Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SMD DIODE 106A Search Results

    SMD DIODE 106A Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    SMD DIODE 106A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4N0605

    Abstract: smd diode 106a 107 10V smd IPB80N06S4-05 IPI80N06S4-05 IPP80N06S4-05 PG-TO263-3-2 smd 106a smd diode marking DD 4N06
    Text: IPB80N06S4-05 IPI80N06S4-05, IPP80N06S4-05 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 5.4 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80N06S4-05 IPI80N06S4-05, IPP80N06S4-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0605 IPI80N06S4-05 4N0605 smd diode 106a 107 10V smd IPB80N06S4-05 IPI80N06S4-05 IPP80N06S4-05 PG-TO263-3-2 smd 106a smd diode marking DD 4N06

    pn0307

    Abstract: DS102
    Text: SPD50N03S2-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 7.3 mΩ ID 50 A • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance P-TO252-3-11 • 175°C operating temperature


    Original     		PDF SPD50N03S2-07 P-TO252-3-11 SPD50N03S2-07 P-TO252-3-11 Q67040-S4430 PN0307 pn0307 DS102

    pn0307

    Abstract: smd diode 106a TO252 rthjc TO252 thermal character ANPS071E SPD50N03S2-07
    Text: SPD50N03S2-07 G OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 7.3 mΩ ID 50 A • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance PG-TO252-3 • 175°C operating temperature


    Original     		PDF SPD50N03S2-07 PG-TO252-3 PN0307 SPD50N03S2-07 pn0307 smd diode 106a TO252 rthjc TO252 thermal character ANPS071E

    Untitled

    Abstract: No abstract text available
    Text: SPD50N03S2-07 G OptiMOSPower-Transistor  N-Channel Product Summary VDS 30 V  Enhancement mode RDS on 7.3 m ID 50 A Feature  Excellent Gate Charge x RDS(on) product (FOM) Ph-TO252-3 Superior thermal resistance 175°C operating temperature  Avalanche rated


    Original     		PDF SPD50N03S2-07 Ph-TO252-3 SPD50N03S2-07à PN0307 SPD50N03S2-07 QS-0Z-2008 PG-TO252-3

    pn0307

    Abstract: No abstract text available
    Text: SPD50N03S2-07 G OptiMOS&!Power-Transistor Product Summary VDS 30 V Feature % N-Channel % Enhancement mode % Excellent Gate Charge x RDS on product (FOM) RDS(on) 7.3 m" ID 50 A Ph-TO252-3 %!Superior thermal resistance %!175°C operating temperature % Avalanche rated


    Original     		PDF SPD50N03S2-07 Ph-TO252-3 PN0307 QS-0Z-2008 SPD50N03S2-07 pn0307

    Untitled

    Abstract: No abstract text available
    Text: IPD50N03S2-07 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 30 V R DS on ,max 7.3 mΩ ID 50 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11 • Green package (lead free)


    Original     		PDF IPD50N03S2-07 PG-TO252-3-11 PN0307

    pn0307

    Abstract: ANPS071E IPD50N03S2-07 PG-TO252-3-11
    Text: IPD50N03S2-07 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 30 V R DS on ,max 7.3 mΩ ID 50 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11 • Green package (lead free)


    Original     		PDF IPD50N03S2-07 PG-TO252-3-11 PN0307 pn0307 ANPS071E IPD50N03S2-07 PG-TO252-3-11

    pn0307

    Abstract: ANPS071E BSPD50N03S2-07 SPD50N03S2-07
    Text: SPD50N03S2-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 7.3 mΩ ID 50 A • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance P- TO252 -3-11 • 175°C operating temperature


    Original     		PDF SPD50N03S2-07 Q67040-S4430 PN0307 BSPD50N03S2-07, SPD50N03S2-07 pn0307 ANPS071E BSPD50N03S2-07

    marking code INFINEON TO252

    Abstract: No abstract text available
    Text: SPD50N03S2-07 OptiMOS Buck converter series Product Summary Feature •N-Channel VDS 30 V •Enhancement mode RDS on 7.3 mΩ •Excellent Gate Charge x RDS(on) product (FOM) ID 50 A P- TO252 -3-11 •Superior thermal resistance •175°C operating temperature


    Original     		PDF SPD50N03S2-07 SPD50N03S2-07 Q67040-S4430 PN0307 50Aonly BSPD50N03S2-07, marking code INFINEON TO252

