Untitled
Abstract: No abstract text available
Text: BAT54V SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 30 Volts FORWARD CURRENT – 0.2 Ampere FEATURES SOT-563 • Low Turn-on Voltage • Fast Switching • PN Junction Guard Ring for Transient and ESD Protection SOT-563 MECHANICAL DATA • Case: SOT-563 Plastic
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BAT54V
OT-563
OT-563
J-STD-020D
2002/95/EC
BAT54V
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BAS40V
Abstract: J-STD-020D
Text: BAS40V SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 40 Volts FORWARD CURRENT – 0.2 Ampere FEATURES SOT-563 • Low Forward Voltage Drop • Fast Switching • PN Junction Guard Ring for Transient and ESD Protection SOT-563 MECHANICAL DATA • Case: SOT-563 Plastic
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BAS40V
OT-563
OT-563
J-STD-020D
2002/95/EC
BAS40V
J-STD-020D
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BAT54V
Abstract: J-STD-020D
Text: BAT54V SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 30 Volts FORWARD CURRENT – 0.2 Ampere FEATURES SOT-563 • Low Turn-on Voltage • Fast Switching • PN Junction Guard Ring for Transient and ESD Protection SOT-563 MECHANICAL DATA • Case: SOT-563 Plastic
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BAT54V
OT-563
OT-563
J-STD-020D
2002/95/EC
BAT54V
J-STD-020D
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PDF
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marking us sot-563
Abstract: No abstract text available
Text: BAS40V SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 40 Volts FORWARD CURRENT – 0.2 Ampere FEATURES SOT-563 • Low Forward Voltage Drop • Fast Switching • PN Junction Guard Ring for Transient and ESD Protection SOT-563 MECHANICAL DATA • Case: SOT-563 Plastic
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Original
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BAS40V
OT-563
OT-563
J-STD-020D
2002/95/EC
BAS40V
marking us sot-563
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBD4448V SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 75 Volts FORWARD CURRENT – 0.2 Ampere SOT-563 FEATURES • Fast switching speed • Ideally suited for automatic insertion • For general purpose switching applications SOT-563 MECHANICAL DATA
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MMBD4448V
OT-563
OT-563
J-STD-020D
2002/95/EC
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PDF
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BAS16V
Abstract: J-STD-020D
Text: BAS16V SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 75 Volts FORWARD CURRENT – 0.2 Ampere SOT-563 FEATURES • Fast switching speed • Ideally suited for automatic insertion • For general purpose switching applications SOT-563 MECHANICAL DATA
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BAS16V
OT-563
OT-563
J-STD-020D
2002/95/EC
BAS16V
J-STD-020D
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PDF
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sot-563 EC
Abstract: No abstract text available
Text: BAS16V SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 75 Volts FORWARD CURRENT – 0.2 Ampere SOT-563 FEATURES • Fast switching speed • Ideally suited for automatic insertion • For general purpose switching applications SOT-563 MECHANICAL DATA
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BAS16V
OT-563
OT-563
J-STD-020D
2002/95/EC
100uA
150mA
BAS16V
Jun-2009,
sot-563 EC
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PDF
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Untitled
Abstract: No abstract text available
Text: MMDT3904TB6 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V SOT-563 • Collector current IC = 200mA • Lead free in comply with EU RoHS 2002/95/EC directives.
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MMDT3904TB6
200mA
2002/95/EC
IEC61249
OT-563
OT-563,
MIL-STD-750,
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CHEMH3GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHEMH3GP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SOT-563 * High current gain.
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OT-563)
OT-563
CHDTC143T
300uS;
100MHz
-100m
100OC
CHEMH3GP
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PDF
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CHEMB4GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHEMB4GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SOT-563 * High current gain.
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OT-563)
OT-563
CHDTA114T
300uS;
100MHz
-40OC
-100u
-100m
-500m
CHEMB4GP
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PDF
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marking TP
Abstract: No abstract text available
Text: BAS16VTB6 SURFACE MOUNT SWITCHING DIODES POWER SOT-563 200mWatts • Fast switching speed. 0.044 1.10 0.035(0.90) FEATURES • Surface mount package Ideally Suited for Automatic insertion • High Conductance • Lead free in comply with EU RoHS 2002/95/EC directives.
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BAS16VTB6
2002/95/EC
IEC61249
200mWatts
OT-563
OT-563,
MIL-STD-750,
marking TP
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PDF
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Untitled
Abstract: No abstract text available
Text: BAT54STB-TB6 SURFACE MOUNT SCHOTTKY DIODE ARRAYS 30 Volts POWER 200mWatts SOT-563 0.044 1.10 0.035(0.90) Isolated diode arrays for significant board space savings Surface mount package ideally suited for automatic insertion Extremely Fast Switching Speed
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BAT54STB-TB6
2002/95/EC
IEC61249
200mWatts
OT-563
OT-563
MIL-STD-750,
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PDF
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Untitled
Abstract: No abstract text available
Text: BAT54STB-TB6 SURFACE MOUNT SCHOTTKY DIODE ARRAYS 30 Volts POWER 200mWatts SOT-563 0.044 1.10 0.035(0.90) Isolated diode arrays for significant board space savings Surface mount package ideally suited for automatic insertion Extremely Fast Switching Speed
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Original
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BAT54STB-TB6
200mWatts
OT-563
2002/95/EC
IEC61249
OT-563
MIL-STD-750,
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PDF
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Untitled
Abstract: No abstract text available
Text: BAV199STB6 SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES ARRAY FEATURES • Two isolated diode pairs for significant board space savings • Surface mount package ideally suited for automatic insertion SOT-563 • Very low leakage current. 5nA typical at VR=75V.
