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    Micro Commercial Components MSJPF11N65-BP

    MOSFET N-CH 650V 11A TO220F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MSJPF11N65-BP Tube 8,441 1
    • 1 $2.96
    • 10 $2.96
    • 100 $1.3254
    • 1000 $0.9899
    • 10000 $0.9
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    Micro Commercial Components MSJP11N65A-BP

    N-CHANNEL MOSFET,TO-220
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    DigiKey MSJP11N65A-BP Tube 4,971 1
    • 1 $2.72
    • 10 $2.72
    • 100 $1.2066
    • 1000 $0.89612
    • 10000 $0.80075
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    Micro Commercial Components MSJPF11N65A-BP

    N-CHANNEL MOSFET,TO-220F
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    DigiKey MSJPF11N65A-BP Tube 4,827 1
    • 1 $2.41
    • 10 $2.41
    • 100 $1.0822
    • 1000 $0.92312
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    Goford Semiconductor GC11N65D5

    N650V, 11A,RD<360M@10V,VTH2.5V~4
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    DigiKey GC11N65D5 Digi-Reel 4,742 1
    • 1 $2.47
    • 10 $1.586
    • 100 $1.0834
    • 1000 $0.79952
    • 10000 $0.74145
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    GC11N65D5 Cut Tape 4,742 1
    • 1 $2.47
    • 10 $1.586
    • 100 $1.0834
    • 1000 $0.79952
    • 10000 $0.74145
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    Micro Commercial Components MSJU11N65A-TP

    N-CHANNEL MOSFET, DPAK
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    DigiKey MSJU11N65A-TP Digi-Reel 4,203 1
    • 1 $2.5
    • 10 $1.607
    • 100 $1.0989
    • 1000 $0.81159
    • 10000 $0.81159
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    MSJU11N65A-TP Cut Tape 4,203 1
    • 1 $2.5
    • 10 $1.607
    • 100 $1.0989
    • 1000 $0.81159
    • 10000 $0.81159
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    MSJU11N65A-TP Reel 2,500 2,500
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    • 10000 $0.7125
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    Mouser Electronics MSJU11N65A-TP
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    11N65 Datasheets Context Search

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    11N65M5

    Abstract: 11n65 STB11N65M5
    Text: 11N65M5, 11N65M5, 11N65M5, 11N65M5, 11N65M5 N-channel 650 V, 0.43 Ω typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages Datasheet — production data Features TAB TAB Order codes VDSS @ TJmax RDS on max 2


    Original     		STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 O-220FP, O-220 STB11N65M5 STD11N65M5 STF11N65M5 11N65M5 11n65 PDF

    ntc 5d-9

    Abstract: analog delay line schematic 11n65c3 AP3101 pc817c APPLICATION CIRCUITS FR107 SMD pq32 24v Advanced Analog Circuits B20100On AZ431
    Text: BCD Semi Ltd Co. AP3101 Demo Board Part Number: DB-AP3101-120W Seriers Number: V1.0-001 Content: 1. Description 2. Specifications 3. Schematics of the PCB 4. PCB Layout 5. PCB Dimensions 6. Photo View of the Demo Board 7. BOM 8. Test Result PROPRIETARY & CONFIDENTIAL


    Original     		AP3101 DB-AP3101-120W 5V-265V 200mV ntc 5d-9 analog delay line schematic 11n65c3 pc817c APPLICATION CIRCUITS FR107 SMD pq32 24v Advanced Analog Circuits B20100On AZ431 PDF

    11N65M5

    Abstract: STB11N65M5 STF11N65M5 stf11n65 11n65 STP11N65M5 STD11N65M5 STMicroelectronics marking code date diode
    Text: 11N65M5, 11N65M5 11N65M5, 11N65M5 N-channel 650 V, 0.43 Ω, 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220 packages Preliminary data Features TAB TAB Order code VDSS @ TJmax RDS on max 710 V < 0.48 Ω 2 ID 11N65M5 DPAK D2PAK


    Original     		STB11N65M5, STD11N65M5 STF11N65M5, STP11N65M5 O-220FP O-220 STB11N65M5 STF11N65M5 STP11N65M5 11N65M5 stf11n65 11n65 STMicroelectronics marking code date diode PDF

    90W ac adapter schematic

    Abstract: npn 13001 90w flyback 90W laptop adapter 90W ac power adapter schematic TRIAC 13001 1W ZENER DIODE 90V AP1661 AP4310 AP3101 AP1661 WT210
    Text: BCD Semi Ltd Co. 90W AP3101+AP1661 Demo Board Manual Content: 1. Description 2. Specifications 3. Schematics of the PCB 4. PCB Layout 5. Photo View of the Demo Board 6. PCB Dimensions 7. BOM 8. Test Result PROPRIETARY & CONFIDENTIAL ADVANCED ANALOG CIRCUITS CORPORATION


    Original     		AP3101 AP1661 100mV) 300mV 100mV 90W ac adapter schematic npn 13001 90w flyback 90W laptop adapter 90W ac power adapter schematic TRIAC 13001 1W ZENER DIODE 90V AP1661 AP4310 AP3101 AP1661 WT210 PDF

