SO32-3
Abstract: IDT71024 IDT71024S70 S0323
Text: IDT71024S70 CMOS STATIC RAM 1 MEG 128K x 8-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 CMOS static RAM • Equal access and cycle times — Commercial: 70ns • Two Chip Selects plus one Output Enable pin • Bidirectional inputs and outputs directly TTL-compatible
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IDT71024S70
IDT71024
576-bit
200mV
300-mil
SO32-2)
400-mil
SO32-3)
SO32-3
IDT71024S70
S0323
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Untitled
Abstract: No abstract text available
Text: CMOS Static RAM 1 Meg 128K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71024S Description 128K x 8 advanced high-speed CMOS static RAM Commercial (0°C to +70°C), Industrial (–40°C to +85°C) Equal access and cycle times — Commercial and Industrial: 12/15/20ns
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IDT71024S
12/15/20ns
IDT71024
576-bit
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Untitled
Abstract: No abstract text available
Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times
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IDT71V124SA
10/12/15ns
12/15ns
32-pin
400-mil
IDT71V124
576-bit
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IDT71V124
Abstract: IDT71V124SA 71V124SA
Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times
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PDF
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IDT71V124SA
10/12/15/20ns
32-pin
400-mil
IDT71V124
576-bit
IDT71V124SA
71V124SA
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71024S15
Abstract: IDT71024 71024
Text: IDT71024 CMOS STATIC RAM 1 MEG 128K x 8-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • Commercial (0° to 70°C), Industrial (-40° to 85°C) and Military (-55° to 125°C) temperature options
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IDT71024
15/17/20/25ns
15/20ns
12/15/17/20ns
MIL-STD-883,
IDT71024
576-bit
300-mil
SO32-2)
400-mil
71024S15
71024
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SO32-2
Abstract: IDT71V124 IDT71V124SA SO32
Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA/HSA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times
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PDF
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IDT71V124SA/HSA
10/12/15/20ns
32-pin
400-mil
IDT71V124
576-bit
SO32-2
IDT71V124SA
SO32
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Untitled
Abstract: No abstract text available
Text: IDT71024 CMOS Static RAM 1 Meg 128K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description 128K x 8 advanced high-speed CMOS static RAM Commercial (0°C to +70°C), Industrial (–40°C to +85°C) Equal access and cycle times — Commercial and Industrial: 12/15/20ns
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Original
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PDF
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12/15/20ns
IDT71024
IDT71024
576-bit
x4033
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71v124
Abstract: IDT71V124 IDT71V124SA
Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times
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Original
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PDF
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IDT71V124SA
10/12/15/20ns
12/15/20ns
32-pin
400-mil
IDT71V124
576-bit
x4033
71v124
IDT71V124SA
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SO32-3
Abstract: SO-323 IDT71V124 IDT71V124SA SO32
Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times
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Original
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PDF
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IDT71V124SA
10/12/15ns
12/15ns
32-pin
400-mil
IDT71V124
576-bit
SO32-3
SO-323
IDT71V124SA
SO32
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Untitled
Abstract: No abstract text available
Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout IDT71V124SA Features Description ◆ The IDT71V124 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative
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IDT71V124SA
IDT71V124
576-bit
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Untitled
Abstract: No abstract text available
Text: CMOS Static RAM 1 Meg 128K x 8-Bit IDT71024S Features Description ◆ The IDT71024 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative
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IDT71024S
IDT71024
576-bit
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6116 CMOS RAM
Abstract: IDT71024 71024S15
Text: CMOS Static RAM 1 Meg 128K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71024 Description 128K x 8 advanced high-speed CMOS static RAM Commercial (0°C to +70°C), Industrial (–40°C to +85°C) Equal access and cycle times — Commercial and Industrial: 12/15/20ns
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Original
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PDF
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IDT71024
12/15/20ns
IDT71024
576-bit
hig20ns
6116 CMOS RAM
71024S15
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SO32-3
Abstract: IDT71V124 IDT71V124SA SO32-2
Text: 3.3V CMOS STATIC RAM 1 MEG 128K x 8 CENTER POWER & GROUND PINOUT IDT71V124SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise • Equal access and cycle times
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IDT71V124SA
10/12/15/20ns
32-pin
400-mil
32pin
IDT71V124
576-bit
200mV
71V124
SO32-3
IDT71V124SA
SO32-2
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IDT71024
Abstract: 71024S15
