SMD15N05
Abstract: SMU15N05
Text: SMD/SMU15N05 Siliconix NĆChannel EnhancementĆMode Transistors 175_C Maximum Junction Temperature Product Summary V BR DSS (V) rDS(on) (W) IDa (A) 50 0.10 15 TOĆ251 D TOĆ252 G Drain connected to Tab G D S Top View Order Number: G SMD15N05 D S S Top View
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SMD/SMU15N05
SMD15N05
SMU15N05
P36850Rev.
SMD15N05
SMU15N05
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PDF
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beta 3435
Abstract: QT06015-054 3773 SMD 142012 76118 202F NTC Thermistor 301
Text: .019 .002 .039 .002 ELECTRICAL CHARACTERISTICS: R25C=10,000 OHMS 1% BETA=3435 OPERATING TEMPERATURE: -40C TO 125C DISSIPATION CONSTANT: 2.5 mW/C MIN POWER RATING: 250mW AT 25C .019 .002 NOTES: SMD 0402 PACKAGE DRAWN INITIAL DATE BR 11/24/2009 2108 CENTURY WAY
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Original
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250mW
beta 3435
QT06015-054
3773 SMD
142012
76118
202F
NTC Thermistor 301
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PDF
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49319
Abstract: 62277 175656 QT06015-055 smd 4468
Text: .031 .004 .063 .004 ELECTRICAL CHARACTERISTICS: R25C=10,000 OHMS 1% BETA=4100 OPERATING TEMPERATURE: -40C TO 125C DISSIPATION CONSTANT: 3.5 mW/C MIN POWER RATING: 350mW AT 25C .037 .004 NOTES: SMD 0603 PACKAGE DRAWN INITIAL DATE BR 11/24/2009 2108 CENTURY WAY
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Original
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350mW
49319
62277
175656
QT06015-055
smd 4468
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PDF
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GSIB-5S
Abstract: E54214 EDF1yM EDF1yS TO-269AA GBPC12-35W MBXM g2sb
Text: Bridge Rectifiers Vishay Semiconductors IF AV (A) 0.5 0.9 1.0 1.5 2.0 3.0 4.0 TYPE V(BR) RANGE (V) PACKAGE DEVICE(1) (7) SOURCE (3) FAMILY MAX VF(5) @ IF (V) (A) MBxM G Mini-bridge MBM 200 - 600 1.0 0.4 MBxS G Mini-bridge (SMD) MBS (TO-269AA) 200 - 600 1.0
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Original
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O-269AA)
BxxC800G
BxxC1000G
GSIB25xx
GBPC35xxW
GBPC12-35W
E54214
04-Nov-02
GSIB-5S
E54214
EDF1yM
EDF1yS
TO-269AA
GBPC12-35W
MBXM
g2sb
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PDF
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SMD15N05
Abstract: SMU15n05
Text: SMD/SMU15N05 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) IDa (A) 50 0.10 15 TO-251 D TO-252 G Drain connected to Tab G D S Top View S Order Number: G SMD15N05 D S N-Channel MOSFET Top View Order Number: SMU15N05 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
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Original
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SMD/SMU15N05
O-251
O-252
SMD15N05
SMU15N05
P-36850--Rev.
06-Jun-94
SMD15N05
SMU15n05
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PDF
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SMU15N05
Abstract: SMD15N05
Text: SMD/SMU15N05 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) IDa (A) 50 0.10 15 TO-251 D TO-252 G Drain connected to Tab G D S Top View S Order Number: G SMD15N05 D S N-Channel MOSFET Top View Order Number: SMU15N05 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
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Original
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SMD/SMU15N05
O-251
O-252
SMD15N05
SMU15N05
P-36850--Rev.
06-Jun-94
SMU15N05
SMD15N05
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PDF
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smd code YL 69
Abstract: 34 marking code zd smd WY SMD tr zy 406 YM 294 SMD MARKING CODE 833 yd 803 rohs wy smd transistor marking code YS SMD smd diode code WP
Text: SMD Transient Voltage Suppressor SMD Diodes Specialist TV04A5V0-G Thru. TV04A171-G Working Peak Reverse Voltage: 5.0 to 170 Volts Power Dissipation: 400 Watts RoHS Device Features DO-214AC SMA -Ideal for surface mount applications. -Easy pick and place.
