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Ampleon BLF8G22LS-270 RF MOSFET LDMOS 28V SOT502B
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DigiKey	BLF8G22LS-270	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Ampleon BLF8G22LS-140U RF MOSFET LDMOS 28V SOT502B
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DigiKey	BLF8G22LS-140U	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Ampleon BLF8G22LS-220J RF MOSFET LDMOS 28V SOT502B
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DigiKey	BLF8G22LS-220J	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	BLF8G22LS-220J		7,700		1	1 $76.61 10 $76.61 100 $72.01 1000 $65.12 10000 $65.12	Buy Now
Ampleon BLF8G22LS-270U RF MOSFET LDMOS 28V SOT502B
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DigiKey	BLF8G22LS-270U	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	BLF8G22LS-270U		32		1	1 $80.34 10 $80.34 100 $75.52 1000 $68.29 10000 $68.29	Buy Now
Rochester Electronics LLC BLF8G22LS-205VU RF MOSFET LDMOS 28V CDFM6
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DigiKey	BLF8G22LS-205VU	Bulk			5	1 - 10 $71.6 100 $71.6 1000 $71.6 10000 $71.6	Buy Now

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BLF8G22LS Datasheets (34)

Part	Manufacturer	Description	Datasheet Type	PDF
BLF8G22LS-140	NXP Semiconductors	Power LDMOS transistor	Original	PDF
BLF8G22LS-140J	NXP Semiconductors	BLF8G22LS-140 - BLF8G22LS-140 - Power LDMOS transistor	Original	PDF
BLF8G22LS-140U	NXP Semiconductors	BLF8G22LS-140 - BLF8G22LS-140 - Power LDMOS transistor	Original	PDF
BLF8G22LS-160BV	NXP Semiconductors	Extended video bandwidth with Doherty efficiency	Original	PDF
BLF8G22LS-160BV	NXP Semiconductors	Power LDMOS transistor	Original	PDF
BLF8G22LS-160BV,11	NXP Semiconductors	BLF8G22LS-160BV - BLF8G22LS-160BV - Power LDMOS transistor	Original	PDF
BLF8G22LS-160BV:11	NXP Semiconductors	BLF8G22LS-160BV - BLF8G22LS-160BV - Power LDMOS transistor	Original	PDF
BLF8G22LS-160BVX	NXP Semiconductors	BLF8G22LS-160BV - BLF8G22LS-160BV - Power LDMOS transistor	Original	PDF
BLF8G22LS-200GV	NXP Semiconductors	Power LDMOS transistor	Original	PDF
BLF8G22LS-200GV	NXP Semiconductors	Extended video bandwidth with Doherty efficiency	Original	PDF
BLF8G22LS-200GV,12	NXP Semiconductors	BLF8G22LS-200GV - BLF8G22LS-200GV - Power LDMOS transistor	Original	PDF
BLF8G22LS-200GVJ	NXP Semiconductors	BLF8G22LS-200GV - BLF8G22LS-200GV - Power LDMOS transistor	Original	PDF
BLF8G22LS-200V	NXP Semiconductors	Extended video bandwidth with Doherty efficiency	Original	PDF
BLF8G22LS-200V	NXP Semiconductors	Power LDMOS transistor	Original	PDF

BLF8G22LS-200V,112	NXP Semiconductors	BLF8G22LS-200V - BLF8G22LS-200V - Power LDMOS transistor	Original	PDF
BLF8G22LS-200V,118	NXP Semiconductors	BLF8G22LS-200V - BLF8G22LS-200V - Power LDMOS transistor	Original	PDF
BLF8G22LS-205VJ	Ampleon USA	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.3DB SOT1239B	Original	PDF
BLF8G22LS-205VU	Ampleon USA	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.3DB SOT1239B	Original	PDF
BLF8G22LS-220	NXP Semiconductors	Power LDMOS transistor	Original	PDF
BLF8G22LS-220J	NXP Semiconductors	BLF8G22LS-220 - BLF8G22LS-220 - Power LDMOS transistor	Original	PDF

