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    70N6 Search Results

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    70N6 Price and Stock

    Vishay Siliconix SIHH070N60EF-T1GE3

    MOSFET N-CH 600V 36A PPAK 8 X 8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHH070N60EF-T1GE3 Reel 3,000 3,000
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    STMicroelectronics STD70N6F3

    MOSFET N-CH 60V 70A DPAK
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    DigiKey STD70N6F3 Cut Tape 2,312 1
    • 1 $1.98
    • 10 $1.646
    • 100 $1.3097
    • 1000 $0.94031
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    ARCOTEK M29W320DT-70N6T

    FLASH 32MB TOP BOOT BLK
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    DigiKey M29W320DT-70N6T Reel 1,415 50
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    STMicroelectronics STW70N60M2

    MOSFET N-CH 600V 68A TO247
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    DigiKey STW70N60M2 Tube 812 1
    • 1 $9.25
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    Avnet Americas STW70N60M2 Bulk 16 Weeks, 4 Days 1
    • 1 $13.3
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    STW70N60M2 Tube 16 Weeks 600
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    Mouser Electronics STW70N60M2 1,190
    • 1 $10.33
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    TME STW70N60M2 1
    • 1 $12.57
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    Rochester Electronics LLC FCP170N60

    MOSFET N-CH 600V 22A TO220-3
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    DigiKey FCP170N60 Bulk 800 85
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    • 100 $3.56
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    70N6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IXKH 70N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 70 A VDSS = 600 V RDS on max = 0.045 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD (IXKH) D G G D S S  D(TAB) Features MOSFET Conditions


    Original     		PDF 70N60C5 O-247

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET IXFN 70N60Q2 VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr = 600 V = 70 A ≤ 80 mΩ Ω ≤ 250 ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings


    Original     		PDF 70N60Q2 OT-227 E153432

    70n60

    Abstract: IXFB70N60Q2
    Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 70N60Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 600 V ID25 = 70 A Ω RDS on = 80 mΩ ≤ 250 ns trr PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		PDF 70N60Q2 264TM 728B1 70n60 IXFB70N60Q2

    Untitled

    Abstract: No abstract text available
    Text: IXKH 70N60C5 CoolMOS 1 Power MOSFET ID25 = 70 A VDSS = 600 V RDS on) max = 0.045 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S fl D(TAB) S Features MOSFET Symbol Conditions VDSS TVJ = 25°C


    Original     		PDF 70N60C5 O-247 20090209d

    IXFB

    Abstract: IXFB70N60Q2
    Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 70N60Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 600 V ID25 = 70 A Ω RDS on = 80 mΩ ≤ 250 ns trr PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		PDF 70N60Q2 264TM 728B1 065B1 123B1 IXFB IXFB70N60Q2

    DSA003710

    Abstract: No abstract text available
    Text: IXKH 70N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 70 A VDSS = 600 V RDS on max = 0.045 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S q D(TAB) S Features MOSFET Conditions


    Original     		PDF 70N60C5 O-247 20070625a DSA003710

    70N60C5

    Abstract: 70n60 IXKH70N60C5
    Text: IXKH 70N60C5 CoolMOS 1 Power MOSFET ID25 = 70 A VDSS = 600 V RDS on) max = 0.045 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S q D(TAB) S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings


    Original     		PDF 70N60C5 O-247 20090209d 70N60C5 70n60 IXKH70N60C5

    70n60

    Abstract: 70n6 IXFB70N60Q2
    Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 70N60Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 600 V ID25 = 70 A Ω RDS on = 80 mΩ ≤ 250 ns trr PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		PDF 70N60Q2 264TM 728B1 70n60 70n6 IXFB70N60Q2

    123B16

    Abstract: IXFN70N60Q2 DS99029A
    Text: HiPerFETTM Power MOSFET IXFN 70N60Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 600 V ID25 = 70 A Ω RDS on = 80 mΩ ≤ 250 ns trr Preliminary Data Sheet miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions


    Original     		PDF 70N60Q2 OT-227 E153432 728B1 065B1 123B1 123B16 IXFN70N60Q2 DS99029A

    70n60

    Abstract: No abstract text available
    Text: IXKH 70N60C5 Advanced Technical Information ID25 = 70 A = 600 V VDSS RDS on max = 0.045 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D S S D (TAB) Features MOSFET Conditions VDSS TVJ = 25°C


    Original     		PDF 70N60C5 O-247 70n60

    IXKH70N60C5

    Abstract: 70N60C5 70n60 TO-247 SD 431
    Text: IXKH 70N60C5 CoolMOS 1 Power MOSFET ID25 = 70 A VDSS = 600 V RDS on) max = 0.045 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S q D(TAB) S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings


    Original     		PDF 70N60C5 O-247 20080310b IXKH70N60C5 70N60C5 70n60 TO-247 SD 431

    Untitled

    Abstract: No abstract text available
    Text: IXKH 70N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 70 A VDSS = 600 V RDS on max = 0.045 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S q D(TAB) S Features MOSFET Conditions


    Original     		PDF 70N60C5 O-247 20070625a

    Untitled

    Abstract: No abstract text available
    Text: 70N60M2 N-channel 600 V, 0.03 Ω typ., 68 A MDmesh II Plus low Qg Power MOSFET in a TO-247 package Datasheet − production data Features Order code VDS @ TJmax RDS on max ID 70N60M2 650 V 0.040 Ω 68 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation


    Original     		PDF STW70N60M2 O-247 O-247 DocID024327

    70n60

    Abstract: No abstract text available
    Text: 70N60M2 N-channel 600 V, 0.031 Ω typ., 68 A MDmesh II Plus low Qg Power MOSFET in a TO-247 package Datasheet − preliminary data Features Order code VDS @ TJmax RDS on max ID 70N60M2 650 V 0.040 Ω 68 A • Extremely low gate charge 2 • Lower RDS(on) x area vs previous generation


    Original     		PDF STW70N60M2 O-247 O-247 DocID024327 70n60

    AM29F010

    Abstract: 29F010 amd am29f010 CROSS REFERENCE programmer for 29F010 NEXFLASH 29f010 PLCC 29F010 DIP 45p6 Flash cross reference 90K-1
    Text: NX29F010 1Mbit 128Kx8 5V-only Sector Flash Cross Reference Guide AMD n/a AM29F010-45JC AM29F010-55JC AM29F010-70JC AM29F010-90JC / 120JC n/a AM29F010-45EC AM29F010-55EC AM29F010-70EC AM29F010-90EC / 120EC AM29F010-45PC AM29F010-55PC AM29F010-70PC AM29F010-90PC / 120PC


    Original     		PDF NX29F010 128Kx8) AM29F010-45JC AM29F010-55JC AM29F010-70JC AM29F010-90JC 120JC AM29F010-45EC AM29F010-55EC AM29F010-70EC AM29F010 29F010 amd am29f010 CROSS REFERENCE programmer for 29F010 NEXFLASH 29f010 PLCC 29F010 DIP 45p6 Flash cross reference 90K-1

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2