    11N65C3

    Abstract: 11N65C 11n65 SPA11N65C3 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 7A SP000216318 SPP11N65C3 SPI11N65C3 11n6
    Text: 11N65C3,11N65C3 11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 V DS 650 V RDS on 0.38 Ω ID 11 A PG-TO220FP PG-TO220 • Extreme dv/dt rated


    Original     		SPP11N65C3 SPA11N65C3 SPI11N65C3 PG-TO262 PG-TO220FP PG-TO220 SPP11N65C3 Q67040-S4557 11N65C3 11N65C3 11N65C 11n65 SPA11N65C3 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 7A SP000216318 SPI11N65C3 11n6 PDF

    11N65C3

    Abstract: No abstract text available
    Text: 11N65C3,11N65C3 11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 V DS 650 V RDS on 0.38 Ω ID 11 A PG-TO220FP PG-TO220 • Extreme dv/dt rated


    Original     		SPP11N65C3 SPA11N65C3 SPI11N65C3 PG-TO262 PG-TO220FP PG-TO220 SPP11N65C3 Q67040-S4557 11N65C3 11N65C3 PDF

    11N65C3

    Abstract: 11n65 11N65C SPP11N65C3 Q67040-S4554 MIL-STD-750-1038 Q67040-S4561 AN-TO220-3-31-01 TRANSISTOR SMD MARKING CODE 7A SPA11N65C3
    Text: 11N65C3, 11N65C3 11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 650 V RDS on 0.38 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated P-TO262-3-1 P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated


    Original     		SPP11N65C3, SPA11N65C3 SPI11N65C3 P-TO262-3-1 P-TO220-3-31 P-TO220-3-1 SPP11N65C3 Q67040-S4557 11N65C3 11n65 11N65C SPP11N65C3 Q67040-S4554 MIL-STD-750-1038 Q67040-S4561 AN-TO220-3-31-01 TRANSISTOR SMD MARKING CODE 7A SPA11N65C3 PDF

    11n65

    Abstract: No abstract text available
    Text: Preliminary Datasheet POWER FACTOR CORRECTION CONTROLLER General Description Features The AP1661 is an active power factor control IC which is designed mainly for use as pre-converter in electronic ballast, AC-DC adapters and off-line SMPS applications. •


    Original     		AP1661 AP1661 600mA 800mA 11n65 PDF

    Untitled

    Abstract: No abstract text available
    Text: 11N65C3, 11N65C3 11N65C3 Preliminary data Cool MOS Power Transistor Feature VDS @ Tjmax 820 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO262-3-1 P-TO220-3-31


    Original     		SPP11N65C3, SPA11N65C3 SPI11N65C3 P-TO262-3-1 P-TO220-3-31 P-TO220-3-1 SPP11N65C3 Q67040-S4557 11N65C3 PDF

    11n65

    Abstract: Q67040-S4554 Q67040-S4557 11N65C3 SPP11N65C3
    Text: 11N65C3,11N65C3 11N65C3 Cool MOS Power Transistor Feature VDS @ Tjmax 820 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262-3-1 PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated


    Original     		SPP11N65C3 SPA11N65C3 SPI11N65C3 PG-TO262-3-1 PG-TO220-3-31 PG-TO220-3-1 SPI11N65C3 11N65C3 11n65 Q67040-S4554 Q67040-S4557 PDF

    11N65C3

    Abstract: 11n65
    Text: 11N65C3,11N65C3 11N65C3 Cool MOS Power Transistor Feature VDS @ Tjmax 820 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262-3-1 PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated


    Original     		SPP11N65C3 SPA11N65C3 SPI11N65C3 PG-TO262-3-1 PG-TO220-3-31 PG-TO220-3-1 SPI11N65C3 11N65C3 11n65 PDF

    Untitled

    Abstract: No abstract text available
    Text: 11N65C3,11N65C3 11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO262 • Periodic avalanche rated V DS 650 V RDS on 0.38 Ω ID 11 A PG-TO220FP PG-TO220 • Extreme dv/dt rated


    Original     		SPP11N65C3 SPA11N65C3 SPI11N65C3 PG-TO262 PG-TO220FP PG-TO220 SPP11N65C3 Q67040-S4557 11N65C3 PDF

    ap1661p

    Abstract: 1661M-G1 11n65 11n65c3 AP1661 AP1661M-G1 11N65C 1661m AP1661M-E1 AP1661P-G1
    Text: Data Sheet POWER FACTOR CORRECTION CONTROLLER General Description Features The AP1661 is an active power factor control IC which is designed mainly for use as pre-converter in electronic ballast, AC-DC adapters and off-line SMPS applications. • · · · The AP1661 includes an internal start-up timer for


    Original     		AP1661 AP1661 600mA 800mA ap1661p 1661M-G1 11n65 11n65c3 AP1661M-G1 11N65C 1661m AP1661M-E1 AP1661P-G1 PDF

    1N6528

    Abstract: M25UFG RA641 58A2 1N6535 RA644 11n65 RM109 M50FG RM117
    Text: T " 0 3 - 0 9 T ' O S - f t I INCH-PQUND I MI L -S-19500/577 5 Ap r i l 1989 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE TYPES 1N6528 THROUGH 1N6535 JANTX, JANTXV, AND JANS This specification is approved for use by all Depart­


