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    4N0605

    Abstract: IPD90N06S4-05 PG-TO252-3-11 IPD90N04S6-05
    Text: IPD90N06S4-05 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 5.1 mΩ ID 90 A Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		PDF IPD90N06S4-05 PG-TO252-3-11 IPD90N04S6-05 4N0605 4N0605 IPD90N06S4-05 PG-TO252-3-11 IPD90N04S6-05

    4N0605

    Abstract: smd diode 106a 107 10V smd IPB80N06S4-05 IPI80N06S4-05 IPP80N06S4-05 PG-TO263-3-2 smd 106a smd diode marking DD 4N06
    Text: IPB80N06S4-05 IPI80N06S4-05, IPP80N06S4-05 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 5.4 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80N06S4-05 IPI80N06S4-05, IPP80N06S4-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0605 IPI80N06S4-05 4N0605 smd diode 106a 107 10V smd IPB80N06S4-05 IPI80N06S4-05 IPP80N06S4-05 PG-TO263-3-2 smd 106a smd diode marking DD 4N06