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    SOT115J Search Results

    SOT115J Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SOT115J NXP Semiconductors rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads Original PDF

    SOT115J Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BGY67A

    Abstract: DIN45004B
    Text: BGY67A 200 MHz, 24 dB gain reverse amplifier Rev. 04 — 14 March 2005 Product data sheet 1. Product profile 1.1 General description Hybrid high dynamic range amplifier module in a SOT115J package operating at a voltage supply of 24 V DC . CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken


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    BGY67A OT115J MSC895 BGY67A DIN45004B PDF

    CGD942C

    Abstract: No abstract text available
    Text: CGD942C 870 MHz, 23 dB gain power doubler amplifier Rev. 01 — 7 June 2007 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.


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    CGD942C OT115J CGD942C PDF

    catv amplifier

    Abstract: CATV amplifier transistor 6-32UNC-2A BGY687 SC16 5965
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BGY687 CATV amplifier module Product specification Supersedes data of February 1995 File under Discrete Semiconductors, SC16 1995 Sep 11 Philips Semiconductors Product specification CATV amplifier module FEATURES BGY687 PINNING - SOT115J


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    BGY687 OT115J MSA319 catv amplifier CATV amplifier transistor 6-32UNC-2A BGY687 SC16 5965 PDF

    Untitled

    Abstract: No abstract text available
    Text:        CGD942C 870 MHz, 23 dB gain power doubler amplifier Rev. 4 — 25 June 2014 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero Field Effect Transistor (HFET) GaAs dies.


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    CGD942C OT115J PDF

    CGD1044H

    Abstract: No abstract text available
    Text: CGD1044H 1 GHz, 25 dB gain high output power doubler Rev. 3 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.


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    CGD1044H OT115J CGD1044H PDF

    BGR269

    Abstract: DIN45004B
    Text: BGR269 200 MHz, 35 dB gain reverse amplifier Rev. 6 — 5 August 2010 Product data sheet 1. Product profile 1.1 General description High performance amplifier in a SOT115J package, operating at a voltage supply of 24 V DC . CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken


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    BGR269 OT115J BGR269 DIN45004B PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGE787B CATV amplifier module Preliminary specification 2000 Oct 03 Philips Semiconductors Preliminary specification CATV amplifier module BGE787B PINNING - SOT115J FEATURES • Excellent linearity PIN


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    M3D252 BGE787B OT115J OT115J 603518/01/pp6 PDF

    philips fr 310

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D252 CGY887B 860 MHz, 27.8 dB gain push-pull amplifier Product specification 2001 Nov 27 Philips Semiconductors Product specification 860 MHz, 27.8 dB gain push-pull amplifier FEATURES CGY887B PINNING - SOT115J


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    M3D252 CGY887B OT115J SCA73 613518/01/pp8 philips fr 310 PDF

    bgy887

    Abstract: No abstract text available
    Text: DATA SHEET book, halfpage M3D252 BGY887 860 MHz, 21.5 dB gain push-pull amplifier Product specification Supersedes data of 1999 Mar 30 2001 Nov 15 Philips Semiconductors Product specification 860 MHz, 21.5 dB gain push-pull amplifier FEATURES BGY887 PINNING - SOT115J


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    M3D252 BGY887 OT115J MSA319 SCA73 613518/05/pp12 bgy887 PDF

    Untitled

    Abstract: No abstract text available
    Text: DAT dbook, halfpage M3D252 BGY887 860 MHz, 21.5 dB gain push-pull amplifier Product specification Supersedes data of 1999 Mar 30 2001 Nov 15 NXP Semiconductors Product specification 860 MHz, 21.5 dB gain push-pull amplifier FEATURES BGY887 PINNING - SOT115J


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    M3D252 BGY887 OT115J MSA319 613518/05/pp10 PDF

    BP317

    Abstract: CGY887A DIN45004B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 CGY887A CATV amplifier module Product specification Supersedes data of 1999 Mar 30 2000 Mar 24 Philips Semiconductors Product specification CATV amplifier module CGY887A FEATURES PINNING - SOT115J • High gain


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    M3D252 CGY887A OT115J 603510/03/pp8 BP317 CGY887A DIN45004B PDF

    BGY66B

    Abstract: BP317 DIN45004B SC16
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BGY66B CATV amplifier module Product specification Supersedes data of 1995 Sep 11 File under Discrete Semiconductors, SC16 1997 Apr 14 Philips Semiconductors Product specification CATV amplifier module BGY66B PINNING - SOT115J


