ZVN3310F
Abstract: SOT23 N-CHANNEL FET 100V ZVP3310F DSA003736 3tf5
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – OCTOBER 1995 FEATURES * 100 Volt VDS * RDS on = 10Ω ✪ COMPLEMENTARY TYPE PARTMARKING DETAIL - ZVP3310F MF ZVN3310F S D G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage
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ZVN3310F
ZVP3310F
ZVN3310F
SOT23 N-CHANNEL FET 100V
ZVP3310F
DSA003736
3tf5
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SOT23 N-CHANNEL FET 100V
Abstract: BSS123 ZVN3310F VDS-100V
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSS123 ✪ ISSUE 3 – JANUARY 1996 PARTMARKING DETAIL – SA S D G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Drain-Source Voltage VDS 100 Drain-Gate Voltage VDGR 100 V Continuous Drain Current at Tamb=25°C
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BSS123
100mA
280mA
ZVN3310F
SOT23 N-CHANNEL FET 100V
BSS123
VDS-100V
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Untitled
Abstract: No abstract text available
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSS123 ✪ ISSUE 3 – JANUARY 1996 PARTMARKING DETAIL – SA S D G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Drain-Gate Voltage VDGR 100 V Continuous Drain Current at Tamb=25°C
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BSS123
100mA
280mA
ZVN3310F
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bss123 sot23
Abstract: alternative bss123
Text: Obsolete. Alternative is BSS123. SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSS123A ISSUE 4 – APRIL 1998 FEATURES * BVDSS = 100V * Low Threshold S D PARTMARKING DETAIL – SAA G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage
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BSS123.
BSS123A
280mA
170mA
100mA
bss123 sot23
alternative bss123
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Untitled
Abstract: No abstract text available
Text: Obsolete. Alternative is BSS123. SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSS123A ISSUE 4 – APRIL 1998 FEATURES * BVDSS = 100V * Low Threshold S D PARTMARKING DETAIL – SAA G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage
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BSS123.
BSS123A
170mA
100mA
280mA
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SOT23 N-CHANNEL FET 100V
Abstract: SOT23 N FET 100V BSS123A PARTMARKING at DSA003679 SA-A
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSS123A ISSUE 4 – APRIL 1998 FEATURES * BVDSS = 100V * Low Threshold S D PARTMARKING DETAIL – SAA G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage Drain-Gate Voltage V DS 100
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BSS123A
170mA
100mA
280mA
SOT23 N-CHANNEL FET 100V
SOT23 N FET 100V
BSS123A
PARTMARKING at
DSA003679
SA-A
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npn power transistor 100v list
Abstract: 1N4148 SOT-23 DV3917 SOT23 N FET 100V 5.6V DIODE ZENER 1N Samsung s5 schematic zener 6v, 1w 1n4148 sot C2N SOT-23 1N4148
Text: DN-110 Design Note DV3917 Positive Floating HSPM By Ed Jung Introduction Connectors The DV3917 evaluation board allows the designer to evaluate the performance of the UCC3917 Hot Swap Power Manager HSPM in a typical application setting. Component selection for the DV3917 is
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DN-110
DV3917
UCC3917
ECJ2YB1C224K
219-4MST
1101M2S3AQE2
npn power transistor 100v list
1N4148 SOT-23
SOT23 N FET 100V
5.6V DIODE ZENER 1N
Samsung s5 schematic
zener 6v, 1w
1n4148 sot
C2N SOT-23
1N4148
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MMBD2104
Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a
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BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
LL914
LL4150,
MMBD2104
Transistor NEC 05F
hp2835 diode
ZENER DIODE t2d
what is the equivalent of ZTX 458 transistor
MMBD2103
T2D DIODE 3w
T2D 8N
2n2222 as equivalent for bfr96
mmbf4932
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MMBD2103
Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.
