02N50C3 P-TO252-3-1 Q67040-S4570 02N50C3 02N50C3 02N5 Q67040-S4570 SPD02N50C3 TRANSISTOR SMD MARKING CODE 490

    02N60S5

    Abstract: 02n60 P-TO251-3-1 SPD02N60S5 SPU02N60S5 P-TO252
    Text: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 Q67040-S4226 02N60S5 02N60S5 02n60 P-TO251-3-1 SPD02N60S5 SPU02N60S5 P-TO252

    Untitled

    Abstract: No abstract text available
    Text: SPD02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPD02N80C3 PG-TO252-3 02N80C3

    SPD02N60S5

    Abstract: 02N60S5 P-TO252 SPU02N60S5
    Text: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252. • Periodic avalanche rated • Extreme dv/dt rated P-TO251. 2 • Ultra low effective capacitances


    Original     		PDF SPU02N60S5 SPD02N60S5 P-TO252. P-TO251. Q67040-S4226 02N60S5 SPD02N60S5 02N60S5 P-TO252 SPU02N60S5

    02N60S5

    Abstract: SPD02N60S5 SPU02N60S5 GPT09051 P-TO251-3-1 P-TO252 Transistor 02N60S5
    Text: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on • Optimized capacitances ID P-TO252


    Original     		PDF SPU02N60S5 SPD02N60S5 P-TO251-3-1 Q67040-S4226 P-TO252 Q67040-S4213 02N60S5 02N60S5 SPD02N60S5 SPU02N60S5 GPT09051 P-TO251-3-1 P-TO252 Transistor 02N60S5

    02N60C3

    Abstract: P-TO252 SPD02N60C3 SPU02N60C3
    Text: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated ID •=Ultra low effective capacitances


    Original     		PDF SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 Q67040-S4420 02N60C3 02N60C3 P-TO252 SPD02N60C3 SPU02N60C3

    02N80C3

    Abstract: No abstract text available
    Text: SPD02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPD02N80C3 PG-TO252-3 02N80C3 02N80C3

    Untitled

    Abstract: No abstract text available
    Text: last update februari 28, 2011 DATASHEET SPD025SAsilUBS reference spd025sasilubsn.doc page 1/1 DIFFERENTIAL PRESSURE SENSOR WITH COMPENSATED ANALOGUE OUTPUT: SPD025SAsilUBS SPD025SAsilUBS This Smartec pressure sensor has an amplified analogue output. The sensor is compensated for


    Original     		PDF SPD025SAsilUBS spd025sasilubsn SPD025SAsilUBS 025SA

    DD35

    Abstract: 02N60C3
    Text: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated


    Original     		PDF SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 P-TO252 Q67040-S4420 02N60C3 DD35

    02N60

    Abstract: SPD02N60S5 SPU02N60S5
    Text: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 SPU02N60S5 Q67040-S4226 Q67040-S4213 02N60 SPD02N60S5

    02N60S5

    Abstract: 02N60 SPD02N60S5 SPU02N60S5
    Text: SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original     		PDF SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 P-TO251-3-1 P-TO252 02N60S5 02N60S5 Q67040-S4226 Q67040-S4213 02N60 SPD02N60S5

    SPD02N80C3

    Abstract: 02N80C3 Q67040-S4635 55-AK
    Text: SPD02N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 2.7 Ω ID 2 A P-TO252-3-1 • Periodic avalanche rated • Extreme dv/dt rated Type Package Ordering Code


    Original     		PDF SPD02N80C3 P-TO252-3-1 Q67040-S4635 02N80C3 SPD02N80C3 02N80C3 Q67040-S4635 55-AK

    Untitled

    Abstract: No abstract text available
    Text: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 3 Ω ID 1.8 A • Ultra low gate charge PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPU02N60S5 SPD02N60S5 PG-TO252 PG-TO251 Q67040-S4226 02N60S5

    02N60c3

    Abstract: 02n60 SPD02N60C3 EAS50 P-TO252 SPU02N60C3 DIODE MARKING CODE 623
    Text: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated


    Original     		PDF SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 Q67040-S4420 02N60C3 02N60c3 02n60 SPD02N60C3 EAS50 P-TO252 SPU02N60C3 DIODE MARKING CODE 623

    02n60s5

    Abstract: Transistor 02N60S5 02N60 PG-TO252-3-11 SPD02N60S5 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 1a SPU02N60S5 TRANSISTOR SMD MARKING CODE 42
    Text: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated PG-TO251 2 • Ultra low effective capacitances


    Original     		PDF SPU02N60S5 SPD02N60S5 PG-TO252 PG-TO251 Q67040-S4226 02N60S5 02n60s5 Transistor 02N60S5 02N60 PG-TO252-3-11 SPD02N60S5 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 1a SPU02N60S5 TRANSISTOR SMD MARKING CODE 42

    02n60

    Abstract: SPD02N60S5 SPU02N60S5
    Text: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4226 Q67040-S4213 02n60 SPD02N60S5

    02N60C3

    Abstract: SPD02N60C3
    Text: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances


    Original     		PDF SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 P-TO252 Q67040-S4420 02N60C3

    02N60

    Abstract: No abstract text available
    Text: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances


    Original     		PDF SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 P-TO252 Q67040-S4420 02N60C3 02N60

    02N6

    Abstract: 02N60S5 SPU02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5
    Text: SPU02N60S5 SPD02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original     		PDF SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 SPU02N60S5 P-TO251-3-1 02N60S5 Q67040-S4226 P-TO252 02N6 02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5

    SP*02N60

    Abstract: transistor smd hq
    Text: SIEMENS SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated V P T 0905 1 Type SPD02N60 ^DS h 600 V 2 A Pin 1 Pin 2 Pin 3 G D S f î DS on (a) VGS Package Ordering Code 5.5 Q, Vgs = 10 V P-T0252


    OCR Scan     		PDF SPD02N60 SPU02N60 P-T0251 Q67040-S4133 Q67040-S4127-A2 P-T0252 135ical SP*02N60 transistor smd hq

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel / n, /S. / • Enhancement mode • Avalanche rated kX VPT09050 VP T0 90 5 1 Pin 1 Pin 2 Pin 3 G D S Type Vds b f î DS on (5) VGS Package Ordering Code SPD02N60 600 V 2A


    OCR Scan     		PDF SPD02N60 SPU02N60 VPT09050 P-T0252 Q67040-S4133 P-T0251 Q67040-S4127-A2