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    SMD TRANSISTOR 2300 Search Results

    SMD TRANSISTOR 2300 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    SMD TRANSISTOR 2300 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    equivalent ZO 607

    Abstract: 2sc5872 2SC5849 HTT1132E 702 smd transistor
    Text: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872


    Original     		HTT1132E REJ03G0008-0100Z 2SC5872 2SC5849 equivalent ZO 607 2sc5872 2SC5849 HTT1132E 702 smd transistor PDF

    702 transistor smd code

    Abstract: HTT1132E 853 smd 6-pin 2SC5849 2SC5872 equivalent ZO 607 smd transistor 805 239 0532 smd transistor 718 transistor smd 661 752
    Text: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872


    Original     		HTT1132E REJ03G0008-0100Z 2SC5872 2SC5849 702 transistor smd code HTT1132E 853 smd 6-pin 2SC5849 2SC5872 equivalent ZO 607 smd transistor 805 239 0532 smd transistor 718 transistor smd 661 752 PDF

    Untitled

    Abstract: No abstract text available
    Text: PMPB43XPE 20 V, single P-channel Trench MOSFET 30 November 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PMPB43XPE DFN2020MD-6 OT1220) PDF

    Untitled

    Abstract: No abstract text available
    Text: PMPB29XPE 20 V, single P-channel Trench MOSFET 5 December 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PMPB29XPE DFN2020MD-6 OT1220) PDF

    A1502

    Abstract: smd diode code GS Q67065-A7009 SMD CODE G13
    Text: Preliminary Data Sheet IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 2.7 mΩ ID


    Original     		IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB100N06S3L-03 IPI100N06S3L-03 PG-TO263-3-2 A1502 smd diode code GS Q67065-A7009 SMD CODE G13 PDF

    smd transistor 2300

    Abstract: TRANSISTOR SMD 2300 10 M 14A 2SK3483 transistor smd 49
    Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3483 TO-252 MAX. VGS = 4.5 V, ID = 14A +0.1 0.80-0.1 2.3 +0.1 0.60-0.1 3.80 RDS(on)2 = 59m Low Ciss: Ciss = 2300 pF TYP. +0.8 0.50-0.7 +0.15 5.55-0.15 MAX. (VGS = 10 V, ID = 14A) +0.15 0.50-0.15 RDS(on)1 = 52m


    Original     		2SK3483 O-252 smd transistor 2300 TRANSISTOR SMD 2300 10 M 14A 2SK3483 transistor smd 49 PDF

    3PN0402

    Abstract: IPB120N04S3-02 smd diode UM 08
    Text: Preliminary Data Sheet IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 2.0 mΩ ID 120 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified


    Original     		IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB120N04S3-02 IPI120N04S3-02 3PN0402 smd diode UM 08 PDF

    A SMD CODE MARKING

    Abstract: IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03 PG-TO263-3-2 SP0000-87982 3pn06 3PN0603
    Text: IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 3.0 mΩ ID 100 A • MSL1 up to 260°C peak reflow


    Original     		IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-87982 A SMD CODE MARKING IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03 PG-TO263-3-2 SP0000-87982 3pn06 3PN0603 PDF

    2n0404

    Abstract: SPB80N04S2-04 SPP80N04S2-04
    Text: SPP80N04S2-04 SPB80N04S2-04 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version •=175°C operating temperature ID • Avalanche rated P-TO263-3-2 40 V 3.4 mΩ 80 A P-TO220-3-1


    Original     		SPP80N04S2-04 SPB80N04S2-04 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4260 P-TO263-3-2 Q67040-S4257 2n0404 SPB80N04S2-04 SPP80N04S2-04 PDF

    2n0404

    Abstract: SPB80N04S2-04 SPP80N04S2-04
    Text: SPP80N04S2-04 SPB80N04S2-04 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version •=175°C operating temperature ID • Avalanche rated P-TO263-3-2 40 V 3.4 mΩ 80 A P-TO220-3-1


    Original     		SPP80N04S2-04 SPB80N04S2-04 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4260 P-TO263-3-2 Q67040-S4257 2n0404 SPB80N04S2-04 SPP80N04S2-04 PDF

    3pn06l03

    Abstract: 690 d80 IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 PG-TO263-3-2 SP0000-87978 SMD CODE G13
    Text: IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 2.7 mΩ ID 100 A • MSL1 up to 260°C peak reflow


    Original     		IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-87978 3pn06l03 690 d80 IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 PG-TO263-3-2 SP0000-87978 SMD CODE G13 PDF

    2n0404

    Abstract: Q67040-S4 Q67040-S4260
    Text: SPP80N04S2-04 SPB80N04S2-04 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID •=175°C operating temperature P-TO263-3-2 • Avalanche rated 40 V 3.6 mΩ 80 A P-TO220-3-1


    Original     		SPP80N04S2-04 SPB80N04S2-04 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4260 P-TO263-3-2 Q67040-S4257 2n0404 Q67040-S4 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPP80N04S2-04 SPB80N04S2-04 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 40 V RDS on max. SMD version 3.4 mΩ •=175°C operating temperature ID 80 A • Avalanche rated P-TO263-3-2 • Enhancement mode P-TO220-3-1


    Original     		SPP80N04S2-04 SPB80N04S2-04 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4260 2N0404 P-TO263-3-2 PDF

