POWER MOSFET 4600
Abstract: 1A 700V MOSFET
Text: TSM2N70 700V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM2N70
O-220
O-251
O-252
TSM2N70
POWER MOSFET 4600
1A 700V MOSFET
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N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A
Abstract: n-channel mosfet transistor 18BSC
Text: Preliminary TSM2N70 700V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 7 @ VGS =10V 0.8 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM2N70
O-251
O-252
TSM2N70
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A
n-channel mosfet transistor
18BSC
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Untitled
Abstract: No abstract text available
Text: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation
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TSC5302D
O-251
O-252
TSC5302DCP
TSC5302DCH
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TSC5304D
Abstract: TSC5304DCH TSC5304DCP power transistor Ic 4A NPN to - 251
Text: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC5304D
O-251
O-252
TSC5304D
TSC5304DCH
TSC5304DCP
power transistor Ic 4A NPN to - 251
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Untitled
Abstract: No abstract text available
Text: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation
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TSC5302D
O-251
O-252
TSC5302DCP
TSC5302DCH
TSC53rty
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MA4EX950L-1225
Abstract: MA4EX950L-1225T
Text: MA4EX950L-1225 Low Cost Silicon Double Balanced HMIC Mixer, 700 - 1200 MHz Features • • • • • • SOT-25 Outline 6.5 dB Typical Conversion Loss +3 to +7 dBm LO Drive HMIC IC Process Silicon Low Barrier Schottky Barrier Diodes DC - 400 MHz IF Bandwidth
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MA4EX950L-1225
OT-25
MA4EX950L-1225
MA4EX950L-1225T
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700VV
Abstract: TSC5302D halogen ballast 18BSC TSC5302DCH TSC5302DCP diode marking code 540 transistor B 540
Text: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation
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TSC5302D
O-251
O-252
TSC5302DCP
TSC5302DCH
700VV
TSC5302D
halogen ballast
18BSC
diode marking code 540
transistor B 540
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18BSC
Abstract: TSM2N60 TSM2N60CH TSM2N60CP
Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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TSM2N60
O-220
O-251
O-252
TSM2N60
18BSC
TSM2N60CH
TSM2N60CP
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SOT-251
Abstract: sot251 MA4EX580L-1225T MA4EX580L-1225
Text: MA4EX580L-1225 Low Cost Silicon Double Balanced HMIC HMIC ™ Mixer 4.7 - 6.0 GHz Features • • • • • • SOT-25 Outline 7.6 dB Typical Conversion Loss +3 to +7 dBm LO Drive HMIC™ IC Process Silicon Low Barrier Schottky Diode DC – 1050 MHz IF Bandwidth
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MA4EX580L-1225
OT-25
MA4EX580L-1225
OT-251
OT-25
SOT-251
sot251
MA4EX580L-1225T
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C5 MARKING TRANSISTOR
Abstract: TSC136L NPN Silicon Power Transistor DPAK NPN Transistor 1.5A 400V 18BSC sot251 b09 transistor
Text: TSC136L High Voltage NPN Transistor TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 2A VCE(SAT) Features 0.6V @ IC / IB = 1.5A / 0.5A Block Diagram ● High Voltage ● High Speed Switching
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TSC136L
O-251
O-252
TSC136LCP
TSC136LCH
70pcs
C5 MARKING TRANSISTOR
TSC136L
NPN Silicon Power Transistor DPAK
NPN Transistor 1.5A 400V
18BSC
sot251
b09 transistor
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diode D07-15
Abstract: diode d07 SOT-251 d07 15 58 TSC5302D diode D07-15 30 D07 15 diode marking b2 NPN Silicon Power Transistor DPAK NPN Transistor 1A 400V
Text: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation
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TSC5302D
O-251
O-252
TSC5302DCP
TSC5302DCH
diode D07-15
diode d07
SOT-251
d07 15 58
TSC5302D
diode D07-15 30
D07 15
diode marking b2
NPN Silicon Power Transistor DPAK
NPN Transistor 1A 400V
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TSM4N60CH
Abstract: power mosfet 600v 18BSC ITO-220
Text: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been
