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    SPB11 Price and Stock

    Infineon Technologies AG SPB11N60C3ATMA1

    MOSFET N-CH 650V 11A TO263-3
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    DigiKey SPB11N60C3ATMA1 Digi-Reel 3,507 1
    • 1 $4.44
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    SPB11N60C3ATMA1 Cut Tape 3,507 1
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    SPB11N60C3ATMA1 Reel 2,000 1,000
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    Avnet Americas SPB11N60C3ATMA1 Bulk 32 Weeks, 4 Days 1
    • 1 $3.66
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    Verical SPB11N60C3ATMA1 7 5
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    Arrow Electronics SPB11N60C3ATMA1 Cut Strips 7 15 Weeks 1
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    Newark SPB11N60C3ATMA1 Bulk 1,956 1
    • 1 $3.66
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    EBV Elektronik SPB11N60C3ATMA1 16 Weeks 1,000
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    3M Interconnect SPB-11

    WIRE MARKER BOOK 5.6X34.8MM 15EA
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    DigiKey SPB-11 Bulk 5 1
    • 1 $32.11
    • 10 $24.798
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    Avnet Americas SPB-11 Bulk 2 Weeks, 3 Days 5
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    Mouser Electronics SPB-11
    • 1 $28.33
    • 10 $24.56
    • 100 $19.67
    • 1000 $17.98
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    Newark SPB-11 Bulk 5
    • 1 $28.61
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    • 100 $23.55
    • 1000 $22.75
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    Prem Magnetics Inc SPB-110

    FIXED IND 100UH 2.1A 92 MOHM TH
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    DigiKey SPB-110 Bulk 5
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    • 10 $7.7
    • 100 $6.55
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    Ruland Manufacturing Co Inc SPB-11-F

    11/16" STEEL SHAFT COLLAR
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    DigiKey SPB-11-F Bag 1
    • 1 $16.13
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    RS SPB-11-F Bulk 3 Weeks 1
    • 1 $13.6
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    Ruland Manufacturing Co Inc SPB-11-A

    11/16" ALUMINUM SHAFT COLLAR
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    DigiKey SPB-11-A Bag 1
    • 1 $20.59
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    RS SPB-11-A Bulk 3 Weeks 1
    • 1 $18.04
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    Find more SPB11 price and stock on Findchips.com

    SPB11 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPB-11 3M Markers, Cables, Wires - Management, MARKER BOOK Original PDF
    SPB11N60C2 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPB11N60C2 SMD Infineon Technologies CoolMOS Power MOSFET, 600V, D2PAK, RDSon=0.38 ?, 11.0A Original PDF
    SPB11N60C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPB11N60C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPB11N60C3 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO263-3; VDS (max): 600.0 V; Package: D2PAK (TO-263); RDS(ON) @ TJ=25°C VGS=10: 380.0 mOhm; ID(max) @ TC=25°C: 11.0 A; IDpuls (max): 33.0 A; Original PDF
    SPB11N60C3ATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 11A D2PAK Original PDF
    SPB11N60C3 SMD Infineon Technologies CoolMOS Power MOSFET, 600V, D2PAK, RDSon=0.38 ?, 11.0A Original PDF
    SPB11N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPB11N60S5 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO263-3; VDS (max): 600.0 V; Package: D2PAK (TO-263); RDS(ON) @ TJ=25°C VGS=10: 380.0 mOhm; ID(max) @ TC=25°C: 11.0 A; IDpuls (max): 22.0 A; Original PDF
    SPB11N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPB11N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPB11N60S5ATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 11A TO-263 Original PDF
    SPB11N60S5 SMD Infineon Technologies CoolMOS Power MOSFET, 600V, D2PAK, RDSon=0.38 ?, 11.0A Original PDF

    SPB11 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    11N60C3

    Abstract: transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3
    Text: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated


    Original     		SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 11N60C3 transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3 PDF

    11N60S5 equivalent

    Abstract: 11N60S5 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 P-TO263-3-2 DSA003760
    Text: SPP11N60S5, SPB11N60S5 SPI11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge P-TO262 • Periodic avalanche rated VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated


