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    SMD DIODE MARKING DD Search Results

    SMD DIODE MARKING DD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    SMD DIODE MARKING DD Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: bbS3R31 DDS7QSS T4b * A P X b'lE » N AMER PHILIPS/DISCRETE Philips Semiconductors Preliminary specification 1PS184 High speed double diode FEATURES QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode • General application. CONDITIONS


    OCR Scan     		bbS3R31 1PS184 PDF

    Untitled

    Abstract: No abstract text available
    Text: fc.bSB'm DDEMBD? bfifi • APX Philips Semiconductors Product specification N AHER PHILIPS/DISCRETE b7E D Schottky barrier diodes BAS70-07 QUICK REFERENCE DATA FEATURES • Low leakage current SYMBOL • Low turn-on and high breakdown voltage Vr continuous reverse voltage


    OCR Scan     		BAS70-07 BAS70-70 PDF

    1ff TRANSISTOR SMD MARKING CODE

    Abstract: smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p
    Text: CENTRAL SENICONDUCTOR 50E D • DDDQS11 3Gb ■ CEN SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW T Y P E NO. DESCRIPTION BVCBq (VOLTS) MW BV qeo (VOLTS) MIN BVebq (VOLTS) MIN Icbo 1^ V M (nA) (VOLTS) MAX MIN CMPT918 CMPT2222A CMPT2369


    OCR Scan     		DDDQS11 OT-23 350mW CMPT918 CMPT2222A CMPT2369 CMPT2484 CMPT2907A CMPT3640 CMPT3904 1ff TRANSISTOR SMD MARKING CODE smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p PDF

    SMD mosfet MARKING code TJ

    Abstract: MOSFET SMD MARKING CODE SMD package code MU POWER MOSFET P1 smd marking code DM520 smd marking QT
    Text: Formosa MS SMD MOSFET FMBSS84 List List. 1 Package outline. 2 Features. 2


    Original     		FMBSS84 MIL-STD-750D METHOD-1051 125OC 1000hrs. METHOD-1038 175OC METHOD-1031 SMD mosfet MARKING code TJ MOSFET SMD MARKING CODE SMD package code MU POWER MOSFET P1 smd marking code DM520 smd marking QT PDF

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS SMD MOSFET FMBSS84 List List. 1 Package outline. 2 Features. 2


    Original     		FMBSS84 120sec 260sec 30sec DS-231142 PDF

    JESD22-A108C

    Abstract: 2N7002K
    Text: Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002K List List. 1 Package outline. 2


    Original     		2N7002K 1000hours JESD22-A108-C JESD22-B102-D 168hours JESD22-A102-C JESD22-A104-B 10min /10min JESD22-A108C 2N7002K PDF

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS ESD N-Channel SMD MOSFET 2N7002K List List. 1 Package outline. 2 Features. 2


    Original     		2N7002K METHOD-1027 500hrs. MIL-STD-750D METHOD-1051 METHOD-1056 1000hrs. METHOD-1038 PDF

    Untitled

    Abstract: No abstract text available
    Text: BB172 VHF variable capacitance diode Rev. 2 — 3 December 2013 Product data sheet 1. Product profile 1.1 General description The BB172 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD323 SC-76 very small SMD plastic package.


    Original     		BB172 BB172 OD323 SC-76) PDF

    SOT-323

    Abstract: JESD22-A108-C JESD22-A108C Marking Code 72
    Text: Formosa MS SMD MOSFET 2N7002W List List. 1 Package outline. 2 Features. 2


    Original     		2N7002W JESD22-A108-C 1000hours JESD22-B102-D 168hours JESD22-A102-C 10min 10min JESD22-A104-B SOT-323 JESD22-A108-C JESD22-A108C Marking Code 72 PDF

    2N7002H

    Abstract: No abstract text available
    Text: Formosa MS N-Channel SMD MOSFET 2N7002 List List. 1 Package outline. 2 Features. 2


    Original     		2N7002 1000hours JESD22-A108-C JESD22-B102-D 168hours JESD22-A102-C JESD22-A104-B 10min /10min 2N7002H PDF

    2N7002H

    Abstract: 2N7002-H RG 702 Diode smd diode 2n7002 marking code 2N7002 MARKING DIODE smd marking 702 JESD22-A108C JESD22-A108-C POWER MOSFET P1 smd marking code 2N7002 SMD marking
    Text: Formosa MS N-Channel SMD MOSFET 2N7002 List List. 1 Package outline. 2 Features. 2


    Original     		2N7002 JESD22-A108-C 1000hours JESD22-B102-D 168hours JESD22-A102-C 10min 10min JESD22-A104-B 2N7002H 2N7002-H RG 702 Diode smd diode 2n7002 marking code 2N7002 MARKING DIODE smd marking 702 JESD22-A108C JESD22-A108-C POWER MOSFET P1 smd marking code 2N7002 SMD marking PDF

    4P04L04

    Abstract: IPP80P04P4L-04 4P04 IPI80P04P4L-04
    Text: IPB80P04P4L-04 IPI80P04P4L-04, IPP80P04P4L-04 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 4.4 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		IPB80P04P4L-04 IPI80P04P4L-04, IPP80P04P4L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI80P04P4L-04 4P04L04 IPP80P04P4L-04 4P04 PDF

