MARKING TR SOT23-3 P MOSFET
Abstract: APM2301CA STD-020C marking tp sot23-3
Text: APM2301CA P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-3A RDS ON = 56mΩ (typ.) @ VGS= -4.5V RDS(ON)= 85mΩ (typ.) @ VGS= -2.5V RDS(ON)= 135mΩ (typ.) @ VGS= -1.8V • • Super High Dense Cell Design SOT23-3 Reliable and Rugged
|
Original
|
PDF
|
APM2301CA
-20V/-3A
OT23-3
APM2301C
APM2301C
MIL-STD-883D-2003
MIL-STD-883D-1005
JESD-22-B
MIL-STD-883D-1011
MARKING TR SOT23-3 P MOSFET
APM2301CA
STD-020C
marking tp sot23-3
|
marking 6AC sot23
Abstract: No abstract text available
Text: Datasheet P-Channel Enhancement Mode MOSFET Features TDM3415S Pin Description -20V/-1.5A , RDS ON =130mΩ(typ.) @ VGS=-4.5V RDS(ON)=170mΩ(typ.) @ VGS=-2.5V Top View of SOT23-3L Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)
|
Original
|
PDF
|
TDM3415S
-20V/-1
OT23-3L
TDM3415Sâ
TDM341
TDM2301S
23-3L
marking 6AC sot23
|
Untitled
Abstract: No abstract text available
Text: Datasheet N-Channel Enhancement Mode MOSFET Features TDM2302S Pin Description 20V/3A , RDS ON =50mΩ(typ.) @ VGS=4.5V RDS(ON)=90mΩ(typ.) @ VGS=2.5V Top View of SOT23-3L Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)
|
Original
|
PDF
|
TDM2302S
OT23-3L
TDM2302Sâ
TDM2302S
23-3L
|
Untitled
Abstract: No abstract text available
Text: Datasheet P-Channel Enhancement Mode MOSFET Features TDM2301S Pin Description -20V/-1.5A , RDS ON =130mΩ(typ.) @ VGS=-4.5V RDS(ON)=170mΩ(typ.) @ VGS=-2.5V Top View of SOT23-3L Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)
|
Original
|
PDF
|
TDM2301S
-20V/-1
OT23-3L
TDM2301Sâ
TDM230
23-3L
|
LED sot23-6
Abstract: LQH32CN100K53L sot23-6 marking code top marking c2 sot23 APW7071 LQH32CN4R7M23L MSCD052 STD-020C 5C SOT23-6
Text: APW7071 Step-Up Converter for 4 Series White LEDs Driver Features General Description • 2.5 V to 6V Input Voltage Range The APW7071 is a high frequency step-up DC/DC con- • 400mA Internal Switch Current • verter in a small 6-lead SOT23 package specially designed
|
Original
|
PDF
|
APW7071
APW7071
400mA
MIL-STD-883D-2003
MIL-STD-883D-1005
JESD-22-B
MIL-STD-883D-1011
MIL-STD-883D-3015
100mA
LED sot23-6
LQH32CN100K53L
sot23-6 marking code
top marking c2 sot23
LQH32CN4R7M23L
MSCD052
STD-020C
5C SOT23-6
|
A1015 BA
Abstract: A1015 sot-23 c1815 pnp A1015 PNP TRANSISTOR A1015 transistor pnp a1015 marking BA sot-23 a1015 transistor c1815 SOT-23 transistor A1015
Text: A1015 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) Excellent hFE Linearity hFE (2)=80(Typ.) at VCE=-6V,IC=-150mA hFE (IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.) Low niose: NF=1dB(Typ.) at f=1KHz
|
Original
|
PDF
|
A1015
OT-23
OT-23
-150mA
C1815
-100u
-10mA
30MHz
A1015 BA
A1015 sot-23
c1815 pnp
A1015 PNP TRANSISTOR
A1015
transistor pnp a1015
marking BA sot-23
a1015 transistor
c1815 SOT-23
transistor A1015
|
A1015 sot-23
Abstract: No abstract text available
Text: WILLAS FM120-M A1015 THRU FM1200-M SOT-23 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features process design, excellent power dissipation offers TRANSISTOR• Batch
|
Original
|
PDF
