Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    WT2307 Search Results

    WT2307 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    WT2307 Weitron Surface Mount P-Channel Enhancement Mode MOSFET Original PDF
    WT-2307 Weitron Surface Mount P-Channel Enhancement Mode MOSFET Original PDF

    WT2307 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    WMP7032

    Abstract: WT-2307
    Text: WMP7032 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT - 3 AMPERS 1 DRAIN SOUCE VOLTAGE - 20 VOLTAGE GATE Features: 2 SOURCE *Super high dense cell design for low Ros ON R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V


    Original     		PDF WMP7032 OT-23 OT-23 WT-2307 WMP7032 WT-2307

    Untitled

    Abstract: No abstract text available
    Text: WT-2307 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT - 3 AMPERS 1 Features: DRAIN SOUCE VOLTAGE - 20 VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V


    Original     		PDF WT-2307 OT-23 OT-23

    Untitled

    Abstract: No abstract text available
    Text: WT-2307 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free - 3 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low RDS(ON) R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V


    Original     		PDF WT-2307 OT-23 OT-23

    WT2307

    Abstract: WT-2307
    Text: WT-2307 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT - 3 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE *Super high dense cell design for low RDS ON R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V *Rugged and Reliable


    Original     		PDF WT-2307 OT-23 OT-23 WT2307 WT-2307