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Original
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TV04A5V0-G
TV04A171-G
DO-214AC
DO-214AC,
TV04A151J
TV04A161K
TV04A161J
TV04A171K
TV04A171J
QW-BTV01
smd code YL 69
34 marking code zd smd
WY SMD tr
zy 406
YM 294
SMD MARKING CODE 833
yd 803 rohs
wy smd transistor
marking code YS SMD
smd diode code WP
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PDF
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4n0609
Abstract: F45A IPB45N06S4-09 IPI45N06S4-09 IPP45N06S4-09 PG-TO263-3-2 4N06
Text: IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 9.2 mΩ ID 45 A Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature
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IPB45N06S4-09
IPI45N06S4-09,
IPP45N06S4-09
PG-TO263-3-2
4N0609
IPI45N06S4-09
PG-TO262-3-1
4n0609
F45A
IPB45N06S4-09
IPI45N06S4-09
IPP45N06S4-09
PG-TO263-3-2
4N06
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PDF
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4N03L03
Abstract: 4n03l02 IPB80N03S4L-02 4n03L
Text: IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max 2.4 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow • 175°C operating temperature
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IPB80N03S4L-02
IPI80N03S4L-03,
IPP80N03S4L-03
PG-TO262-3-1
PG-TO263-3-2
PG-TO220-3-1
IPI80N03S4L-03
PG-TO263-3-2
4N03L03
4n03l02
4n03L
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PDF
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4N03L02
Abstract: No abstract text available
Text: IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max 2.4 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow • 175°C operating temperature
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Original
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IPB80N03S4L-02
IPI80N03S4L-03,
IPP80N03S4L-03
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
4N03L02
IPI80N03S4L-03
4N03L02
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PDF
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Untitled
Abstract: No abstract text available
Text: COMCHIP SMD Transient Voltage Suppressor SMD Diodes Specialist TV30C5V0-G Thru. TV30C171-G Working Peak Reverse Voltage: 5.0 to 170 Volts Power Dissipation: 3000 Watts RoHS Device Features DO-214AB SMC -Ideally for surface mount applications. -Easy pick and place.
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Original
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TV30C5V0-G
TV30C171-G
DO-214AB
TV30C151J
TV30C161K
TV30C161J
TV30C171K
TV30C171J
QW-BTV04
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification FCX1051A Features 2W power dissipation. 10A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 17mv Typ. Extremely low equivalent on-resistance. RCE sat 57mÙ at 3A.
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FCX1051A
100MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: Final Data Sheet OptiMOS -P2 Power-Transistor IPB180P04P4-03 Product Summary V DS -40 V R DS on 2.8 mW ID -180 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature
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Original
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IPB180P04P4-03
PG-TO263-7-3
4QP0403
-10V2)
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PDF
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npn smd 3a
Abstract: power transistor Ic 4A datasheet NPN smd FZT1048A 5a SMD Transistor
Text: Transistors SMD Type NPN Silicon Planar Medium Power High Gain Transistor FZT1048A SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 VCEO = 17.5V. 5 Amp continuous current. +0.1 3.00-0.1 +0.15 1.65-0.15 Features Unit: mm +0.2 0.90-0.2 +0.3 7.00-0.3
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Original
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FZT1048A
OT-223
50MHz
npn smd 3a
power transistor Ic 4A datasheet NPN smd
FZT1048A
5a SMD Transistor
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PDF
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IPB180P04
Abstract: ipb180p D180A IPB180P04P4-03 SMD MARKING QG 6 PIN 73 marking ipb180p04p4
Text: Final Data Sheet OptiMOS -P2 Power-Transistor IPB180P04P4-03 Product Summary V DS -40 V R DS on 2.8 mW ID -180 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature
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Original
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IPB180P04P4-03
PG-TO263-7-3
4QP0403
-10V2)
IPB180P04
ipb180p
D180A
IPB180P04P4-03
SMD MARKING QG 6 PIN
73 marking
ipb180p04p4
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PDF
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4N06H1
Abstract: IPB180N06S4-H1 D180A PG-TO263-7-3 TO263-7 4N06 SMD Diode
Text: IPB180N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 1.7 mΩ ID 180 A Features PG-TO263-7-3 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)
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Original
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IPB180N06S4-H1
PG-TO263-7-3
4N06H1
4N06H1
IPB180N06S4-H1
D180A
PG-TO263-7-3
TO263-7
4N06
SMD Diode
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PDF
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Untitled
Abstract: No abstract text available
Text: SMD Type Product specification FZT1048A SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 VCEO = 17.5V. 5 Amp continuous current. +0.1 3.00-0.1 +0.15 1.65-0.15 Features Unit: mm +0.2 0.90-0.2 +0.3 7.00-0.3 20 Amp pulse current. 4 Low saturation voltage.