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TSM4N60
O-220
ITO-220
O-251
O-252
TSM4N60
TSM4N60CH
power mosfet 600v
18BSC
ITO-220
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5210 diode
Abstract: NPN Silicon Power Transistor DPAK npn transistors 400V low power TSC5304D TSC5304DCH TSC5304DCP C5 MARKING TRANSISTOR L 0814 CW68
Text: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 2.5A / 0.5A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC5304D
O-251
O-252
5210 diode
NPN Silicon Power Transistor DPAK
npn transistors 400V low power
TSC5304D
TSC5304DCH
TSC5304DCP
C5 MARKING TRANSISTOR
L 0814
CW68
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2a 400v mosfet to-251
Abstract: 600V 2A MOSFET N-channel MOSFET 400V TO-220 2a 400v mosfet marking code C5 N-Channel mosfet 600v 1a SOT c5 87 p channel mosfet 100v pin diagram of MOSFET 435 M dpak
Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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TSM2N60
O-220
O-251
O-252
TSM2N60
2a 400v mosfet to-251
600V 2A MOSFET N-channel
MOSFET 400V TO-220
2a 400v mosfet
marking code C5
N-Channel mosfet 600v 1a
SOT c5 87
p channel mosfet 100v
pin diagram of MOSFET
435 M dpak
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TO 220 Package High current N CHANNEL MOSFET
Abstract: mosfet 600V 100A TSM4N60CH n-channel mosfet transistor to-251 TO252 18BSC ITO-220 TSM4N60CZ TO-252 N-channel power MOSFET
Text: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been
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TSM4N60
O-220
ITO-220
O-251
O-252
TSM4N60
TO 220 Package High current N CHANNEL MOSFET
mosfet 600V 100A
TSM4N60CH
n-channel mosfet transistor
to-251
TO252
18BSC
ITO-220
TSM4N60CZ
TO-252 N-channel power MOSFET
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SOT-251
Abstract: MA4EX370L-1225 MA4EX370L-1225T sot251
Text: MA4EX370L-1225 Low Cost Silicon Double Balanced HMIC HMIC ™ Mixer 3.0 - 4.0 GHz Features • • • • • • SOT-25 Outline 7.5 dB Typical Conversion Loss +3 to +7 dBm LO Drive HMIC™ IC Process Silicon Low Barrier Schottky Diode DC – 1050 MHz IF Bandwidth
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MA4EX370L-1225
OT-25
MA4EX370L-1225
SOT-251
MA4EX370L-1225T
sot251
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TSM1N60LCP
Abstract: 18BSC TSM1N60L TSM1N60LCH Mosfet MARKING A1 A07 mosfet sot251
Text: TSM1N60L 600V N-Channel Power MOSFET TO-252 PRODUCT SUMMARY TO-251 Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 600 12 @ VGS =10V 1 General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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TSM1N60L
O-252
O-251
TSM1N60L
TSM1N60LCP
18BSC
TSM1N60LCH
Mosfet MARKING A1
A07 mosfet
sot251
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SOT-252 20v
Abstract: N-Channel mosfet 600v 1a U26S 25CC TSM2N60 TSM2N60CH TSM2N60CP marking code 749 diode BBC u035
Text: $ TAIW AN TSM2N60 SEMICONDUCTOR 600V N-Channei Power MOSFET pb RoHS C O M P L IA N C E TO-251 TO-252 (DPAK) (IPAK) Jü F à P in D e f in it io n : 1. G ate 2. Drain 3. Source PRODUCT SUM M ARY V DS (V) R D S (o n )(Û ) I d (A) 6Û0 5 @ Vcs=10V 1 T 7V T
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TSM2N60
O-220
O-251
O-252
TSM2N60
SOT-252 20v
N-Channel mosfet 600v 1a
U26S
25CC
TSM2N60CH
TSM2N60CP
marking code 749
diode BBC
u035
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Untitled
Abstract: No abstract text available
Text: MA4EX180L-1225 M /A -C O M Silicon Double Balanced HMIC Mixer 1300 - 1900 MHz Features • • • • • • /M*KOV1 ^ W F F & Microwave Products SOT-25 Outline Low Cost Miniature Plastic Package Low Conversion Loss: 6.5 dB at 1550 MHz 7.5 dB at 1800 MHz
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MA4EX180L-1225
OT-25
MA4EX180L-1225
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sot251
Abstract: No abstract text available
Text: MA4EX240L-1225 M /A -C O M Silicon Double Balanced HMIC Mixer 1700 - 2500 MHz Features • • • • • • /M * K O V 1 ^ W F F & Microwave Products SOT-25 Outline Low Cost Miniature Plastic Package Low Conversion Loss: 6.4 dB at 2100 MHz 7.4 dB at 2400 MHz
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MA4EX240L-1225
OT-25
MA4EX240L-1225
sot251
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