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    SOT23 DMB Search Results

    SOT23 DMB Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    DIYAMP-SOT23-EVM Texas Instruments Universal Do-It-Yourself (DIY) Amplifier Circuit Evaluation Module Visit Texas Instruments Buy
    REF1112AIDBZRG4 Texas Instruments 1uA, SOT23-3 10ppm/C Shunt Voltage Reference 3-SOT-23 -40 to 85 Visit Texas Instruments Buy
    LM4132AQ1MFR3.0 Texas Instruments Automotive SOT23 Precision Low Dropout Voltage Reference 5-SOT-23 -40 to 125 Visit Texas Instruments Buy
    LM4132CQ1MFT3.0 Texas Instruments Automotive SOT23 Precision Low Dropout Voltage Reference 5-SOT-23 -40 to 125 Visit Texas Instruments Buy
    REF1112AIDBZR Texas Instruments 1uA, SOT23-3 10ppm/C Shunt Voltage Reference 3-SOT-23 -40 to 85 Visit Texas Instruments Buy

    SOT23 DMB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ZXMP3F30FH P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on max ID TA = +25°C • Low On-Resistance • Fast Switching Speed 80mΩ@ VGS = -10V -4.0A • 4.5V Gate Drive Capability 140mΩ@ VGS =-4.5V ⎯ • Thermally Enhanced SOT23 package •


    Original     		PDF ZXMP3F30FH AEC-Q101 DS33579

    Untitled

    Abstract: No abstract text available
    Text: DMBT9022 NEW PRODUCT NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 A C TOP VIEW Mechanical Data · · · · · Case: SOT-23, Molded Plastic


    Original     		PDF DMBT9022 OT-23 OT-23, MIL-STD-202, 300ms, DS30056

    Untitled

    Abstract: No abstract text available
    Text: NEW PRODUCT DMBT9022 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 A C TOP VIEW B Mechanical Data • • •


    Original     		PDF DMBT9022 OT-23 OT-23, MIL-STD-202, DS30056

    Untitled

    Abstract: No abstract text available
    Text: NEW PRODUCT DMBT9922 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain Complement to DMBT9022 SOT-23 A C TOP VIEW B


    Original     		PDF DMBT9922 DMBT9022 OT-23 OT-23, MIL-STD-202, 25RACTERISTICS -50mA, 100MHz DS30126

    DMBT9022

    Abstract: DMBT9922
    Text: DMBT9922 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · · Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain Complement to DMBT9022 SOT-23 · · · Min Max A 0.37 0.51 B 1.19 1.40


    Original     		PDF DMBT9922 DMBT9022 OT-23 OT-23, MIL-STD-202, -50mA, 100MHz 300ms, DS30126 DMBT9022 DMBT9922

    23 a c

    Abstract: No abstract text available
    Text: DMBT9022 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 · · · Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D 0.89 1.05


    Original     		PDF DMBT9022 OT-23 OT-23, MIL-STD-202, 300ms, DS30056 DMBT9022. 23 a c

    DMBT9022

    Abstract: No abstract text available
    Text: DMBT9022 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 · · · Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D 0.89 1.05


    Original     		PDF DMBT9022 OT-23 OT-23, MIL-STD-202, 300ms, DS30056 DMBT9022

    DMBT9022

    Abstract: DMBT9922
    Text: DMBT9922 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · · Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain Complement to DMBT9022 SOT-23 · · · Min Max A 0.37 0.51 B 1.19 1.40


    Original     		PDF DMBT9922 DMBT9022 OT-23 OT-23, MIL-STD-202, -50mA, 100MHz 300ms, DS30126 DMBT9022 DMBT9922

    702 sot23

    Abstract: 1N4448W13F BAV99-7-05-F sot 23 70.2 MMBT3906R BZT52C6V8 DVRN6056
    Text: PRODUCT CHANGE NOTICE DCS/PCN-1116 Contact Date: Implementation Date: Alert Category: Alert Type: September 16, 2008 December 15, 2008 Discrete Semiconductor Bond Wire Change PCN #: PCN #: 1116 TITLE COPPER BOND WIRE IMPLEMENTATION IMPACT None DESCRIPTION OF CHANGE


    Original     		PDF DCS/PCN-1116 MMST3906-7-F MMST4124-7-F MMST4126-7-F MMST4401-7-F MMTT2222A-7-F SD107WS-13 SD107WS-7-F SDA004-7 SDA006-7 702 sot23 1N4448W13F BAV99-7-05-F sot 23 70.2 MMBT3906R BZT52C6V8 DVRN6056

    BC547 sot package sot-23

    Abstract: BC547 sot23 BC557 sot-23 BC557 sot package sot-23 BC556 sot package sot-23 2sa1015 sot-23 2SC945 SOT-23 bc548 sot23 2sb772 TO92 PCR306
    Text: DC Components - Cross Reference Industry Type No. DC Type 2N2955 2N2955 TO-3 2N3055 2N3055 TO-3 2SB1426 2SB1426 2SB507 2SB507 TO-220AB 2N3772 2N3772 TO-3 2SB564A 2SB564A 2N3773 2N3773 TO-3 2N3904 2N3904 TO-92 2SB772 2SB772 TO-126 2N3906 2N3906 TO-92 2SB857 2SB857 TO-220AB


    Original     		PDF 2N2955 2N3055 2SB1426 2SB507 O-220AB 2N3772 BC547 sot package sot-23 BC547 sot23 BC557 sot-23 BC557 sot package sot-23 BC556 sot package sot-23 2sa1015 sot-23 2SC945 SOT-23 bc548 sot23 2sb772 TO92 PCR306

