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Infineon Technologies AG SPB02N60S5ATMA1 MOSFET N-CH 600V 1.8A TO263-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPB02N60S5ATMA1	Cut Tape	87		1	1 $0.75 10 $0.589 100 $0.589 1000 $0.589 10000 $0.589	Buy Now
	SPB02N60S5ATMA1	Reel			1,000	1 - 10 - 100 - 1000 $0.50527 10000 $0.405	Buy Now
3M Interconnect SPB-02 WIRE MARKR BOOK 5.6MMX34.8MM WHT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPB-02	Bulk	3		1	1 $24.86 10 $21.769 100 $19.4844 1000 $17.87194 10000 $17.87194	Buy Now
Avnet Americas	SPB-02	Bulk		1 Weeks, 4 Days	1	1 $27.81 10 $25.02 100 $21.96 1000 $21.96 10000 $21.96	Buy Now
	SPB-02	Bulk		2 Weeks, 3 Days	5	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	SPB-02		6			1 $24.86 10 $21.76 100 $19.48 1000 $18.4 10000 $18.4	Buy Now
Newark	SPB-02	Bulk	7		1	1 $27.81 10 $25.02 100 $21.96 1000 $19.96 10000 $19.96	Buy Now
SMC Diode Solutions 67SPB020A DIODE SCHOTTKY 20V 60A SPD-2A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	67SPB020A	Box			7,200	1 - 10 - 100 - 1000 - 10000 $6.47775	Buy Now
TME	67SPB020A				1	1 $15 10 $13.5 100 $10.7 1000 $9.64 10000 $9.64	Get Quote
Hirose Electric Co Ltd A3-SP(B)(02) CONN SHUNT F 2 POS 2MM ST
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	A3-SP(B)(02)	Bulk			1,000	1 - 10 - 100 - 1000 $0.2692 10000 $0.2692	Buy Now
Avnet Americas	A3-SP(B)(02)	Bag			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	A3-SP(B)(02)					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Abacus	A3-SP(B)(02)			14 Weeks	60,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Sager	A3-SP(B)(02)					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC SPB02N60C3ATMA1 MOSFET N-CH 650V 1.8A TO263-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPB02N60C3ATMA1	Bulk			473	1 - 10 - 100 - 1000 $0.64 10000 $0.64	Buy Now

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SPB02 Datasheets (12)

Part	Manufacturer	Description	Datasheet Type	PDF
SPB-02	3M Electronics	CABLE ACCESSORIES MARKER VINYL	Original	PDF
SPB02N60C3	Infineon Technologies	Cool MOS Power Transistor	Original	PDF
SPB02N60C3	Infineon Technologies	Cool MOS Power Transistor	Original	PDF
SPB02N60C3ATMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 1.8A D2PAK	Original	PDF
SPB02N60C3 SMD	Infineon Technologies	CoolMOS Power MOSFET, 600V, D2PAK, RDSon=3.00 ?, 1.8A	Original	PDF
SPB02N60S5	Infineon Technologies	Cool MOS Power Transistor	Original	PDF
SPB02N60S5	Infineon Technologies	Cool MOS Power Transistor	Original	PDF
SPB02N60S5	Infineon Technologies	Cool MOS Power Transistor	Original	PDF
SPB02N60S5	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
SPB02N60S5ATMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 1.8A TO-263	Original	PDF
SPB02N60S5E3045	Infineon Technologies	Transistor Mosfet N-CH 600V 1.8A 3P-TO263-3-2 T/R	Original	PDF
SPB02N60S5 SMD	Infineon Technologies	CoolMOS Power MOSFET, 600V, D2PAK, RDSon=3.00 ?, 1.8A	Original	PDF

