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    SOT23 S07 Search Results

    SOT23 S07 Result Highlights (1)

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    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation

    SOT23 S07 Datasheets Context Search

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    WMP7032

    Abstract: WT-2307
    Text: WMP7032 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT - 3 AMPERS 1 DRAIN SOUCE VOLTAGE - 20 VOLTAGE GATE Features: 2 SOURCE *Super high dense cell design for low Ros ON R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V


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    PDF WMP7032 OT-23 OT-23 WT-2307 WMP7032 WT-2307

    WT2307

    Abstract: WT-2307
    Text: WT-2307 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT - 3 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE *Super high dense cell design for low RDS ON R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V *Rugged and Reliable


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    PDF WT-2307 OT-23 OT-23 WT2307 WT-2307

    Untitled

    Abstract: No abstract text available
    Text: WT-2307 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT - 3 AMPERS 1 Features: DRAIN SOUCE VOLTAGE - 20 VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V


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    PDF WT-2307 OT-23 OT-23

    Untitled

    Abstract: No abstract text available
    Text: WT-2307 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free - 3 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low RDS(ON) R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V


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    PDF WT-2307 OT-23 OT-23

    MARKING S07

    Abstract: BS807 transistor s07
    Text: BS807 N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features • · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly SOT-23 A Dim Min Max A 0.37 0.51 B 1.19


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    PDF BS807 OT-23 OT-23, MIL-STD-202 17RRENT DS11301 MARKING S07 BS807 transistor s07

    transistor s07

    Abstract: n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR BS807 DS11301 sot23 s07 MARKING S07 MARKING S07 SOT23
    Text: BS807 N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features • · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly SOT-23 A D TOP VIEW G Mechanical Data


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    PDF BS807 OT-23 OT-23, MIL-STD-202 DS11301 transistor s07 n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR BS807 sot23 s07 MARKING S07 MARKING S07 SOT23

    MARKING S07

    Abstract: DS11301 BS807 MARKING S07 SOT23
    Text: BS807 N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR POWER SEMICONDUCTOR Features • • • • • High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly SOT-23 A D


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    PDF BS807 OT-23 OT-23, MIL-STD-202 DS11301 MARKING S07 BS807 MARKING S07 SOT23

    ph 4148 zener diode

    Abstract: ka6 transistor smd Marking Code SMD databook melf diodes color code 4148 TRANSISTOR SMD MARKING CODE w2 GLUE IR-130 smd diode sod-323 marking code L2 smd diode marking 5d SOD-323 SOD-123 a2 4148 TRANSISTOR SMD MARKING CODE 352
    Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book small signal diodes vishay semiconductors vHN-db1102-0407 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    PDF vHN-db1102-0407 ph 4148 zener diode ka6 transistor smd Marking Code SMD databook melf diodes color code 4148 TRANSISTOR SMD MARKING CODE w2 GLUE IR-130 smd diode sod-323 marking code L2 smd diode marking 5d SOD-323 SOD-123 a2 4148 TRANSISTOR SMD MARKING CODE 352

    ph 1n4148

    Abstract: DO219AB Syd17m 1n914 SOD123 s07j Do219AB C 13 PH Zener diode 1N4148 sod123 ll4148 sod123 1n4148 ph 1N4148W SOD123
    Text: S OD 3 2 3 S OD 12 3 DO 2 19 A B S M F S OT 2 3 M i c r o MEL F Q u a d r o MEL F S OD 8 0 M i n i MEL F S OD 8 0 DO 3 5 w w w. v i s h a y. c o m Selector Guide SMALL Signal switching diodes s m a l l s i g n a l DIODE S V I S HAY INTERTE C HNOLO G Y , IN C .


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    PDF 400ce VMN-SG2114-0704 ph 1n4148 DO219AB Syd17m 1n914 SOD123 s07j Do219AB C 13 PH Zener diode 1N4148 sod123 ll4148 sod123 1n4148 ph 1N4148W SOD123

    ecg semiconductors master replacement guide

    Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
    Text: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei


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    PDF

    1972.0005 Transformer

    Abstract: MAGNETICA ferrite TRANSFORMER L6566B MAGNETICA TRANSFORMER T4A 392 fuse 100n x2 TSM1014 EER28L-PC44 6R8 SMD STPS20H
    Text: AN3089 Application note 19 V - 65 W quasi-resonant flyback adapter using L6566B and TSM1014 Introduction This application note describes the characteristics and features of a 65 W demonstration board EVL6566B-65W-QR , tailored to the specifications of a typical hi-end portable


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    PDF AN3089 L6566B TSM1014 EVL6566B-65W-QR) EVL6566B-65W-QR: 1972.0005 Transformer MAGNETICA ferrite TRANSFORMER MAGNETICA TRANSFORMER T4A 392 fuse 100n x2 TSM1014 EER28L-PC44 6R8 SMD STPS20H

    Untitled

    Abstract: No abstract text available
    Text: 19-1240: Rev 0; 6/97 JVXA'AAJVX Sw itched-Capacitor Voltage Inverters _ Applications Local -5V Supply from 5V Logic Supply Features ♦ 5-Pin SOT23-5 Package ♦ 99% Voltage Conversion Efficiency ♦ Invert Input Supply Voltage ♦ 0.7mA Quiescent Current MAX870


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    PDF OT23-5 MAX870) MAX870C/D MAX870EUK MAX871 MAX871EUK OT23-5 5fi7bb51