    OCR Scan     		MIL-S-19500/577 1N6528 1N6535 MIL-S-19500. RA642 RA645 RM121 RM131 M60FG M60UFG M25UFG RA641 58A2 RA644 11n65 RM109 M50FG RM117 PDF

    11N65M5

    Abstract: No abstract text available
    Text: STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N N-channel 650 V, 0.425 Ω typ., 11 A MDmesh II Power MOSFET in DPAK, TO-220FP, I²PAKFP and TO-220 packages Datasheet — production data Features TAB Order codes RDS on max VDSS @ TJmax 3 ID 1 11N65M5


    Original     		STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N O-220FP, O-220 STF11N65M5 STFI11N65M5 STD11N65M5 O-220FP 11N65M5 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 PDF

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 PDF

    AP1661

    Abstract: 11N65C3 cs 9110 d2 power factor correction boost topology 11N65C mosfet power totem pole CIRCUIT 1N4148 MUR460 mosfet triggering circuit power mosfet triggering circuit
    Text: Application Note 1006 Design of Power Factor Correction Circuit Using AP1661 Prepared by Zhu Shihai System Engineering Department 1. Introduction 2. Product Features The AP1661 is an active power factor control IC which is designed mainly for use as a pre-converter in


    Original     		AP1661 AP1661 600mA 800mA 11N65C3 cs 9110 d2 power factor correction boost topology 11N65C mosfet power totem pole CIRCUIT 1N4148 MUR460 mosfet triggering circuit power mosfet triggering circuit PDF

    AP1661

    Abstract: AP1661MTR-E1 AP1661M-E1 11N65C3 1661m 1661M-G1 schematic SMPS 24V 2.5a ap1661p 11n65 8 dip 6200 smps ic
    Text: Data Sheet POWER FACTOR CORRECTION CONTROLLER General Description Features The AP1661 is an active power factor control IC which is designed mainly for use as pre-converter in electronic ballast, AC-DC adapters and off-line SMPS applications. • · · · The AP1661 includes an internal start-up timer for


    Original     		AP1661 AP1661 600mA 800mA AP1661MTR-E1 AP1661M-E1 11N65C3 1661m 1661M-G1 schematic SMPS 24V 2.5a ap1661p 11n65 8 dip 6200 smps ic PDF

    11N65C3

    Abstract: 11N65C SPI11N65C3 SPP11N65C3 SP000216318 11n65
    Text: 11N65C3,11N65C3 11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 V DS 650 V RDS on 0.38 Ω ID 11 A PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated


    Original     		SPP11N65C3 SPA11N65C3 SPI11N65C3 PG-TO262 PG-TO220-3-31 PG-TO220 SPI11N65C3 PG-TO220 11N65C3 11N65C SP000216318 11n65 PDF

    11n65

    Abstract: 11N65C3 11N65C SPA11N65C3
    Text: 11N65C3,11N65C3 11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262-3 V DS 650 V RDS on 0.38 Ω ID 11 A PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated


    Original     		SPP11N65C3 SPA11N65C3 SPI11N65C3 PG-TO262-3 PG-TO220-3-31 PG-TO220-3-1 SPI11N65C3 11N65C3 11n65 11N65C PDF

    11N65C3

    Abstract: SPP11N65C3 11n65 A O TRANSISTOR SMD MARKING CODE SPA11N65C3 11N65C Q67040-S4561
    Text: 11N65C3,11N65C3 11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262-3-1 V DS 650 V RDS on 0.38 Ω ID 11 A PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated


    Original     		SPP11N65C3 SPA11N65C3 SPI11N65C3 PG-TO262-3-1 PG-TO220-3-31 PG-TO220-3-1 SPI11N65C3 11N65C3 11n65 A O TRANSISTOR SMD MARKING CODE 11N65C Q67040-S4561 PDF

    11N65C3

    Abstract: SPA11N65C3 SPI11N65C3 SPP11N65C3
    Text: 11N65C3,11N65C3 11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 V DS 650 V RDS on 0.38 Ω ID 11 A PG-TO220FP PG-TO220 • Extreme dv/dt rated


    Original     		SPP11N65C3 SPA11N65C3 SPI11N65C3 PG-TO262 PG-TO220FP PG-TO220 SPP11N65C3 Q67040-S4557 11N65C3 11N65C3 SPA11N65C3 SPI11N65C3 PDF

    11N65K3

    Abstract: 11n65 STF11N65K3
    Text: 11N65K3 N-channel 650 V, 0.765 Ω, 11 A, TO-220FP SuperMESH3 Power MOSFET Features Type VDSS RDS on max ID Ptot 11N65K3 650 V < 0.85 Ω 11 A 35 W • 100% avalanche tested ■ Extremely high dv/dt capability 3 1 ■ Gate charge minimized ■ Very low intrinsic capacitances


    Original     		STF11N65K3 O-220FP O-220FP 11N65K3 11n65 STF11N65K3 PDF