    SOT-323

    Abstract: No abstract text available
    Text: Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002KW List List. 1 Package outline. 2


    Original     		2N7002KW 120sec 260sec 30sec DS-251127 SOT-323 PDF

    SMD MARKING QG 6 PIN

    Abstract: smd diode 2n7002 marking code 2n7002 marking code RK RK sot-323 smd sot 323 diode code 14 2N7002KW
    Text: Formosa MS SMD MOSFET 2N7002KW List List. 1 Package outline. 2 Features. 2


    Original     		2N7002KW 120sec 260sec 30sec DS-251127 SMD MARKING QG 6 PIN smd diode 2n7002 marking code 2n7002 marking code RK RK sot-323 smd sot 323 diode code 14 2N7002KW PDF

    4P04L08

    Abstract: IPP70P04P4L-08 IPP80P04P4L-08 smd diode UM 08
    Text: IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 7.9 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB70P04P4L-08 IPI70P04P4L-08 IPP70P04P4L-08 4P04L08 IPP70P04P4L-08 IPP80P04P4L-08 smd diode UM 08 PDF

    110N06L

    Abstract: g3pf DIODE smd marking Ag PG-TO220-3 PG-TO263-3-2 MARKING G3 INFINEON SMD diode D94
    Text: IPB110N06L G OptiMOS Power-Transistor IPP110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 11 mΩ 78 A • 175 °C operating temperature


    Original     		IPB110N06L IPP110N06L PG-TO263-3-2 P-TO263-3-2 PG-TO220-3-1 110N06L 110N06L g3pf DIODE smd marking Ag PG-TO220-3 PG-TO263-3-2 MARKING G3 INFINEON SMD diode D94 PDF

    IEC61249-2-21

    Abstract: IPB085N06L PG-TO220-3 085N06L IPP085N06L
    Text: IPB085N06L G OptiMOS Power-Transistor IPP085N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 8.2 mΩ 80 A • 175 °C operating temperature


    Original     		IPB085N06L IPP085N06L IEC61249-2-21 P-TO263-3-2 P-TO220-3-1 085N06L IEC61249-2-21 PG-TO220-3 085N06L PDF

    IEC61249-2-21

    Abstract: PG-TO220-3 070N06L
    Text: IPB070N06L G IPP070N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature


    Original     		IPB070N06L IPP070N06L IEC61249-2-21 PG-TO263-3 PG-TO220-3 070N06L IEC61249-2-21 PG-TO220-3 070N06L PDF

    070N06L

    Abstract: PG-TO-220-3 PG-TO220-3 g2ns 070N0 D53A
    Text: IPB070N06L G IPP070N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - logic level SMD version ID 60 V 6.7 m: 80 A • 175 °C operating temperature


    Original     		IPB070N06L IPP070N06L PG-TO263-3 PG-TO220-3 070N06L 070N06L PG-TO-220-3 PG-TO220-3 g2ns 070N0 D53A PDF

    marking D78

    Abstract: smd diode marking 78A
    Text: IPB110N06L G OptiMOS Power-Transistor IPP110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 11 mΩ 78 A • 175 °C operating temperature


    Original     		IPB110N06L IPP110N06L PG-TO263-3-2 P-TO263-3-2 110N06L P-TO220-3-1 marking D78 smd diode marking 78A PDF

    marking D53

    Abstract: No abstract text available
    Text: IPB085N06L G OptiMOS Power-Transistor IPP085N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 8.5 mΩ 80 A • 175 °C operating temperature


    Original     		IPB085N06L IPP085N06L P-TO263-3-2 085N06L P-TO220-3-1 marking D53 PDF

    3P03L04

    Abstract: ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 IPP80P03P3L-04 package to220 DIODE smd marking code UM 31
    Text: Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS -P Power-Transistor Product Summary Feature -30 VDS • P-Channel RDS on max. SMD version • Enhancement mode • Automotive AEC Q101 qualified 4 ID • Logic Level P- TO262 -3-1 V


    Original     		IPI80P03P3L-04 IPP80P03P3L-04 IPB80P03P3L-04 IPP80P03P3L-04 3P03L04 BIPP80P03P3L-04, 3P03L04 ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 package to220 DIODE smd marking code UM 31 PDF

    4P0409

    Abstract: IPB70P04P4-09 IPP70P04P4-09 smd diode UM 09 d70a D4104 gd 09 PG-TO263-3
    Text: IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4-09 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 9.1 mW ID -70 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4-09 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI70P04P4-09 4P0409 IPP70P04P4-09 smd diode UM 09 d70a D4104 gd 09 PG-TO263-3 PDF

    070N06L

    Abstract: DIODE smd marking Ag PG-TO220-3 070N0
    Text: IPB070N06L G IPP070N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 7 mΩ 80 A • 175 °C operating temperature


    Original     		IPB070N06L IPP070N06L PG-TO263-3 PG-TO220-3 070N06L 070N06L DIODE smd marking Ag PG-TO220-3 070N0 PDF