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    SPA11 Price and Stock

    ams OSRAM Group GD-QSSPA1.14-UOVK-W4-1-350-R18

    LED OSCONIQ P 3030 BLU 449NM SMD
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    DigiKey GD-QSSPA1.14-UOVK-W4-1-350-R18 Cut Tape 4,760 1
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    GD-QSSPA1.14-UOVK-W4-1-350-R18 Reel 4,500 900
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    ams OSRAM Group GB-QSSPA1.13-HYJX-B1B4-1-350-R18

    67000
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    GB-QSSPA1.13-HYJX-B1B4-1-350-R18 Reel 900 900
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    ams OSRAM Group GT-QSSPA1.13-LSLU-T1T6-1-350-R18

    67000
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    GT-QSSPA1.13-LSLU-T1T6-1-350-R18 Digi-Reel 1,770 1
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    GT-QSSPA1.13-LSLU-T1T6-1-350-R18 Reel 900 900
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    ams OSRAM Group GY-QSSPA1.13-KSKU-5F5G-1-350-R18

    LED OSCONIQ P 3030 YELLOW SMD
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    DigiKey GY-QSSPA1.13-KSKU-5F5G-1-350-R18 Cut Tape 1,370 1
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    GY-QSSPA1.13-KSKU-5F5G-1-350-R18 Digi-Reel 1,370 1
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    GY-QSSPA1.13-KSKU-5F5G-1-350-R18 Reel 900 900
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    ams OSRAM Group GV-QSSPA1.13-JZKZ-V1V6-1-350-R18

    67000
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    DigiKey GV-QSSPA1.13-JZKZ-V1V6-1-350-R18 Digi-Reel 1,321 1
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    GV-QSSPA1.13-JZKZ-V1V6-1-350-R18 Cut Tape 1,321 1
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    GV-QSSPA1.13-JZKZ-V1V6-1-350-R18 Reel 900 900
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    Find more SPA11 price and stock on Findchips.com

    SPA11 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPA-1118 RF Micro Devices RF Amplifiers, RF/IF and RFID, IC AMP HBT GAAS 850MHZ 8-SOIC Original PDF
    SPA-1118 Sirenza Microdevices 850 MHz 1 Watt Power Amp with Active Bias Original PDF
    SPA-1118 Sirenza Microdevices 850 MHz 1 Watt Power Amplifier with Active Bias Original PDF
    SPA-1118 Stanford Microdevices 850 MHz 1 watt power amplifier with active bias. Original PDF
    SPA-1118Z RF Micro Devices RF Amplifiers, RF/IF and RFID, IC AMP HBT GAAS 850MHZ 8-SOIC Original PDF
    SPA-1118Z Sirenza Microdevices 850 MHz 1 Watt Power Amplifier with Active Bias Original PDF
    SPA11N60C2 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220FP, RDSon=0.38 ?, 5.5A Original PDF
    SPA11N60C2 Infineon Technologies Cool MOS Power Amp., 650V 11A 33W, MOS-FET N-Channel enhanced Original PDF
    SPA11N60C3 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; VDS (max): 600.0 V; Package: TO-220 FullPAK; RDS(ON) @ TJ=25°C VGS=10: 380.0 mOhm; ID(max) @ TC=25°C: 11.0 A; IDpuls (max): 33.0 A; Original PDF
    SPA11N60C3 Infineon Technologies Cool MOS Power Amp., 650V 11A 33W, MOS-FET N-Channel enhanced Original PDF
    SPA11N60C3 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220FP, RDSon=0.38 ?, 5.5A Original PDF
    SPA11N60C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPA11N60C3E8152 Infineon Technologies Transistor Mosfet N-CH 600V 0.021A 3 pin SOT-23 T/R Original PDF
    SPA11N60C3IN Infineon Technologies MOSFET N-CH 650V 11A TO220-3-31 Original PDF
    SPA11N60C3XKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 11A TO220-3 Original PDF
    SPA11N60CFD Infineon Technologies CoolMOS Power Transistor Original PDF
    SPA11N60CFDXKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 11A TO220-3 Original PDF
    SPA11N65C3 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; VDS (max): 650.0 V; Package: TO-220 FullPAK; RDS(ON) @ TJ=25°C VGS=10: 380.0 mOhm; ID(max) @ TC=25°C: 11.0 A; IDpuls (max): 33.0 A; Original PDF
    SPA11N65C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPA11N65C3XKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 11A TO-220 Original PDF

