sot-23 2L
Abstract: No abstract text available
Text: UTC MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 2 1 APPLICATIONS 3 *Telephone Switching Circuit *Amplifier MARKING SOT-23
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Original
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MMBT5401
-150V
350mW
OT-23
QW-R206-011
sot-23 2L
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PDF
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sot-23 Marking 2L
Abstract: MMBT5401 sot23 marking 2l
Text: UTC MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 2 1 3 APPLICATIONS *Telephone Switching Circuit *Amplifier SOT-23 MARKING
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Original
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MMBT5401
-150V
350mW
OT-23
QW-R206-011
sot-23 Marking 2L
MMBT5401
sot23 marking 2l
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PDF
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Mosfet
Abstract: 2N7002KB
Text: 2N7002KB 60V N-Channel MOSFET Main Product Characteristics VDSS 60V RDS on 2Ω(max.) ID 0.3A SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and
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Original
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2N7002KB
OT-23
Mosfet
2N7002KB
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PDF
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Mosfet
Abstract: 2N7002KU
Text: 2N7002KU 60V N-Channel MOSFET Main Product Characteristics VDSS 60V RDS on 3Ω(max.) ID 0.3A SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and
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Original
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2N7002KU
OT-23
Mosfet
2N7002KU
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PDF
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MMBT5551A
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain . 2 1 3 MARKING G1 SOT-23 *Pb-free plating product number:MMBT5551L PIN CONFIGURATION
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Original
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MMBT5551
OT-23
MMBT5551L
MMBT5551-AE3-R
MMBT5551L-AE3-R
OT-23
QW-R206-010
MMBT5551A
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PDF
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Mosfet
Abstract: SSF2341E marking 2341E 2341E marking 4a sot23
Text: SSF2341E 20V P-Channel MOSFET Main Product Characteristics VDSS -20V RDS on 37mΩ (typ.) ID -4A ① SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and
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Original
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SSF2341E
OT-23
for2341E
2341E
Mosfet
SSF2341E
marking 2341E
2341E
marking 4a sot23
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PDF
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MMBT5401
Abstract: MMBT5401-AE3-R MMBT5401L MMBT5401L-AE3-R
Text: UNISONIC TECHNOLOGIES CO., MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES 2 *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 1 MARKING 3 2L SOT-23 *Pb-free plating product number:MMBT5401L
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Original
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MMBT5401
-150V
350mW
OT-23
MMBT5401L
MMBT5401-AE3-R
MMBT5401L-AE3-R
QW-R206-011
MMBT5401
MMBT5401L
MMBT5401L-AE3-R
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PDF
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Mosfet
Abstract: SSF3341 sot-23 Marking mosfet p-channel
Text: SSF3341 30V P-Channel MOSFET Main Product Characteristics D VDSS -30V RDS on 42mΩ (typ.) ID -4.2A G S ① SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and
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Original
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SSF3341
OT-23
reliSF3341
Mosfet
SSF3341
sot-23 Marking mosfet p-channel
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PDF
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Mosfet
Abstract: SSF3339
Text: SSF3339 30V P-Channel MOSFET Main Product Characteristics D VDSS -30V RDS on 37mΩ (typ.) ID -4.1A G S ① SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and
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Original
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SSF3339
OT-23
reliSF3339
Mosfet
SSF3339
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PDF
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Mosfet
Abstract: SSF2301 2301 marking sot-23
Text: SSF2301 20V P-Channel MOSFET Main Product Characteristics D VDSS -20V RDS on 60mΩ (typ.) ID -3A G S ① SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and
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Original
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SSF2301
OT-23
reliabSSF2301
Mosfet
SSF2301
2301 marking sot-23
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PDF
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Amplifier transistor
Abstract: No abstract text available
Text: UTC MMBTA06/56 AMPLIFIER TRANSISTOR NPN MMBTA06 PNP MMBTA56 FEATURES *Collector-Emitter Voltage: VCEO=80V *Collector Dissipation: PD=350mW 3 1 MARKING MMBTA06 MMBTA56 2 2G 1G SOT-23 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS TA=25°C PARAMETER
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Original
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MMBTA06/56
MMBTA06
MMBTA56
350mW
OT-23
PARAMETEQW-R206-041
Amplifier transistor
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PDF
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QW-R206-041
Abstract: MARKING 1G TRANSISTOR
Text: UTC MMBTA06/56 AMPLIFIER TRANSISTOR NPN MMBTA06 PNP MMBTA56 FEATURES *Collector-Emitter Voltage: VCEO=80V *Collector Dissipation: PD=350mW 3 1 MARKING MMBTA06 MMBTA56 2 2G 1G SOT-23 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS TA=25°C PARAMETER
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Original
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MMBTA06/56
MMBTA06
MMBTA56
