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    SOT-23 MARKING Y14 Search Results

    SOT-23 MARKING Y14 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 MARKING Y14 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors LMBTA42LT1G LMBTA43LT1G ƽ Pb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LMBTA42LT1G 1D SOT-23 3000/Tape&Reel LMBTA42LT3G 1D SOT-23 10000/Tape&Reel


    Original     		PDF LMBTA42LT1G LMBTA43LT1G OT-23 3000/Tape LMBTA42LT3G 10000/Tape

    5B1 SOT23

    Abstract: 5B1 SOT-23 sot23 marking 5c1 marking 5b1
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. LBC807-16LT1 DEVICE MARKING AND ORDERING INFORMATION Device Marking LBC807-16LT1 LBC807-16LT1G 5A1 SOT-23 5B1 SOT-23 5B1 Pb-Free LBC807-40LT1 LBC807-40LT1G


    Original     		PDF LBC807-16LT1 LBC807-16LT1G OT-23 LBC807-40LT1 LBC807-40LT1G LBC807-25LT1 LBC807-25LT1G 5B1 SOT23 5B1 SOT-23 sot23 marking 5c1 marking 5b1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Switching Diode ƽ Pb-Free Package is available. LBAS16LT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LBAS16LT1G A6 SOT-23 3000/Tape&Reel LBAS16LT3G A6 SOT-23 10000/Tape&Reel 3 1 2 MAXIMUM RATINGS Rating


    Original     		PDF LBAS16LT1G OT-23 3000/Tape LBAS16LT3G 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: KST42 / KST43 NPN Epitaxial Silicon Transistor Features • High-Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Marking Package Packing Method KST42MTF 1D SOT-23 3L Tape and Reel KST43MTF 1E SOT-23 3L Tape and Reel


    Original     		PDF KST42 KST43 OT-23 KST42MTF OT-23 KST43MTF

    1d sot-23

    Abstract: M1E SOT-23 LMBTA43LT1G LMBTA43LT1 LMBTA42LT1G MARK CB SOT23 SOT-23 m1e
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors LMBTA42LT1G LMBTA43LT1G ƽ We declare that the material of product compliance with RoHS requirements. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LMBTA42LT1G 1D SOT-23 3000/Tape&Reel


    Original     		PDF LMBTA42LT1G LMBTA43LT1G OT-23 3000/Tape LMBTA42LT3G 10000/Tape 1d sot-23 M1E SOT-23 LMBTA43LT1G LMBTA43LT1 LMBTA42LT1G MARK CB SOT23 SOT-23 m1e

    CQ 523

    Abstract: MARKING CODE cq sot-89
    Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon L2SC2411KXLT1G FEATURE 3 ƽEpitaxial planar type ƽComplementary to L2SA1036K 1 ƽPb-Free package is available 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking SOT– 23 TO–236AB Shipping


    Original     		PDF L2SC2411KXLT1G L2SA1036K 236AB) L2SC2411KPLT1G 3000/Tape L2SC2411KPLT3G 10000/Tape L2SC2411KQLT1G L2SC2411KQLT3G CQ 523 MARKING CODE cq sot-89

    A6 sot-23

    Abstract: LBAS16LT1G SOT 23 a6 diode
    Text: LESHAN RADIO COMPANY, LTD. Switching Diode ƽ LBAS16LT1G We declare that the material of product compliance with RoHS requirements. DEVICE MARKING AND ORDERING INFORMATION Device 3 Marking Package Shipping LBAS16LT1G A6 SOT-23 3000/Tape&Reel LBAS16LT3G A6


    Original     		PDF LBAS16LT1G OT-23 3000/Tape LBAS16LT3G 10000/Tape A6 sot-23 LBAS16LT1G SOT 23 a6 diode

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Switching Diode ƽ LBAS16LT1G We declare that the material of product compliance with RoHS requirements. DEVICE MARKING AND ORDERING INFORMATION Device 3 Marking Package Shipping LBAS16LT1G A6 SOT-23 3000/Tape&Reel LBAS16LT3G A6