BLF8G22LS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: BLF8G22LS-220 Power LDMOS transistor Rev. 1 — 20 December 2012 Objective data sheet 1. Product profile 1.1 General description 220 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance	Original	BLF8G22LS-220	PDF
transistor 742 Abstract: j494 transistor blf8g22ls Text: BLF8G22LS-270V; BLF8G22LS-270GV Power LDMOS transistor Rev. 2 — 3 December 2012 Product data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz.	Original	BLF8G22LS-270V; BLF8G22LS-270GV BLF8G22LS-270V 8G22LS-270GV transistor 742 j494 transistor blf8g22ls	PDF
transistor j241 Abstract: transistor j239 J241 transistor Text: BLF8G22LS-200V; BLF8G22LS-200GV Power LDMOS transistor Rev. 2 — 10 December 2012 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz.	Original	BLF8G22LS-200V; BLF8G22LS-200GV BLF8G22LS-200V 8G22LS-200GV transistor j241 transistor j239 J241 transistor	PDF
Untitled Abstract: No abstract text available Text: BLF8G22LS-140 Power LDMOS transistor Rev. 2 — 10 April 2013 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.	Original	BLF8G22LS-140	PDF
Untitled Abstract: No abstract text available Text: BLF8G22LS-240 Power LDMOS transistor Rev. 2 — 22 January 2013 Preliminary data sheet 1. Product profile 1.1 General description 240 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance	Original	BLF8G22LS-240	PDF
BLF8G22LS-270V Abstract: No abstract text available Text: BLF8G22LS-270V; BLF8G22LS-270GV Power LDMOS transistor Rev. 1 — 13 June 2012 Objective data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance	Original	BLF8G22LS-270V; BLF8G22LS-270GV BLF8G22LS-270V 8G22LS-270GV	PDF
Untitled Abstract: No abstract text available Text: BLF8G22LS-200V; BLF8G22LS-200GV Power LDMOS transistor Rev. 1 — 13 June 2012 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance	Original	BLF8G22LS-200V; BLF8G22LS-200GV BLF8G22LS-200V 8G22LS-200GV	PDF
Untitled Abstract: No abstract text available Text: BLF8G22LS-240 Power LDMOS transistor Rev. 3 — 7 March 2013 Product data sheet 1. Product profile 1.1 General description 240 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.	Original	BLF8G22LS-240	PDF
1206 PHILIPS Abstract: transistor 86 Text: BLF8G22LS-160BV Power LDMOS transistor Rev. 1 — 25 June 2012 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2000 MHz to 2200 MHz.	Original	BLF8G22LS-160BV excell11 1206 PHILIPS transistor 86	PDF
Untitled Abstract: No abstract text available Text: BLF8G22LS-140 Power LDMOS transistor Rev. 1 — 25 September 2012 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance	Original	BLF8G22LS-140	PDF
smd transistor j210 Abstract: Rogers 4350B Text: BLF8G22LS-220 Power LDMOS transistor Rev. 2 — 15 April 2013 Product data sheet 1. Product profile 1.1 General description 220 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.	Original	BLF8G22LS-220 smd transistor j210 Rogers 4350B	PDF
Untitled Abstract: No abstract text available Text: BLF8G22LS-240 Power LDMOS transistor Rev. 1 — 11 December 2012 Objective data sheet 1. Product profile 1.1 General description 240 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance	Original	BLF8G22LS-240	PDF
Untitled Abstract: No abstract text available Text: BLF8G22LS-270 Power LDMOS transistor Rev. 2 — 3 December 2012 Preliminary data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance	Original	BLF8G22LS-270	PDF
Untitled Abstract: No abstract text available Text: BLF8G22LS-270V; BLF8G22LS-270GV Power LDMOS transistor Rev. 1 — 13 June 2012 Objective data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance	Original	BLF8G22LS-270V; BLF8G22LS-270GV BLF8G22LS-270V 8G22LS-270GV	PDF

Untitled Abstract: No abstract text available Text: BLF8G22LS-160BV Power LDMOS transistor Rev. 1 — 25 June 2012 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2000 MHz to 2200 MHz.	Original	BLF8G22LS-160BV	PDF
transistor TO-220 Outline Dimensions Abstract: No abstract text available Text: BLF8G22LS-220 Power LDMOS transistor Rev. 3 — 30 May 2013 Product data sheet 1. Product profile 1.1 General description 220 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.	Original	BLF8G22LS-220 transistor TO-220 Outline Dimensions	PDF
Untitled Abstract: No abstract text available Text: BLF8G22LS-270 Power LDMOS transistor Rev. 3 — 20 December 2012 Product data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance	Original	BLF8G22LS-270	PDF
base station product Abstract: No abstract text available Text: BLF8G22LS-200V; BLF8G22LS-200GV Power LDMOS transistor Rev. 1 — 13 June 2012 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance	Original	BLF8G22LS-200V; BLF8G22LS-200GV BLF8G22LS-200V 8G22LS-200GV base station product	PDF
Untitled Abstract: No abstract text available Text: Enabling the Mobile Experience High Performance RF for wireless infrastructure Unleash the performance of your RF and microwave designs www.nxp.com/unleash-rf Enabling the Mobile Experience The future is mobile. And mobility means the freedom to innovate, communicate, connect and win.	Original		PDF
UPC8236 Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s	Original		PDF
Untitled Abstract: No abstract text available Text: NXP Gen8 ceramic LDMOS power transistors with video bandwidth Extended video bandwidth with Doherty efficiency Perfect for today’s multi-mode, multi-carrier base stations, within NXP’s range of Gen8 final-stage broadband amplifiers there is a dedicated family that delivers extended video bandwidth in	Original	BLF8G27LS-150 OT1244	PDF
BA 7891 NG Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104 Text: 释放潜能 RF 手册第 16 版高性能 RF 产品应用和设计手册 2012 年 6 月恩智浦助您释放下一代 RF 和微波设计的潜能恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进	Original	PRF957 TFF1003HN TFF1007HN TFF1014HN TFF1015HN TFF1017HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN BA 7891 NG bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104	PDF
BLF188XRS Abstract: BLF574XR,112 Text: Updated: 26-Nov-13 RF Power Model Overview Type Number ADS Model ADS-2009 BLA0912-250 BLA6G1011-200R BLA6H0912-500 BLA6H0912L-1000 BLA6H1011-600 BLC8G24LS-240AV BLC8G27LS-160AV BLC8G27LS-240AV BLD6G22L-50 BLD6G22LS-50 BLF1043 BLF1046 BLF145 BLF147 BLF174XR	Original	26-Nov-13 ADS-2009 BLA0912-250 BLA6G1011-200R BLA6H0912-500 BLA6H0912L-1000 BLA6H1011-600 BLC8G24LS-240AV BLC8G27LS-160AV BLC8G27LS-240AV BLF188XRS BLF574XR,112	PDF
BB 509 varicap diode Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s	Original		PDF

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BLF8G22LS Price and Stock

Ampleon BLF8G22LS-270

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Ampleon BLF8G22LS-270U

Rochester Electronics LLC BLF8G22LS-205VU

BLF8G22LS Datasheets (34)

BLF8G22LS Datasheets Context Search

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transistor 742

transistor j241

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BLF8G22LS-270V

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1206 PHILIPS

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smd transistor j210

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transistor TO-220 Outline Dimensions

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base station product

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UPC8236

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BA 7891 NG

BLF188XRS

BB 509 varicap diode