    PN0307

    Abstract: INFINEON PART MARKING smd diode 106a INFINEON PART MARKING to252 ANPS071E BSPD50N03S2-07 PG-TO252-3-11 SPD50N03S2-07
    Text: SPD50N03S2-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 7.3 mΩ ID 50 A • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance PG-TO252-3-11 • 175°C operating temperature


    Original     		PDF SPD50N03S2-07 PG-TO252-3-11 SPD50N03S2-07 PG-TO252-3-11 Q67040-S4430 PN0307 BSPD50N03S2-07, PN0307 INFINEON PART MARKING smd diode 106a INFINEON PART MARKING to252 ANPS071E BSPD50N03S2-07

    Untitled

    Abstract: No abstract text available
    Text: IPD05N03LA Preliminary data OptiMOSâ 2 Power-Transistor Product Summary Feature Ideal for high-frequency dc/dc converters  n-Channel  Logic Level  Excellent Gate Charge x RDS on product (FOM)  Low On-Resistance RDS(on) VDS 25 V RDS(on) 5.1 m ID 50


    Original     		PDF IPD05N03LA Q67042-S4144 05N03LA

    relay finder 45.61

    Abstract: reed 3500 2301 151 MT2C93419 reed 3500 2301 tyco igbt module 25A 1200V 5V SPST DIL Reed Relay Transistor tag 9013 Triac TAG 9013 3258 smd led varistor BS415
    Text: 2295 Technical portal and online community for Design Engineers - www.element-14.com Relays & Solenoids Page 2343 2336 2310 2347 2298 2320 2346 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 Safety10 A331-1-C2A7M A331-1-C2-A73 24Vdc 110Vac 240Vac A331-1-C2-A7D relay finder 45.61 reed 3500 2301 151 MT2C93419 reed 3500 2301 tyco igbt module 25A 1200V 5V SPST DIL Reed Relay Transistor tag 9013 Triac TAG 9013 3258 smd led varistor BS415

    Untitled

    Abstract: No abstract text available
    Text: 05392 P0402V Series Only One Name Means ProTek’Tion ULTRA LOW CAPACITANCE ESD PROTECTION COMPONENT DESCRIPTION The P0402V Series is an ultra low capacitance ESD component designed to protect very high-speed data interfaces. These devices have a typical capactiance of only


    Original     		PDF P0402V IEC61000-4-2.

    Untitled

    Abstract: No abstract text available
    Text: 05442 P0603V24 Only One Name Means ProTek’Tion ULTRA LOW CAPACITANCE ESD PROTECTION COMPONENT DESCRIPTION The P0603V24 is an ultra low capacitance ESD component designed to protect very high-speed data interfaces. The device has a typical capactiance of only 0.05pF


    Original     		PDF P0603V24 P0603V24 IEC61000-4-2.

    p0603v24

    Abstract: No abstract text available
    Text: 05442 P0603V24 Only One Name Means ProTek’Tion ULTRA LOW CAPACITANCE ESD PROTECTION COMPONENT DESCRIPTION The P0603V24 is an ultra low capacitance ESD component designed to protect very high-speed data interfaces. The device has a typical capactiance of only 0.05pF


    Original     		PDF P0603V24 P0603V24 IEC61000-4-2.

    schematic diagram 230VAC to 24VDC POWER SUPPLY

    Abstract: 48V 30A SPDT RELAY IM03D PCH-124 N mosfet 250v 600A VARISTOR 275 L20 PA66 - GF 25 relay marking code W16 SMD Transistor 90W 19.5V Power Adapter pcb G6CU-2117P
    Text: farnell.com element14.com 2501 Relays & Solenoids Page 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . . High Frequency Relays . . . . . . . . . . . . . . . . . . . . . Interface Relays . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element14 schematic diagram 230VAC to 24VDC POWER SUPPLY 48V 30A SPDT RELAY IM03D PCH-124 N mosfet 250v 600A VARISTOR 275 L20 PA66 - GF 25 relay marking code W16 SMD Transistor 90W 19.5V Power Adapter pcb G6CU-2117P

    FP5512

    Abstract: autofocus IC WLCSP chip mount 0.4mm pitch flip chip 256 pin 0X18H autofocus lens control system in camera diode SD4
    Text: FP5512 fitipower integrated technology lnc. 85T I2C Compatible 10-Bit DAC 120mA VCM Driver with Slope Control Description Features The FP5512 is a single 10-bit DAC with 120mA output current voice coil motor VCM driver, with an 2 I C-compatible serial interface that operates at clock


    Original     		PDF FP5512 10-Bit 120mA FP5512 FP5512-0 autofocus IC WLCSP chip mount 0.4mm pitch flip chip 256 pin 0X18H autofocus lens control system in camera diode SD4

