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    SMD TRANSISTOR PD2 Search Results

    SMD TRANSISTOR PD2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR PD2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PD20010

    Abstract: PD20010-E AN1294 J-STD-020B
    Text: PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package ■ ESD protection


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    PD20010-E 2002/95/EC PowerSO-10RF PD20010-E PD20010 AN1294 J-STD-020B PDF

    PD20010-E

    Abstract: PD20010
    Text: PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package


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    PD20010-E 2002/95/EC PowerSO-10RF PD20010-E PD20010 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD20015-E RF power transistor, LdmoST family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package ■ ESD protection ■ In compliance with the 2002/95/EC european


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    PD20015-E 2002/95/EC PowerSO-10RF PD20015-E PDF

    AN1294

    Abstract: JESD97 J-STD-020B PD20015-E
    Text: PD20015-E PD20015S-E RF power transistor - LdmoST family Preliminary Data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package ■ ESD protection ■ In compliance with the 2002/95/EC european


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    PD20015-E PD20015S-E 2002/95/EC PowerSO-10RF PD20015-E AN1294 JESD97 J-STD-020B PDF

    PD20015-E

    Abstract: PD-20015
    Text: PD20015-E RF power transistor, LdmoST family N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package


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    PD20015-E 2002/95/EC PowerSO-10RF PD20015-E PD-20015 PDF

    14005

    Abstract: PD20015 AN1294 J-STD-020B PD20015-E
    Text: PD20015-E PD20015S-E RF power transistor, LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package ■ ESD protection ■ In compliance with the 2002/95/EC european


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    PD20015-E PD20015S-E 2002/95/EC PowerSO-10RF PD20015-E 14005 PD20015 AN1294 J-STD-020B PDF

    smd transistor A7p

    Abstract: smd transistor A6p smd transistor A4p A7N transistor A7p smd transistor SMD A7p smd transistor A7n A6P SMD smd diode A1p smd A7p
    Text: LF Driver ATA5279 with Channel Extension Using NMOS Antenna Multiplexer 1. Description Several automotive Passive Entry applications require more than the six LF antennas usually supported by the ATA5279 LF driver. Figure 1-1 on page 2 shows how to expand the device to drive a greater number 9 of LF antennas. In this proposal, an


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    ATA5279 ATA5279 smd transistor A7p smd transistor A6p smd transistor A4p A7N transistor A7p smd transistor SMD A7p smd transistor A7n A6P SMD smd diode A1p smd A7p PDF

    HIR26-21C

    Abstract: w32 smd transistor w32 smd transistor 143 17-21SYGC/S530-E2/TR8 3A-01-B74-Y9C-A1S1T1DH-AM ELM-1882-UYWB 19-223SURSYGC/S530-A3/E3/TR8 l289 itr8102 w27 smd transistor
    Text: Everlight Electronics was established in 1983 and plays a critical role in the history of Taiwan’s LED industry. It has become the leader in the Taiwan LED packaging industry. Although facing competition from numerous worldwide Optoelectronic suppliers, Everlight


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    CT1003Q43-V2 HIR26-21C w32 smd transistor w32 smd transistor 143 17-21SYGC/S530-E2/TR8 3A-01-B74-Y9C-A1S1T1DH-AM ELM-1882-UYWB 19-223SURSYGC/S530-A3/E3/TR8 l289 itr8102 w27 smd transistor PDF

    induction cooker schematic diagram

    Abstract: schematic diagram induction cooker schematic diagram dc-ac welding inverter igbt SMD LED 5630 schematic diagram ac-dc welding inverter CIRCUIT induction cooker circuit diagram induction heating cooker induction cooker schematic optocoupler pc 817 ELEVATOR LOGIC CONTROL PLC
    Text: Optoisolation Products Selection Catalog 5 Multi-Channel & Bi-Directional Digital Optocoupler 6 High Speed Digital CMOS Logic Gate Optocoupler 7 20 MBd Logic Gate Optocoupler 8 10 MBd Logic Gate Optocoupler 9 8 MBd Logic Gate Optocoupler 10 5 MBd Logic Gate O ptocoupler