    SPA11 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    11N60C3

    Abstract: transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3
    Text: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated


    Original     		PDF SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 11N60C3 transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3

    Untitled

    Abstract: No abstract text available
    Text: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic


    Original     		PDF SPA1118Z 850MHz 850MHz SPA1118Z MCH18 100nH, 1008HQ

    SPA11N60C2

    Abstract: AN-TO220-3-31-01 11N60C2 11N60C GPT09301 SDP06S60
    Text: Preliminary data SPA11N60C2 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V •=Periodic avalanche rated R DS on 0.38 Ω • Extreme dv/dt rated


    Original     		PDF SPA11N60C2 P-TO220-3-31 P-TO220-3-31 Q67040-S4332 11N60C2 SPA11N60C2 AN-TO220-3-31-01 11N60C2 11N60C GPT09301 SDP06S60

    11n80c3

    Abstract: SPA11N80C3
    Text: SPP11N80C3 SPA11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP11N80C3 SPA11N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4438 11N80C3 11n80c3 SPA11N80C3

    11n60c3

    Abstract: transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3 E8185
    Text: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220


    Original     		PDF SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 P-TO220-3-31 PG-TO220FP PG-TO262 PG-TO220 PG-TO-220-3-31 11n60c3 transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3

    SPA11N80C3

    Abstract: No abstract text available
    Text: SPA11N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated


    Original     		PDF SPA11N80C3 P-TO220-3-31 11N80C3 P-TO220-3-31 Q67040-S4439 SPA11N80C3

    11n80c3

    Abstract: No abstract text available
    Text: SPA11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPA11N80C3 PG-TO220-3 11N80C3 11n80c3

    11n60c3

    Abstract: 11N60C SPA11N60C3 equivalent SPA11N60C3E8185 11N60 E8185 SPP11N60C3 SPA11N60C3 SPD06S60 transistor 11n60c3
    Text: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220


    Original     		PDF SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 11n60c3 11N60C SPA11N60C3 equivalent SPA11N60C3E8185 11N60 E8185 SPP11N60C3 SPD06S60 transistor 11n60c3

    11n60c3

    Abstract: SPA11N60C3E8185 11N60C SPA11N60C3 equivalent SPA11N60C3 11N60 SPI11N60C3 transistor 11n60c3 Q67040-S4395 SPP11N60C3
    Text: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220


    Original     		PDF SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 11n60c3 SPA11N60C3E8185 11N60C SPA11N60C3 equivalent 11N60 SPI11N60C3 transistor 11n60c3 Q67040-S4395 SPP11N60C3

    11n60cfd

    Abstract: JESD22 PG-TO220-3-31 SP000216317 SPA11N60CFD D8172
    Text: SPA11N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.44 Ω 11 A I D1) • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		PDF SPA11N60CFD PG-TO220-3-31 O-220-3-31 SP000216317 11N60CFD 11n60cfd JESD22 PG-TO220-3-31 SP000216317 SPA11N60CFD D8172

    11N80C3

    Abstract: No abstract text available
    Text: SPP11N80C3 SPA11N80C3 Final data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω 11 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31


    Original     		PDF SPP11N80C3 SPA11N80C3 P-TO220-3-31 P-TO220-3-1 Q67040-S4438 11N80C3 11N80C3