    PAA 737

    Abstract: MAX6145 ebaa
    Text: 75- 7777: Rev. 0; 12/96 JVWYXAJVX SOT23, Low-Cost, Low-Dropout, 3-Terminal Voltage References General Description Initial accuracy for these devices is ±1%. The output temperature coefficient is typically 15ppm/°C, and guarante ed to be less than 50ppm /°C except


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    PDF MAXG12S/MAX6141/MAX614S/MAX6150/MAX6160 MAX6125/MAX6141 /MAX6145/MAX6150/MAX6160 200mV MAX61xx translat48 OT-143 PAA 737 MAX6145 ebaa

    marking code ce SOT23

    Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
    Text: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A


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    PDF Transistors/SOT23 MMBT2222A IMBT/MMBT3904 MMBT4401 MMBTA05 MMBTA06 MMBT5551 MMBTA42 Appl45 80jjs; marking code ce SOT23 MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE

    74hc47

    Abstract: 7S66 AX394 74HC4 AX395 C4351 tc7566
    Text: Industry’s Only CMOS Switches with 20Q On-Resistance in 5-Pin SOT23 The Only Low-Voltage Switches Guaranteed for 2V Operation Devices in Maxim’s family of single-pole/single-throw SPST low-voltage sw itches not only feature normally open (NO) and norm ally closed (NC) functions, bu t are also available in 5-pin SO T 23 packages


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    PDF greatly350 AX396/3 AX398/399 AX453 8/16-Channel DG428/429 DG406/407 DG408/409 HC405 74hc47 7S66 AX394 74HC4 AX395 C4351 tc7566

    ZR431

    Abstract: No abstract text available
    Text: ADJUSTABLE PRECISION ZENER SHUNT REGULATOR ZR431 ISSUE 1 - OCTOBER 1995 DEVICE DESCRIPTION FEATURES The ZR431 is a three terminal adjustable shunt regulator offering excellent tem perature stability and output current handling capability up to 100mA. The output voltage may be set


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    PDF ZR431 ZR431 100mA. OT223 100mA 1170S7A

    relay Re 04501

    Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031
    Text: ••• • V . / • * •. Agilent Technologie: Innovating the HP Way ' — ENGI86 Service Guid< Agilent 34970A D ata Acquisition / Switch U nit C opyright 1999 H ew lett-Packard Company All Rights Reserved. P rinting History E dition 1, Ju n e 1997


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    PDF ENGI86 4970A E1199 relay Re 04501 JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031

    DS11301

    Abstract: No abstract text available
    Text: BS807 VISHAY N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR /uT E M ir I P O W ER S E M IC O N D U C TO R J Features High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited tor Telephone Subsets Ideal for Automated Surface Mount Assembly


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    PDF BS807 OT-23 OT-23, MIL-STD-202 DS11301

    TRANSISTOR SOT-23 marking JE

    Abstract: Diode SOT-23 marking JE BS807 MARKING S07 DS11301
    Text: BS807 VISHAY N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR /Li T E M I ri / POWERSEMICONDUCTOR I Features High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly TOPiVIEW


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    PDF BS807 OT-23, MIL-STD-202 OT-23 DS11301 TRANSISTOR SOT-23 marking JE Diode SOT-23 marking JE BS807 MARKING S07

    Nippon capacitors

    Abstract: MAX4166EPA
    Text: >M yiXL*4 19-1224; Rev 0; 4/97 High-Output-Drive, Precision, Low-Power, Single Supply, Rail-to-Rail I/O Op Amps w ith Shutdown The MAX4166/MAX4168 have a shutdown mode that re d u ce s su p p ly cu rre n t to 38 jA per am p lifie r and places the outputs into a high-im pedance state. The


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    PDF AX4165-MAX4169 MAX4166/MAX4168 AX4165-M AX4169 4165-M MAX4167EPA MAX4167ESA MAX4168EPD MAX4168ESD MAX4160EUB Nippon capacitors MAX4166EPA

    DS11301

    Abstract: BS807 MARKING S07 SOT23
    Text: BS807 N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly Mechanical Data Case: SOT-23, Plastic Terminals: Solderable per


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    PDF BS807 OT-23, MIL-STD-202 OT-23 DS11301 BS807 MARKING S07 SOT23

    s07a

    Abstract: 21s07a 21s07 PAC21S07AS S50K 4.7 microfarad capacitor 22jL
    Text: a OBJECTIVE » k CALIFORNIA MICRO DEVICES PAC ►► ► ► ► 2 1 S07A P/ACTIVE ACTIVE SCSI 2/3 TERM INATIO N NETW ORK Pin Assignments Features • • • • • • Fully backward com patible to th e industry standard 2107 and 2 1 S07A SCSI term inators


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    PDF 21S07A 21S07A 21S07AS 16-Pin lfl31bMQ s07a 21s07 PAC21S07AS S50K 4.7 microfarad capacitor 22jL

    Untitled

    Abstract: No abstract text available
    Text: Microsemi m Chatsworth, CA * Prog ress P o w ered b y T echnology 9261 Owensmouth Ave. Chatsworth, C a 91311 Phone: 81 8 7 0 1-4 9 3 3 Fax: (8 1 8 )7 0 1 -4 9 3 9 Features • • Surface Mount S O T-23 Package Capable of 350m W atts of Power Dissipation


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    PDF OT-23 00G4547 MMBT4401

    Untitled

    Abstract: No abstract text available
    Text: 191257; Rev O: 7/97 > k iy j x i> k i Low-Dropout, 120mA Linear Regulators General Description The devices feature Dual Mode operation: their out­ put voltage is preset at 3.15V for the T versions, 2.84V for the S versions, or 2.80V for the R versions or can be


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    PDF 120mA MAX8874 MAX8877/MAX8878. lb357