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    BGY66B OT115J MSA319 SCA54 127167/00/02/pp8 BGY66B BP317 DIN45004B SC16 PDF

    str 450 a

    Abstract: BGY785A BP317 DIN45004B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGY785A CATV amplifier module Product specification Supersedes data of 1997 Apr 10 1999 Mar 30 Philips Semiconductors Product specification CATV amplifier module BGY785A FEATURES PINNING - SOT115J • Excellent linearity


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    M3D252 BGY785A OT115J SCA63 125008/00/03/pp12 str 450 a BGY785A BP317 DIN45004B PDF

    CATV amplifier transistor

    Abstract: philips hybrid CATV DIN45004B BGY887 BP317
    Text: DATA SHEET book, halfpage M3D252 BGY887 CATV amplifier module Product specification Supersedes data of 1997 Dec 17 1999 Mar 30 Philips Semiconductors Product specification CATV amplifier module FEATURES BGY887 PINNING - SOT115J • Excellent linearity PIN


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    M3D252 BGY887 OT115J MSA319 SCA63 125008/00/04/pp12 CATV amplifier transistor philips hybrid CATV DIN45004B BGY887 BP317 PDF

    CGY1047

    Abstract: No abstract text available
    Text: CGY1047 1 GHz, 27 dB gain GaAs push-pull amplifier Rev. 01 — 30 July 2009 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Heterojunction Field Effect Transistor (HFET) GaAs dies.


    Original
    CGY1047 OT115J 2002/95/EC, CGY1047 PDF

    SOT-115J

    Abstract: SOT115J
    Text: PDF: 2004 Feb 05 Philips Semiconductors Package outline Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J D E Z p A2 1 2 3 5 7 8 9 A L F S


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    OT115J SOT-115J SOT115J PDF

    BGD902L

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification CATV amplifier module BGD902L FEATURES PINNING -SOT115J • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • Excellent return loss properties 2 common • Silicon nitride passivation 3 common


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    BGD902L -SOT115J OT115J SA319 BGD902L PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification CATV am plifier module BGD702D FEATURES PINNING -SOT115J • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation 2 common • Rugged construction 3 common • Gold metallization ensures excellent reliability.


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    BGD702D -SOT115J DIN45004B: PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER bTE D PHILIPS/DISCRETE • bbSB^Bl Q032537 2T0 H A P X Philips Semiconductors Preliminary specification CA TV amplifier module FEATURES BGY885B PINNING - SOT115J2 • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation


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    Q032537 BGY885B OT115J2 BGY885B PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification CATV power doubler amplifier modules FEATURES BGD502; BGD504 PINNING - SOT115J • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation 2 common • Rugged construction


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    BGD502; BGD504 OT115J SA319 BGD502 DIN45004B: PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors CATV am plifier module FEATURES BGD804 PINNING - SOT115J • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation 2 common • Rugged construction 3 • Gold metallization ensures


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    BGD804 OT115J SA319 DIN45004B; PDF

    florida rf 100 2a

    Abstract: n621 6-32UNC-2A BGY887B DIN45004B
    Text: Philips Semiconductors Product specification CATV amplifier module FEATURES BGY887B PINNING - SOT115J2 • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • High gain 2 common • Excellent return loss properties. 3 common 5 +Vß DESCRIPTION


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    BGY887B BGY887B -SOT115J2 SCD28 00TM412 florida rf 100 2a n621 6-32UNC-2A DIN45004B PDF

    6-32UNC-2A

    Abstract: BGD704 DIN45004B
    Text: Philips Semiconductors Product specification CATV amplifier module FEATURES BGD704 PINNING-SOT115J • Excellent linearity PIN DESCRIPTION input 2 common • Rugged construction 3 common • Gold metallization ensures excellent reliability. 5 +vB 7 common


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    BGD704 OT115J OT115J 6-32UNC-2A OT115J. BGD704 DIN45004B PDF

    BGY785AD

    Abstract: DIN45004B
    Text: Philips Semiconductors Product specification CATV amplifier module FEATURES BGY785AD PINNING -SOT115J2 • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation 2 common • Rugged construction 3 common • Gold metallization ensures


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    BGY785AD -SOT115J2 711062b OT115J2. 7110fl2b 0D14D14 BGY785AD DIN45004B PDF