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BZV49
BZV55
500mW
BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
MMBD2103
ZENER DIODE t2d
MMBD2101
MMBD2102
MMBD2104
SMD codes
bc107 TRANSISTOR SMD CODE PACKAGE SOT23
Transistor NEC 05F
BAT15-115S
NDS358N
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SMD Codes
Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.
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BZV49
BZV55
500mW
BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
SMD Codes
TRANSISTOR SMD T1P
MMBD2104
BAW92
smd transistor A6a
schottky diode s6 81A
a4s smd transistor
Transistor SMD a7s
transistor SMD P2F
MMBD2101
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E-MOSFET
Abstract: C2012X7R1A106K HAT2168-H-EL Diode,Bridge Rectifier zener smd diode 3.3v 1w HAT2168H-EL-E smd BRIDGE-RECTIFIER 2A EEF-SD0G151R MURATA TAG 2a 200v schottky diode
Text: Intersil PoE Evaluation Board Application Note March 12, 2007 AN1192.3 Introduction Selection of the Power Topology With advancements being made at a furious pace in the field of networking, applications have started focusing on achieving the most out of the existing infrastructure. Power
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AN1192
1/16W
E-MOSFET
C2012X7R1A106K
HAT2168-H-EL
Diode,Bridge Rectifier
zener smd diode 3.3v 1w
HAT2168H-EL-E
smd BRIDGE-RECTIFIER 2A
EEF-SD0G151R
MURATA TAG
2a 200v schottky diode
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TVS 58V 400W
Abstract: SM0603 C2012X7R1E225K SMD npn TRANSISTOR 1a 200v vr3 diode smd SM 2220 "power sourcing equipment"
Text: Intersil PoE Evaluation Board Application Note September 9, 2005 AN1192.1 Introduction Selection of the Power Topology With advancements being made at a furious pace in the field of networking, applications have started focusing on achieving the most out of the existing infrastructure. Power
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AN1192
OT-23
TVS 58V 400W
SM0603
C2012X7R1E225K
SMD npn TRANSISTOR 1a 200v
vr3 diode smd
SM 2220
"power sourcing equipment"
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Diode,Bridge Rectifier
Abstract: Diode, Schottky, SOD123 TVS 58V 400W AN1192 HAT2088R HAT2168H ISL6844 ISL6844EVAL2 J1 TRANSISTOR DIODE SOT-23 PACKAGE C1608X7R1E473K
Text: Intersil PoE Evaluation Board Application Note July 10, 2006 AN1192.2 Introduction Selection of the Power Topology With advancements being made at a furious pace in the field of networking, applications have started focusing on achieving the most out of the existing infrastructure. Power
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AN1192
1/16W
Diode,Bridge Rectifier
Diode, Schottky, SOD123
TVS 58V 400W
HAT2088R
HAT2168H
ISL6844
ISL6844EVAL2
J1 TRANSISTOR DIODE SOT-23 PACKAGE
C1608X7R1E473K
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schematic diagram 48v ac regulator uc3842
Abstract: schematic diagram 48v dc motor speed controller 24v dc power supply with uc3842 UC3842 mosfet driver uc3842 half bridge schematic diagram 48v regulator uc3842 48v to 24v buck zvs flyback driver HIP4082 uc3842 AC-DC application
Text: Intersil Industrial and Communications Power Product Selection Guide Integrated FET Regulators Non-Isolated PWM Controllers Isolated PWM Controllers Power MOSFET Drivers Hot Plug Controllers ORing FET Controllers Supervisors Power Sequencers 2 | www.intersil.com/power
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1-888-INTERSIL
LC-043
schematic diagram 48v ac regulator uc3842
schematic diagram 48v dc motor speed controller
24v dc power supply with uc3842
UC3842 mosfet driver
uc3842 half bridge
schematic diagram 48v regulator uc3842
48v to 24v buck
zvs flyback driver
HIP4082
uc3842 AC-DC application
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MF SOT23
Abstract: ZVN3310F partmarking 6 C SOT23 N-CHANNEL FET 100V
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - OCTOBER 1995 ZVN3310F O_ FEATURES * 100 Volt VDS * RDS oni=10“ CO M PLEM ENTARY TYPE • ZVP3310F PARTMARKING DETAIL - MF SOT23 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Continuous Drain Current at T amtj=25°C
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ZVN3310F
ZVP3310F
300jis.