Text: CMOS Static RAM 1 Meg 128K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71024 Description 128K x 8 advanced high-speed CMOS static RAM Commercial (0°C to +70°C), Industrial (–40°C to +85°C) Equal access and cycle times — Commercial and Industrial: 12/15/20ns
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Original
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PDF
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IDT71024
12/15/20ns
IDT71024
576-bit
71024S15
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|
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IDT71V124
Abstract: IDT71V124SA
Text: 3.3V CMOS STATIC RAM 1 MEG 128K x 8 CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JEDEC revolutionary pinout (center power/GND) for reduced noise
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IDT71V124SA
10/12/15/20ns
32-pin
400-mil
32pin
IDT71V124
576-bit
200mV
71V124
IDT71V124SA
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K6X0808C1D-BF55
Abstract: HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L
Text: cross_reference Density Organization Alliance Alliance Part Number Alliance Package Alliance Speed Samsung Samsung Part Number Cypress Cypress Part Number Cypress Package Cypress Package Code Cypress Speed IDT Part Number IDT Package IDT Package Code IDT Speed ISSI
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CY7C128A-15VC
CY7C128A-15SC
CY7C167A-15PC
CY7C168A-15PC
24PIN
20PIN
300MIL
K6X0808C1D-BF55
HY6264P
AS6C1008-55SIN
samsung p28
K6R4016V1D-UC10
as6c4008-55sin
HYNIX
IS61LV25616AL-10KLI
GS71116AGP-10
uPD431000ACZ-70L
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IDT71024
Abstract: IDT71256 pentium 1993 Intel Pentium 66MHz 1993
Text: Application Pentium Secondary Burst Cache Design Brief Using the IDT71024 as Cache-Data SRAMs AB-04 and the IDT71256 (as the Cache-Tag SRAM) Integrated Device Technology, Inc. INTRODUCTION The objective of this application brief is to highlight the use of the IDT71024 (128K x 8 SRAM) as the Cache-Data SRAM
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IDT71024
AB-04
IDT71256
IDT71024
A5A19
IDT71256
pentium 1993
Intel Pentium 66MHz 1993
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Untitled
Abstract: No abstract text available
Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times
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Original
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PDF
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IDT71V124SA
10/12/15/20ns
32-pin
400-mil
IDT71V124
576-bit
|
IDT71V124
Abstract: IDT71V124SA
Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA/HSA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times
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Original
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PDF
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IDT71V124SA/HSA
10/12/15/20ns
32-pin
400-mil
IDT71V124
576-bit
IDT71V124SA
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71024S12
Abstract: 71024S15 IDT71024 SO32-2 2964
Text: CMOS Static RAM 1 Meg 128K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71024S/MS Description 128K x 8 advanced high-speed CMOS static RAM Commercial (0°C to +70°C), Industrial (–40°C to +85°C) Equal access and cycle times — Commercial and Industrial: 12/15/20ns
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IDT71024S/MS
12/15/20ns
IDT71024
576-bit
300-mil
SO32-2)
400-mil
SO32-3)
71024S12
71024S15
SO32-2
2964
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SO32-3
Abstract: 71024S15 IDT71024
Text: CMOS Static RAM 1 Meg 128K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71024 Description 128K x 8 advanced high-speed CMOS static RAM Commercial (0°C to +70°C), Industrial (–40°C to +85°C) Equal access and cycle times — Commercial and Industrial: 12/15/20ns
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Original
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PDF
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IDT71024
12/15/20ns
IDT71024
576-bit
SO32-3
71024S15
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71024S15
Abstract: IDT71024 DSC101
Text: IDT71024 CMOS STATIC RAM 1 MEG 128K x 8-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • Equal access and cycle times — Military: 15/17/20/25ns — Commercial: 12/15/17/20ns • Two Chip Selects plus one Output Enable pin
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PDF
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IDT71024
15/17/20/25ns
12/15/17/20ns
32-pin
MIL-STD-883,
IDT71024
576-bit
400-mil
71024S15
DSC101
|
Untitled
Abstract: No abstract text available
Text: 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Center Power & Ground Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V124SA Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Equal access and cycle times
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Original
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PDF
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IDT71V124SA
10/12/15ns
12/15ns
32-pin
400-mil
IDT71V124
576-bit
|
Untitled
Abstract: No abstract text available
Text: IDT71024 CMOS Static RAM 1 Meg 128K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description 128K x 8 advanced high-speed CMOS static RAM Commercial (0°C to +70°C), Industrial (–40°C to +85°C) Equal access and cycle times — Commercial and Industrial: 12/15/20ns
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Original
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PDF
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IDT71024
12/15/20ns
IDT71024
576-bit
x4033
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