SPB02 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
02n60s5 Abstract: Transistor 02N60S5 02N60 Q67040-S4212 SPB02N60S5 SPP02N60S5 P-TO263-3-2 Q67040-S4181 Text: SPP02N60S5 SPB02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated 2 • Ultra low effective capacitances	Original	PDF	SPP02N60S5 SPB02N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4181 02N60S5 02n60s5 Transistor 02N60S5 02N60 Q67040-S4212 SPB02N60S5 SPP02N60S5 P-TO263-3-2 Q67040-S4181
SPB02N60S5 Abstract: No abstract text available Text: SPB02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance	Original	PDF	SPB02N60S5 P-TO263-3-2 SPB02N60S5 Q67040-S4212 02N60S5
02N60C3 Abstract: smd diode marking 20 smd transistor marking 03 02N60 250TD Text: SPP02N60C3 SPB02N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances	Original	PDF	SPP02N60C3 SPB02N60C3 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4392 Q67040-S4393 02N60C3 smd diode marking 20 smd transistor marking 03 02N60 250TD
V6 marking code Abstract: diode marking v6 Text: SPP02N60C3 SPB02N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances	Original	PDF	SPP02N60C3 SPB02N60C3 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4392 Q67040-S4393 V6 marking code diode marking v6
02N60S5 Abstract: SPB02N60S5 SPP02N60S5 Text: SPP02N60S5 SPB02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	PDF	SPP02N60S5 SPB02N60S5 SPPx5N60S5/SPBx5N60S5 SPP02N60S5 P-TO220-3-1 02N60S5 Q67040-S4181 P-TO263-3-2 02N60S5 SPB02N60S5
02N60 Abstract: 02N60C3 SPB02N60C3 SPP02N60C3 SP*02N60 marking code V6 diode Text: SPP02N60C3 SPB02N60C3 Final data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated ID •=Ultra low effective capacitances	Original	PDF	SPP02N60C3 SPB02N60C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4392 02N60C3 02N60 02N60C3 SPB02N60C3 SPP02N60C3 SP*02N60 marking code V6 diode
Q67040-S4181 Abstract: 02N60 SPB02N60S5 SPP02N60S5 02N60S5 Q67040S4181 Q67040-S4212 Transistor 02N60S5 P-TO-263-3-2 Text: SPP02N60S5 SPB02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPP02N60S5 SPB02N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4181 02N60S5 Q67040-S4181 02N60 SPB02N60S5 SPP02N60S5 02N60S5 Q67040S4181 Q67040-S4212 Transistor 02N60S5 P-TO-263-3-2
02N60C3 Abstract: SPP02N60C3 SPB02N60C3 02n60c Text: SPP02N60C3 SPB02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated	Original	PDF	SPP02N60C3 SPB02N60C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4392 02N60C3 02N60C3 SPP02N60C3 SPB02N60C3 02n60c
SPP02N60S5 Abstract: k 117 02n60s5 smd diode 44a SPB02N60S5 SPBX5N60S5 02N60 Transistor 02N60S5 Text: SPP02N60S5 SPB02N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on	Original	PDF	SPP02N60S5 SPB02N60S5 P-TO263-3-2 P-TO220-3-1 SPPx5N60S5/SPBx5N60S5 Q67040-S4181 02N60S5 SPP02N60S5 k 117 02n60s5 smd diode 44a SPB02N60S5 SPBX5N60S5 02N60 Transistor 02N60S5
02N60C3 Abstract: No abstract text available Text: SPP02N60C3 SPB02N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated	Original	PDF	SPP02N60C3 SPB02N60C3 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4392 Q67040-S4393 02N60C3
SPB02N60S5 Abstract: SPP02N60S5 02N60S5 siemens 230 98 O Text: SPP02N60S5 SPB02N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity	Original	PDF	SPP02N60S5 SPB02N60S5 SPPx5N60S5/SPBx5N60S5 SPP02N60S5 P-TO220-3-1 P-TO263-3-2 02N60S5 Q67040-S4181 SPB02N60S5 02N60S5 siemens 230 98 O
SPB02N60S5 Abstract: No abstract text available Text: SPB02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance	Original	PDF	SPB02N60S5 PG-TO263 SPB02N60S5 Q67040-S4212 02N60S5
Buzzer Abstract: piezo buzzer Text: SPL Hong Kong Limited Rm 2507, 25/F, Prosperity Centre, 25 Chong Yip St., Kwun Tong, Kln., HK. Tel: 852-23426867 / 57 Fax: 852-23426847 Email: sales@spl-hk.com.hk www.buzzer.com.hk ; www.transducer.com.hk ; www.connector.com.hk Piezo Buzzer SPB02 series	Original	PDF	SPB02 QS083-R PB02-SD12AWR /30cm] UL1007 Buzzer piezo buzzer
SPB02N60S5 Abstract: SPP02N60S5 02N60 02N60S5 02n60s Text: SPP02N60S5 SPB02N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	PDF	SPP02N60S5 SPB02N60S5 SPPx5N60S5/SPBx5N60S5 P-TO220-3-1 02N60S5 Q67040-S4181 P-TO263-3-2 SPP02N60S5 SPB02N60S5 02N60 02N60S5 02n60s

