S29GL064N application notes
Abstract: TSOP56 FOOTPRINT S29GL064N Numonyx M29W640GS hardware protection of S29GL064N Numonyx software and application Spansion Flash M29W640GT SPANSION 16
Text: Migrating to Spansion S29GL-N from Numonyx M29W 32-64 Mb Application Note 1. Introduction This Application Note details how to migrate designs from Numonyx™ 32 Mbit M29W320E and 64 Mbit M29W640G Flash Memory devices to Spansion® 32 Mbit S29GL032N and 64 Mbit S29GL064N MirrorBit®
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S29GL-N
M29W320E
M29W640G
S29GL032N
S29GL064N
S29GL064N application notes
TSOP56 FOOTPRINT
Numonyx
M29W640GS
hardware protection of S29GL064N
Numonyx software and application
Spansion Flash
M29W640GT
SPANSION 16
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asme SA388
Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ
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S29GL-M
S29GL256MS29GL128MS29GL064MS29GL032M
S29GL128MS29GL128N
S29GL256MS29GL256N
S29GLxxxN
00-B-5
S29GL032M
LAA064
asme SA388
gl128m
A2113
S29GL256
E78000
S29GL128N
TSOP56 S29GL128N
sa32sa35
S29GLxxxM
BGA-63
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sa1, NXB
Abstract: PL032J SA182 SA276 SA-194 Pl064j SA178 SA1127 SA216 SA284
Text: S29PL-J 128 / 128 / 64 / 32M ビット（8 / 8 / 4 / 2M x 16 - ビット） CMOS 3.0 V 単一電源， - リード / ライト同時実行， Enhanced VersatileIO 制御 TM フラッシュメモリ S29PL-J Cover Sheet データシート Advance Information
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S29PL-J
S29PL-J
VBK048
PL032J/PL064J
PL127J
PL064J/PL032J
A812006
TSOP56
sa1, NXB
PL032J
SA182
SA276
SA-194
Pl064j
SA178
SA1127
SA216
SA284
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M29DW256G
Abstract: M29dw256 spansion TSOP56
Text: M29DW256G 256-Mbit x16, multiple bank, page, dual boot 3 V supply flash memory Features BGA Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 9 V for fast program (optional) Asynchronous random/page read
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M29DW256G
256-Mbit
32Mbit
96Mbit
M29DW256G
M29dw256
spansion TSOP56
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Untitled
Abstract: No abstract text available
Text: M29DW256G 256-Mbit x16, multiple bank, page, dual boot 3 V supply flash memory Features BGA Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 9 V for fast program (optional) Asynchronous random/page read
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M29DW256G
256-Mbit
TSOP56
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m29dw128g
Abstract: No abstract text available
Text: M29DW128G 128 Mbit 8 Mb x 16, multiple bank, page, dual boot 3 V supply Flash memory Features • Supply voltage – VCC = 2.7 to 3.6 V for program, erase and read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 9 V for fast program (optional) ■ Asynchronous random/page read
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M29DW128G
32-word
m29dw128g
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M29DW128G
Abstract: 55560A B030A
Text: 128Mb: 3V Embedded Parallel NOR Flash Features Micron Parallel NOR Flash Embedded Memory M29DW128G Features • Common flash interface – 64-bit security code • 100,000 program/erase cycles per block • Low power consumption – Standby and automatic standby
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128Mb:
M29DW128G
256-word
32-word
09005aef8507150c
55560A
B030A
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M29DW128G
Abstract: TSOP56 2202H 40XAD
Text: M29DW128G 128-Mbit 8 Mbit x16, multiple bank, page, dual boot 3 V supply flash memory Features • Supply voltage – VCC = 2.7 to 3.6 V for program, erase and read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 9 V for fast program (optional) ■ Asynchronous random/page read
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M29DW128G
128-Mbit
32-word
TSOP56
M29DW128G
TSOP56
2202H
40XAD
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SANDISK NAND ID code
Abstract: No abstract text available
Text: C/ FS TM The Embedded File System User’s Manual V4.04 Micriμm 1290 Weston Road, Suite 306 Weston, FL 33326 USA www.micrium.com Designations used by companies to distinguish their products are often claimed as trademarks. In all instances where Micriμm Press is aware of a trademark claim, the product
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M29dw127
Abstract: No abstract text available
Text: M29DW127G 128-Mbit 8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot 3 V supply flash memory Features Supply voltage – VCC = 2.7 to 3.6 V for program, erase and read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)
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M29DW127G
128-Mbit
32-word
M29dw127
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M29DW127G
