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    SMD IC MARKING 1A Search Results

    SMD IC MARKING 1A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    SMD IC MARKING 1A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor smd marking KA

    Abstract: Marking KA 2SA1681 2SC4409 smd 1A smd marking KA smd marking TF
    Text: Transistors SMD Type Power Switching Applications 2SC4409 Features Low Collector Saturation Voltage: VCE sat = 0.5V(max)(IC = 1A) High Speed Switching Time: tstg = 500ns(typ.) Small Flat Package PC = 1.0 to 2.0W (mounted on a ceramic substrate) Complementary to 2SA1681


    Original     		PDF 2SC4409 500ns 2SA1681 100mA transistor smd marking KA Marking KA 2SA1681 2SC4409 smd 1A smd marking KA smd marking TF

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SA1681 Features Low Saturation Voltage: VCE sat = -0.5V(max)(IC = -1A) High Speed Switching Time: tstg = 300ns(typ.) Small Flat Package PC = 1.0 to 2.0W (mounted on a ceramic substrate) Complementary to 2SC4409 Absolute Maximum Ratings Ta = 25


    Original     		PDF 2SA1681 300ns 2SC4409 -10mA, -100mA

    SMD transistor 23

    Abstract: smd transistor marking 1A 2SA1681 la smd marking MARKING LA 1a smd transistor 2SC4409 smd 1A marking LA SMD smd marking 1a
    Text: Transistors SMD Type Power Switching Applications 2SA1681 Features Low Saturation Voltage: VCE sat = -0.5V(max)(IC = -1A) High Speed Switching Time: tstg = 300ns(typ.) Small Flat Package PC = 1.0 to 2.0W (mounted on a ceramic substrate) Complementary to 2SC4409


    Original     		PDF 2SA1681 300ns 2SC4409 -100mA -10mA, SMD transistor 23 smd transistor marking 1A 2SA1681 la smd marking MARKING LA 1a smd transistor 2SC4409 smd 1A marking LA SMD smd marking 1a

    MARKING SMD npn TRANSISTOR 1a

    Abstract: smd transistor marking br MARKING SMD npn TRANSISTOR 690 transistor Ic 1A datasheet NPN transistor smd 6a 9v smd transistor npn smd 2a smd transistor MARKING 2A npn SMD TRANSISTOR MARKING 2A smd transistor marking 1A
    Text: Transistors SMD Type NPN Silicon Power Switching Transistor FCX690B Features 2W power dissipation. 6A peak pulse current. Gain of 400 @IC=1Amp. Very low saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage


    Original     		PDF FCX690B 100mA 50MHz 500mA, MARKING SMD npn TRANSISTOR 1a smd transistor marking br MARKING SMD npn TRANSISTOR 690 transistor Ic 1A datasheet NPN transistor smd 6a 9v smd transistor npn smd 2a smd transistor MARKING 2A npn SMD TRANSISTOR MARKING 2A smd transistor marking 1A

    Untitled

    Abstract: No abstract text available
    Text: IC Transistors SMD Type PNP Silicon Planar Medium Power High Performance Transistor FCX591 SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 • Features 1.80±0.1 2.50±0.1 4.00±0.1 ● Power Collector dissipation: PC=1W ● Continuous Collector Current: IC=-1A 0.53±0.1


    Original     		PDF FCX591 OT-89 -100mA -500mA -50mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification FCX690B Features 2W power dissipation. 6A peak pulse current. Gain of 400 @IC=1Amp. Very low saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 45 V Collector-emitter voltage


    Original     		PDF FCX690B 100mA 50MHz 500mA,

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification FCX591 SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 • Features 1.80±0.1 2.50±0.1 4.00±0.1 ● Power Collector dissipation: PC=1W ● Continuous Collector Current: IC=-1A 0.53±0.1 3.00±0.1 0.80±0.1 3 0.44±0.1 2.60±0.1


    Original     		PDF FCX591 OT-89 -100mA -500mA -50mA 100MHz

    fmmt625

    Abstract: No abstract text available
    Text: ransistors SMD Type Product specification FMMT625 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 1 0.55 ● Power dissipation :PC=625mW +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector current:IC=1A 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01


    Original     		PDF FMMT625 OT-23 625mW 200mA 100MHz fmmt625

    Untitled

    Abstract: No abstract text available
    Text: ransistors SMD Type Product specification FMMT624 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 1 0.55 ● Power dissipation :PC=625mW +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector current:IC=1A 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01


    Original     		PDF FMMT624 OT-23 625mW 200mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type NPN Silicon Power Switching Transistor FMMT624 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 1 0.55 ● Power dissipation :PC=625mW +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector current:IC=1A 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1


    Original     		PDF FMMT624 OT-23 625mW 200mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type NPN Silicon Power Switching Transistor FMMT625 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 1 0.55 ● Power dissipation :PC=625mW +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector current:IC=1A 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1


    Original     		PDF FMMT625 OT-23 625mW 200mA 100MHz

    FMMT734

    Abstract: smd transistor 5k
    Text: Transistors SMD Type Power Darlington Transistor FMMT734 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Extremely low VCE sat at high current (1A) 0.55 Very high hFE at high current (5A) +0.1 1.3-0.1 +0.1 2.4-0.1 625mW Power Dissipation 0.4 3 2 +0.1


    Original     		PDF FMMT734 OT-23 625mW -10mA, -100mA, -10mA 100MHz -500mA, FMMT734 smd transistor 5k