02N60C3 Abstract: SPB02N60C3 SPP02N60C3 Text: SPP02N60C3 SPB02N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated	Original	PDF	SPP02N60C3 SPB02N60C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4392 02N60C3 02N60C3 SPB02N60C3 SPP02N60C3
02N60S5 Abstract: SPB02N60S5 SPP02N60S5 Text: SPP02N60S5 SPB02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	PDF	SPP02N60S5 SPB02N60S5 SPPx5N60S5/SPBx5N60S5 SPP02N60S5 P-TO220-3-1 02N60S5 Q67040-S4181 P-TO263-3-2 02N60S5 SPB02N60S5
02N60C3 Abstract: SPB02N60C3 SPP02N60C3 02N60 Text: SPP02N60C3 SPB02N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A • New revolutionary high voltage technology • Ultra low gate charge P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated	Original	PDF	SPP02N60C3 SPB02N60C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4392 02N60C3 02N60C3 SPB02N60C3 SPP02N60C3 02N60
SPB02N60S5 Abstract: SPP02N60S5 Text: SPP02N60S5 SPB02N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on • Optimized capacitances ID P-TO263-3-2	Original	PDF	SPP02N60S5 SPB02N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4181 Q67040-S4212 SPB02N60S5
SMD Diode V6 marking code Abstract: SPP02N60C3 Text: SPP02N60C3 SPB02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated	Original	PDF	SPP02N60C3 SPB02N60C3 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4392 Q67040-S4393 SMD Diode V6 marking code
SPB02N60S5 Abstract: 02N60 02N60S5 PG-TO263-3-2 SPP02N60S5 PG-TO-263-3-2 Text: SPB02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance	Original	PDF	SPB02N60S5 PG-TO263 Q67040-S4212 02N60S5 07gerous SPB02N60S5 02N60 02N60S5 PG-TO263-3-2 SPP02N60S5 PG-TO-263-3-2
P-TO263-3-2 Abstract: Q67040-S4181 SPB02N60S5 SPP02N60S5 Text: SPP02N60S5 SPB02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPP02N60S5 SPB02N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4181 Q67040-S4212 P-TO263-3-2 SPB02N60S5
WCs MARKING Abstract: SMD MARKING code ASC SMD MARKING CODE RAC 5117400 Text: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Fast Page Mode HYB 5116400BJ-50/-60 HYB 5117400BJ-50/-60 HYB 3116400BJ/BT-50/-60 HYB 3117400BJ-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation	Original	PDF	5116400BJ-50/-60 5117400BJ-50/-60 3116400BJ/BT-50/-60 3117400BJ-50/-60 400BJ-50/-60 400BJ/BT-50/-60 P-TSOPII-26/24-1 GPX05857 WCs MARKING SMD MARKING code ASC SMD MARKING CODE RAC 5117400
Untitled Abstract: No abstract text available Text: SIEMENS SPP02N60S5 SPB02N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity	OCR Scan	PDF	SPP02N60S5 SPB02N60S5 SPPx5N60S5/SPBx5N60S5 P-T0220-3-1 02N60S5 Q67040-S4181 P-T0263-3-2
Untitled Abstract: No abstract text available Text: SIEMENS 3.3V 8M x 64-Bit EOO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module HYM64V8005GU-50/-60/-70 HYM64V8045GU-50/-60/-70 HYM72V8005GU-50/-60/-70 HYM72 V8045G U-50/-60/-70 168pin unbuffered DIMM Module with serial presence detect Preliminary Information •	OCR Scan	PDF	64-Bit 72-Bit 168pin HYM64V8005GU-50/-60/-70 HYM64V8045GU-50/-60/-70 HYM72V8005GU-50/-60/-70 HYM72 V8045G U-50/-60/-70 V8005/45GU-50/-60/-70

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SPB02 Search Results

SPB02 Price and Stock

Infineon Technologies AG SPB02N60S5ATMA1

3M Interconnect SPB-02

SMC Diode Solutions 67SPB020A

Hirose Electric Co Ltd A3-SP(B)(02)

Rochester Electronics LLC SPB02N60C3ATMA1

SPB02 Datasheets (12)

SPB02 Datasheets Context Search

02n60s5

SPB02N60S5

02N60C3

V6 marking code

02N60S5

02N60

Q67040-S4181

02N60C3

SPP02N60S5

02N60C3

SPB02N60S5

SPB02N60S5

Buzzer

SPB02N60S5

02N60C3

02N60S5

02N60C3

SPB02N60S5

SMD Diode V6 marking code

SPB02N60S5

P-TO263-3-2

WCs MARKING

Untitled

Untitled