|
OT-23
OD-123+
FM120-M
A1015
FM1200-M
OT-23
OD-123H
FM120-MH
FM130-MH
FM140-MH
A1015 sot-23
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 A1015 TRANSISTOR Plastic-Encapsulate Transistors PNP SOT-23 FEATURES High voltage and high current Excellent hFE Linearity Low niose Complementary to C1815 z z z z 1. BASE 2. EMITTER 3. COLLECTOR
|
Original
|
PDF
|
OT-23
A1015
C1815
-10mA
30MHz
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors A1015LT1 TRANSISTOR PNP SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.15 A ICM: Collector-base voltage
|
Original
|
PDF
|
OT-23
A1015LT1
OT-23
-10mA
30MHz
|
Untitled
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Transistors A1015LT1 TRANSISTOR PNP SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.15 A ICM: Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range
|
Original
|
PDF
|
OT-23
A1015LT1
OT-23
-10mA
30MHz
|
A1015 sot-23
Abstract: A1015 A1015 BA transistor A1015 a1015 transistor C1815 br a1015 c1815 SOT-23 A1015 DATASHEET equivalent transistor A1015
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 A1015 TRANSISTOR Plastic-Encapsulate Transistors PNP SOT-23 FEATURES High voltage and high current Excellent hFE Linearity Low niose Complementary to C1815 z z z z 1. BASE 2. EMITTER 3. COLLECTOR
|
Original
|
PDF
|
OT-23
A1015
C1815
-10mA
30MHz
A1015 sot-23
A1015
A1015 BA
transistor A1015
a1015 transistor
C1815
br a1015
c1815 SOT-23
A1015 DATASHEET
equivalent transistor A1015
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 A1015 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP FEATURES High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) z Excellent hFE Linearity hFE (2)=80(Typ.) at VCE=-6V,IC=-150mA
|
Original
|
PDF
|
OT-23
A1015
-150mA
-150mA
C1815
-10mA
30MHz
|
transistor BA sot-23
Abstract: A1015LT1 pnp transistor A1 sot-23 SOT-23 marking BA A1015 ba marking sot-23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors A1015LT1 SOT—23 ) TRANSISTOR( PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES ELECTRICAL CHARACTERISTICS(Tamb=25℃ Parameter Symbol 1.0 Power dissipation PCM :
|
Original
|
PDF
|
OT-23
A1015LT1
OT--23
-100A
30MHz
037TPY
950TPY
550REF
022REF
transistor BA sot-23
A1015LT1
pnp transistor A1 sot-23
SOT-23 marking BA
A1015
ba marking sot-23
|
MJ8-SL
Abstract: 1206 di pm7102 ON B34 PM710 data sheet 74ls373 sot23 a36 a26 sot23 AMP-MJ8 74ls373 datasheet
Text: P1 P2 P3V VDD VIO P3V VIO VIO VDD A1 1 1 B1 A2 2 2 B2 TCK A3 3 A4 4 1 A5 5 A6 6 INTA TDO 2 6 B6 0603 1812_MICDYN 7 B7 A8 8 X49 A9 9 2 C36 0.1 0.1 2 2 2 1812_MICDYN 10 B10 A11 11 11 B11 A12 12 12 B12 A13 13 13 B13 A14 14 C38 10 16V 8 B8 9 B9 X50 A10 10 1 1
|
Original
|
PDF
|
CSE003
MJ8-SL
1206 di
pm7102
ON B34
PM710
data sheet 74ls373
sot23 a36
a26 sot23
AMP-MJ8
74ls373 datasheet
|
|
marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
|
Original
|
PDF
|
1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
|
philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
|
Original
|
PDF
|
1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
|
philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
|
Original
|
PDF
|
1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
|
C5V6 ph
Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
Text: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER
|
Original
|
PDF
|
1N821
1N4733A
1N821A
1N4734A
1N823
1N4735A
1N823A
C5V6 ph
C18 ph
PH C5V1
philips diode PH 33D
C8V2 PH
C10 PH
c4v7 ph
c5v1ph
c3v9ph
C33PH
|
A1015LT1
Abstract: A1015L
Text: A1015LT1 A1015LT1 TRANSISTOR PNP * “G” Lead(Pb)-Free SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25 ) 2. 4 1. 3 TJ, Tstg: -55 0. 95 0. 4 2. 9 Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range
|
Original
|
PDF
|
A1015LT1
OT-23
-10mA
30MHz
A1015LT1
A1015L
|
surface mount transistor A55
Abstract: surface mount transistor A48 c60 equivalent CR0805 irf150 rd sot23 sn74ls574 sot223, 31 64 sot23 a36 AD30
Text: P3V VIO P2 P1 NDA # VDD_PCI A1 1 P3V VIO VIO 1 B1 VDD_PCI A2 2 +12V_PCI A3 3 TCK A4 4 2 B2 TOOL1 3 B3 TMS X8 TDI X9 1 TDO 1 1 4 B4 A6 6 X7 A8 8 A9 9 X11 A10 10 1 X12 1 X10 7 B7 1 X50 12 B12 A13 13 13 B13 A14 14 14 B14 GNT# 18 B18 REQ# A19 19 19 B19 AD30 AD26
|
Original
|
PDF
|
CC0805
CR0805
NDT451AN
CR1206
OT223
LM393M
IRF150
surface mount transistor A55
surface mount transistor A48
c60 equivalent
CR0805
irf150
rd sot23
sn74ls574
sot223, 31 64
sot23 a36
AD30
|
Untitled
Abstract: No abstract text available
Text: A1015LT1 A1015LT1 TRANSISTOR PNP SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25 ) 2. 4 1. 3 0. 4 0. 95 TJ, Tstg: -55 2. 9 Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range to +150
|
Original
|
PDF
|
A1015LT1
OT-23
-10mA
30MHz
|
secos gmbh
Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers
|
Original
|
PDF
|
SGSR809-A
SC-59
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
c945 p 331 transistor npn
SM2150AM
SM1150AM
c945 p 331 transistor
SMBJ11CA
2sd2142
SM4005A
SSG8
pzt649
|
TPS78918DBVR
Abstract: TPS78918DBVT TPS78925 TPS78928 TPS78930 TPS78915 TPS78915DBVR TPS78915DBVT TPS78918
Text: TPS78915, TPS78918, TPS78925, TPS78928, TPS78930 ULTRALOW-POWER LOW-NOISE 100-mA LOW-DROPOUT LINEAR REGULATORS SLVS300A – SEPTEMBER 2000 – REVISED MAY 2001 D D D D D D D D D 100-mA Low-Dropout Regulator Available in 1.5-V, 1.8-V, 2.5-V, 2.8-V, 3.0-V Output Noise Typically 56 µVRMS
|
Original
|
PDF
|
TPS78915,
TPS78918,
TPS78925,
TPS78928,
TPS78930
100-mA
SLVS300A
100-mA
TPS78930)
TPS78918DBVR
TPS78918DBVT
TPS78925
TPS78928
TPS78930
TPS78915
TPS78915DBVR
TPS78915DBVT
TPS78918
|
TPS78930
Abstract: TPS79015 TPS79015DBVR TPS79015DBVT TPS79018 TPS79018DBVT TPS79025 TPS79028 TPS79030
Text: TPS79015, TPS79018, TPS79025, TPS79028, TPS79030 ULTRALOW-POWER LOW-NOISE 50-mA LOW-DROPOUT LINEAR REGULATORS SLVS299B – SEPTEMBER 2000 – REVISED MAY 2001 D D D D D D D D D 50-mA Low-Dropout Regulator Available in 1.5-V, 1.8-V, 2.5-V, 2.8-V, 3.0-V Output Noise Typically 56 µVRMS
|
Original
|
PDF
|
TPS79015,
TPS79018,
TPS79025,
TPS79028,
TPS79030
50-mA
SLVS299B
50-mA
TPS79030)
TPS78930
TPS79015
TPS79015DBVR
TPS79015DBVT
TPS79018
TPS79018DBVT
TPS79025
TPS79028
TPS79030
|