MF SOT23
ZVN3310F
partmarking 6 C
SOT23 N-CHANNEL FET 100V
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Untitled
Abstract: No abstract text available
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -O C T O B E R 1995 ZVN3310F O _ FEATURES * 100 V o lt V DS * R D S o n r1 0 ii C O M PLEM EN TAR Y T Y P E - ZVP3310F PARTM ARKING DETAIL - MF SOT23 ABSOLUTE MAXIMUM RATINGS.
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ZVN3310F
ZVP3310F
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Untitled
Abstract: No abstract text available
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 BSS123 O PARTMARKING DETAIL -S A u SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS 100 V V DGR 100 V Drain-Gate Voltage VALUE Continuous Drain Current at Tam f=2!i°C
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BSS123
100mA
100mA
280mA
300ns.
ZVN3310F
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Untitled
Abstract: No abstract text available
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL P M O S FET ISSUE 3 - JANUARY 1996 BSS123 O PARTM ARKING DETAIL - SA DH I SOT23 ABSOLUTE MAXIM UM RATINGS. PARAMETER SYMBOL Drain-Source Voltage Drain-Gate Voltage VALUE UNIT VDs 100 V V dgr 100 V Continuous Drain Current at Tamtj=25°C
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BSS123
Tsmtp25Â
100mA
280mA
Width-300
ZVN3310F
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Untitled
Abstract: No abstract text available
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSS123A ISSUE 4 -A PR IL 1998_ FEATURES * BVdss = 100V * Low Threshold PARTMARKING D ETAIL - SAA ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V p s Drain-Gate Voltage
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BSS123A
170mA
280mA
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Untitled
Abstract: No abstract text available
Text: SOT23 N-CHANNEL ENHANCEMENT M ODE VERTICAL D M O S FET ISSUE 3 - OCTOBER 1995 FEATURES * 100 Volt VDS * O_ R DS on = 1 0 ß C O M PLEM EN TA RY TYPE PARTM ARKING DETAIL - ZVP3310F MF SOT23 ABSOLUTE MAXIM UM RATINGS. VALUE UNIT V ds 100 V Continuous Drain Current at Tamtj=25°C
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ZVP3310F
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Untitled
Abstract: No abstract text available
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 BSS123A O P A R T M A R K IN G D E T A IL - SAA L> SOT23 ABSOLUTE MAXIMUM RATINGS. PA R A M ET ER SYM BOL Drain-Source Voltage V DS 100 V Drain-Gate Voltage V DGR 100 V Continuous Drain Current at T amtj=25°C
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BSS123A
170mA
100mA
280mA
ZVN3310F
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Untitled
Abstract: No abstract text available
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DM OS FET ISSUE 4 - APRIL 1998_ FEATURES * b v dss = io o v Low Threshold PARTMARKING DETAIL -S A A ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYMBOL D ra in -S o u rc e V o lta g e V ds VALUE
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Untitled
Abstract: No abstract text available
Text: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - OCTOBER 1995 ZVP3310F Q FEATURES * 100 V o lt VDS * R o s to v a COM PLEM ENTARY TYPE - ZVN3310F PARTMARKING DETAIL - MR ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL VALUE U N IT -100 V 75 rrsA -1.2
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ZVP3310F
ZVN3310F
-100V,
-150m
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IFRZ44
Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541
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2N3904
2N3906
2N4400
2N4401
2N4402
2N4403
2N5087
2NS088
2NS551
2N6S15
IFRZ44
IRFZ43
KA3842D
irf510 switch
TRANSISTOR MC7805CT
KA336Z
Transistor mc7812ct
high voltage pnp transistor 700v
IRFZ44 PNP
KS82C670N
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