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    AV00-0029EN AV00-0051EN induction cooker schematic diagram schematic diagram induction cooker schematic diagram dc-ac welding inverter igbt SMD LED 5630 schematic diagram ac-dc welding inverter CIRCUIT induction cooker circuit diagram induction heating cooker induction cooker schematic optocoupler pc 817 ELEVATOR LOGIC CONTROL PLC PDF

    smd capa

    Abstract: p33k
    Text: Package 20275 120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET PD21120R6 Description Key Features The PD21120R6 is a 120–watt, internally matched LDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold


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    PD21120R6 PD21120R6 PCS6106TR PCC103BCT 1/16W smd capa p33k PDF

    PCC103BCT

    Abstract: 600B PD21120R6 smd transistor ne c2 microstrip resistor P10K
    Text: Package 20275 120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET PD21120R6 Description Key Features The PD21120R6 is a 120–watt, internally matched LDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold


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    PD21120R6 PD21120R6 PCC103BCT 1/16W PCC103BCT 600B smd transistor ne c2 microstrip resistor P10K PDF

    induction cooker schematic diagram

    Abstract: schematic diagram dc-ac welding inverter igbt schematic diagram induction cooker relay 3500 2231 021 schematic diagram ac-dc welding inverter CIRCUIT CD4050 ic 16 pin diagram schematic diagram igbt inverter welding machine PLC ELEVATOR CONTROL sewing machine foot controller schematic diagram dc-ac welding inverter CIRCUIT
    Text: Optoisolation Products Selection Catalog Optoisolation Products 5 Multi-Channel & Bi-Directional Digital Optocoupler 6 High Speed Digital CMOS Logic Gate Optocoupler 7 20 MBd Logic Gate Optocoupler 8 10 MBd Logic Gate Optocoupler 10 8 MBd Logic Gate Optocoupler


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    AV00-0051EN AV00-0107EN induction cooker schematic diagram schematic diagram dc-ac welding inverter igbt schematic diagram induction cooker relay 3500 2231 021 schematic diagram ac-dc welding inverter CIRCUIT CD4050 ic 16 pin diagram schematic diagram igbt inverter welding machine PLC ELEVATOR CONTROL sewing machine foot controller schematic diagram dc-ac welding inverter CIRCUIT PDF

    DARLINGTON TRANSISTOR ARRAY

    Abstract: No abstract text available
    Text: EVERLIGHT. THE SOURCE OF LIGHT. EVERLIGHT illuminates the way for many of the world’s brightest companies. Acclaimed as a premiere global solution provider in the opto-semiconductor industry and held in high regard as a reliable partner for many of the world’s leading electronics companies,


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    PDF

    6 Pin LED PIRANHA

    Abstract: everlight 50-215 smd transistor 2T EHP-A09K-BRTT-5670HEAFAD9K-1T8-AM PLR262 19-237A/R6GHBHC-B01/2T IRM-3638M-X
    Text: CATALOGUE 2014-2015 OPTOELECTRONIC COMPONENTS www.everlight.com EVERLIGHT THE SOURCE OF LIGHT EVERLIGHT illuminates the way for many of the world’s brightest companies. Acclaimed as a premiere global solution provider in the opto-semiconductor industry and held in high regard as a reliable


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    D-85737 SE-573 6 Pin LED PIRANHA everlight 50-215 smd transistor 2T EHP-A09K-BRTT-5670HEAFAD9K-1T8-AM PLR262 19-237A/R6GHBHC-B01/2T IRM-3638M-X PDF

