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    A1015L Search Results

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    A1015L Price and Stock

    Leviton Manufacturing Co H6A10-15L

    PCORD CAT 6A HIGH-FLEX 15 FT (4.5M) BU | Leviton H6A10-15L
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    RS H6A10-15L Bulk 10 Weeks 1
    • 1 $64.51
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    Lattice Semiconductor Corporation GAL20RA10-15LP

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    Bristol Electronics GAL20RA10-15LP 52
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    GAL20RA10-15LP 7 1
    • 1 $11.25
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    GAL20RA10-15LP 6
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    Lattice Semiconductor Corporation GAL20RA1015LP

    HIGH-SPEED ASYNCHRONOUS E2CMOS PLD GENERIC ARRAY LOGIC EE PLD, 15ns, PAL-Type, CMOS, PDIP24
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    ComSIT USA GAL20RA1015LP 16
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    Toshiba America Electronic Components 2SA1015LGR(F)

    TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
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    Chip1Stop 2SA1015LGR(F) 7,050
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    A1015L Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    A1015LT1 Jiangsu Changjiang Electronics Technology TRANSISTOR PNP Original PDF
    A1015LT1 Weitron TRANSISTOR (PNP) Original PDF
    A1015LT1-SOT-23 Jiangsu Changjiang Electronics Technology TRANSISTOR PNP Original PDF

    A1015L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A1015LT1

    Abstract: A1015L
    Text: A1015LT1 A1015LT1 TRANSISTOR PNP * “G” Lead(Pb)-Free SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25 ) 2. 4 1. 3 TJ, Tstg: -55 0. 95 0. 4 2. 9 Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range


    Original
    PDF A1015LT1 OT-23 -10mA 30MHz A1015LT1 A1015L

    transistor BA sot-23

    Abstract: A1015LT1 pnp transistor A1 sot-23 SOT-23 marking BA A1015 ba marking sot-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors A1015LT1 SOT—23 ) TRANSISTOR( PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES ELECTRICAL CHARACTERISTICS(Tamb=25℃ Parameter Symbol 1.0 Power dissipation PCM :


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    PDF OT-23 A1015LT1 OT--23 -100A 30MHz 037TPY 950TPY 550REF 022REF transistor BA sot-23 A1015LT1 pnp transistor A1 sot-23 SOT-23 marking BA A1015 ba marking sot-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors A1015LT1 TRANSISTOR PNP SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.15 A ICM: Collector-base voltage


    Original
    PDF OT-23 A1015LT1 OT-23 -10mA 30MHz

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors A1015LT1 TRANSISTOR PNP SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.15 A ICM: Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range


    Original
    PDF OT-23 A1015LT1 OT-23 -10mA 30MHz

    Untitled

    Abstract: No abstract text available
    Text: A1015LT1 A1015LT1 TRANSISTOR PNP SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25 ) 2. 4 1. 3 0. 4 0. 95 TJ, Tstg: -55 2. 9 Collector current ICM: -0.15 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range to +150


    Original
    PDF A1015LT1 OT-23 -10mA 30MHz

    Transistor S8550 2TY

    Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
    Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250


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    PDF OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6

    Y2 transistor

    Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
    Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123


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    PDF huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882

    1015LT1

    Abstract: No abstract text available
    Text: M C C SOT-23 P la stic-E n ca p s u la te T r a n s is to r s ^ ^ ^ A 1015LT1 TR A N SISTO R PNP 1 .BASE 2 .E M ITT E R 3 .C O LLE C T O R m FEATURES Power dissipation Pcm : 0.2 W (Tamb=25"C ) Collector current |CM: -0.15A Collector-base voltage V ( b r )Cb o : - 5 0 V


    OCR Scan
    PDF OT-23 1015LT1