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification FMMT734 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Extremely low VCE sat at high current (1A) 0.55 Very high hFE at high current (5A) +0.1 1.3-0.1 +0.1 2.4-0.1 625mW Power Dissipation 0.4 3 2 +0.1 0.95-0.1


    Original     		PDF FMMT734 OT-23 625mW -10mA, -100mA, -10mA 100MHz -500mA,

    SMD MARKING A16

    Abstract: No abstract text available
    Text: Transistors IC SMD Type PNP Transistors 2SB1561-Q SOT-89 • Features Unit: mm +0.1 -0.1 +0.1 -0.1 4.50 1.50 +0.1 1.80-0.1 +0.1 2.50-0.1 1 2 3 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1 +0.1 0.40-0.1 +0.1 2.60-0.1 VCE SAT =-0.15Vat IC/IB=-1A/-50mA +0.1 0.80-0.1


    Original     		PDF 2SB1561-Q OT-89 15Vat -1A/-50mA SMD MARKING A16

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SA1364 Features High Voltage VCEO = -60V High Collector Current IC = -1A High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3444 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage


    Original     		PDF 2SA1364 500mW 2SC3444 100mA -500mA -25mA

    2SA1213

    Abstract: 2SC2873 smd 1A smd ic marking PC SMD 20A 2SC287
    Text: Transistors SMD Type Power Switching Applications 2SA1213 Features Low Saturation Voltage: VCE sat = -0.5V (max) (IC = -1A) High Speed Switching Time: tstg = 1.0ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC2873


    Original     		PDF 2SA1213 2SC2873 2SA1213 2SC2873 smd 1A smd ic marking PC SMD 20A 2SC287

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SA1213 Features Low Saturation Voltage: VCE sat = -0.5V (max) (IC = -1A) High Speed Switching Time: tstg = 1.0ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC2873 Absolute Maximum Ratings Ta = 25


    Original     		PDF 2SA1213 2SC2873

    smd TRANSISTOR 1D

    Abstract: SMD TRANSISTOR MARKING 1D SMD TRANSISTOR MARKING 1F smd transistor 1g SMD TRANSISTOR MARKING 1B transistor smd 1E ts 4141 TRANSISTOR smd 1D smd transistor TRANSISTOR smd 1D smd transistor marking 1h
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846W , 847W, 848W SOT-323 Formed SMD Package NPN Marking BC846W =1D BC847AW =1E BC846AW =1A BC847BW =1F BC846BW =1B BC847CW =1G


    Original     		PDF BC846W OT-323 BC847AW BC846AW BC847BW BC846BW BC847CW BC847W BC848W smd TRANSISTOR 1D SMD TRANSISTOR MARKING 1D SMD TRANSISTOR MARKING 1F smd transistor 1g SMD TRANSISTOR MARKING 1B transistor smd 1E ts 4141 TRANSISTOR smd 1D smd transistor TRANSISTOR smd 1D smd transistor marking 1h

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Type SMD Transistors IC Product specification 2SC5212 Features Low collector saturation voltage VCE sat =0.2V typ. High fT fT=180MHz typ. Excellent linearity of dc forward current gain. High collector current ICM=1A. Small package for mounting. Absolute Maximum Ratings Ta = 25


    Original     		PDF 2SC5212 180MHz 100mA 500mA -10mA

    C3076

    Abstract: 2SC3076
    Text: Transistors SMD Type Silicon NPN Epitaxial 2SC3076 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Low Collectror Saturation Voltage:VCE sat =0.5V(Max.)(IC=1A) +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0 +0.15


    Original     		PDF 2SC3076 O-252 C3076 C3076 2SC3076

    transistor smd marking PE

    Abstract: SMD TRANSISTOR MARKING 1D transistor smd marking PE 1b
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846W , 847W, 848W SOT-323 Formed SMD Package NPN Marking BC846W =1D BC847AW =1E BC846AW =1A BC847BW =1F BC846BW =1B BC847CW =1G


    Original     		PDF BC846W OT-323 BC847AW BC846AW BC847BW BC846BW BC847CW BC847W BC848W transistor smd marking PE SMD TRANSISTOR MARKING 1D transistor smd marking PE 1b

    smd ic marking BJE

    Abstract: transistor smd marking BJE 2SB1427
    Text: Transistors SMD Type Power Transistor 2SB1427 Features Low saturation voltage, typically VCE sat =-0.5V at IC/IB =-1A/-50mA. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO


    Original     		PDF 2SB1427 -1A/-50mA. -500mA 30MHz smd ic marking BJE transistor smd marking BJE 2SB1427

    TRANSISTOR SMD 491

    Abstract: No abstract text available
    Text: Transistors IC SMD Type NPN Silicon Planar Medium Power Transistor FZT491 SOT-223 • Features Unit: mm +0.2 3.50-0.2 +0.2 6.50-0.2 ● Continuous Collector Current: IC=1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 ● Power Dissipation: PC=2W +0.2 0.90-0.2 +0.1


    Original     		PDF FZT491 OT-223 500mA; 100mA TRANSISTOR SMD 491

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification FZT489 SOT-223 • Features Unit: mm +0.2 3.50-0.2 +0.2 6.50-0.2 ● Continuous Collector Current: IC=1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 ● Power Dissipation: PC=2W +0.2 0.90-0.2 +0.1 3.00-0.1 +0.3 7.00-0.3


    Original     		PDF FZT489 OT-223 100mA 200mA