    11N65C3

    Abstract: 11N65C 11n65 SPA11N65C3 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 7A SP000216318 SPP11N65C3 SPI11N65C3 11n6
    Text: SPP11N65C3,SPA11N65C3 SPI11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 V DS 650 V RDS on 0.38 Ω ID 11 A PG-TO220FP PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP11N65C3 SPA11N65C3 SPI11N65C3 PG-TO262 PG-TO220FP PG-TO220 SPP11N65C3 Q67040-S4557 11N65C3 11N65C3 11N65C 11n65 SPA11N65C3 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 7A SP000216318 SPI11N65C3 11n6

    11N65C3

    Abstract: No abstract text available
    Text: SPP11N65C3,SPA11N65C3 SPI11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 V DS 650 V RDS on 0.38 Ω ID 11 A PG-TO220FP PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP11N65C3 SPA11N65C3 SPI11N65C3 PG-TO262 PG-TO220FP PG-TO220 SPP11N65C3 Q67040-S4557 11N65C3 11N65C3

    11N60C

    Abstract: 11N60CFD
    Text: SPA11N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.44 Ω 11 A I D1) • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		PDF SPA11N60CFD PG-TO220-3-31 O-220-3-31 SP000216317 11N60CFD 11N60C 11N60CFD

    Untitled

    Abstract: No abstract text available
    Text: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.38 Ω •=Periodic avalanche rated ID


    Original     		PDF SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3

    11N65C3

    Abstract: 11n65 11N65C SPP11N65C3 Q67040-S4554 MIL-STD-750-1038 Q67040-S4561 AN-TO220-3-31-01 TRANSISTOR SMD MARKING CODE 7A SPA11N65C3
    Text: SPP11N65C3, SPA11N65C3 SPI11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 650 V RDS on 0.38 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated P-TO262-3-1 P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP11N65C3, SPA11N65C3 SPI11N65C3 P-TO262-3-1 P-TO220-3-31 P-TO220-3-1 SPP11N65C3 Q67040-S4557 11N65C3 11n65 11N65C SPP11N65C3 Q67040-S4554 MIL-STD-750-1038 Q67040-S4561 AN-TO220-3-31-01 TRANSISTOR SMD MARKING CODE 7A SPA11N65C3

    Q67040-S4408

    Abstract: 11N60C AR1010
    Text: SPA11N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated


    Original     		PDF SPA11N60C3 P-TO220-3-31 11N60C3 P-TO220-3-31 Q67040-S4408 Q67040-S4408 11N60C AR1010

    11n60c2

    Abstract: transistor 11n60c2 spa 11n60c2
    Text: Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated ID • Extreme dv/dt rated


    Original     		PDF SPP11N60C2, SPB11N60C2 SPA11N60C2 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP11N60C2 11n60c2 transistor 11n60c2 spa 11n60c2

    11N60C3

    Abstract: transistor 11n60c3
    Text: SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO263-3-2


    Original     		PDF SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 11N60C3 transistor 11n60c3

    11N60C3

    Abstract: transistor 11n60c3
    Text: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated


    Original     		PDF SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 11N60C3 transistor 11n60c3

    11N80C3

    Abstract: 11n80c
    Text: SPP11N80C3 SPA11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP11N80C3 SPA11N80C3 P-TO220-3-31 P-TO-220-3-31: P-TO220-3-1 Q67040-S4438 11N80C3 11n80c

    SP000216312

    Abstract: 11N6
    Text: SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3 PG-TO220 PG-TO-220-3-31: SPI11N60C3 SP000216312 11N6

    transistor 11n60c3

    Abstract: SPP11N60C3 Q67040-S4408 11N60C3 11N60C
    Text: SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 PG-TO-220-3-31: SPI11N60C3 transistor 11n60c3 Q67040-S4408 11N60C3 11N60C

    11n80c3

    Abstract: No abstract text available
    Text: SPA11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPA11N80C3 PG-TO220-3 11N80C3 11n80c3