Abstract: M29DW M29dw127
Text: M29DW127G 128-Mbit 8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot 3 V supply flash memory Features Supply voltage – VCC = 2.7 to 3.6 V for program, erase and read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)
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M29DW127G
128-Mbit
32-word
M29DW127G
M29DW
M29dw127
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M29DW256
Abstract: 0C60000 06FFFFF 013F 099FFFF
Text: 256Mb: 3V Embedded Parallel NOR Flash Features Micron Parallel NOR Flash Embedded Memory M29DW256G X16 Multiple Bank, Page, Dual Boot 3V Supply Flash Memory Features • VPP/WP# pin for fast program and write – Protects the four outermost parameter blocks
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256Mb:
M29DW256G
32-word
256-word
09005aef84ecabef
M29DW256
0C60000
06FFFFF
013F
099FFFF
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M29W128GL
Abstract: M29W128GH
Text: M29W128GH M29W128GL 128-Mbit 16 Mbit x8 or 8 Mbit x16, page, uniform block 3 V supply flash memory Features • ■ Supply voltage – VCC = 2.7 to 3.6 V for program, erase and read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)
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M29W128GH
M29W128GL
128-Mbit
64-byte
M29128GH/L:
Kbytes/64
M29W128GL
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M29W128GL
Abstract: M29W128GH70 M29W128G M29W128GL7
Text: M29W128GH M29W128GL 128-Mbit 16 Mbit x8 or 8 Mbit x16, page, uniform block 3 V supply flash memory Features BGA Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)
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M29W128GH
M29W128GL
128-Mbit
64-byte
M29128GH/L:
Kbytes/64
M29W128GL
M29W128GH70
M29W128G
M29W128GL7
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M29DW127G
Abstract: No abstract text available
Text: M29W128GH M29W128GL 128-Mbit 16 Mbit x8 or 8 Mbit x16, page, uniform block 3 V supply flash memory Features BGA Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)
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M29W128GH
M29W128GL
128-Mbit
64-byte
M29128GH/L:
Kbytes/64
M29DW127G
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M29W256GH
Abstract: m29w256gh70 M29W256GL M29W256GH70N M29W256G M29W256 Q001 M29DW127G 70n6 0A50000
Text: M29W256GH M29W256GL 256-Mbit 32 Mbit x8 or 16 Mbit x16, page, uniform block 3 V supply flash memory Features BGA Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)
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M29W256GH
M29W256GL
256-Mbit
64-byte
M29256GH/L:
Kbytes/64
M29W256GH,
m29w256gh70
M29W256GL
M29W256GH70N
M29W256G
M29W256
Q001
M29DW127G
70n6
0A50000
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M29W256GH
Abstract: M29W256G m29w256gl M29W256 M29W m29w256gh70
Text: M29W256GH M29W256GL 256-Mbit 32 Mbit x8 or 16 Mbit x16, page, uniform block 3 V supply flash memory Features BGA Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)
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M29W256GH
M29W256GL
256-Mbit
64-byte
M29W256G:
Kbytes/64
M29W256G
m29w256gl
M29W256
M29W
m29w256gh70
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m29w256g
Abstract: M29W256GL M29W256 M29W256GH70N M29W256GH
Text: M29W256GH M29W256GL 256-Mbit 32 Mbit x8 or 16 Mbit x16, page, uniform block 3 V supply flash memory Features BGA Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)
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M29W256GH
M29W256GL
256-Mbit
64-byte
M29W256G:
Kbytes/64
m29w256g
M29W256GL
M29W256
M29W256GH70N
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M29W128GL7
Abstract: M29W128GL 2221h
Text: M29W128GH M29W128GL 128-Mbit 16 Mbit x8 or 8 Mbit x16, page, uniform block 3 V supply flash memory Features BGA Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)
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M29W128GH
M29W128GL
128-Mbit
64-byte
M29128GH/L:
Kbytes/64
M29W128GL7
M29W128GL
2221h
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10C0000
Abstract: No abstract text available
Text: M29W256GH M29W256GL 256-Mbit 32 Mbit x8 or 16 Mbit x16, page, uniform block 3 V supply flash memory Features BGA Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)
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M29W256GH
M29W256GL
256-Mbit
64-byte
TBGA64
M29W256GH,
10C0000
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FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178
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GP-20)
FSQ510 Equivalent
BTA12 6008
bta16 6008
ZIGBEE interface with AVR ATmega16
Precision triac control thermostat
thyristor t 558 f eupec
gw 5819 diode
transistor a564
A564 transistor
BSM25GP120 b2
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