    040n06n

    Abstract: 037N06N IEC61249-2-21 PG-TO220-3 PG-TO262-3
    Text: Type IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 60 V • for sync. rectification, drives and dc/dc SMPS R DS on ,max (SMD) 3.7 mΩ • Excellent gate charge x R DS(on) product (FOM) ID 90 A previous engineering


    Original     		IPB037N06N3 IPI040N06N3 IPP040N06N3 IPP04xN06N IPI04xN06N IPB04xN06N IEC61249-2-21 040n06n 037N06N IEC61249-2-21 PG-TO220-3 PG-TO262-3 PDF

    3PN0402

    Abstract: IPB120N04S3-02 ANPS071E IPI120N04S3-02 IPP120N04S3-02 PG-TO263-3-2 infineon smd package
    Text: IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 2.0 mΩ ID 120 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN0402 IPI120N04S3-02 3PN0402 IPB120N04S3-02 ANPS071E IPI120N04S3-02 IPP120N04S3-02 PG-TO263-3-2 infineon smd package PDF

    3PN0603

    Abstract: ANPS071E IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03 PG-TO263-3-2
    Text: IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 3.0 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN0603 IPI100N06S3-03 3PN0603 ANPS071E IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03 PG-TO263-3-2 PDF

    024N06N

    Abstract: 021N06N PG-TO220-3 IEC61249-2-21 IPI024N06N3 G
    Text: Type IPB021N06N3 G IPI024N06N3 G IPP024N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max (SMD) 2.1 mΩ ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB021N06N3 IPI024N06N3 IPP024N06N3 IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 024N06N 021N06N PG-TO220-3 IEC61249-2-21 IPI024N06N3 G PDF

    smd transistor 2300

    Abstract: TRANSISTOR SMD 2300 transistor smd P.D 1 15A transistor 2SK3481
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3481 +0.1 1.27-0.1 TO-263 MAX. VGS = 10 V, ID = 15A RDS(on)2 = 58 m MAX. (VGS = 4.5 V, ID = 15 A) +0.2 4.57-0.2 5.60 RDS(on)1 = 50 m +0.2 8.7-0.2 Super low on-state resistance: +0.1 1.27-0.1 +0.2 15.25-0.2 Features


    Original     		2SK3481 O-263 smd transistor 2300 TRANSISTOR SMD 2300 transistor smd P.D 1 15A transistor 2SK3481 PDF

    037N06L

    Abstract: 034N06L IPI037N06L3 IEC61249-2-21 PG-TO-220-3 IPP037N06L3 G
    Text: Type IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 60 V • Ideal for high frequency switching and sync. rec. R DS on ,max (SMD) 3.4 mΩ • Optimized technology for DC/DC converters ID 90 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB034N06L3 IPI037N06L3 IPP037N06L3 IPP04xN06L IPI04xN06L IPB04xN06L IEC61249-2-21 037N06L 034N06L IEC61249-2-21 PG-TO-220-3 IPP037N06L3 G PDF

    024N06N

    Abstract: 021N06N JESD22 PG-TO220-3 IPP024N06N3 G 024N06 IPI024N06N3 G
    Text: IPB021N06N3 G Type IPI024N06N3 G IPP024N06N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 2.1 mΩ ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB021N06N3 IPI024N06N3 IPP024N06N3 PG-TO263-3 PG-TO262-3 PG-TO220-3 021N06N 024N06N 021N06N JESD22 PG-TO220-3 IPP024N06N3 G 024N06 IPI024N06N3 G PDF

    037N06L

    Abstract: 034N06L IPI037N06L3 034N06 13000 transistor TO-220 me 13000 transistor TO-220 JESD22 PG-TO-220-3
    Text: IPB034N06L3 G Type IPI037N06L3 G IPP037N06L3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 3.4 mΩ ID 90 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB034N06L3 IPI037N06L3 IPP037N06L3 IPP04xN06L IPI04xN06L IPB04xN06L PG-TO-263-3 037N06L 034N06L 034N06 13000 transistor TO-220 me 13000 transistor TO-220 JESD22 PG-TO-220-3 PDF

    040n06n

    Abstract: 037N06N 040n06 d90 smd JESD22 PG-TO220-3
    Text: IPB037N06N3 G Type IPI040N06N3 G IPP040N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R DS on product (FOM) V DS 60 V R DS(on),max (SMD) 3.7 mΩ ID 90 A • Very low on-resistance R DS(on)


    Original     		IPB037N06N3 IPI040N06N3 IPP040N06N3 IPP04xN06N IPI04xN06N IPB04xN06N PG-TO263-3 040n06n 037N06N 040n06 d90 smd JESD22 PG-TO220-3 PDF

    SMD transistor package code A64

    Abstract: No abstract text available
    Text: BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 3 — 28 February 2011 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz.


    Original     		BLF6G27-10; BLF6G27-10G IS-95 ACPR885k ACPR1980k BLF6G27-10 SMD transistor package code A64 PDF

    RF35

    Abstract: 10G SMD Transistor transistor 123
    Text: BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 3 — 28 February 2011 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz.


    Original     		BLF6G27-10; BLF6G27-10G IS-95 ACPR885k ACPR1980k BLF6G27-10 RF35 10G SMD Transistor transistor 123 PDF