    Original     		PDF LBAS16LT1G OT-23 3000/Tape LBAS16LT3G 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L8550PLT1G Series FEATURE We declare that the material of product compliance with RoHS requirements. 3 1 2 DEVICE MARKING AND ORDERING INFORMATION Device SOT– 23 Shipping Marking L8550PLT1G


    Original     		PDF L8550PLT1G 3000/Tape L8550PLT3G 10000/Tape L8550QLT1G L8550QLT3G L8550RLT1G

    L8550QLT1G

    Abstract: L8550PLT1G L8550RLT1G L8550SLT1G sot-23 1Yd L8550 L8550SLT1
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L8550PLT1G Series FEATURE We declare that the material of product compliance with RoHS requirements. 3 1 2 DEVICE MARKING AND ORDERING INFORMATION Device SOT– 23 Shipping Marking L8550PLT1G


    Original     		PDF L8550PLT1G 3000/Tape L8550PLT3G 10000/Tape L8550QLT1G L8550QLT3G L8550RLT1G L8550QLT1G L8550PLT1G L8550RLT1G L8550SLT1G sot-23 1Yd L8550 L8550SLT1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21SLT1G 3 FETURE • We declare that the material of product 1 compliance with RoHS requirements. 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking SOT– 23 TO–236AB Shipping LBAS21SLT1G


    Original     		PDF LBAS21SLT1G 236AB) 3000/Tape LBAS21SLT3G 10000/Tape OT-23

    L2SC2411KRLT1G

    Abstract: L2SC2411KPLT1 L2SC2411KPLT1G L2SC2411KQLT1 L2SC2411KQLT1G L2SC2411KRLT1 L2SC2411KLT1
    Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon L2SC2411K*LT1 FEATURE 3 ƽEpitaxial planar type ƽComplementary to L2SA1036K 1 ƽPb-Free package is available 2 DEVICE MARKING AND ORDERING INFORMATION Device SOT– 23 TO–236AB Marking Shipping


    Original     		PDF L2SC2411K L2SA1036K 236AB) L2SC2411KPLT1 3000/Tape L2SC2411KPLT1G L2SC2411KQLT1 L2SC2411KQLT1G L2SC2411KRLT1G L2SC2411KPLT1 L2SC2411KPLT1G L2SC2411KQLT1 L2SC2411KQLT1G L2SC2411KRLT1 L2SC2411KLT1

    178 15T

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9015TLT1G FEATURE 3 ƽComplementary to L9014. ƽPb-Free package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping SOT– 23 L9015TLT1G 15T 3000/Tape&Reel L9015TLT3G


    Original     		PDF L9015TLT1G L9014. 3000/Tape L9015TLT3G 10000/Tape 178 15T

    LBAS21SLT1G

    Abstract: JT MARKING JT MARKING SOT-23
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21SLT1G 3 FETURE • We declare that the material of product 1 compliance with RoHS requirements. 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking SOT– 23 Shipping LBAS21SLT1G JT 3000/Tape&Reel


    Original     		PDF LBAS21SLT1G 3000/Tape LBAS21SLT3G 10000/Tape OT-23 LBAS21SLT1G JT MARKING JT MARKING SOT-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21CLT1G FEATURE 3 • We declare that the material of product 1 compliance with RoHS requirements. 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking SOT– 23 Shipping LBAS21CLT1G JU 3000/Tape&Reel


    Original     		PDF LBAS21CLT1G 3000/Tape LBAS21CLT3G 10000/Tape OT-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistor FEATURE LMBT5401LT1G ƽPb-Free package is available. 3 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 1 LMBT5401LT1G 2L 3000/Tape&Reel LMBT5401LT3G 2L 10000/Tape&Reel 2 SOT– 23 MAXIMUM RATINGS


    Original     		PDF LMBT5401LT1G 3000/Tape LMBT5401LT3G 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G LBSS123LT1G FEATURE 3 ƽ Pb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device SOT-23 Marking Shipping LBSS123LT1G SA 3000/Tape&Reel LBSS123LT3G SA 10000/Tape&Reel 1 Gate