    Original     		SPP11N60S5, SPB11N60S5 SPI11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPP11N60S5 Q67040-S4198 11N60S5 equivalent 11N60S5 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 P-TO263-3-2 DSA003760 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature New revolutionary high voltage technology Product Summary  Worldwide best R DS on in TO 220 VDS @ Tjmax 650 V  Ultra low gate charge


    Original     		SPP11N60C3, SPB11N60C3 SPI11N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 P-TO220-3-1 PDF

    11N60S5

    Abstract: 11N60S5 equivalent TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 TRANSISTOR SMD 2X y Q67040-S4338 TRANSISTOR 11n60s5
    Text: SPI11N60S5 SPP11N60S5, SPB11N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.38 Ω • Optimized capacitances


    Original     		SPI11N60S5 SPP11N60S5, SPB11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 Q67040-S4198 11N60S5 11N60S5 11N60S5 equivalent TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 TRANSISTOR SMD 2X y Q67040-S4338 TRANSISTOR 11n60s5 PDF

    11n60s

    Abstract: 11n60 SMD CASE footprint
    Text: SPP11N60S5 SPB11N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original     		SPP11N60S5 SPB11N60S5 SPPx2N60S5/SPBx2N60S5 P-TO220-3-1 P-TO263-3-2 11N60S5 11N60S5 Q67040-S4198 11n60s 11n60 SMD CASE footprint PDF

    piezo buzzer

    Abstract: AWG 24 UL1007 Buzzer SPB11 PB11-PD12AWR
    Text: SPL Hong Kong Limited Rm 2507, 25/F, Prosperity Centre, 25 Chong Yip St., Kwun Tong, Kln., HK. Tel: 852-23426867 / 57 Fax: 852-23426847 Email: sales@spl-hk.com.hk www.buzzer.com.hk ; www.transducer.com.hk ; www.connector.com.hk Piezo Buzzer SPB11 series


    Original     		SPB11 PC009U-R PB11-PD12AWR /30cm] UL1007 piezo buzzer AWG 24 UL1007 Buzzer PB11-PD12AWR PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.38 Ω •=Periodic avalanche rated ID


    Original     		SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 PDF

    11n60c2

    Abstract: transistor 11n60c2 spa 11n60c2
    Text: Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated ID • Extreme dv/dt rated


    Original     		SPP11N60C2, SPB11N60C2 SPA11N60C2 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP11N60C2 11n60c2 transistor 11n60c2 spa 11n60c2 PDF

    11N60C3

    Abstract: transistor 11n60c3
    Text: SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO263-3-2


    Original     		SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 11N60C3 transistor 11n60c3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPP11N60S5, SPB11N60S5 SPI11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO262 VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated


    Original     		SPP11N60S5, SPB11N60S5 SPI11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPP11N60S5 P-TO220-3-1 PDF

    11N60C3

    Abstract: transistor 11n60c3
    Text: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated


    Original     		SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 11N60C3 transistor 11n60c3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPB11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPB11N60S5 P-TO263-3-2 SPB11N60S5 Q67040-S4199 11N60S5 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPB11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO263 • Extreme dv/dt rated • High peak current capability


    Original     		SPB11N60C3 PG-TO263 SPB11N60C3 Q67040-S4396 11N60C3 PDF

    11n60c3

    Abstract: 11N60C SPB11N60C3 Q67040-S4396 SPD06S60 SPP11N60C3 4016A 11N60
    Text: SPB11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO263 • Extreme dv/dt rated • High peak current capability


    Original     		SPB11N60C3 PG-TO263 Q67040-S4396 11N60C3 11gerous 11n60c3 11N60C SPB11N60C3 Q67040-S4396 SPD06S60 SPP11N60C3 4016A 11N60 PDF

    11N60C3

    Abstract: 11N60C 11N60 SPP11N60C3 Q67042-S4403 TRANSISTOR SMD MARKING CODE 7A Q67040-S4395 Q67040-S4396 SPB11N60C3 SPI11N60C3
    Text: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax


    Original     		SPP11N60C3, SPB11N60C3 SPI11N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 Q67040-S4395 11N60C3 11N60C3 11N60C 11N60 SPP11N60C3 Q67042-S4403 TRANSISTOR SMD MARKING CODE 7A Q67040-S4395 Q67040-S4396 SPB11N60C3 SPI11N60C3 PDF

    68w Transistor smd

    Abstract: 11n60c2 transistor smd 68W marking code 68W 68w smd smd 68W transistor 68W SPP11N60C2 transistor 68W smd 11n60c2 equivalent
    Text: SPP11N60C2 SPB11N60C2 Preliminary data Cool MOS Power Transistor COOLMOS Power Semiconductors Feature Product Summary • New revolutionary high voltage technology · Ultra low gate charge VDS 600 V · Periodic avalanche rated RDS on 0.38 W · Extreme dv/dt rated


    Original     		SPP11N60C2 SPB11N60C2 P-TO263-3-2 P-TO220-3-1 Q67040-S4295 11N60C2 Q67040-S4298 68w Transistor smd 11n60c2 transistor smd 68W marking code 68W 68w smd smd 68W transistor 68W SPP11N60C2 transistor 68W smd 11n60c2 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: SPB11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO263-3-2 • Extreme dv/dt rated • High peak current capability


    Original     		SPB11N60C3 P-TO263-3-2 SPB11N60C3 Q67040-S4396 11N60C3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPB11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO263 • Extreme dv/dt rated • High peak current capability


    Original     		SPB11N60C3 PG-TO263 SPB11N60C3 Q67040-S4396 11N60C3 PDF

    11n60c3

    Abstract: transistor 11n60c3 11N60C SPB11N60C3 SPP11N60C3 Q67040-S4395 SPA11N60C3 SPI11N60C3 11N60
    Text: SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original     		SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 11n60c3 transistor 11n60c3 11N60C SPB11N60C3 SPP11N60C3 Q67040-S4395 SPA11N60C3 SPI11N60C3 11N60 PDF

    TRANSISTOR SMD MARKING CODE 7A

    Abstract: 11N60S5 PG-TO263-3-2 SPB11N60S5 SPP11N60S5
    Text: SPB11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		SPB11N60S5 PG-TO263 Q67040-S4199 11N60S5 TRANSISTOR SMD MARKING CODE 7A 11N60S5 PG-TO263-3-2 SPB11N60S5 SPP11N60S5 PDF

    11n60c3

    Abstract: transistor 11n60c3 Q67040-S4395 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3
    Text: Final data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original     		SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 11n60c3 transistor 11n60c3 Q67040-S4395 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3 PDF

    11N60C3

    Abstract: 11N60C SPP11N60C3 transistor 11n60c3 AR1010
    Text: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on


    Original     		SPP11N60C3, SPB11N60C3 SPI11N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 P-TO220-3-1 11N60C3 11N60C transistor 11n60c3 AR1010 PDF

    11n60c2

    Abstract: 11n60c2 equivalent transistor 11n60c2 11n60c2* equivalents 11N60C spa 11n60c2 2002-08-12 11N6 SPB11N60C2 SPP11N60C2
    Text: Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.38 Ω • Periodic avalanche rated ID 11 A • Extreme dv/dt rated


    Original     		SPP11N60C2, SPB11N60C2 SPA11N60C2 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP11N60C2 Q67040-S4295 11n60c2 11n60c2 equivalent transistor 11n60c2 11n60c2* equivalents 11N60C spa 11n60c2 2002-08-12 11N6 SPB11N60C2 SPP11N60C2 PDF

    TRANSISTOR SMD MARKING CODE 7A

    Abstract: 11N60S5 SPB11N60S5 SPI11N60S5 SPP11N60S5
    Text: SPI11N60S5 SPP11N60S5, SPB11N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated


    Original     		SPI11N60S5 SPP11N60S5, SPB11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPPx2N60S5/SPBx2N60S5 SPP11N60S5 Q67040-S4198 TRANSISTOR SMD MARKING CODE 7A 11N60S5 SPB11N60S5 SPI11N60S5 SPP11N60S5 PDF