    TPA2020

    Abstract: ISS355 fairchild diode aa14 diode BUG C332 max1987 FBM-11-160808-301A20T D46 diode Maxim MAX1987 r5c551 fairchild aa11
    Text: 5 3 2 1 First International Computer,Inc Protable Computer Group HW Department D C 4 Board name : Mother Board Schematic 1. Schematic Page Description : Project : MB02 2. PCI & IRQ & DMA Description : D 3. Block Diagram : Version : 0.4A C 4. Net name Description :


    Original     		PDF September/20 NO266 1/16W 1000pF HCB2012K-601T20 TPA2020 ISS355 fairchild diode aa14 diode BUG C332 max1987 FBM-11-160808-301A20T D46 diode Maxim MAX1987 r5c551 fairchild aa11

    M68HC11EVBU

    Abstract: smd diode S6 6D CRT Monitor repair schematic ASM-0100 itt cannon d subminiature 1n4148 ITT 12J8 ECHO schematic diagrams MC68HC11E9FN1 RESISTOR-10M OHM
    Text: M68HC11EVBU/D REV 3 April 1997 M68HC11EVBU UNIVERSAL EVALUATION BOARD USER’S MANUAL Information contained in this document applies to REVision B M68HC11EVBU Universal Evaluation Boards. MOTOROLA Inc. 1990, 1997; All Rights Reserved Motorola reserves the right to make changes without further notice to any products herein to


    Original     		PDF M68HC11EVBU/D M68HC11EVBU M68HC11EVBU smd diode S6 6D CRT Monitor repair schematic ASM-0100 itt cannon d subminiature 1n4148 ITT 12J8 ECHO schematic diagrams MC68HC11E9FN1 RESISTOR-10M OHM

    M68HC11EVBU

    Abstract: m68hc11e9 MC68HC11E9FN1 Aptronics CRT Monitor repair schematic EFO-GC8004A4 Buffalo monitor crt 08 3m M68HC11EVB schematic diagram lcd monitor advance 17
    Text: Freescale Semiconductor, Inc. M68HC11EVBU/D REV 3 Freescale Semiconductor, Inc. April 1997 M68HC11EVBU UNIVERSAL EVALUATION BOARD USER’S MANUAL Information contained in this document applies to REVision B M68HC11EVBU Universal Evaluation Boards. MOTOROLA Inc. 1990, 1997; All Rights Reserved


    Original     		PDF M68HC11EVBU/D M68HC11EVBU M68HC11EVBU m68hc11e9 MC68HC11E9FN1 Aptronics CRT Monitor repair schematic EFO-GC8004A4 Buffalo monitor crt 08 3m M68HC11EVB schematic diagram lcd monitor advance 17

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    smd diode 106a

    Abstract: smd 106a SOD106A diode t37 BYG90-90 philips Schottky diode very high current schottky diode diode package outline schottky barrier rectifier diode 15 A schottky barrier
    Text: Philips Semiconductors Product specification Schottky barrier rectifier diode BYG90-90 FEATURES DESCRIPTION • Low switching losses The BYG 90-90 is a Schottky barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular SOD106A plastic SMD


    OCR Scan     		PDF BYG90-90 BYG90-90 OD106A 7110fl2b 711002b D1G3223 smd diode 106a smd 106a SOD106A diode t37 philips Schottky diode very high current schottky diode diode package outline schottky barrier rectifier diode 15 A schottky barrier

    smd diode 106a

    Abstract: DIODE MARKING B85 smd diode byg SOD106A smd 106a byg 100 diode smd diode 1S BYG90-90 B85 diode smd diode byg 20
    Text: Philips Semiconductors Product specification Schottky barrier rectifier diode BYG90-90 FEATURES DESCRIPTION • Low switching losses The BYG 90-90 is a Schottky barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular SOD106A plastic SMD


    OCR Scan     		PDF BYG90-90 BYG90-90 OD106A b-100 7110fl2b 711002b 01032B3 smd diode 106a DIODE MARKING B85 smd diode byg SOD106A smd 106a byg 100 diode smd diode 1S B85 diode smd diode byg 20

    smd diode 106a

    Abstract: smd 106a BYG90-90
    Text: DISCRETE SEMICONDUCTORS GMTâ SlnlEET BYG90-90 Schottky barrier rectifier diode 1996 May 13 Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC01 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification


    OCR Scan     		PDF BYG90-90 smd diode 106a smd 106a BYG90-90