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Original
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FZT1048A
OT-223
50MHz
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PDF
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IPP17N25S3-100
Abstract: No abstract text available
Text: IPB17N25S3-100 IPP17N25S3-100 OptiMOS -T Power-Transistor Product Summary VDS 250 V RDS on ,max 100 mW ID 17 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature
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Original
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IPB17N25S3-100
IPP17N25S3-100
PG-TO263-3-2
PG-TO220-3-1
3N25100
IPP17N25S3-100
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PDF
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2n08l07
Abstract: 2N08L07 POWER IPP80N08S2L-07 2n08l07 marking IPB80N08S2L-07 2n08l "2N08L07" 2n08 ANPS071E PG-TO263-3-2
Text: IPB80N08S2L-07 IPP80N08S2L-07 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 75 V R DS on ,max (SMD version) 6.8 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature
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Original
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IPB80N08S2L-07
IPP80N08S2L-07
PG-TO263-3-2
PG-TO220-3-1
SP0002-19051
2N08L07
2n08l07
2N08L07 POWER
IPP80N08S2L-07
2n08l07 marking
IPB80N08S2L-07
2n08l
"2N08L07"
2n08
ANPS071E
PG-TO263-3-2
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PDF
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PN04L03
Abstract: smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42
Text: IPB100N04S2L-03 IPP100N04S2L-03 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.0 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature
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Original
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IPB100N04S2L-03
IPP100N04S2L-03
PG-TO263-3-2
PG-TO220-3-1
SP0002-19065
PN04L03
PN04L03
smd diode code gs
Application Note ANPS071E
ANPS071E
marking CODE R SMD DIODE
smd diode marking 77
SMD MARKING CODE
SMD MARKING CODE 102
smd TR marking code G11
TRANSISTOR SMD MARKING CODE 42
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PDF
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PN08L07
Abstract: Diode smd 86 OPTIMOS SMD MARKING CODE PN08L07 S Application Note ANPS071E marking CODE R SMD DIODE SMD MARKING CODE 102 TRANSISTOR SMD MARKING CODE ag IPB100N08S2L-07
Text: IPB100N08S2L-07 IPP100N08S2L-07 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 75 V R DS on ,max (SMD version) 6.5 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature
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Original
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IPB100N08S2L-07
IPP100N08S2L-07
PG-TO263-3-2
PG-TO220-3-1
SP0002-19053
PN08L07
PN08L07
Diode smd 86
OPTIMOS
SMD MARKING CODE
PN08L07 S
Application Note ANPS071E
marking CODE R SMD DIODE
SMD MARKING CODE 102
TRANSISTOR SMD MARKING CODE ag
IPB100N08S2L-07
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PDF
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JTs smd diode
Abstract: SMD15N05 SMU15N05 TD 33b 25A15
Text: Temic SMD/SMU15N05 Siliconix N-Channel Enhancement-Mode Transistors 175 °C Maximum Junction Temperature Product Summary tDa A 15 r DS(on) (Q ) 0.10 V (BR)DSS (V) 50 TO-251 TO-252 o in D O O rO Drain connected to Thb G D S Top View Order Number: SMD15N05
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OCR Scan
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smd/smu15n05
O-251
O-252
SMD15N05
SMU15N05
SMD15N05
SMU15N05
P-36850â
JTs smd diode
TD 33b
25A15
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PDF
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SMD15N
Abstract: No abstract text available
Text: Tem ic SMD/SMU15N05 Siliconix N-Channel Enhancement-Mode Transistors 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) r DS(on) (Q ) Id3 (A) 50 0.10 15 TO-251 TO-252 o —im o FT] G D D rain connected to Tab S Ô Top View O rder Number: G SMD15N05
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OCR Scan
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SMD/SMU15N05
O-251
O-252
SMD15N05
SMU15N05
P-36850--Rev.
06/06A
SMD15N
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PDF
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SMD15N05
Abstract: SMU15N05
Text: Tem ic SMD/SMU15N05 Semiconductors N-Channel Enhancement-Mode Transistors Product Summary V BR DSS 50 (V) IDa (A) r DS(on) ( ^ ) 0.10 15 TO-251 D O TO-252 o o TT Drain connected to Tab G D S Top View Order Number: SMD15N05 Ô s G D S Top View Order Number:
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OCR Scan
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SMD/SMU15N05
O-251
O-252
SMD15N05
SMU15N05
P-36850--Rev.
06-Jun-94
SMD15N05
SMU15N05
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PDF
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