350mW
OT-23
QW-R206-041
MARKING 1G TRANSISTOR
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PDF
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BAV170
Abstract: JXs sot
Text: Silicon Low Leakage Diode Array BAV170 • Low Leakage applications • Medium speed switching times • Common cathode Type Marking O rdering code 8-m m tape Package BAV170 JXs Q62702-A920 SOT 23 Maximum Ratings D escription Symbol Reverse voltage VR BAV170
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OCR Scan
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BAV170
Q62702-A920
BAV170
100ns
JXs sot
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PDF
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MMBT3906 UTC
Abstract: No abstract text available
Text: UTC MMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3904 2 1 MARKING 2A 3 SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
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Original
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MMBT3906
350mW
MMBT3904
OT-23
QW-R206-013
MMBT3906 UTC
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PDF
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Marking 1A
Abstract: No abstract text available
Text: UTC MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3906 2 1 MARKING 3 1A SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
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Original
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MMBT3904
350mW
MMBT3906
OT-23
QW-R206-012
Marking 1A
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PDF
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SMBD7000C
Abstract: IRC 7000
Text: Silicon Switching Diode Array SMBD 7000 • For high-speed sw itching applications • Connected in series Type Marking Ordering code for versions in bulk Ordering code for versions on 8-mm tape Package SMBD 7000 S5C upon request upon request SOT 23 Maximum ratings
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OCR Scan
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PDF
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mmbt3904 complementary
Abstract: MMBT3904 MMBT3906 6030v
Text: UTC MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3906 2 1 MARKING 3 1A SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
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Original
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MMBT3904
350mW
MMBT3906
OT-23
QW-R206-012
100MHz
mmbt3904 complementary
MMBT3904
MMBT3906
6030v
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PDF
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Untitled
Abstract: No abstract text available
Text: UTC MMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3904 2 1 MARKING 3 2A SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
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Original
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MMBT3906
350mW
MMBT3904
OT-23
QW-R206-013
-10mA
-50mA
100MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: FJV42 NPN High Voltage Transistor 3 2 1 SOT-23 Marking: 1DF 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 350 V VCEO Collector-Emitter Voltage 350 V VEBO
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FJV42
OT-23
FJV42
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PDF
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s72 sot 23
Abstract: transistor marking s72 2N7019 2N7002 MARKING s72 2N7002 S72 SOT-23 s72 SOT23 Transistor s72 sot23 2n7002 transistor s72 S72 Transistor
Text: N & P CHANNEL MOSFETS ENHANCEMENT MODE N CHANNEL SOT-23 Cont. D-S Drain Voltage Current Type Marking V max A max BS870 S70 60 0.25 2N7002 S72 60 0.25 *: Pulse test width 80µs, 1% duty factor. Pwr. Dispn. TC=25˚C W max 0.31 0.31 Gate Thr. Volt. VGS=VDS ID=ImA
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Original
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BS870
2N7002
OT-23
BS850
22N7002
BS170
s72 sot 23
transistor marking s72
2N7019
2N7002 MARKING s72
2N7002 S72 SOT-23
s72 SOT23
Transistor s72 sot23
transistor s72
S72 Transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: Si2320DS New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 7 @ VGS = 10 V "0.28 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2320DS (D0)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Original
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Si2320DS
O-236
OT-23)
S-63640--Rev.
01-Nov
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PDF
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Untitled
Abstract: No abstract text available
Text: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V - 20 rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V - 2.3 0.190 @ VGS = - 2.5 V - 1.9 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2301DS-T1 2 Top View Si2301DS (A1)* *Marking Code
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Original
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Si2301DS
O-236
OT-23)
Si2301DS-T1
08-Apr-05
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PDF
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A96V
Abstract: Si2326DS
Text: Si2326DS New Product Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2326DS (D6)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Original
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Si2326DS
O-236
OT-23)
S-2381--Rev.
23-Oct-00
A96V
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PDF
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Si2320DS
Abstract: No abstract text available
Text: Si2320DS New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 7 @ VGS = 10 V "0.28 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2320DS (D0)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Original
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Si2320DS
O-236
OT-23)
18-Jul-08
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PDF
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