    XL1225 equivalent

    Abstract: 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent
    Text: Transistors, SCR, IC CROSS REFERENCE / EQUIVALENT TABLE R Cross Reference Table 1 / 13 INDUSTRY TYPE No. DC COMP. TYPE No. Cross Reference Table 2 / 13 PACKAGE INDUSTRY TYPE No. DC COMP. TYPE No. PACKAGE 2N2955 2N2955 TO-3 2SA952 2SA952 TO-92 2N3055 2N3055


    Original     		PDF 2N2955 2SA952 2N3055 2SB1426 2N3417 XL1225 equivalent 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent

    DMG1012

    Abstract: ZVN4206GV ZXMS6004FFTA zxmhc3f381n8 DMP2066 DMN2075 DMN2041 ZVN4306G dmp2035 ZXMHC3A01N8
    Text: DIO 1931 MOSFET brochure Final Artwork extra amends 13/1/10 11:51 Page 1 MOSFETs www.diodes.com DIO 1931 MOSFET brochure (Final Artwork extra amends) 13/1/10 11:51 Page 2 DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS


    Original     		PDF A1103-04, DMG1012 ZVN4206GV ZXMS6004FFTA zxmhc3f381n8 DMP2066 DMN2075 DMN2041 ZVN4306G dmp2035 ZXMHC3A01N8

    AP3039AM

    Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
    Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)


    Original     		PDF 2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502

    DMBTA56

    Abstract: No abstract text available
    Text: DC COMPONENTS CO., LTD. R DMBTA56 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. SOT-23 Pinning .020 0.50 .012(0.30) 1 = Base 2 = Emitter 3 = Collector 3


    Original     		PDF DMBTA56 OT-23 -100mA, -10mA -10mA, DMBTA56

    FTZ605

    Abstract: ZDT6790 fzt653 ZDT1049 ZTX415 ZTX796A fzt651 ZXGD3003E6 2DD1766 zetex transistor to92
    Text: DIO 1943 BiPolar brochure Final Artwork 12/4/10 14:50 Page 2 BIPOLAR CORPORATE HEADQUARTERS AND AMERICAS SALES OFFICE TRANSISTORS 15660 N. Dallas Parkway, Suite 850, Dallas, TX 75248 USA Tel: 972-385-2810 E-mail: inquiries@diodes.com EUROPE SALES OFFICE


    Original     		PDF D-81541 DDTA114TCA DDTA114TKA DDA114TH DDA114TU DDA114TK DDTA124TE DDTA124TUA DDTA124TCA DDTA124TKA FTZ605 ZDT6790 fzt653 ZDT1049 ZTX415 ZTX796A fzt651 ZXGD3003E6 2DD1766 zetex transistor to92

    complementary MOSFET TO252

    Abstract: zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4
    Text: MOSFETs diodes.com DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS COMPANY OVERVIEW DIODES MEANS MOSFET BUSINESS Diodes Incorporated is a leading global provider of Discrete and


    Original     		PDF D-81541 A1103-04, complementary MOSFET TO252 zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4

    DMBT9018

    Abstract: No abstract text available
    Text: DC COMPONENTS CO., LTD. DMBT9018 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in AM/FM amplifier and local oscillator of FM/VHF tuner. SOT-23 .020 0.50 .012(0.30) Pinning 1 = Base 2 = Emitter


    Original     		PDF DMBT9018 OT-23 DMBT9018

    DMBTA64

    Abstract: No abstract text available
    Text: DC COMPONENTS CO., LTD. R DMBTA64 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR Description Designed for applications requiring high current gain. SOT-23 Pinning .020 0.50 .012(0.30) 1 = Base 2 = Emitter 3 = Collector 3 .108(0.65)


    Original     		PDF DMBTA64 OT-23 -100mA, -10mA, 100MHz DMBTA64

    DMBTA14

    Abstract: No abstract text available
    Text: DC COMPONENTS CO., LTD. R DMBTA14 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for applications requiring high current gain. SOT-23 Pinning .020 0.50 .012(0.30) 1 = Base 2 = Emitter 3 = Collector 3 .063(1.60)


    Original     		PDF DMBTA14 OT-23 100mA, 100MHz DMBTA14

    DMBTA55

    Abstract: No abstract text available
    Text: DC COMPONENTS CO., LTD. R DMBTA55 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. SOT-23 Pinning .020 0.50 .012(0.30) 1 = Base 2 = Emitter 3 = Collector 3


    Original     		PDF DMBTA55 OT-23 -100mA, -10mA -10mA, DMBTA55

    DMBTA06

    Abstract: No abstract text available
    Text: DC COMPONENTS CO., LTD. R DMBTA06 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. SOT-23 Pinning .020 0.50 .012(0.30) 1 = Base 2 = Emitter 3 = Collector 3


    Original     		PDF DMBTA06 OT-23 100mA, 100MHz DMBTA06

    0178H

    Abstract: No abstract text available
    Text: DMBT9022 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain SOT-23 -H ; h~A TOP VIEW Mechanical Data Case: SOT-23, Molded Plastic Terminals: Solderable per MIL-STD-202,


    OCR Scan     		PDF DMBT9022 OT-23 OT-23, MIL-STD-202, 300ns, DS30056 0178H

    DMBT9022

    Abstract: DMBT9922
    Text: DMBT9922 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain Complement to DMBT9022 SOT-23 -H ; h~A TO P VIEW Mechanical Data_


    OCR Scan     		PDF DMBT9922 DMBT9022 OT-23, MIL-STD-202, OT-23 -50mA, 100MHz DS30126 DMBT9922 DMBT9022

    TXD10K40

    Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
    Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40


    OCR Scan     		PDF bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G