    Original     		PDF LBSS123LT1G OT-23 3000/Tape LBSS123LT3G 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G LBSS123LT1G 3 FEATURE ƽ Pb-Free Package is available. 1 DEVICE MARKING AND ORDERING INFORMATION Device 2 SOT-23 Marking Shipping LBSS123LT1G SA 3000/Tape&Reel LBSS123LT3G SA 10000/Tape&Reel 1 Gate


    Original     		PDF LBSS123LT1G OT-23 3000/Tape LBSS123LT3G 10000/Tape 195mm 150mm

    LBSS123LT1G

    Abstract: LBSS123LT3G
    Text: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G LBSS123LT1G FEATURE 3 ƽ Pb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device SOT-23 Marking Shipping LBSS123LT1G SA 3000/Tape&Reel LBSS123LT3G SA 10000/Tape&Reel 1 Gate


    Original     		PDF LBSS123LT1G OT-23 3000/Tape LBSS123LT3G 10000/Tape 195mm 150mm LBSS123LT1G LBSS123LT3G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LMBF170LT1G LMBF170LT1G 3 FEATURE 1 ƽ Pb-Free Package is available. 2 SOT-23 DEVICE MARKING AND ORDERING INFORMATION Device Marking Drain 3 Shipping LMBF170LT1G 6Z 3000/Tape&Reel LMBF170LT3G 6Z 10000/Tape&Reel


    Original     		PDF LMBF170LT1G OT-23 3000/Tape LMBF170LT3G 10000/Tape

    JS SOT23-3

    Abstract: sot23 marking JR BAS20LT1 BAS21 BAS21DW5T1 BAS21LT1 BAS19 BAS19LT1 BAS20 MARKING JS sot-23
    Text: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT-23 3 CATHODE 1 ANODE SC-88A


    Original     		PDF BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 BAS19LT1 BAS20LT1 BAS21LT1 OT-23 SC-88A JS SOT23-3 sot23 marking JR BAS20LT1 BAS21 BAS21DW5T1 BAS21LT1 BAS19 BAS19LT1 BAS20 MARKING JS sot-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor L2SD1781K*LT1 3 COLLECTOR 1 3 BASE 2 EMITTER 1 2 SOT– 23 FAbsolute maximum ratings Ta = 25_C FDEVICE MARKING L2SD1781KRLT1=AFR L2SD1781KQLT1=AFQ FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE


    Original     		PDF L2SD1781K L2SD1781KRLT1 L2SD1781KQLT1 L2SD1781K-1/4 L2SD1781K-2/4 L2SD1781K-3/4 OT-23

    2n5551

    Abstract: 2N5551 SOT23
    Text: 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers. 2N5551 MMBT5551 3 2 TO-92 1 SOT-23 Marking: 3S 1. Base 2. Emitter 3. Collector Ordering Information 1


    Original     		PDF 2N5551 MMBT5551 2N5551 OT-23 2N5551TA 2N5551TFR 2N5551TF 2N5551BU 2N5551 SOT23

    MMBTH24L

    Abstract: MMBT3960 sot-23 Marking KN MMBTH81L MLL34 MMBT3960L SOT-23 MARKING D sot-23 Marking 3D MMBT3960AL
    Text: MOT OROL A SC XSTRS/R F 4bE D • b3b72SiJ OO^bSGB ? ■ MOTb 'T ^ - O j SOT-23 TRANSISTORS (continued) S w itch in g T ran sisto rs Pinout: 1-Base, 2-Emitter, 3-Collector Devices are listed in order of descending f f . Switching Time (ns) Device hre Marking


    OCR Scan     		PDF b3b72SiJ OT-23 MMBT2369L BSV52L MMBT2222L MMBT2222AI. MMBT3904T MMBT3638 MBT3640L MBT4403L MMBTH24L MMBT3960 sot-23 Marking KN MMBTH81L MLL34 MMBT3960L SOT-23 MARKING D sot-23 Marking 3D MMBT3960AL