02n60s5
Abstract: Transistor 02N60S5 02N60 Q67040-S4212 SPB02N60S5 SPP02N60S5 P-TO263-3-2 Q67040-S4181
Text: SPP02N60S5 SPB02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated 2 • Ultra low effective capacitances
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SPP02N60S5
SPB02N60S5
P-TO263-3-2
P-TO220-3-1
Q67040-S4181
02N60S5
02n60s5
Transistor 02N60S5
02N60
Q67040-S4212
SPB02N60S5
SPP02N60S5
P-TO263-3-2
Q67040-S4181
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02N60S5
Abstract: SPB02N60S5 SPP02N60S5
Text: SPP02N60S5 SPB02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:
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SPP02N60S5
SPB02N60S5
SPPx5N60S5/SPBx5N60S5
SPP02N60S5
P-TO220-3-1
02N60S5
Q67040-S4181
P-TO263-3-2
02N60S5
SPB02N60S5
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Q67040-S4181
Abstract: 02N60 SPB02N60S5 SPP02N60S5 02N60S5 Q67040S4181 Q67040-S4212 Transistor 02N60S5 P-TO-263-3-2
Text: SPP02N60S5 SPB02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances
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SPP02N60S5
SPB02N60S5
P-TO263-3-2
P-TO220-3-1
Q67040-S4181
02N60S5
Q67040-S4181
02N60
SPB02N60S5
SPP02N60S5
02N60S5
Q67040S4181
Q67040-S4212
Transistor 02N60S5
P-TO-263-3-2
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SPP02N60S5
Abstract: k 117 02n60s5 smd diode 44a SPB02N60S5 SPBX5N60S5 02N60 Transistor 02N60S5
Text: SPP02N60S5 SPB02N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on
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SPP02N60S5
SPB02N60S5
P-TO263-3-2
P-TO220-3-1
SPPx5N60S5/SPBx5N60S5
Q67040-S4181
02N60S5
SPP02N60S5
k 117
02n60s5
smd diode 44a
SPB02N60S5
SPBX5N60S5
02N60
Transistor 02N60S5
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SPB02N60S5
Abstract: SPP02N60S5 02N60S5 siemens 230 98 O
Text: SPP02N60S5 SPB02N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity
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SPP02N60S5
SPB02N60S5
SPPx5N60S5/SPBx5N60S5
SPP02N60S5
P-TO220-3-1
P-TO263-3-2
02N60S5
Q67040-S4181
SPB02N60S5
02N60S5
siemens 230 98 O
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SPP02N60S5
Abstract: No abstract text available
Text: SPP02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances
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PDF
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SPP02N60S5
P-TO220-3-1
PG-TO220-3-1
SPP02N60S5
PG-TO220-3-1
Q67040-S4181
02N60S5
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SPB02N60S5
Abstract: SPP02N60S5 02N60 02N60S5 02n60s
Text: SPP02N60S5 SPB02N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:
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SPP02N60S5
SPB02N60S5
SPPx5N60S5/SPBx5N60S5
P-TO220-3-1
02N60S5
Q67040-S4181
P-TO263-3-2
SPP02N60S5
SPB02N60S5
02N60
02N60S5
02n60s
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SPB02N60S5
Abstract: SPP02N60S5
Text: SPP02N60S5 SPB02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances
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SPP02N60S5
SPB02N60S5
P-TO263-3-2
P-TO220-3-1
P-TO220-3-1
Q67040-S4181
Q67040-S4212
SPB02N60S5
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02N60S5
Abstract: SPB02N60S5 SPP02N60S5
Text: SPP02N60S5 SPB02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:
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PDF
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SPP02N60S5
SPB02N60S5
SPPx5N60S5/SPBx5N60S5
SPP02N60S5
P-TO220-3-1
02N60S5
Q67040-S4181
P-TO263-3-2
02N60S5
SPB02N60S5
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SPP02N60S5
Abstract: 02N60S5
Text: SPP02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances 1
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SPP02N60S5
PG-TO220
P-TO220-3-1
Q67040-S4181
02N60S5
SPP02N60S5
02N60S5
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Untitled
Abstract: No abstract text available
Text: SPP02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances 1
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SPP02N60S5
PG-TO220
P-TO220-3-1
Q67040-S4181
02N60S5
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SPB02N60S5
Abstract: SPP02N60S5
Text: SPP02N60S5 SPB02N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on • Optimized capacitances ID P-TO263-3-2
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SPP02N60S5
SPB02N60S5
P-TO263-3-2
P-TO220-3-1
P-TO220-3-1
Q67040-S4181
Q67040-S4212
SPB02N60S5
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BCM 4336
Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06
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B192-H6780-G9-X-7600
D-81669
VDSL5100i-E
VDSL6100i-E
BCM 4336
2A0565
C2335
2A280Z
C1740 bipolar transistor
transistor A1267
a1273 transistor
c2335 r
2B0565
2b265
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P-TO263-3-2
Abstract: Q67040-S4181 SPB02N60S5 SPP02N60S5
Text: SPP02N60S5 SPB02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances
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Original
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PDF
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SPP02N60S5
SPB02N60S5
P-TO263-3-2
P-TO220-3-1
P-TO220-3-1
Q67040-S4181
Q67040-S4212
P-TO263-3-2
SPB02N60S5
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Untitled
Abstract: No abstract text available
Text: SIEMENS SPP02N60S5 SPB02N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity
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OCR Scan
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PDF
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SPP02N60S5
SPB02N60S5
SPPx5N60S5/SPBx5N60S5
P-T0220-3-1
02N60S5
Q67040-S4181
P-T0263-3-2
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