    ACPL-C797

    Abstract: ACPL-H342 ACPL-K370 OPTOCOUPLER Hcpl 3120 schematic diagram of electric cookers A244V schematic diagram dc-ac inverter sensor schematic diagram solar microinverter igbt gate driver circuit schematic hcpl-3120 schematic diagram dc-ac welding inverter igbt
    Text: Optoisolation and Optical Sensor Products Selection Catalog Your Imagination, Our Innovation Sense • Illuminate • Connect Optoisolation Products 9 Multi-Channel & Bi-Directional Digital Optocoupler 10 High Speed Digital CMOS Logic Gate Optocoupler 12 20 MBd Logic Gate Optocoupler


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    AV00-0166EN AV00-0254EN ACPL-C797 ACPL-H342 ACPL-K370 OPTOCOUPLER Hcpl 3120 schematic diagram of electric cookers A244V schematic diagram dc-ac inverter sensor schematic diagram solar microinverter igbt gate driver circuit schematic hcpl-3120 schematic diagram dc-ac welding inverter igbt PDF

    hcplj312 cross reference

    Abstract: acpl-c87 avago encoder 0003 SMD LED Driver no isolate schematic diagram igbt inverter welding machine ACPL-071L
    Text: Optoisolation and Optical Sensor Products Selection Guide Your Imagination, Our Innovation Sense • Illuminate • Connect Optoisolation Products 5 Quick Guide to Direct Upgrades 10 Product Selection Trees 13 Multi-Channel & Bi-Directional Digital Optocoupler


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    AV00-0254EN hcplj312 cross reference acpl-c87 avago encoder 0003 SMD LED Driver no isolate schematic diagram igbt inverter welding machine ACPL-071L PDF

    smd transistor BQ 21

    Abstract: smd TRANSISTOR 1D DA ry SMD transistor smd transistor bq 22 transistor smd DA RQ TRANSISTOR SMD KN smd transistor kn smd transistor NG smd transistor bq 11 smd transistor bq 06
    Text: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK200-50X DESCRIPTION BUK204-50X QUICK REFERENCE DATA Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic surface mount


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    BUK200-50X BUK204-50X smd transistor BQ 21 smd TRANSISTOR 1D DA ry SMD transistor smd transistor bq 22 transistor smd DA RQ TRANSISTOR SMD KN smd transistor kn smd transistor NG smd transistor bq 11 smd transistor bq 06 PDF

    11n06

    Abstract: 11n06LT transistor smd YR 11N06L smd transistor 5c SMD footprint design smd transistor 5c l 5c smd transistor
    Text: Philips Semiconductors Preliminary specification PHP11N06LT, PHB11N06LT, PHD11N06LT TrenchMOS transistor Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Vdss —55 V • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance


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    PHP11N06LT, PHB11N06LT, PHD11N06LT PHP11N06LT T0220AB) 11n06 11n06LT transistor smd YR 11N06L smd transistor 5c SMD footprint design smd transistor 5c l 5c smd transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors N-channel TrenchMOS transistor Logic level FET SYMBOL FEATURES • • • • PHP21N06LT, PHB21N06LT PHD21N06LT QUICK REFERENCE DATA ’Trench’ technology Low on-state resistance Fast switching Logic level compatible


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    PHP21N06LT, PHB21N06LT PHD21N06LT PHP21N06LT T0220AB) PHB21N06LT OT428 OT428 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES BSH202 SYMBOL QUICK REFERENCE DATA VDS = -30 V • Low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package GENERAL DESCRIPTION


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    BSH202 BSH202 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES BSH206 SYMBOL QUICK REFERENCE DATA VDS = -12 V • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package


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    BSH206 BSH206 OT363 OT363 PDF

    BSH205

    Abstract: smd transistor JE 45 smd transistor ISS smd transistor JE
    Text: Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES BSH205 QUICK REFERENCE DATA SYMBOL VDS = -12 V • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package


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    BSH205 BSH205 smd transistor JE 45 smd transistor ISS smd transistor JE PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES BSH203 SYMBOL QUICK REFERENCE DATA • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package V DS = -3 0 V


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    BSH203 BSH203 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES BSH106 QUICK REFERENCE DATA SYMBOL d • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package V qs = 20 V


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    BSH106 BSH106 OT363 OT363 PDF