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BAV199STB6
2002/95/EC
IEC61249
200mWatts
OT-563
OT-563
MIL-STD-750,
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PDF
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Untitled
Abstract: No abstract text available
Text: BAV199STB6 SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES ARRAY FEATURES • Two isolated diode pairs for significant board space savings • Surface mount package ideally suited for automatic insertion SOT-563 • Very low leakage current. 5nA typical at VR=75V.
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Original
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BAV199STB6
OT-563
200mWatts
2002/95/EC
IEC61249
OT-563
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PDF
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CHEMB3GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHEMB3GP SURFACE MOUNT Dual Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SOT-563
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OT-563)
OT-563
CHDTA143T
300uS;
100MHz
100OC
-40OC
-100u
-100m
CHEMB3GP
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PDF
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Untitled
Abstract: No abstract text available
Text: PJESDA6V8-5LCG LOW CAPACITANCE SOT-563 5-LINE TRANSIENT VOLTAGE SUPPRESSOR ARRAY FOR ESD PROTECTION • Five Separate Unidirectional Configuration for Protection • Low Leakage Current 0.044 1.10 0.035(0.90) 0.011(0.27) 0.006(0.17) • ESD Protection : IEC61000-4-2 8KV Contact 15KV Air
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OT-563
2002/95/EC
IEC61249
IEC61000-4-2
OT-563,
MIL-STD-750,
00cular
2011-REV
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PDF
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Untitled
Abstract: No abstract text available
Text: PJESDA6V8-5LCG LOW CAPACITANCE SOT-563 5-LINE TRANSIENT VOLTAGE SUPPRESSOR ARRAY FOR ESD PROTECTION • Five Separate Unidirectional Configuration for Protection • Low Leakage Current 0.044 1.10 0.035(0.90) 0.011(0.27) 0.006(0.17) • ESD Protection : IEC61000-4-2 8KV Contact 15KV Air
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OT-563
IEC61000-4-2
2002/95/EC
IEC61249
OT-563,
2011-REV
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PDF
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transistor bf 968
Abstract: No abstract text available
Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz rs e b m : u t E n o T t n O
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NE680
NE68030-T1
NE68033-T1B
NE68035
NE68039-T1
NE68039R-T1
transistor bf 968
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PDF
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Untitled
Abstract: No abstract text available
Text: TVS Diode Arrays SPA Diodes Low Capacitance ESD Protection - SP3003 Series SP3003 Series 0.65pF Diode Array RoHS Pb GREEN Description The SP3003 has ultra low capacitance rail-to-rail diodes with an additional zener diode fabricated in a proprietary silicon
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SP3003
OT553
OT563,
SC70-5,
OT553,
SC70-6,
MSOP-10
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PDF
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2x062h
Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1
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ZMM22
ZMM24
ZMM27
ZMM43
ZMM47
2x062h
gk105
1SS216
GK104
SMD Transistors w06
D20SB80
SMD marking 5As
D25SB80
LRB706F-40T1G
2x062
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PDF
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BJT characteristics
Abstract: NE68135 NE AND micro-X 2SC4227 2SC5007 2SC5012 NE681 NE68100 NE68118 NE68119
Text: SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e
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NE681
BJT characteristics
NE68135
NE AND micro-X
2SC4227
2SC5007
2SC5012
NE68100
NE68118
NE68119
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PDF
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transistor "micro-x" "marking" 102
Abstract: laser drive ic 3656 4558 L IC 2030 PIN CONNECTIONS LB 1639 mje 3009
Text: SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e
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NE681
transistor "micro-x" "marking" 102
laser drive ic 3656
4558 L
IC 2030 PIN CONNECTIONS
LB 1639
mje 3009
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PDF
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transistor fn 1016
Abstract: SN74HC1G00 SCAD001D sn74154 SN74ALVC1G32 JK flip flop IC SDFD001B philips 18504 FB 3306 CMOS Data Book Texas Instruments Incorporated
Text: W O R L D L Logic Selection Guide August 1998 E A D E R I N L O G I C P R O D U C T S LOGIC OVERVIEW 1 FUNCTIONAL INDEX 2 FUNCTIONAL CROSSĆREFERENCE 3 DEVICE SELECTION GUIDE 4 3 LOGIC SELECTION GUIDE AUGUST 1998 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or
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